P-CHANNEL MOSFET 25V SOP8 Search Results

Mosfet

Abstract: SSF4953
Contextual Info: SSF4953 30V Dual P-Channel MOSFET DESCRIPTION D1 The SSF4953 uses advanced trench technology to provide excellent RDS ON , low gate charge. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).

Contextual Info: TAIW AN s TSM4410 SEMICONDUCTOR 25V N-Channel MOSFET bl RoHS CO M PLIANCE SO P-8 PRODUCT SUMMARY Pin Definition: 1. S ou rce 2. S ou rce 3. S ou rce VDS V R o s ic a m o ) 25 4. Gate 5. 6, 7, 8. Drain Features Id (A) 1 5 V cs= 10V 10 21 @ V « s= 4 .5 V

MOSFET 60V 75A

Abstract: TF-680
Contextual Info: 235 STP9 STP92 P Channel Enhancement Mode MOSFET - 7.5A DESCRIPTION STP9235 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly

Contextual Info: STP6635GH P Channel Enhancement Mode MOSFET -40.0A DESCRIPTION STP6635GH is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP413D has been designed specially to improve the overall efficiency of DC/DC converters using

cmos 4000 series

Abstract: fully protected p channel mosfet high speed mosfet driver
Contextual Info: IXDD408PI IXDD408YI AD VANCE TECHNICAL INFORMA TION ADV INFORMATION Ultrafast High Current MOSFET Driver Features Description • Built using the advantages and compatability of CMOS and IXYS HDMOSTM process. • Latch Up Protected • High Peak Output Current: 8A Peak

cmos 4000 series

Abstract: IXDD414YI IXDD414PI
Contextual Info: IXDD414PI IXDD414YI AD VANCE TECHNICAL INFORMA TION ADV INFORMATION Ultrafast High Current MOSFET Driver Features Description • Built using the advantages and compatability of CMOS and IXYS HDMOSTM process. • Latch-Up Protected • High Peak Output Current: 14A Peak

IXDI404PI

Abstract: IXDN404PI IXDI404SI-16 IXDN404 IXDF404PI cl470 IXDF404
Contextual Info: IXDN404PI / N404SI / N404SI-16 IXDF404PI / F404SI / F404SI-16 IXDI404PI / I404SI / I404SI-16 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected Over Entire

lm339 igbt driver

Abstract: low power mosfet Ultrafast MOSFET Driver smps LM339 LM339 APPLICATION 404si fully protected p channel mosfet 404SI-16 IXDD404PI IXDD404
Contextual Info: IXDD404PI / 404SI / 404SI-16 4 Amp Dual Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected • High Peak Output Current: 4A Peak • Wide Operating Range: 4.5V to 25V

404SI

Abstract: 404SI-16 IXDD404 IXDD404PI IXFN100N20 2N7000 IXFD100N20 404SIA
Contextual Info: PRELIMINARY DATA SHEET IXDD404PI / 404SI / 404SIA / 404SI-16 4 Amp Dual Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected • High Peak Output Current: 4A Peak

IXDN402PI

Abstract: n402 IXDF402PI IXDI402PI IXDN402
Contextual Info: IXDN402PI / N402SI / N402SI-16 IXDF402PI / F402SI / F402SI-16 IXDI402PI / I402SI / I402SI-16 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected Over Entire

IXDF402SIA

Abstract: driving mosfet/igbt with pulse transformer driver IXDI402SIA IXDN402 IXDN402PI IXDN402SI IXDN402SI-16 IXDN402SIA
Contextual Info: IXDN402 / IXDI402 / IXDF402 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected Over Entire Operating Range • High Peak Output Current: 2A Peak

IXDF404

Abstract: IXDI404PI IXDD404PI IXDN404 IXDI404 IXDN404PI IXDN404SI IXDN404SIA SOIC-16
Contextual Info: IXDN404 / IXDI404 / IXDF404 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected Over Entire Operating Range • High Peak Output Current: 4A Peak

gs 7103

Abstract: FY4AEJ-03
Contextual Info: MITSUBISHI POWER MOSFET ARY FY4AEJ-03 MIN RELI on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som P HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET FY4AEJ-03 OUTLINE DRAWING ➄ ➀ ➃ 6.0 4.4 ➇ Dimensions in mm

FY5AEJ-03

Contextual Info: MITSUBISHI POWER MOSFET ARY FY5AEJ-03 IMIN PREL . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET FY5AEJ-03 OUTLINE DRAWING ➄ ➀ ➃ 6.0 4.4 ➇ Dimensions in mm

IXDD408PI

Abstract: IXDD408 Ultrafast MOSFET Driver 2N7000 IXDD480 VM0580-02F IC TTL 4700 cd4049a fully protected p channel mosfet 2N7000 TO220
Contextual Info: IXDD408PI / 408SI / 408YI / 408CI 8 Amp Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes. • Latch Up Protected • High Peak Output Current: 8A Peak • Operates from 4.5V to 25V

STP4407

Abstract: mosfet 407 mosfet vgs 5v
Contextual Info: 4407 STP STP4 P Channel Enhancement Mode MOSFET - 12A DESCRIPTION The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

Contextual Info: IXDD408PI / 408SI / 408YI / 408CI 8 Amp Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes. • Latch Up Protected • High Peak Output Current: 8A Peak • Operates from 4.5V to 25V

IXDD404PI

Abstract: IXDI404SI IXDI404SI-16 IXDN404 IXDF404 IXDI404 IXDN404PI IXDN404SI IXDN404SIA SOIC-16
Contextual Info: IXDN404 / IXDI404 / IXDF404 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 0.5A • High Peak Output Current: 4A Peak

FDS8884 equivalent

Abstract: FDS8884 adapter 12v 5a FDS8884 SOP8 wurth 744 adapter 12v 1a AAT2688 BAS16 Si4686DY SI4686
Contextual Info: PRODUCT DATASHEET AAT2688 SystemPowerTM 4.5A PMIC Solution for 12V Adapter Systems with 2-Output High Performance Step-Down Converters General Description Features The AAT2688 provides two independently regulated DC outputs: a high voltage synchronous step-down Buck

gs 7103

Abstract: FY4AEJ-03 Hitachi DSA00757
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: PRODUCT DATASHEET AAT2688 SystemPowerTM 4.5A PMIC Solution for 12V Adapter Systems with 2-Output High Performance Step-Down Converters General Description Features The AAT2688 provides two independently regulated DC outputs: a high voltage synchronous step-down Buck

Contextual Info: IXDN404 / IXDI404 / IXDF404 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 0.5A • High Peak Output Current: 4A Peak

IXDI404PI

Abstract: IXDF404SI IXDF404PI IXDF404 IXDI404 IXDN404 IXDN404PI IXDN404SI IXDN404SIA SOIC-16
Contextual Info: IXDN404 / IXDI404 / IXDF404 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected • High Peak Output Current: 4A Peak • Wide Operating Range: 4.5V to 35V

FY5AEJ-03

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog