P-CHANNEL MOSFET 120V Search Results

Contextual Info: FQA36P15 / FQA36P15_F109 P-Channel QFET MOSFET −150 V, -36 A, 90 mΩ Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 15N25-P Preliminary Power MOSFET 15A, 250V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 15N25-P is an N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current capacity and low gate

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N70-P Power MOSFET 6.0A, 700V N-CHANNEL POWER MOSFET 1  DESCRIPTION 1 The UTC 6N70-P is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed, low gate

FQB15P12

Abstract: FQI15P12
Contextual Info: FQB15P12 / FQI15P12 120V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: FQP15P12/FQPF15P12 120V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N70-P Power MOSFET 6.0A, 700V N-CHANNEL POWER MOSFET  1 DESCRIPTION 1 1 FEATURES TO-251 * RDS ON <1.8Ω @ VGS=10V, ID=3A * High switching speed  TO-220F2 TO-220F The UTC 6N70-P is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a

Contextual Info: FQB15P12 / FQI15P12 120V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

fqPF15P12

Abstract: keypad 4x4 FQP15P12 fqpf15
Contextual Info: FQP15P12/FQPF15P12 120V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

FQA36P15

Contextual Info: FQA36P15 150V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: FQA36P15 P-Channel QFET MOSFET −150 V, -36 A, 90 mΩ Features Description • -36 A, -150 V, RDS on = 90 mΩ (Max) @VGS = -10 V, ID = -18 A This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar • Low Gate Charge (Typ. 81 nC)

FQA36P15

Contextual Info: TM FQA36P15 150V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

MOSFET N-CH 200V

Abstract: MOSFET P-CH 250V 5A sd 150 zener diode STS1C1S250
Contextual Info: STS1C1S250 N-CHANNEL 250V - 0.9Ω - 0.75A SO-8 P-CHANNEL 250V - 2.1Ω - 0.6A SO-8 MESH OVERLAY POWER MOSFET TYPE STS1C1S250 N-Channel STS1C1S250(P-Channel) • ■ ■ ■ VDSS RDS(on) ID 250 V 250 V <1.4Ω <2.8Ω 0.80 A 0.60 A TYPICAL RDS(on) (N-Channel) = 0.9 Ω

STS1C1S250

Abstract: P-Channel MOSFET 120v dual zener diode 10v MOSFET N-CH 200V
Contextual Info: STS1C1S250 N-CHANNEL 250V - 0.9Ω - 0.75A SO-8 P-CHANNEL 250V - 2.1Ω - 0.6A SO-8 MESH OVERLAY POWER MOSFET TYPE STS1C1S250 N-Channel STS1C1S250(P-Channel) • ■ ■ ■ VDSS RDS(on) ID 250 V 250 V <1.4Ω <2.8Ω 0.80 A 0.60 A TYPICAL RDS(on) (N-Channel) = 0.9 Ω

STS1C1S250

Abstract: Zener Diode B1 9
Contextual Info: STS1C1S250 N-CHANNEL 250V - 0.9Ω - 0.75A SO-8 P-CHANNEL 250V - 2.1Ω - 0.6A SO-8 MESH OVERLAY POWER MOSFET TYPE STS1C1S250 N-Channel STS1C1S250(P-Channel) • ■ ■ ■ VDSS RDS(on) ID 250 V 250 V <1.4Ω <2.8Ω 0.80 A 0.60 A TYPICAL RDS(on) (N-Channel) = 0.9 Ω

FQA36P15_F109

Abstract: F109 FQA36P15 P-Channel MOSFET 120v
Contextual Info: QFET FQA36P15 / FQA36P15_F109 150V P-Channel MOSFET Features Description • • • • • • • These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

FQA36P15_F109

Abstract: F109 FQA36P15 P-CHANNEL MOSFET
Contextual Info: QFET FQA36P15 / FQA36P15_F109 150V P-Channel MOSFET Features Description • • • • • • • These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: AP13P15GS/P-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free BVDSS -150V RDS ON 300mΩ ID G -13A S Description

SVDF8N60F

Abstract: 8N60
Contextual Info: 8N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead Pb -Free 8 AMPERES Description: The WEITRON 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

AP13P15GP

Contextual Info: AP13P15GS/P Pb Free Plating Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic -150V RDS ON 300mΩ ID G ▼ RoHS Compliant BVDSS -13A S

Contextual Info: AP13P15GS/P-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D RDS ON Fast Switching Characteristic RoHS Compliant & Halogen-Free ID G -150V 300m -13A S Description Advanced Power MOSFETs from APEC provide the designer with the

4n60f

Abstract: 4N60P
Contextual Info: 4N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead Pb -Free 4 AMPERES DRAIN SOURCE VOLTAGE 600 VOLTAGE Description: The WEITRON 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

IRF5NJ6215

Contextual Info: PD - 94284A HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ6215 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ6215 -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing

Contextual Info: AP15P15GH-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge BVDSS D -140V RDS ON Simple Drive Requirement ID Fast Switching Characteristic RoHS Compliant & Halogen-Free 180m G -15A S Description

Contextual Info: PD - 94284A HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ6215 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ6215 -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing