P-CHANNEL MOSFET 110A Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF9520S Preliminary POWER MOSFET -6.8A, -100V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UF9520S is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT120P06 Power MOSFET 120A, 60V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT120P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also

p-channel Mosfet 110A

Abstract: UTT120P06
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT120P06 Power MOSFET 120A, 60V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT120P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also

Contextual Info: PD - 90437D POWER MOSFET THRU-HOLE MO-036AB IRFG5110 100V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG5110 IRFG5110 RDS(on) 0.7Ω 0.7Ω ID 1.0A -1.0A CHANNEL N P HEXFET® MOSFET technology is the key to International

SUM110P04-04L

Abstract: p-channel Mosfet 110A SUM110P04-04L SPICE Device Model
Contextual Info: SPICE Device Model SUM110P04-04L Vishay Siliconix P-Channel 40-V D-S 175° MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUM110P06-07L

Abstract: p-channel Mosfet 110A
Contextual Info: SPICE Device Model SUM110P06-07L Vishay Siliconix P-Channel 60-V D-S 175° MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: PD - 9.1260D International IGR Rectifier IRLML5103 HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching VDss = -30 V

IRLML5103

Abstract: sot23 footprint
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1260A IRLML5103 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching VDSS = -30V RDS(on) = 0.60Ω

IRF7416

Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1356A PRELIMINARY IRF7416 HEXFET Power MOSFET Generation V Technology l Ultra Low On-Resistance l P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description

Contextual Info: UNISONICTECHNOLOGIESCO., LTD UTT120P06 Preliminary Power MOSFET 1 2 0 A, 6 0 V P-CH AN N EL POWER M OSFET ̈ DESCRI PT I ON The UTC UTT120P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also

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Contextual Info: SUM110P08-11 New Product Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A)b Qg (Typ) –80 0.0111@ VGS = –10 V –110 113 nC D TrenchFETr Power MOSFET APPLICATIONS D Automotive such as: – High Side Switch

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Abstract: SUM110P08-11 SUM110P08-11 rev 51507
Contextual Info: SUM110P08-11 New Product Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A)b Qg (Typ) –80 0.0111@ VGS = –10 V –110 113 nC D TrenchFETr Power MOSFET APPLICATIONS D Automotive such as: – High Side Switch

SUM110P04-05

Contextual Info: SUM110P04-05 New Product Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)a Qg (Typ) –40 0.005 @ VGS = –10 V –110 185 nC APPLICATIONS RoHS D Automotive – Motor Drives – Fuel Injection

Contextual Info: SUM110P04-05 New Product Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)a Qg (Typ) –40 0.005 @ VGS = –10 V –110 185 nC APPLICATIONS RoHS D Automotive – Motor Drives – Fuel Injection

1RF9520

Abstract: diode S68a 68A diode IRF9520S UI5 321 IRF9520 ScansUX102 d68a SMD MARKING "68A"
Contextual Info: P D -9.319G International ire 1Rectifier IRF9520 HEXFET® Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements ^D S S -

IRL*5103

Abstract: p-channel Mosfet 110A IRLMS6803 IRLML5103PBF
Contextual Info: PD - 94894 IRLML5103PbF HEXFET Power MOSFET l l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free D VDSS = -30V G RDS(on) = 0.60Ω S Description

Contextual Info: PD - 96165A IRLML5103GPbF HEXFET Power MOSFET l l l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free Halogen-Free G 1 VDSS = -30V 3 D S

SUM110P08-11L

Abstract: SUM110P08 SUM110P08-11L-E3 SUM110P0811L SUM110P08-11L rev
Contextual Info: SUM110P08-11L New Product Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –80 80 ID (A)b rDS(on) (W) 0.0112 @ VGS = –10 V –110 0.0145 @ VGS = –4.5 V –109 D TrenchFETr Power MOSFET Qg (Typ) APPLICATIONS 85 nC RoHS D Automotive such as:

IRLML5103GPBF

Contextual Info: PD - 96165A IRLML5103GPbF HEXFET Power MOSFET l l l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free Halogen-Free G 1 VDSS = -30V 3 D S

Contextual Info: SUM110P08-11L New Product Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –80 80 ID (A)b rDS(on) (W) 0.0112 @ VGS = –10 V –110 0.0145 @ VGS = –4.5 V –109 D TrenchFETr Power MOSFET Qg (Typ) APPLICATIONS 85 nC RoHS D Automotive such as:

Contextual Info: PD - 94894A IRLML5103PbF HEXFET Power MOSFET l l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free G 1 VDSS = -30V 3 D S RDS(on) = 0.60Ω

IRLML2402

Contextual Info: PD - 94894 IRLML5103PbF HEXFET Power MOSFET l l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free D VDSS = -30V G RDS(on) = 0.60Ω S Description

SUM110P08-11L

Abstract: SUM110P08-11L-E3 SUM110P0811L SUM110P08
Contextual Info: New Product SUM110P08-11L Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)b 0.0112 at VGS = - 10 V - 110 0.0145 at VGS = - 4.5 V - 109 VDS (V) - 80 Qg (Typ) • TrenchFET Power MOSFET RoHS COMPLIANT 85 nC TO-263 S

72194

Contextual Info: New Product SUM110P08-11L Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)b 0.0112 at VGS = - 10 V - 110 0.0145 at VGS = - 4.5 V - 109 VDS (V) - 80 Qg (Typ) • TrenchFET Power MOSFET RoHS COMPLIANT 85 nC TO-263 S