P-CHANNEL MOSFET 110A Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF9520S Preliminary POWER MOSFET -6.8A, -100V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UF9520S is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT120P06 Power MOSFET 120A, 60V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT120P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also

p-channel Mosfet 110A

Abstract: UTT120P06
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT120P06 Power MOSFET 120A, 60V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT120P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also

Contextual Info: PD - 90437D POWER MOSFET THRU-HOLE MO-036AB IRFG5110 100V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG5110 IRFG5110 RDS(on) 0.7Ω 0.7Ω ID 1.0A -1.0A CHANNEL N P HEXFET® MOSFET technology is the key to International

IRLML5103

Abstract: sot23 footprint
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1260A IRLML5103 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching VDSS = -30V RDS(on) = 0.60Ω

IRF7416

Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1356A PRELIMINARY IRF7416 HEXFET Power MOSFET Generation V Technology l Ultra Low On-Resistance l P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description

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Abstract: SUM110P08-11 SUM110P08-11 rev 51507
Contextual Info: SUM110P08-11 New Product Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A)b Qg (Typ) –80 0.0111@ VGS = –10 V –110 113 nC D TrenchFETr Power MOSFET APPLICATIONS D Automotive such as: – High Side Switch

SUM110P04-05

Contextual Info: SUM110P04-05 New Product Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)a Qg (Typ) –40 0.005 @ VGS = –10 V –110 185 nC APPLICATIONS RoHS D Automotive – Motor Drives – Fuel Injection

Contextual Info: SUM110P04-05 New Product Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)a Qg (Typ) –40 0.005 @ VGS = –10 V –110 185 nC APPLICATIONS RoHS D Automotive – Motor Drives – Fuel Injection

IRLML5103PBF

Abstract: IRLML2246 irlml2030
Contextual Info: IRLML5103PbF l l l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free RoHS Compliant, Halogen-Free HEXFET Power MOSFET G 1 VDSS = -30V 3 D

1RF9520

Abstract: diode S68a 68A diode IRF9520S UI5 321 IRF9520 ScansUX102 d68a SMD MARKING "68A"
Contextual Info: P D -9.319G International ire 1Rectifier IRF9520 HEXFET® Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements ^D S S -

IRL*5103

Abstract: p-channel Mosfet 110A IRLMS6803 IRLML5103PBF
Contextual Info: PD - 94894 IRLML5103PbF HEXFET Power MOSFET l l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free D VDSS = -30V G RDS(on) = 0.60Ω S Description

Contextual Info: PD - 96165A IRLML5103GPbF HEXFET Power MOSFET l l l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free Halogen-Free G 1 VDSS = -30V 3 D S

SUM110P08-11L

Abstract: SUM110P08 SUM110P08-11L-E3 SUM110P0811L SUM110P08-11L rev
Contextual Info: SUM110P08-11L New Product Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –80 80 ID (A)b rDS(on) (W) 0.0112 @ VGS = –10 V –110 0.0145 @ VGS = –4.5 V –109 D TrenchFETr Power MOSFET Qg (Typ) APPLICATIONS 85 nC RoHS D Automotive such as:

Contextual Info: SUM110P08-11L New Product Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –80 80 ID (A)b rDS(on) (W) 0.0112 @ VGS = –10 V –110 0.0145 @ VGS = –4.5 V –109 D TrenchFETr Power MOSFET Qg (Typ) APPLICATIONS 85 nC RoHS D Automotive such as:

72194

Contextual Info: New Product SUM110P08-11L Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)b 0.0112 at VGS = - 10 V - 110 0.0145 at VGS = - 4.5 V - 109 VDS (V) - 80 Qg (Typ) • TrenchFET Power MOSFET RoHS COMPLIANT 85 nC TO-263 S

SUM110P08-11L-E3

Abstract: SUM110P08-11L SUM110P08-11 SUM110P08_11L SUM110P08-11L rev
Contextual Info: New Product SUM110P08-11L Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)b 0.0112 at VGS = - 10 V - 110 0.0145 at VGS = - 4.5 V - 109 VDS (V) - 80 Qg (Typ) • TrenchFET Power MOSFET RoHS COMPLIANT 85 nC TO-263 S

diode marking 355 SOT23

Abstract: IRLML2402 A2 SOT-23 mosfet IRLML5103PbF IRLML6401 SOT-23
Contextual Info: PD - 94894 IRLML5103PbF HEXFET Power MOSFET l l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free D VDSS = -30V G RDS(on) = 0.60Ω S Description

Contextual Info: PD - 94894A IRLML5103PbF HEXFET Power MOSFET l l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free G 1 VDSS = -30V 3 D S RDS(on) = 0.60Ω

sum110p08

Contextual Info: New Product SUM110P08-11L Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)b 0.0112 at VGS = - 10 V - 110 0.0145 at VGS = - 4.5 V - 109 VDS (V) - 80 Qg (Typ) • TrenchFET Power MOSFET RoHS COMPLIANT 85 nC TO-263 S

Contextual Info: SUM110P08-11L Vishay Siliconix P-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 b RDS(on) () ID (A) 0.0112 at VGS = - 10 V - 110 0.0145 at VGS = - 4.5 V - 109 Qg (Typ) 85 nC • TrenchFET Power MOSFET • Material categorization: For definitions of compliance please see

irlml2502

Abstract: IRLML2502 G IRLML5103 IRLML5103 -30V
Contextual Info: PD - 91260E IRLML5103 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = -30V G RDS(on) = 0.60Ω S Description Fifth Generation HEXFETs from International Rectifier

SUM110P04-05

Contextual Info: SUM110P04-05 Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ.) - 40 0.005 at VGS = - 10 V - 110 185 nC • TrenchFET Power MOSFET RoHS COMPLIANT TO-263 S G Drain Connected to Tab G D S Top View D

Contextual Info: SUM110P04-05 Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ.) - 40 0.005 at VGS = - 10 V - 110 185 nC • TrenchFET Power MOSFET RoHS COMPLIANT TO-263 S G Drain Connected to Tab G D S Top View D