P-CHANNEL M21 Search Results

M2106

Abstract: APM2106 APM2106SG STD-020C apm21
Contextual Info: APM2106SG Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • D2 N-Channel D2 D1 D1 30V/3.2A, RDS(ON)= 60mΩ(typ.) @ VGS= 10V G2 S2 G1 S1 RDS(ON)= 85mΩ(typ.) @ VGS= 4.5V • P-Channel -30V/-2.2A, RDS(ON)= 105mΩ(typ.) @ VGS= -10V

p-channel m21

Contextual Info: Data Sheet PA2815T1S P-channel MOS FIELD EFFECT TRANSISTOR R07DS0777EJ0100 Rev.1.00 Jun 01, 2012 Description The μPA2815T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features

Contextual Info: Data Sheet µPA2815T1S P-channel MOS FIELD EFFECT TRANSISTOR R07DS0777EJ0100 Rev.1.00 Jun 01, 2012 Description The µPA2815T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features

Contextual Info: Data Sheet PA2815T1S P-channel MOSFET R07DS0777EJ0101 Rev.1.01 May 28, 2013 –30 V, –21 A, 11 mΩ Description The μPA2815T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment.

APM2104

Abstract: APM2104SG M2104 STD-020C apm21
Contextual Info: APM2104SG Dual Enhancement Mode MOSFET N- and P-Channel Pin Description Features • N-Channel 20V/3.5A, RDS(ON)=45mΩ(typ.) @ VGS=4.5V RDS(ON)=60mΩ(typ.) @ VGS=2.5V RDS(ON)=90mΩ(typ.) @ VGS=1.8V • P-Channel S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2

APM2103SG

Abstract: STD-020C p channel mosfet
Contextual Info: APM2103SG Dual P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-2.5A RDS ON = 88mΩ(typ.) @ VGS= -4.5V RDS(ON)= 120mΩ (typ.) @ VGS= -2.5V RDS(ON)= 160mΩ (typ.) @ VGS= -1.8V • • Super High Dense Cell Design Reliable and Rugged P Channel MOSFET

CX20549

Abstract: RICOH R5C832 BCM5906M CX20549-12Z 49D9R2F-GP 6268P amd am2 6000 pin diagram G546A2P1UF-GP ISL6255HRZ WPC8765
Contextual Info: 5 4 3 2 1 PCB Layer Stackup A-NOTE 2.0 Block Diagram D Project Code:91.4T001.001 Layers:6 PCB P/N: 06235-SA AMD CPU CLK GEN ICS951412 NPT Processor Rev. G S1 package 4,5,6,7 3 DDRII 800M Channel A DDRII Slot 0 667/800 DDRII 800M Channel B DDRII Slot 1 667/800

SiS968

Abstract: kb3925 asus SIS672 ICS9LPR600CGLF-T ICS9LPR600 T1733 SST25VF080B BIOS 78L05 88E8056
Contextual Info: 5 4 3 2 CPU 1 ITP CONN. Z62Ha MEROM CLOCK GEN Socket-P D ICS 9LPR600C VRAM DDR2 32MX16M X4 D FSB 800MHz/533MHz LCD CRT LVDS ATI GPU M72-S RGB 632 BGA PCI-E 16X DDR CLOCK BUFFER NORTH BRIDGE DDR2 single Channel-1 DDR2 667MHz/533MHz DDR2 single Channel-2 Internal KB

GM300

Abstract: CM602 ft06 transistor C633 FSP400 2n1763 C621 DA402 2N2458 transistor c640 npn
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C

2SK19Y

Abstract: C682 2SK19GR X70a FSP400 40468 C621 K1202 C682A C684
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

APM2321

Abstract: APM2321A M21X STD-020C
Contextual Info: APM2321A P-Channel Enhancement Mode MOSFET Pin Description Features • -20V/-1.2A , RDS ON =370mΩ (typ.) @ VGS=-4.5V RDS(ON)=560mΩ (typ.) @ VGS=-2.5V • • • Super High Dense Cell Design Reliable and Rugged Top View of SOT-23 Lead Free Available (RoHS Compliant)

Contextual Info: APM2103QA Dual P-Channel Enhancement Mode MOSFET Features • Pin Description D1 -20V/-2.5A D1 D2 D2 RDS ON = 88mΩ(typ.) @ VGS= -4.5V RDS(ON)= 120mΩ (typ.) @ VGS= -2.5V S1 RDS(ON)= 160mΩ (typ.) @ VGS= -1.8V • • Super High Dense Cell Design G1 S2

VE880

Abstract: LE88311 sumida c8100 MBT3946DW1T1LRG LE88311DLC IIR NEON le88331 MURS120DICT-ND VE880 "pin compatible" rft rg1
Contextual Info: A D V A N C E D C O P Y Le88311/331 Dual Channel Tracking Battery VoicePort™ Device VE880 Series APPLICATIONS „ „ „ „ „ ORDERING INFORMATION Voice enabled Cable and DSL Modems Voice over IP/ATM - Integrated Access Devices IAD Residential VoIP Gateways and Routers

Contextual Info: APM2321A P-Channel Enhancement Mode MOSFET Pin Description Features • -20V/-1.2A , D RDS ON =370mΩ(typ.) @ VGS=-4.5V RDS(ON)=560mΩ(typ.) @ VGS=-2.5V • • • G Super High Dense Cell Design S Reliable and Rugged Top View of SOT-23 Lead Free Available (RoHS Compliant)

sis*307elv

Abstract: 9lpr600 SiS307ELV 88E8056 SIS 672 Sis 968 south bridge SIS 968 Asus PT116 slb9635
Contextual Info: 5 4 3 2 CPU 1 ITP CONN. Z62H MEROM Socket-P CLOCK GEN ICS 9LPR600 D FSB 667MHz/533MHz LVDS LCD SiS 307 ELV HDV Bus VBus RGB CRT D DDR CLOCK BUFFER THERMAL SENSOR ICS 9P935AF NORTH BRIDGE DDR2 Single Channel MAX6657MSA DDR2 SO-DIMM0 DDR2 667MHz/533MHz SiS 672

APM2101

Abstract: APM2101SG STD-020C apm21
Contextual Info: APM2101SG P-Channel Enhancement Mode MOSFET Pin Description Features • D -20V/-3.5A, D D RDS ON = 48mΩ(typ.) @ VGS= -4.5V D RDS(ON)= 75mΩ(typ.) @ VGS= -2.5V G RDS(ON)= 135mΩ(typ.) @ VGS= -1.8V • • • S Super High Dense Cell Design S S Reliable and Rugged

sis*307elv

Abstract: south bridge SIS 968 Sis 968 SiS307ELV asus 9LPR600 88E8056 SIS 672 sis m672 SIS672
Contextual Info: 5 4 3 2 CPU 1 ITP CONN. Z62H MEROM Socket-P CLOCK GEN ICS 9LPR600 D FSB 667MHz/533MHz LVDS LCD SiS 307 ELV HDV Bus VBus RGB CRT D DDR CLOCK BUFFER THERMAL SENSOR ICS 9P935AF NORTH BRIDGE DDR2 Single Channel MAX6657MSA DDR2 SO-DIMM0 DDR2 667MHz/533MHz SiS 672

KB910 B4

Abstract: LAD1 12v 8 pin relay LS252 CPR-187 compal n52 smd mark Socket AM2 Compal Electronics BC381 ACES-85205-0400L
Contextual Info: 5 4 3 2 1 COMPAL CONFIDENTIAL D MODEL NAME : EGQ00 COMPAL P/N : PCB NO : Revision : 2.0 D EGQ00 Schematics Document C C uFCBGA/uFCPGA Mobile Dothan ATI RS300MD + SB200 2 Channel DDR1 2005-01-11 REV : 2.0 B B Function/B LS-2522 M/B LA-2522 WLAN SW/B LS-2524

WPC8763L

Abstract: stac9228x5 realtek rtm875m f8 vga nb8p TPS5117 RTM875M-606-LF max8731ae SLG8SP513V MLX-CON10-6-GP-U transformer EC28
Contextual Info: A B C D E BATTERY CHARGER Hawke Intel Discrete Block Diagram CLK GEN 1 ICS9LPRS365 Project code PCB P/N PCB No. Revision Intel Mobile CPU 4 Merom 4M FSB:667 or 800 MHz 5, 6, 7 VRAM 16Mbx32x2 CRT 17 RGB CRT LCD 18 LVDS 51 GDDRIII 700MHz 2 DDRII 667 Channel A

CB714BF

Abstract: pn234 CB714 KB910LQF LA-3091P aos3401 Alviso JCPU1A FCM2012CF-800T06 2N27B VT6311S
Contextual Info: 5 4 3 2 1 COMPAL CONFIDENTIAL D MODEL NAME : Biathlon IBM 15R COMPAL P/N : HEL00 PCB NO : LA-3091P Revision : 1.0 D C C IBM 15R Schematics Document uFCBGA/uFCPGA Mobile Dothan Alviso 915+ ICH6-M 2 Channel DDR2 B B 2005-12-20 REV : 1.0 SW LED/B LS-3093P M/B LA-3091P

G545B1

Abstract: g5243 mq5 sensor G545B1P8U ICS9LPRS365B T61 fuse f4 ac2 cn1 150 1p0 quanta at2 IT8512E BC48
Contextual Info: 5 4 3 PE2 2 CPU CPU Thermal Sensor 1 01 P3 Penryn BlOCK DIAGRAM CLOCK GEN ICS9LPRS365 u-FCPGA 479PIN P3,4 SOCKET-P P2 D D FSB 1066/800/667 MHZ Battery DDR II CHANNEL A DDRII SO-DIMM P11 DC In NB 667/800 MHZ CRT DDC2B CRT 1x LVDS 667/800 MHZ P10 LCD 1329 PIN micro FCBGA

Contextual Info: 7 ^ 2 3 7 hü GGMbBbM SIS •SGTH SGS-THOMSON ilLËOT «! STP5N50 STP5N50FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP5N 50 STP5N 50FI Vd ss R ds oii Id 500 V 500 V < 1.6 Í2 < 1.6 £2 4 .5 A 3 A ■ T Y P IC A L RDS(on) = 1 .4 £2 . ■

M21353

Abstract: M21453G-13 M21363 35H40 M21353G m2136
Contextual Info: M21353 4.25 Gbps Twelve-Channel Backplane Equalizer and Driver with 12x12 Crosspoint Switch The M21353 is a twelve channel device designed to enable the transmission of multi-gigabit serial data through the most challenging environments. The device features twelve independent, programmable equalizers that

lfh 1001

Abstract: M21330
Contextual Info: M21330 4.25 Gbps Quad-Channel Cable Driver and Adaptive Equalizer with 4x4 Crosspoint Switch The M21330 is a quad channel device designed to enable the transmission of multi gigabit serial data through the most challenging environments. The device features four independent adaptive equalizers that automatically