APM21 Search Results

APM2150PU

Abstract: STD-020C
Contextual Info: APM2150PU P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-8A, RDS ON =125mΩ (typ.) @ VGS=-4.5V RDS(ON)=160mΩ (typ.) @ VGS=-2.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)

APM2104

Abstract: APM2104SG M2104 STD-020C apm21
Contextual Info: APM2104SG Dual Enhancement Mode MOSFET N- and P-Channel Pin Description Features • N-Channel 20V/3.5A, RDS(ON)=45mΩ(typ.) @ VGS=4.5V RDS(ON)=60mΩ(typ.) @ VGS=2.5V RDS(ON)=90mΩ(typ.) @ VGS=1.8V • P-Channel S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2

Contextual Info: APM2101SG P-Channel Enhancement Mode MOSFET Pin Description Features • D -20V/-3.5A, D D RDS ON = 48mΩ(typ.) @ VGS= -4.5V D RDS(ON)= 75mΩ(typ.) @ VGS= -2.5V G RDS(ON)= 135mΩ(typ.) @ VGS= -1.8V • • • S Super High Dense Cell Design S S Reliable and Rugged

APM2103SG

Abstract: STD-020C p channel mosfet
Contextual Info: APM2103SG Dual P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-2.5A RDS ON = 88mΩ(typ.) @ VGS= -4.5V RDS(ON)= 120mΩ (typ.) @ VGS= -2.5V RDS(ON)= 160mΩ (typ.) @ VGS= -1.8V • • Super High Dense Cell Design Reliable and Rugged P Channel MOSFET

A108

Abstract: APM2150PU B102 JESD-22
Contextual Info: APM2150PU P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-8A, D RDS ON =125mΩ (typ.) @ VGS=-4.5V G RDS(ON)=160mΩ (typ.) @ VGS=-2.5V • • • S Super High Dense Cell Design Top View of TO-252-3 Reliable and Rugged Lead Free and Green Devices Available

APM2150PU

Abstract: STD-020C
Contextual Info: APM2150PU P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-8A, RDS ON =125mΩ (typ.) @ VGS=-4.5V RDS(ON)=160mΩ (typ.) @ VGS=-2.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)

APM2101

Abstract: APM2101SG STD-020C apm21
Contextual Info: APM2101SG P-Channel Enhancement Mode MOSFET Pin Description Features • D -20V/-3.5A, D D RDS ON = 48mΩ(typ.) @ VGS= -4.5V D RDS(ON)= 75mΩ(typ.) @ VGS= -2.5V G RDS(ON)= 135mΩ(typ.) @ VGS= -1.8V • • • S Super High Dense Cell Design S S Reliable and Rugged

M2106

Abstract: APM2106 APM2106SG STD-020C apm21
Contextual Info: APM2106SG Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • D2 N-Channel D2 D1 D1 30V/3.2A, RDS(ON)= 60mΩ(typ.) @ VGS= 10V G2 S2 G1 S1 RDS(ON)= 85mΩ(typ.) @ VGS= 4.5V • P-Channel -30V/-2.2A, RDS(ON)= 105mΩ(typ.) @ VGS= -10V

Contextual Info: plerowTM APM2140-P29 Low Noise & High OIP3 Medium Power Amplifier Module Features Description • S21 = 31.4 dB @ 2110 MHz = 30.6 dB @ 2170 MHz · NF of 2.0 dB over Frequency · Unconditionally Stable · High OIP3 @ Low Current C o u pl er C o u pl er · Single 5V Supply

Contextual Info: APM2103QA Dual P-Channel Enhancement Mode MOSFET Features • Pin Description D1 -20V/-2.5A D1 D2 D2 RDS ON = 88mΩ(typ.) @ VGS= -4.5V RDS(ON)= 120mΩ (typ.) @ VGS= -2.5V S1 RDS(ON)= 160mΩ (typ.) @ VGS= -1.8V • • Super High Dense Cell Design G1 S2

circuit diagram mtk

Contextual Info: APL3205A/B Li+ Charger Protection IC Features General Description • Input Over-Voltage Protection • Programmable Input Over-Current Protection The APL3205A/B provide completed Li+ charger protections against over-voltage, over-current, and battery over-

str w 6554 a

Abstract: str 6554 STR 6456 str w 6554 str f 6456 str x 6456 BK2425-1320ALF str f 6554 NSH-03SB-S1-TG 12697
Contextual Info: Central Component Manufacturing - Cross Reference CCM PART # GCTJ-08-2-H-A1-BK-8-P1-S 22-11-2032 22-11-2042 22-11-2062 22-12-2024 22-12-2034 22-12-2034 22-12-2044 22-12-2104 30190 382811-5 39-30-1241 39-30-1241 41A-9-750 43045-0602 43045-0612 43045-0614 43045-0802

architecture of intel 80487

Abstract: pin diagram of 80487 80386 System Software Writers Guide, 231499 block diagram of intel 80487 80487 architecture architecture diagram of intel 80487 architecture of 80487 80487 math coprocessor high coprocessor 80487 80487 architecture block diagram
Contextual Info: D Pentium Processor Family Developer’s Manual Volume 3: Architecture and Programming Manual NOTE: The Pentium® Processor Family Developer’s Manual consists of three books: Pentium® Processor Order Number 241428; the 82496/82497/82498 Cache Controller and 82491/82492/82493 Cache

Contextual Info: APL3205A/B Li+ Charger Protection IC Features General Description • Input Over-Voltage Protection • Programmable Input Over-Current Protection The APL3205A/B provide completed Li+ charger protections against over-voltage, over-current, and battery over-

Contextual Info: Low Noise & High OIP3 Medium Power Amplifier Module SMD-type Last update: 2009. 12. 30. Ic V (mA) APM0400-P33 5.4 600 380 420 19 0.7 10.0 46 -10 -12 33 13x13x3.8 4G LTE APM0742-P29 5 380 698 787 34 0.9 6.6 47 -14 -8 29 10x10x3.8 CDMA Rx APM0837-P29 5 370

APL3205B

Contextual Info: APL3205A/B Li+ Charger Protection IC Features General Description • Input Over-Voltage Protection • Programmable Input Over-Current Protection The APL3205A/B provide complete Li+ charger protections against over-voltage, over-current, and battery over-

APM2101013300

Abstract: 795nm VCSEL Oclaro 795nm vcsel laser 795nm
Contextual Info: 795nm Single mode VCSEL in tilted cap TO46 Features: • Single transverse and lateral mode emission  No polarization flips in single mode current range  Tilted window hermetic TO46 package  Packaged with 30K Ohm thermistor  Absorptive and AR-coated glass window