P-CHANNEL JFET RF Search Results

Contextual Info: p m MUX-16/MUX-28 D 16-CHANNEL/ DUAL 8-CHANNEL JFET ANALOG MULTIPLEXERS OVERVOLTAGE PROTECTED ii M o n o l i t h FEATURES GENERAL DESCRIPTION • JFET Switches Rather Than CMOS • Highly Resistant To Static Discharge Damage • No SCR Latch-up Problems

p channel JFET

Abstract: MQ2N2608
Contextual Info: ISCFdÈÅåi=Ååi= text/html About News Contact keyword search: Employment Site Home part number search: MQ2N2608 #75601 RFQ/Sample Package P Channel JFET Division Lawrence Datasheet lds-0004.doc Mil-Spec Shipping 295 (none) Qual Data Contact Microsemi

Contextual Info: MUX-08/MUX-24 8-CHANNEL/DUAL 4-CHANNEL JFET ANALOG MULTIPLEXERS OVERVOLTAGE AND POWER SUPPLY LOSS PROTECTED P r e c is i o n M o n o lit h ic s In c . FEATURES • • • • • • • • • w ith low c ro ssta lk to sa tis fy a w id e va rie ty o f a p p lica tio n s.

U350

Abstract: Siliconix JFET Siliconix N-Channel JFETs TO99 package u350 siliconix
Contextual Info: C T 'S ilic o n ix U350 JmÆ in c o r p o ra te d N-Channel JFET Ring Demodulator The U350 is a se t of fo u r m atched n-channel JFETs connected as a ring d em odulator. The m atched set of JFETs has low rDS ON , high gfs, and square law operation which gives high conversion gain and

Contextual Info: APT60M75JVR A dvanced P o w er Te c h n o l o g y 600V 62A 0.075Í2 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: APT40M35JVR A dvanced P o w er Te c h n o l o g y 400V 93A 0.035Í1 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

SOT-227 Package

Contextual Info: APT8015JVFR A dvanced P o w er Te c h n o lo g y 800V 44A 0.150^ POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: APT8015JVR A dvanced P o w er Te c h n o l o g y ' soov 44a o.ison POWER MOS V M Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: APT20M22LVR A DVAN CED P o w er Te c h n o lo g y 200V 100A 0.022Í2 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V 'M

Contextual Info: C lr > A v C o ik A ^ A D n n . SPI 204 C o rp o ra tio n * SIGNAL PROCESSING EXCELLENCE HIGH I/O ANALOG ARRAY WITH JFETS DESCRIPTION The SPI 204 is a high density, high performance an alo g array containing 428 linear bipolar transistors and 16 P-channel JFET transistors as well

2N4117A NATIONAL SEMICONDUCTOR

Abstract: National Semiconductor Discrete catalog PN4117A MMBF4119 2N4117A 2N4118 2N4118A MMBF4117 MMBF4118 NATIONAL SEMICONDUCTOR TO-92
Contextual Info: bflE D • b S 0 1 1 3 0 □ □ 3 ciS0M 714 « N S C S JFET Ultra Low Input Current Amplifiers NATL S E M I C O N D D IS CR ET E N Channel V p @ V DS lD Device MMBF4117 BVgss (V) Min 40 % IfiSS (lunho) (V) <P*) Max (V) Min Max 10 0.6 2.8 10 2.8 10 (nA)

Contextual Info: APT20M22JVFR A dvanced W 7Æ P o w e r Te c h n o l o g y 200V POWER MOSV 97A 0.022^ j FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

U310

Abstract: U309 U3011 U308 u-310 u308u310 j308-310
Contextual Info: U 3 08-U 3 10 N-Channel JFET Q IM ïïÜ iD IL FEA T U R ES • is re la tiv e ly fla t o u t to 1 0 0 0 M H z. A p p lic a tio n s fo r these devices in m ilita r y , co m m ercia l and consum er c o m m u n ic a ­ tio n s e q u ip m e n t in clu d e lo w noise, high gain R F a m p lifie rs ,

Application Notes

Abstract: matched pair JFET N CHANNEL jfet Low Noise Audio Amplifier jfet transistor for VCR "voltage controlled resistor" JFET APPLICATIONS igfet jfet differential transistor jfet p channel switch FET differential amplifier circuit
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page H-2 H-2 01/99 Junction Field Effect Transistors InterFET Application Notes Introduction T he field effect transistor was actually conceived before the more familiar bipolar transistor. Due to limited technology and later the

BC237

Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1
Contextual Info: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53

NONLINEAR MODEL LDMOS

Contextual Info: Slide 1 Extracting RF Mosfet Spice Models MTT 1998 - Baltimore Md. by S. K. Leong Polyfet Rf Devices www.polyfet.com This presentation is available on our web site Slide 2 Why simulate? n n n n n n n Simulation - It’s the only way! Fast accurate results. What if analysis.

dv4 mosfets

Abstract: C12 IC GATE CA3240E DEPLETION MOSFET Harris Semiconductor jfet mos die mosfet cross reference n channel depletion MOSFET 2N4036 AN7254
Contextual Info: Harris Semiconductor No. AN7254.2 Harris Power MOSFETs April 1994 Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Author: C. Frank Wheatley, Jr. and Harold R. Ronan, Jr. gate sensitivity, as shown in Figures 1, 2, and 3, which are comparisons of the industry standard RFM10N15 with its

Contextual Info: 0.6 µm BiCMOS Process Family XB06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular BiCMOS Technology Description The XB06 Series is X-FAB‘s 0.6 Micron BiCMOS Technology. Main target applications are RF circuits and high precision analog applications mixed with

2N3797

Abstract: MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE
Contextual Info: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide

e304 fet

Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
Contextual Info: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that

AN211A

Abstract: MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola
Contextual Info: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide

MPF102 equivalent transistor

Abstract: MPF102 JFET AN211A 2N3797 mpf102 fet 2N4351 MPF102 Transistor 2N3797 equivalent mpf102 application note P-Channel Depletion Mode FET
Contextual Info: AN211A/D Field Effect Transistors in Theory and Practice http://onsemi.com APPLICATION NOTE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide Semiconductor” Field-Effect Transistor (MOSFET), or

MPF102 JFET

Abstract: motorola AN211A 2N3797 MPF102 Transistor 2N4221 MOTOROLA POWER TRANSISTOR 2N4221 motorola JFET with Yos MPF102 circuit application 2N4351 MOTOROLA igfet
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN211A/D SEMICONDUCTOR APPLICATION NOTE AN211A NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Field Effect Transistors in Theory

matched pair JFET

Abstract: N CHANNEL jfet Low Noise Audio Amplifier jfet differential transistor jfet having voltage gain 741 op-amp transistor jfet 741 opamp field effect transistors opamp 741 jfet idss 10 vp -6
Contextual Info: APPLICATION NOTES JFETS P R E C I S I O N I N E L E C T R O N I C S An introduction to Junction Field Effect Transistors JFETs The Junction Field Effect Transistor (JFET) exhibits characteristics which often make it more suited to a particular application than the bipolar transistor.