P-CHANNEL JFET RF Search Results

p channel JFET

Abstract: MQ2N2608
Contextual Info: ISCFdÈÅåi=Ååi= text/html About News Contact keyword search: Employment Site Home part number search: MQ2N2608 #75601 RFQ/Sample Package P Channel JFET Division Lawrence Datasheet lds-0004.doc Mil-Spec Shipping 295 (none) Qual Data Contact Microsemi

Contextual Info: APT40M35JVR A dvanced P o w er Te c h n o l o g y 400V 93A 0.035Í1 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: C lr > A v C o ik A ^ A D n n . SPI 204 C o rp o ra tio n * SIGNAL PROCESSING EXCELLENCE HIGH I/O ANALOG ARRAY WITH JFETS DESCRIPTION The SPI 204 is a high density, high performance an alo g array containing 428 linear bipolar transistors and 16 P-channel JFET transistors as well

2N4117A NATIONAL SEMICONDUCTOR

Abstract: National Semiconductor Discrete catalog PN4117A MMBF4119 2N4117A 2N4118 2N4118A MMBF4117 MMBF4118 NATIONAL SEMICONDUCTOR TO-92
Contextual Info: bflE D • b S 0 1 1 3 0 □ □ 3 ciS0M 714 « N S C S JFET Ultra Low Input Current Amplifiers NATL S E M I C O N D D IS CR ET E N Channel V p @ V DS lD Device MMBF4117 BVgss (V) Min 40 % IfiSS (lunho) (V) <P*) Max (V) Min Max 10 0.6 2.8 10 2.8 10 (nA)

Contextual Info: APT20M22JVFR A dvanced W 7Æ P o w e r Te c h n o l o g y 200V POWER MOSV 97A 0.022^ j FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

U310

Abstract: U309 U3011 U308 u-310 u308u310 j308-310
Contextual Info: U 3 08-U 3 10 N-Channel JFET Q IM ïïÜ iD IL FEA T U R ES • is re la tiv e ly fla t o u t to 1 0 0 0 M H z. A p p lic a tio n s fo r these devices in m ilita r y , co m m ercia l and consum er c o m m u n ic a ­ tio n s e q u ip m e n t in clu d e lo w noise, high gain R F a m p lifie rs ,

Application Notes

Abstract: matched pair JFET N CHANNEL jfet Low Noise Audio Amplifier jfet transistor for VCR "voltage controlled resistor" JFET APPLICATIONS igfet jfet differential transistor jfet p channel switch FET differential amplifier circuit
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page H-2 H-2 01/99 Junction Field Effect Transistors InterFET Application Notes Introduction T he field effect transistor was actually conceived before the more familiar bipolar transistor. Due to limited technology and later the

BC237

Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1
Contextual Info: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53

NONLINEAR MODEL LDMOS

Contextual Info: Slide 1 Extracting RF Mosfet Spice Models MTT 1998 - Baltimore Md. by S. K. Leong Polyfet Rf Devices www.polyfet.com This presentation is available on our web site Slide 2 Why simulate? n n n n n n n Simulation - It’s the only way! Fast accurate results. What if analysis.

dv4 mosfets

Abstract: C12 IC GATE CA3240E DEPLETION MOSFET Harris Semiconductor jfet mos die mosfet cross reference n channel depletion MOSFET 2N4036 AN7254
Contextual Info: Harris Semiconductor No. AN7254.2 Harris Power MOSFETs April 1994 Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Author: C. Frank Wheatley, Jr. and Harold R. Ronan, Jr. gate sensitivity, as shown in Figures 1, 2, and 3, which are comparisons of the industry standard RFM10N15 with its

Contextual Info: 0.6 µm BiCMOS Process Family XB06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular BiCMOS Technology Description The XB06 Series is X-FAB‘s 0.6 Micron BiCMOS Technology. Main target applications are RF circuits and high precision analog applications mixed with

2N3797

Abstract: MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE
Contextual Info: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide

AN211A

Abstract: MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola
Contextual Info: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide

westinghouse transistors

Contextual Info: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 55, NO. 8, AUGUST 2008 1807 A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature Robert S. Howell, Member, IEEE, Steven Buchoff, Stephen Van Campen, Member, IEEE, Ty R. McNutt, Member, IEEE, Andris Ezis, Senior Member, IEEE, Bettina Nechay, Member, IEEE,

UCC27324

Abstract: UCC28220 UCC28221 UCC28221DG4 UCC28220-Q1
Contextual Info: UCC28220, UCC28221 SLUS544E − SEPTEMBER 2003 − REVISED MARCH 2009 INTERLEAVED DUAL PWM CONTROLLER WITH PROGRAMMABLE MAX DUTY CYCLE FEATURES D 2-MHz High Frequency Oscillator with 1-MHz D D D D D D D D D APPLICATIONS D High Output Current 50-A to 100-A

UCC28220-Q1

Contextual Info: UCC28220, UCC28221 SLUS544E − SEPTEMBER 2003 − REVISED MARCH 2009 INTERLEAVED DUAL PWM CONTROLLER WITH PROGRAMMABLE MAX DUTY CYCLE FEATURES D 2-MHz High Frequency Oscillator with 1-MHz D D D D D D D D D APPLICATIONS D High Output Current 50-A to 100-A

UCC28220-Q1

Contextual Info: UCC28220, UCC28221 SLUS544E − SEPTEMBER 2003 − REVISED MARCH 2009 INTERLEAVED DUAL PWM CONTROLLER WITH PROGRAMMABLE MAX DUTY CYCLE FEATURES D 2-MHz High Frequency Oscillator with 1-MHz D D D D D D D D D APPLICATIONS D High Output Current 50-A to 100-A

Contextual Info: UCC28220, UCC28221 SLUS544C − SEPTEMBER 2003 − REVISED OCTOBER 2007 INTERLEAVED DUAL PWM CONTROLLER WITH PROGRAMMABLE MAX DUTY CYCLE FEATURES D 2-MHz High Frequency Oscillator with 1-MHz D D D D D D D D D APPLICATIONS D High Output Current 50-A to 100-A

Contextual Info: u n m TECHNOLOGY Dual, Precision JFET Input O p A m p F6RTUR6S DCSCMPTIOn • Handles 10,000pF Capacitive Load The LT1457 is a dual, JFET input op amp optimized for handling large capacitive loads In combination with preci­

Contextual Info: m im i— LTl 464/LT1465 TECHNOLOGY D u a l/Q u a d M icropow er, 1MHz C -Load P icoam pere Bias C urrent JFET Input O p Am ps F€ATUR€S DCSCftlPTIOfl • Input Bias Current: 20pA Max ■ Supply Current per Amplifier: 200juA Max The LT 1464 dual and LT1465 (quad) are the first

Contextual Info: / T L in C A B TECHNOLOGY LT1057/LT1058 Dual and Q uad JFET Input Precision High Speed Op Amps D€SCRIPTIOn F€RTUR€S • 14V//iS Slew Rate ■ 5MHz Gain-Bandwidth Product ■ Fast Settling Time ■ 150/tV Offset Voltage LT1057 ■ 180/tV Offset Voltage (LT1058)

m1305 transistor

Abstract: w431 MRF1421C Diode LT 4104 NJT1946A 7082a NJT1949 magnetron 2j42 MSF1422B magnetron 5kw
Contextual Info: INTEGRATED CIRCUITS BIPOLAR OPERATIONAL AMPLIFIER TY PE s I N G ¥ D U A L Q u A D H E X D E S C R IP T IO N NJMOP-07 NJM318 NJM741 NJM2107F NJM2130 NJM425# NJM5534 NJM 022 N JM 022B NJM 062 N JM 072B N JM 082B NJM353 NJM1458 NJM2041 NJM2043 NJM2068 NJM2082

tl084 LT

Abstract: HP 5082-4204 tl084 .000 HP5082-4204 tl072 output bridge tl074 tl084 HP-5082-4204 LT1058CN LF412A LT1057
Contextual Info: r r u JK k m n F r n i T EC H N O LO G Y Dual and Quad, JFET Input Precision High Speed Op Amps DCSCRIPTIOn F€flTUR€S • 14V/*is Slew Rate ■ SMHzGain-Bandwidth Product ■ Fast Settling Time ■ 150pcV Offset Voltage LT1057 ■ 180/iV Offset Voltage (LT1058)

Contextual Info: urm LT1464/LT1465 TECHNOLOGY D u a l/Q u a d M icro p o w e r, 1MHz C -L o a d P ic o a m p e re Bias C u rre n t JFET In p u t O p A m ps F€fflUR€S DcscMpnon • Input Bias Current: 2pA Max LT1464A 20pA Max(LT1464, LT1465) ■ Supply Current per Amplifier: 200pA Max