P-CHANNEL ENHANCEMENT MOSFET MODULE Search Results

p-channel mosfet

Abstract: TLM621
Contextual Info: Central CTLDM8002A-M621 SURFACE MOUNT TINY LEADLESS MODULETM ENHANCEMENT-MODE P-CHANNEL MOSFET TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM8002A-M621 is a Silicon P-Channel Enhancement-mode MOSFET in a small, thermally efficient, TLMTM 2x1mm package.

marking code CFR

Abstract: marking CFR
Contextual Info: CTLM8110-M832D MULTI DISCRETE MODULE SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET AND LOW VF SILICON SCHOTTKY RECTIFIER w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLM8110-M832D consists of an P-Channel Enhancement-mode MOSFET

CMLM8205

Abstract: PB CMLM8205 mosfet 4812 marking 34 diode SCHOTTKY sot-563 MOSFET D1 P-Channel Enhancement MOSFET module 4812 mosfet "Schottky Diode" Schottky Diode power mosfet 500 A
Contextual Info: Product Brief CMLM8205 Multi Discrete Module 50V, 280mA, P-Channel MOSFET and 40V, 500mA Schottky Diode SOT-563 Typical Electrical Characteristic: Description: MOSFET: The CENTRAL SEMICONDUCTOR CMLM8205 is a Multi Discrete Module consisting of a single P-Channel Enhancement Mode MOSFET

CEDM8001VL

Contextual Info: CEDM8001VL SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM8001VL is a P-Channel Enhancement-mode MOSFET packaged in the very low profile SOT-883VL case. The device is designed

CMLM8205

Abstract: mosfet low vgs
Contextual Info: Central CMLM8205 MULTI DISCRETE Semiconductor Corp. MODULE SURFACE MOUNT P-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE TM SOT-563 CASE TM DESCRIPTION: The Central Semiconductor CMLM8205 is a Multi Discrete Module™ consisting of a single P-Channel Enhancement-mode MOSFET and a Low

CMLM0584

Contextual Info: CMLM0584 Multi Discrete Module w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON P-CHANNEL MOSFET AND LOW VF SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0584 is a Multi Discrete Module™ consisting of a single P-Channel Enhancement-mode MOSFET and a

Contextual Info: CMLM0584 Multi Discrete Module w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON P-CHANNEL MOSFET AND LOW VF SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0584 is a Multi Discrete Module™ consisting of a single P-Channel Enhancement-mode MOSFET and a

Contextual Info: CMLM0584 Multi Discrete Module w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON P-CHANNEL MOSFET AND LOW VF SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0584 is a Multi Discrete Module™ consisting of a single P-Channel Enhancement-mode MOSFET and a

Contextual Info: CMLM0585 Multi Discrete Module SURFACE MOUNT SILICON P-CHANNEL MOSFET AND LOW VF SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0585 is a Multi Discrete Module™ consisting of a single P-Channel Enhancement-mode MOSFET and a

Contextual Info: CMLM8205 MULTI DISCRETE MODULE SURFACE MOUNT P-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM8205 is a Multi Discrete Module™ consisting of a single P-Channel Enhancement-mode MOSFET and a

Contextual Info: CMLM8205 Multi Discrete Module SURFACE MOUNT SILICON P-CHANNEL MOSFET AND LOW VF SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM8205 is a Multi Discrete Module™ consisting of a single P-Channel enhancement-mode MOSFET and a

high current mosfet

Contextual Info: CMLM0585 Multi Discrete Module SURFACE MOUNT SILICON P-CHANNEL MOSFET AND LOW VF SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0585 is a Multi Discrete Module™ consisting of a single P-Channel Enhancement-mode MOSFET and a

Contextual Info: CMLM0584 Multi Discrete Module SURFACE MOUNT SILICON P-CHANNEL MOSFET AND LOW VF SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0584 is a Multi Discrete Module™ consisting of a single P-Channel enhancement-mode MOSFET and a low VF Schottky

Contextual Info: CMLM0585 Multi Discrete Module SURFACE MOUNT SILICON P-CHANNEL MOSFET AND LOW VF SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0585 is a Multi Discrete Module™ consisting of a single P-Channel enhancement-mode MOSFET and a low VF Schottky

Contextual Info: CMLM0585 Multi Discrete Module SURFACE MOUNT SILICON P-CHANNEL MOSFET AND LOW VF SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0585 is a Multi Discrete Module™ consisting of a single P-Channel enhancement-mode MOSFET and a low VF Schottky

Contextual Info: CTLM8110-M832D MULTI DISCRETE MODULE SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET AND LOW VF SILICON SCHOTTKY RECTIFIER TLM832D CASE • Device is Halogen Free by design APPLICATIONS • • • • Load Power Switches DC - DC Converters LCD Backlighting

CTLM7110-M832D

Abstract: CTLM8110-M832D TLM832D marking CFR
Contextual Info: CTLM8110-M832D MULTI DISCRETE MODULE SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET AND LOW VF SILICON SCHOTTKY RECTIFIER TM Top View Bottom View TLM832D CASE APPLICATIONS • Load Power Switches • DC / DC Converters • LCD Backlighting • Battery powered portable devices

VKM40-06P1

Abstract: eco-pac CoolMOS Power Transistor power mosfet 200A mosfet Vds 50 Vgsth a22055 welding mosfet
Contextual Info: VKM40-06P1 ID25 = 38 A VDSS = 600 V Ω RDSon = 70 mΩ CoolMOS Power MOSFET in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base 1 L4 L6 A1 L9 K 12 P 18 R 18 NTC Preliminary data sheet E10 F10 X 15 K 13

VKM40-06P1

Abstract: eco-pac vkm40
Contextual Info: VKM40-06P1 ID25 = 38 A VDSS = 600 V Ω RDSon = 70 mΩ CoolMOS Power MOSFET in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base 1 L4 L6 A1 L9 K 12 P 18 R 18 NTC Preliminary data sheet E10 F10 X 15 K 13

mosfet transistor 0.35 um

Contextual Info: VHM 40-06P1 CoolMOS Power MOSFET in ECO-PAC 2 ID25 = 38 A VDSS = 600 V RDSon = 70 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base 1 Preliminary data L4 L6 K 12 L9 P 18 R 18 NTC F 10 X 15 K 10 K 13 T 18 V 18

CoolMOS Power Transistor

Abstract: power mosfet 200A VHM40-06P1
Contextual Info: VHM40-06P1 ID25 = 38 A VDSS = 600 V Ω RDSon = 70 mΩ CoolMOS Power MOSFET in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base 1 L4 L6 K 12 Preliminary data sheet L9 P 18 R 18 NTC F10 K 13 K10 Pin arangement see outlines

Contextual Info: VHM 40-06P1 ID25 = 38 A VDSS = 600 V RDSon = 70 mΩ CoolMOS Power MOSFET in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base 1 L4 L6 Preliminary data K 12 L9 P 18 R 18 NTC F 10 X 15 K 10 K 13 T 18 V 18

Contextual Info: VHM40-06P1 ID25 = 38 A VDSS = 600 V Ω RDSon = 70 mΩ CoolMOS Power MOSFET in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base K 12 L9 P 18 R 18 NTC Preliminary data sheet 1 L4 L6 F10 K 13 K10 Pin arangement see outlines

Contextual Info: VKM 40-06P1 ID25 = 38 A VDSS = 600 V RDSon = 70 mΩ CoolMOS Power MOSFET in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET  Package with Electrically Isolated Base L4 L6 Preliminary data K 2 A L9 E 0 P 8 R 8 NTC F 0 X 5 K 0 K 3