P-CHANNEL DEPLETION MODE FET Search Results

ultra FAST DMOS FET Switches

Abstract: SD2100 depletion fet depletion mode fet SST2100 XSD2100 FAST DMOS FET Switches
Contextual Info: N-Channel Depletion Mode Lateral DMOS FET CCIIOQIC CORPORATION \J SD2100/SST2100 FEATURES DESCRIPTION • Fast S w itching. toN 1.0ns ! . crss2 p f The SD2100/SST2100 is a depletion mode DMOS lateral FET

SD2100

Contextual Info: SD2100 N-Channel Depletion-Mode Lateral DMOS FET in c o r p o ra t e d The SD2100 is a depletion-mode MOSFET which utilizes our lateral DMOS process to provide low capacitance, fast switching, and high operating frequency. This DMOS process effectively bridges the

P-Channel Depletion-Mode

Abstract: MARKING 2299 mos diode p3c TP5322 TP5322K1 TP5322K1-G TP5322N8 analog transistor 026A
Contextual Info: TP5322 P-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex TP5322 is a low threshold enhancementmode normally-off transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate

Contextual Info: TP5322 P-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex TP5322 is a low threshold enhancementmode normally-off transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate

J FET RF Cascode Input

Abstract: T431 Teledyne Semiconductor teledyne fet u
Contextual Info: TELEDYNE C O M P O N EN T S döE » MI Ö TlTbO H 000 3430 T - US'- b « -S '* SD2100 SEMICONDUCTOR_ N-CHANNEL DEPLETION-MODE D-MOS FET ORDERING INFORMATION TO-2Q6AF (TO-72 Hermetic Package SD2100DË with Shorting Ring on lead«

CF739 R

Abstract: CF739 siemens gaas fet
Contextual Info: 32E D • 023ti3SQ 0G17342 1 H S I P GaAsFET SIEMENS/ SPCL*. SEMICONDS CF739 T 'S I- a S ' • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners • Low noise • High gain

mt5300

Contextual Info: ^ S u p e rte x me. DN2535 DN2540 Low Thresh old Preliminary N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information O rder Num ber / Package b v dsx/ ^D S O N b v dgx (m ax) '□ss (m in) TO-39 TO-92 TO -220 TO -243AA* DIE 350V 250 150mA DN2535N2

Contextual Info: Supertex inc. DN3135 New Product N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package BV dsx / ^DS ON Id ss B V dgx (max) (min) TO-243AA* Die* 350V 35ß 180mA DN3135N8 DN3135NW * S am e as S O T-89. P roducts shipped on 2 000 piece c a rrie r ta p e reels.

Contextual Info: Supertex inc. DN3535 New Product N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package BV dsx / ^D S ON Idss b v dgx (max) (min) TO-243AA* Die 350V 10ß 200mA DN3535N8 DN3535NW * S a m e as SO T-89. P roducts shipped on 2 000 piece c a rrie r tape reels.

Contextual Info: Supertex inc. DN3145 Pre-Release Information N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package BV dsx / ^D S ON Idss b v dgx (max) (min) TO-243AA* 450V 60ß 120mA DN3145N8 * S a m e as S O T-89. P roduct shipped on 2 000 piece c a rrie r tape reels.

Contextual Info: _ _| N-Channel Depletion Mode Lateral DMOS FET _ CUlOQIC CO RPO RATIO N v SD2100/SST2100 F E A TU R E S D E S C R IP T IO N toN 1 .Ons • Fast S w itc h in g . • Lo w C a p a c ita n c e . c rss 2p f

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF9811T1 The RF Small Signal Line G allium Arsenide N-Channel Depletion-Mode MESFET Designed for use in driver stages of moderate power RF amplifiers to 2 GHz. Typical ap p lic atio n s are ce llu la r radio s and personal com m unication

Contextual Info: S u p e r te x in c . DN2530 Preliminary N-Channel Depletion-Mode Vertical DMOS FETs Orderina Informât on Order Number / Package BVosx/ R ds <o n > I dss BVdgx max (min) TO-92 TO-243AA* Die 300V 12Q 200mA DN2530N3 DN2530N8 DN2530ND ' Same as SOT-89. Product shipped on 2000 piece carrier tape reels.

Contextual Info: Supertex inc. DN3525 Pre-Release Information N-Channel Depletion-Mode Vertical DMOS FETs < CD Ordering Information * max 250V 6.0Ì2 300mA D n X b v dgx Ipss (min) R d S(ON) Order Num ber / Package TO-243AA* Die* DN3525N8 DN3525NW S a m e as SO T-89. P roducts shipped on 2 000 piece c a rrie r ta p e reels.

N-Channel JFET FETs

Abstract: ft960 Field Effect Transistors C847 P-Channel Depletion Mosfets P-Channel Depletion Mode FET p-channel jfet rf JFET with Yos MTP75N06HD BS17
Contextual Info: ON Semiconductor Field Effect Transistors and Power TMOS MOSFETs ¨ Field Effect Transistors Field Effect Transistors JFETs TMOS MOSFETs JFETs operate in the depletion mode. They are available in both P- and N-channel and are offered in both Through-hole and Surface Mount Packages. Applications include generalpurpose amplified, switches and choppers, and RF amplifiers and mixers. These devices are

P-Channel Depletion Mosfets

Abstract: shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor
Contextual Info: AN101 An Introduction to FETs The family tree of FET devices Figure 1 may be divided into two main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxide- semiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in

p channel depletion mosfet

Abstract: list of n channel fet P-Channel Depletion Mode FET shockley diode Depletion MOSFET 6D n channel depletion MOSFET list of n channel MOSFET P-Channel Depletion Mode Field Effect Transistor depletion p mosfet P-Channel Depletion Mosfets
Contextual Info: AN101 An Introduction to FETs Introduction The basic principle of the field-effect transistor FET has been known since J. E. Lilienfeld’s patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic device which provides the designer the means to accomplish nearly every circuit function. At one time, the

P-Channel Depletion Mode FET

Abstract: p channel depletion mosfet an101 siliconix N-Channel JFET FETs JFETs Junction FETs Junction FETs JFETs list of n channel fet n channel depletion MOSFET Depletion MOSFET depletion
Contextual Info: AN101 Siliconix An Introduction to FETs Introduction The basic principle of the fieldĆeffect transistor FET has been known since J. E. Lilienfeld's patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic

P-Channel Depletion Mode FET

Abstract: P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note list of n channel fet shockley diode p channel depletion mosfet
Contextual Info: AN101 An Introduction to FETs The family tree of FET devices Figure 1 may be divided into two main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxidesemiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in

all mosfet equivalent book

Abstract: free all transistor equivalent book free transistor equivalent book power bjt advantages and disadvantages AN9010 vmosfet BJT isolated Base Drive circuit Drive Base BJT FQP10N20 n Power mosfet depletion
Contextual Info: July, 2000 AN9010 MOSFET Basics By K.S.Oh CONTENTS 1. History of Power MOSFETs. 2 2. FETs . 3

MOS FET SOT-223

Abstract: sot223 transistor pinout MOS FET SOT-223 ON depletion mode fet n mosfet depletion N-Channel Depletion-Mode MOSFET high voltage CPC5621A CPC5603CTR fet N-Channel transistor 250V DS depletion MOSFET
Contextual Info: CPC5603C N Channel Depletion Mode FET Features • Low on resistance 8 ohms • Breakdown voltage 415V minimum • High input impedance • Low input and output leakage • Small package size SOT-223 • PC Card PCMCIA Compatible • PCB Space and Cost Savings

MOS FET SOT-223 ON

Abstract: mosfet depletion CPC5602C CPC5602CTR CPC5610A CPC5611A CPC5620A CPC5621A CPC5622A EIA-481-2
Contextual Info: CPC5602C N Channel Depletion Mode FET Features • Low on resistance 8 ohms • Breakdown voltage 350V minimum • High input impedance • Low input and output leakage • Small package size SOT-223 • PC Card PCMCIA Compatible • PCB Space and Cost Savings

CPC5602C

Abstract: CPC5602CTR CPC5610A CPC5611A CPC5620A CPC5621A CPC5622A EIA-481-2 bo75
Contextual Info: CPC5602C N Channel Depletion Mode FET Features • • • • • • • Low On-resistance 8 ohms Breakdown voltage 350V minimum High input impedance Low input and output leakage Small package size SOT-223 PC Card PCMCIA Compatible PCB Space and Cost Savings

AN211A

Abstract: MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola
Contextual Info: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide