P-CHANNEL 200V Search Results

Contextual Info: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel Order Number/Package P-Channel 7.0 SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low

Contextual Info: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel 7.0 Order Number/Package P-Channel SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low

TC2320TG

Abstract: ultrasound transducer circuit driver 1mhz TC2320 mosfet buffers output current 100mA
Contextual Info: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel 7.0 Order Number/Package P-Channel SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low

Contextual Info: Supertexinc. TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVpss/BV^ N-Channel P-Channel 200V -200V Order Number/Package ^DS ON ( m 8 X ) N-Channel 7.0 SO-8 P-Channel 12 TC2320TG Features Low Threshold DMOS Technology □ Low threshold □ Low on resistance

TPC8404

Contextual Info: TPC8404 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type P Channel π-MOSV/N Channel π-MOSV TPC8404 Motor Dreive Switching Regulator Applications • • Unit: mm Low drain-source ON resistance: P Channel RDS (ON) = 1.85 Ω (typ.) N Channel RDS (ON) = 1.2 Ω (typ.)

TPC8404

Contextual Info: TPC8404 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type P Channel π-MOSV/N Channel π-MOSV TPC8404 Motor Dreive Switching Regulator Applications • • Unit: mm Low drain-source ON resistance: P Channel RDS (ON) = 1.85 Ω (typ.) N Channel RDS (ON) = 1.2 Ω (typ.)

100V 60A Mosfet

Abstract: 50V 60A MOSFET P-Channel 200V MOSFET MOSFET ESD Rated P-Channel 451 MOSFET Pchannel 15a 50v p-channel mosfet P-Channel 60V MOSFET P-Channel Enhancement-Mode
Contextual Info: POWER MOSFETs 4 P-CHANNEL POWER MOSFETs PAGE P-CHANNEL POWER MOSFET DATA SHEETS IRFU9110, IRFR9110 3.1A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power M O S F E T s . 4-3 IRFU9120, IRFR9120 5.6A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power M O S F E T s .

to-247 to-220 to-3p

Abstract: IXTA52P10P IXTA36P15P IXTN40P50P IXTQ52P10P sot-227 footprint IXTA10P50P ixtq IXTH10P50 IXTH10P50P
Contextual Info: IXYS POWER Efficiency through Technology N EW P RO D U C T B RIE F PolarPTM P-Channel Power MOSFETs Next Generation P-Channel Power MOSFETs -100V to -500V MAY 2008 OVERVIEW IXYS’ PolarP P-Channel Power MOSFETs are designed to bring a more cost-effective

SFR9230B

Abstract: SFU9230B
Contextual Info: SFR9230B / SFU9230B 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

SFR 252 diode

Contextual Info: SFR9230B / SFU9230B 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

FQT3P20TF

Contextual Info: QFET TM FQT3P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

TC227

Contextual Info: [ /Title IRFR9 220, IRFU92 20 /Subject (3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, PChannel Power MOSFETs, TO251AA, TO252AA) /Creator () /DOCI IRFR9220, IRFU9220 Semiconductor 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs

FQT3P20

Contextual Info: QFET TM FQT3P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: QFET TM FQT3P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

ZXMP2120E5

Abstract: ZXMP2120G4 ZXMP2120G4TA ZXMP2120G4TC
Contextual Info: ZXMP2120G4 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 25 ; ID = 200mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high

ZXMP2120G4TA

Abstract: ZXMP2120G4TC ZXMP2120E5 ZXMP2120G4
Contextual Info: ZXMP2120G4 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 25 ; ID = 200mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high

Contextual Info: MCH6613 Ordering number : EN6920B SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFET MCH6613 General-Purpose Switching Device Applications Features • • • The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low

SFR9230B

Abstract: SFU9230B
Contextual Info: SFR9230B / SFU9230B SFR9230B / SFU9230B 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: ZXMP2120E5 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 28 ; ID = -122mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high

Contextual Info: ZXMP2120E5 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 28 ; ID = -122mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high

P120

Abstract: ZXMP2120E5 ZXMP2120E5TA ZXMP2120G4 FS50D
Contextual Info: ZXMP2120E5 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 28 ; ID = -122mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high

p-CHANNEL POWER MOSFET 600v

Abstract: IXTH20P50P IXTP28P065T 014 IR MOSFET Transistor P channel MOSFET 10A ixtq IXTA36P15P IXTA76P10T IXTH16P60P IXTK32P60P
Contextual Info: NEW PRO D U CT B RIEF Introducing P-Channel Power MOSFETs next generation p-channel power mosfets -50v to -600v SEPTEMBER 2008 OVERVIEW IXYS has reinforced its P-Channel Power MOSFET portfolio with the introduction of two advanced new families; TrenchPTM and PolarPTM. These families take

FQP5P20

Contextual Info: FQP5P20 May 2000 QFET TM FQP5P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

sot23-5 marking ha

Abstract: SOT23-5 TBA
Contextual Info: ZXMP2120E5 ADVANCE INFORMATION 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 28 ; ID = 150mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high