P-CHANNEL 01 Search Results

A12 marking

Abstract: A12S MARKING A12 SOT-23 n-channel SOT-89 P-channel A12 s M/TOREX MARKING RULE
Contextual Info: XP13/15/16 Series •MARKING RULE ① Represents channel and product group MARK CHANNEL/PRODUCT GROUP ●XP13x Series 1 2 3 4 5 ①②③ N-Channel, Single P-Channel, Single N-Channel, Dual P-Channel, Dual N-Channel, P-Channel, Complementary ②,③ Represents Product number

TPC8403

Abstract: 5106a
Contextual Info: TPC8403 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type P Channel U-MOSII/N Channel U-MOSII TPC8403 Motor Dreive Notebook PC Portable Machines and Tools Unit: mm • P Channel RDS (ON) = 45 mΩ (typ.) N Channel RDS (ON) = 25 mΩ (typ.) High forward transfer admittance: P Channel |Yfs| = 6.2 S (typ.)

si3529

Abstract: Si3529DV SI3529DV-T1-E3
Contextual Info: Si3529DV New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel rDS(on) (W) 0.125 @ VGS = 10 V 2.250 0.165 @ VGS = 4.5 V 1.95 0.215 @ VGS = –10 V –1.76 0.335 @ VGS = –4.5 V

TPC8404

Contextual Info: TPC8404 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type P Channel π-MOSV/N Channel π-MOSV TPC8404 Motor Dreive Switching Regulator Applications • • Unit: mm Low drain-source ON resistance: P Channel RDS (ON) = 1.85 Ω (typ.) N Channel RDS (ON) = 1.2 Ω (typ.)

TPC8404

Contextual Info: TPC8404 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type P Channel π-MOSV/N Channel π-MOSV TPC8404 Motor Dreive Switching Regulator Applications • • Unit: mm Low drain-source ON resistance: P Channel RDS (ON) = 1.85 Ω (typ.) N Channel RDS (ON) = 1.2 Ω (typ.)

Contextual Info: Si3529DV New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel rDS(on) (W) 0.125 @ VGS = 10 V 2.250 0.165 @ VGS = 4.5 V 1.95 0.215 @ VGS = –10 V –1.76 0.335 @ VGS = –4.5 V

Contextual Info: TPC8403 TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type P Channel U-MOSII/N Channel U-MOSII TPC8403 Motor Drive Applications Notebook PC Applications Unit: mm Portable Equipment Applications • • Low drain-source ON resistance: P Channel RDS (ON) = 45 mΩ (typ.)

Contextual Info: TPC8403 TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type P Channel U-MOSII/N Channel U-MOSII TPC8403 Motor Drive Applications Notebook PC Applications Unit: mm Portable Equipment Applications • • Low drain-source ON resistance: P Channel RDS (ON) = 45 mΩ (typ.)

tpc8403

Contextual Info: TPC8403 TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type P Channel U-MOSII/N Channel U-MOSII TPC8403 Motor Drive Applications Notebook PC Applications Unit: mm Portable Equipment Applications • • Low drain-source ON resistance: P Channel RDS (ON) = 45 mΩ (typ.)

Contextual Info: TPC8403 TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type P Channel U-MOSII/N Channel U-MOSII TPC8403 Motor Drive Applications Notebook PC Applications Portable Equipment Applications • Unit: mm Low drain-source ON resistance: • P Channel RDS (ON) = 45 mΩ (typ.)

TPC8405

Contextual Info: TPC8405 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type P Channel U−MOS IV/N Channel U-MOS III TPC8405 Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm z Low drain-source ON resistance : P Channel RDS (ON) = 25 mΩ (typ.)

TPC8405

Contextual Info: TPC8405 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type P Channel U−MOS IV/N Channel U-MOS III TPC8405 Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm z Low drain-source ON resistance : P Channel RDS (ON) = 25 mΩ (typ.)

TPC8405

Contextual Info: TPC8405 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type P Channel U−MOS IV/N Channel U-MOS III TPC8405 Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm z Low drain-source ON resistance : P Channel RDS (ON) = 25 mΩ (typ.)

lptt

Abstract: MM74C907
Contextual Info: MM54C906,MM54C907,MM74C906,MM74C907 MM54C906 MM74C906 Hex Open Drain N-Channel Buffers MM54C907 MM74C907 Hex Open Drain P-Channel Buffers Literature Number: SNOS342A MM54C906 MM74C906 Hex Open Drain N-Channel Buffers MM54C907 MM74C907 Hex Open Drain P-Channel Buffers

Contextual Info: Data Sheet µPA2816T1S P-channel MOS FIELD EFFECT TRANSISTOR R07DS0778EJ0100 Rev.1.00 Jun 01, 2012 Description The µPA2816T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features

Contextual Info: Data Sheet µPA2814T1S P-channel MOS FIELD EFFECT TRANSISTOR R07DS0776EJ0100 Rev.1.00 Jun 01, 2012 Description The µPA2814T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features

Contextual Info: MA6301S10000000 N-Ch and P-Ch Fast Switching MOSFETs Rating Symbol Parameter N-Channel P-Channel Units VDS Drain-Source Voltage 60 -60 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D061009

Contextual Info: Data Sheet PA2816T1S P-channel MOS FIELD EFFECT TRANSISTOR R07DS0778EJ0100 Rev.1.00 Jun 01, 2012 Description The μPA2816T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features

Contextual Info: MA2607V10000000 N-Ch and P-Ch Fast Switching MOSFETs Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage N-Channel P-Channel 20 -20 Units V TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D032610

Contextual Info: MA2604V10000000 N-Ch and P-Ch Fast Switching MOSFETs Rating Symbol Parameter N-Channel P-Channel Units VDS Drain-Source Voltage 20 20 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D032610

p-channel m21

Contextual Info: Data Sheet PA2815T1S P-channel MOS FIELD EFFECT TRANSISTOR R07DS0777EJ0100 Rev.1.00 Jun 01, 2012 Description The μPA2815T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features

Contextual Info: MA3805V10000000 N-Ch and P-Ch Fast Switching MOSFETs Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage N-Channel P-Channel 30 -30 Units V TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D032610

Contextual Info: Data Sheet µPA2815T1S P-channel MOS FIELD EFFECT TRANSISTOR R07DS0777EJ0100 Rev.1.00 Jun 01, 2012 Description The µPA2815T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features

Contextual Info: Data Sheet PA2814T1S P-channel MOS FIELD EFFECT TRANSISTOR R07DS0776EJ0100 Rev.1.00 Jun 01, 2012 Description The μPA2814T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features