P MOSFET Search Results

P06E

Abstract: RFT1P06E TB334
Contextual Info: CT T ODU CEMEN IL R P E A S T L R E P TE OL RE 88-IN om OBS ENDED 8 1 s OMM lication intersil.c RECSheet p @ p p Data December 2000 A NO p ta ral Cent ail: cen l l a C or em 1.4A, 60V, 0.285 Ohm, ESD Rated, P-Channel Power MOSFET [ /Title RFT1 P06E /Subject

sot-363 n-channel mosfet

Abstract: sot-363 p-channel mosfet Dual N-Channel mosfet sot-363 marking code 12 SOT-363 amplifier high current sot-363 p-channel mosfet MARKING 3C5 CMKDM3590 Dual P-Channel mosfet sot-363 SOT-363 marking th CMKDM3575
Contextual Info: Central CMKDM3590 N-CH/N-CH CMKDM7590 P-CH/P-CH CMKDM3575 N-CH/P-CH SURFACE MOUNT N-CHANNEL AND P-CHANNEL DUAL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS TM Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are combinations of dual N-Channel and P-Channel

TD3001

Contextual Info: TD3001Y N- and P-Channel Half-Bridge MOSFETs 'Siliconix incorporated SO PACKAGE PRODUCT SUMMARY N-souRCE r r >d V ’X ’ (A) N-Channel 30 1.5 0.61 P-Channel -30 2 0.39 V (BR)DSS T I N-DRAIN N-GATE r r ~ l~ l N-DRAIN p-souRCE r r ~1~| P-DRAIN P-GATE C E

SMD10P05L

Abstract: 1A 5v input 5v output regulator SMD10P05 Matsuo Tantalum 2N3904 ICL7611 Si9433DY P-channel power mosfet
Contextual Info: DESIGN SHOWCASE P-FET linear regulator has low dropout voltage P-channel MOSFETs P-FETs , though more expensive than pnp transistors, are free of the dissipation loss associated with base drive in a pnp circuit. P-FETs also have a lower saturation voltage

IRF7319

Abstract: 49AA
Contextual Info: International IG R Rectifier P D -9.1606 IRF7319 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fglly Avalanche Rated * -CHANNEL UOSFE* ^ "P -O L D I SI I Gt a r-*- i—.h N-Cti P-Ch

amplifier marking code a c8g

Abstract: CMLDM8120 C81 diode
Contextual Info: Central CMLDM8120 CMLDM8120G* SURFACE MOUNT PICOminiTM P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET TM Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are Enhancement-mode P-Channel Field Effect Transistors, manufactured by the P-Channel DMOS Process,

ADR441

Abstract: ADR440 ADR444 ADR445 ADR443 adr441brz
Contextual Info: Ultralow Noise, LDO XFET Voltage References with Current Sink and Source ADR440/ADR441/ADR443/ADR444/ADR445 PIN CONFIGURATIONS Ultralow noise 0.1 Hz to 10 Hz ADR440: 1 V p-p ADR441: 1.2 μV p-p ADR443: 1.4 μV p-p ADR444: 1.8 μV p-p ADR445: 2.25 μV p-p

AD520* differential amplifier

Abstract: ADR440 ADR441 ADR443 ADR444 ADR445
Contextual Info: Ultralow Noise, LDO XFET Voltage References with Current Sink and Source ADR440/ADR441/ADR443/ADR444/ADR445 PIN CONFIGURATIONS Ultralow noise 0.1 Hz to 10 Hz ADR440: 1 V p-p ADR441: 1.2 μV p-p ADR443: 1.4 μV p-p ADR444: 1.8 μV p-p ADR445: 2.25 μV p-p

Contextual Info: [ /Title RFF60P 06 /Subject (25A, 60V, 0.030 Ohm, P-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, P-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998

Contextual Info: Si4967DY V1SHAY Siliconix Dual P-Channel 1.8-V G-S MOSFET New Product S2 Q Si o SO-8 6 6 □i D, P-Channel MOSFET 6 6 D2 D2 P-Channel MOSFET ABSOLUTE M AXIMUM RATINGS (TA = 25° C UNLESS OTHERWISE NOTED) P A R A M ETER SYM BOL L IM IT Drain-Source Voltage

smd diode sm 3c

Abstract: tr/smd diode sm 3c
Contextual Info: |p |-0 p p jQ j-jQ P |Q | Provisional Data Sheet No. PD-9.1543A IQ R Rectifier HEXFET POWER MOSFET IRFN0S4 N -C H A N N E L 60 Volt, 0.020Q HEXFET Product Summary H E X F E T technology is the key to International Rectifier's advanced line of power MOSFET transis­

marking code R

Abstract: MARKING CODE W
Contextual Info: Central CMBDM3590 N-CH CMBDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMBDM3590 and CMBDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs

CMUDM7590

Abstract: on semiconductor marking code sot CMUDM3590
Contextual Info: Central CMUDM3590 N-CH CMUDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUDM3590 and CMUDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs

MOSFET P-channel SOT-23

Abstract: Power MOSFET N-Channel sot-23 CMPDM7590 C759 CMPDM3590 C359 sot-23 P-Channel MOSFET MOSFET P channel SOT-23 P-Channel SOT-23 Power MOSFET
Contextual Info: Central CMPDM3590 N-CH CMPDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM3590 and CMPDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs

Contextual Info: TC1550 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description 500V breakdown voltage Independent N- and P-channels Electrically isolated N- and P-channels Low input capacitance Fast switching speeds Free from secondary breakdowns Low input and output leakage

p-channel mosfet transistor low power

Abstract: mosfet low vgs CEDM8001 p-channel DMOS P-channel MOSFET VGS -25V P-channel power mosfet 30V
Contextual Info: CEDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM8001 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.

Contextual Info: SÌ4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET New Product V p s (V» -12 RDSfOM} ( ° ) I d (A) 0.023 @ VGs = -4.5 V ±7.5 0.030 @ VGS = -2 .5 V ±6 .7 0.045 @ Vqs = -1 -8 V ±5.4 -JuA 9° ' A V* Si S2 p p SO-8 Gì “n ! 3- n ! n Di n O2 Dt

ADR420

Abstract: ADR420AR ADR420BR ADR421 ADR421AR ADR423 ADR423AR ADR425 ADT421BR micromechanical
Contextual Info: a Ultraprecision Low Noise, 2.048 V/2.500 V/ 3.00 V/5.00 V XFET Voltage References ADR420/ADR421/ADR423/ADR425 FEATURES Low Noise 0.1 Hz to 10 Hz ADR420: 1.75 ␮V p-p ADR421: 1.75 ␮V p-p ADR423: 2.0 ␮V p-p ADR425: 3.4 ␮V p-p Low Temperature Coefficient: 3 ppm/؇C

Contextual Info: Supertexinc. TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVpss/BV^ N-Channel P-Channel 200V -200V Order Number/Package ^DS ON ( m 8 X ) N-Channel 7.0 SO-8 P-Channel 12 TC2320TG Features Low Threshold DMOS Technology □ Low threshold □ Low on resistance

1h32

Abstract: diode 48 TO-257AA Package 1E14 2E12 OM9130STC LD102A
Contextual Info: OM913QSTC RADIATION HARDENED POWER MOSFETS IN HERMETIC ISOLATED PACKAGE P-CHANNEL 100V, 10 Am p, P-Channel, Radiation Hardened Power M O SFET In A Herm etic Metal Package FEATURES • • • • • • Rated As Radiation Hard Avalanche Energy Rated Isolated Hermetic Package

Contextual Info: CMLDM8120 CMLDM8120G* SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are Enhancement-mode P-Channel Field Effect Transistors, manufactured by the P-Channel DMOS

Contextual Info: CMLDM8120 CMLDM8120G* SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are Enhancement-mode P-Channel Field Effect Transistors, manufactured by the P-Channel DMOS

S-49538

Abstract: 49538
Contextual Info: Temic SÎ6933DQ S e m i c o n d u c t o r s Dual P-Channel 30-V D-S Rated MOSFET Product Summary v DS(V) r DS(on) (£2) -30 Id (A) 0.045 @ VGS = -10 V ±3.5 0.085 @ VGS = -4-5 V ±2.5 p o '* St O Sj Q TSSO P-8 g2 t- * 1 a nt Top View P-Channel M OSFET TSSOP-8

LT 220 diode

Contextual Info: ADVANCED POWER TECHNOLOGY MIE D • QESTIOS GGOOSIS 7bT M A V P AD VAN CED P O W E R .[ t - 3pi-i s Te c h n o lo g y A P T 6017AFN A P T5 5 1 7 AFN 600V 3 9 .0A 0.17 ijj 550V 3 9 .0 A 0.17 ijj POWER MQS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET%