P J 85 DIOD Search Results

Contextual Info: SEMICONDUCTOR KDS193 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Small Package : SOT-23. E B L L ・Low Forward Voltag : VF=0.9V Typ. . 2 A H 1 P Reverse Voltage VRM 85 V VR 80 V J UNIT K RATING P N SYMBOL

Contextual Info: SEMICONDUCTOR KDS226 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Small Package : SOT-23. E B L L ・Low Forward Voltag : VF=0.9V Typ. . 2 A H 1 P Reverse Voltage VRM 85 V VR 80 V J UNIT K RATING P N SYMBOL

KDS184

Contextual Info: SEMICONDUCTOR KDS184 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Small Package : SOT-23. E B L L ・Low Forward Voltag : VF=0.9V Typ. . 2 A H 1 P Reverse Voltage VRM 85 V VR 80 V J UNIT K RATING P N SYMBOL

Contextual Info: SEMICONDUCTOR KDS181 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Small Package : SOT-23. E B L L ・Low Forward Voltag : VF=0.92V Typ. . 2 A H 1 P Reverse Voltage VRM 85 V VR 80 V J UNIT K RATING P N SYMBOL

CNW85

Abstract: optocoupler ic MBB037 Optocoupler 601 philips 23 BS415 BS7002 CNW84 VDE0884
Contextual Info: PH ILIP S 41E INTERNATIONAL 7iiQôab D oa3aHsa b m p h i n 7 " - v / - 8 3 P ro d u c t s p e c ific a tio n P h ilip s S e m ico n d u cto rs J C N W 8 4/C N W 85 H eavy duty o p to co u p lers FEATURES • Minimum 2 mm isolation thickness between emitter and

B585

Abstract: rs tube
Contextual Info: 6DT4 - TUNO-SOL DIODE DIODE FO R D A M P E R S E R V IC E IN CO LO R T .V . R E C E IV E R S A N Y MOUNTING POSITION G LASS BU LB J E D E C 4CG S H O R T IN T E R M E D IA T E S H E L L O C T A L 5 P IN B A S E B5-85 O U T L IN E D R A W IN G J E D E C 9-44

Contextual Info: 3.3V CMOS SINGLE 2-INPUT POSITIVE-NAND GATE WITH 5 VOLT TOLERANT I/O J m ïï., D E S C R IP TIO N : FE A T U R E S : - 0.5 MICRON CMOS Technology - ESD > 2000V per MIL-STD-883, Method 3015; - 0.65mm pitch P S O P package - Extended commercial range of - 40° C to +85° C

SIOV-B80K460

Abstract: Varistor SIOV-B80K460 SIOV-B40K420 SIOV-B40K440 SIOV-B25K420 SIOV-B60K550 Q69X4357 Q69X3311
Contextual Info: Block Varistors Maximum ratings f A = 85 C Type Ordering code Opera ing voltag ^RM S ^DC Surge current Energy absorption Power dissipation Viax W vvmax 1 max p 8/20 (.is (2 ms) V V A J w SIOV-B25K420 SIOV-B32K420 SIOV-B40K420 SIOV-B60K420 SIOV-B80K420 Q69X3306

OPB844A

Abstract: OPB844B
Contextual Info: ¿ 0 OPTEK P roduct B ulletin OPB844 J u ly 1996 Slotted Optical Switches Types OPB844A, OPB844B Features A bso lu te M axim um Ratings T a = 25° C unless otherw ise noted • • • • • Storage and Operating Temperature Range. -40° C to +85° C

1xys

Contextual Info: □IXYS IXFN 58N50 IXFN 61N50 Preliminary Data Sheet V DSS IXFN 58N50 500V IXFN 61N50 500V High Current Power MOSFET p ^D25 DS on 58A 61A 85 m£2 75 mû N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings v DSS T j = 25°C to 150°C 500 V v DGR

diode BY 127

Abstract: OPB706B OPB706A OPB706C QPB706B QPB706C pb706
Contextual Info: OPTEK P ro d u c t Bulletin O P B 7 0 6 J u n e 1996 Reflective Object Sensors Types OPB706A, QPB706B, QPB706C • F ea tu res A b s o lu te M axim um R a tin g s T a = 2 5 ° C u n le s s o th e rw is e noted • Phototransistor output Storage and Operating T em pe ratu re. -40° C to +85° C

UL1550

Abstract: cb85 1550LI
Contextual Info: 19-77/2 UKLAD SCALONY ANALOGOWY UL1550L SWW 1156-32 nsn 1 *0,5 / ' « 5,3 s /J U k la d sc a lo n y w o budow ie ty p u CE12 CB-85 1 — an o d a, 2 — k a to d a S c h e m a t e le k try c z n y ZASTOSOYVANIE DANE TECHNICZNE U k la d je s t p rz ez n ac zo n y do z a s ila n ia w a ra k to ro w (diod

Contextual Info: s i l ì J l l C V rsm If r m s m a xim u m va lu e fo r co n tin u o u s o p eration V rr m 120 A SEMIPACK 1 Fast Diode Modules If a v (sin. 180; T case = 85 °C; 50 Hz) 42 A V 1000 SKKD 42 F 10 SKMD 42 F 10 1200 SKKD 42 F 12 SKMD 42 F 12 SKND 42 F 12

Contextual Info: S T C 2200 S amHop Microelectronics C orp. J an 03 2005 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 85 @ V G S = 4.5V

BZY83

Abstract: DIODE BZy 83 BZY85C BZY 56 bzy85 c15 BZY83/C5V6 BZY83C BZY 100 BLY83 C5V1
Contextual Info: BZY83C, BZY83D, BZY85C, BZY85D Silicon Z-diodes Silicon Z-diodes type BZY 83 and BZY 85 are available w ith 5% tolerance C and 10% tolerance (D). BZY 83 is provided w ith a metal case 1 A 2 DIN 41871 and may be operated in free air as well as mounted on a chassis w ith a cooling fin (heat

Contextual Info: • 7020^ -f — D D D Ö D 7 5 fl4S « R H U K / L ig h t Emitting Diodes LA-101 FP S e rie s LA-101 F P Series High-Efficiency Numeric Displays £fJgTj-£[5ll/'Dimensions U n it : mm LA-101 v 'J —X tt, tz LEDiSc m 1 -f >^(25mm)T, life, H f e J S t m f e c D 4 feS5 *. r * U £ t o

esm3030dv

Abstract: transistor AC 307 MS10A
Contextual Info: ESM3030DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

ior e78996

Contextual Info: Bulletin 127106 rev. A 08/97 Inte rn ation al I ö r Rectifier T.HF SERIES POWER RECTIFIER DIODES T-Modules 40 A 70 A 85 A 110 A Features • E lectrically isolated base plate ■ Types up to 1600 V RRM ■ 3500 V RMg isolating voltage ■ S im plified m echanical designs,

TD620003FB

Abstract: td62003 td620003
Contextual Info: TOSHIBA TD62003,004FB TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62003FB, TD62004FB 7CH DARLINGTON SINK DRIVER The TD62003FB series are high-voltage, high-current d a rling to n drivers comprised o f seven NPN da rlin g to n pairs. A ll units feature integral clamp diodes fo r switching

b9v1

Contextual Info: b^E D N AUER PHILIPS/DISCRETE b b 5 3 ^ 3 1 DDEbflDb D3Q H A P X I BZX79 SERIES VOLTAGE REGULATOR DIODES Silicon planar diodes in DO-35 envelopes intended fo r use as low voltage stabilizers or voltage references. They are available in fo u r series; each series having a different tolerance rating, one series

td6204

Abstract: DARLINGTON SINK DRIVER
Contextual Info: Technical Data Silicon Monolithic Bipolar Digital Integrated Circuit TD62064BP-1/BF 4-channel High-Current Darlington Sink Driver The TD62064BP-1 and TD62064BF are high-voltage, high-current Darlington drivers composed of four NPN Darlington pairs. All units feature integral clamp diodes for switching

Contextual Info: Bulletin 127106 rev. A 08/97 International l R Rectifier T.HF SERIES T-Modules POWER RECTIFIER DIODES 40 A 70 A 85 A 110 A Features • E le c tr ic a lly Is o la te d b a s e p la te ■ T y p e s up to 1 6 0 0 V RRM ■ 3 5 0 0 V RMS Is o la tin g v o lta g e

RCA tube 83

Abstract: CLASS diode rf DETECTOR ST-12 RCA-85
Contextual Info: RCA-85 DUPLEX-DIODE TRIODE The 85 is a heater type of tube consisting of two diodes and a triode in a single bulb. It is for use as a combined detector, amplifier, and automatic-volume-control tube in radio receivers designed for its characteristics. The two diodes and the triode are

Contextual Info: Bulletin 127099 rev. A 10/97 International IÖ R Rectifier IRK.F200. SERIES MAGN-A-pak Power Modules FAST THYRISTOR/DIODEand THYRISTOR/THYRISTOR Features Fast tu rn -o ff th yristo r Fast recovery diode High surge capability E lectrically isolated baseplate