P J 85 DIOD Search Results

dual P-Channel JFET

Abstract: low noise dual P-Channel JFET SST176 diode dual jfet p-channel monolithic dual jfet transistor
Contextual Info: J/SST174 SERIES SINGLE P-CHANNEL JFET SWITCH Linear Integrated Systems FEATURES Direct Replacement For SILICONIX J/SST174 SERIES LOW ON RESISTANCE rDS on ≤ 85Ω LOW GATE OPERATING CURRENT ID(off) = 10pA 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated)

Contextual Info: SEMICONDUCTOR KDS193 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Small Package : SOT-23. E B L L ・Low Forward Voltag : VF=0.9V Typ. . 2 A H 1 P Reverse Voltage VRM 85 V VR 80 V J UNIT K RATING P N SYMBOL

Contextual Info: SEMICONDUCTOR KDS226 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Small Package : SOT-23. E B L L ・Low Forward Voltag : VF=0.9V Typ. . 2 A H 1 P Reverse Voltage VRM 85 V VR 80 V J UNIT K RATING P N SYMBOL

KDS184

Contextual Info: SEMICONDUCTOR KDS184 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Small Package : SOT-23. E B L L ・Low Forward Voltag : VF=0.9V Typ. . 2 A H 1 P Reverse Voltage VRM 85 V VR 80 V J UNIT K RATING P N SYMBOL

Contextual Info: SEMICONDUCTOR KDS193 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Small Package : SOT-23. E B L L ・Low Forward Voltag : VF=0.9V Typ. . 2 A H 1 P Reverse Voltage VRM 85 V VR 80 V J UNIT K RATING P N SYMBOL

Contextual Info: SEMICONDUCTOR KDS181 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Small Package : SOT-23. E B L L ・Low Forward Voltag : VF=0.92V Typ. . 2 A H 1 P Reverse Voltage VRM 85 V VR 80 V J UNIT K RATING P N SYMBOL

T930S

Abstract: A358S A438S T128F T318F T698F EUPEC tt 104 EUPEC tt 25 N 12 ST178 T510S
Contextual Info: S2E J> EUPEC aHGBET? 0G0057Q 45Ô M U P E C A 1250 S ^ 2 * 5 '2 - 1 600 lÿpenreihe/Type range Elektrische Eigenschaften Höchstzulässige Werte 1000 1100 1200 1300* —0* Electrical properties Vrrm tp= 1 «S 'rfTj ’ "/j Itavm tc = 85°C tc = 70°C

CNW85

Abstract: optocoupler ic MBB037 Optocoupler 601 philips 23 BS415 BS7002 CNW84 VDE0884
Contextual Info: PH ILIP S 41E INTERNATIONAL 7iiQôab D oa3aHsa b m p h i n 7 " - v / - 8 3 P ro d u c t s p e c ific a tio n P h ilip s S e m ico n d u cto rs J C N W 8 4/C N W 85 H eavy duty o p to co u p lers FEATURES • Minimum 2 mm isolation thickness between emitter and

LNJ816C87RA

Contextual Info: Checked Approved Designed DEVELOPMENT SPECIFICATION P/N TEM PORARY : L N J 8 1 6 C 8 7 R A Soft Orange Light Emitting Diode A P P L I CA T I ON Indication M A T E R I A L InGaAIP O U At tached T L I N E A B S O L U T E M A X I R A T M I U N M G Topr Tstg -30-+85

Contextual Info: Approved Des igned Checked DEVELOPMENT SPECIFICATION TEMPORARY P / N : LN J 4 1 8 C 8 4 RA 1 T Amber Light Emitting Diode A P P L I C A T I O N Indicatiors M A L InGaAlP O U E At t a c h e d T E T R I L I A N A B S O L U T E * 1, lfdc Topr -30-+85 M A X I

B585

Abstract: rs tube
Contextual Info: 6DT4 - TUNO-SOL DIODE DIODE FO R D A M P E R S E R V IC E IN CO LO R T .V . R E C E IV E R S A N Y MOUNTING POSITION G LASS BU LB J E D E C 4CG S H O R T IN T E R M E D IA T E S H E L L O C T A L 5 P IN B A S E B5-85 O U T L IN E D R A W IN G J E D E C 9-44

Contextual Info: 3.3V CMOS SINGLE 2-INPUT POSITIVE-NAND GATE WITH 5 VOLT TOLERANT I/O J m ïï., D E S C R IP TIO N : FE A T U R E S : - 0.5 MICRON CMOS Technology - ESD > 2000V per MIL-STD-883, Method 3015; - 0.65mm pitch P S O P package - Extended commercial range of - 40° C to +85° C

SIOV-B80K460

Abstract: Varistor SIOV-B80K460 SIOV-B40K420 SIOV-B40K440 SIOV-B25K420 SIOV-B60K550 Q69X4357 Q69X3311
Contextual Info: Block Varistors Maximum ratings f A = 85 C Type Ordering code Opera ing voltag ^RM S ^DC Surge current Energy absorption Power dissipation Viax W vvmax 1 max p 8/20 (.is (2 ms) V V A J w SIOV-B25K420 SIOV-B32K420 SIOV-B40K420 SIOV-B60K420 SIOV-B80K420 Q69X3306

Contextual Info: OPTEK P roduct B ulletin OPB804 J u ly 1996 Slotted Optical Switch Type OPB8Q4 IL* • I BOTTOM YIEH Features A bso lu te Maxim um R atings Ta = 25° C unless otherwise noted • • • • Storage and Operating Temperature. -40° C to +85° C

1xys

Contextual Info: □IXYS IXFN 58N50 IXFN 61N50 Preliminary Data Sheet V DSS IXFN 58N50 500V IXFN 61N50 500V High Current Power MOSFET p ^D25 DS on 58A 61A 85 m£2 75 mû N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings v DSS T j = 25°C to 150°C 500 V v DGR

diode BY 127

Abstract: OPB706B OPB706A OPB706C QPB706B QPB706C pb706
Contextual Info: OPTEK P ro d u c t Bulletin O P B 7 0 6 J u n e 1996 Reflective Object Sensors Types OPB706A, QPB706B, QPB706C • F ea tu res A b s o lu te M axim um R a tin g s T a = 2 5 ° C u n le s s o th e rw is e noted • Phototransistor output Storage and Operating T em pe ratu re. -40° C to +85° C

UL1550

Abstract: cb85 1550LI
Contextual Info: 19-77/2 UKLAD SCALONY ANALOGOWY UL1550L SWW 1156-32 nsn 1 *0,5 / ' « 5,3 s /J U k la d sc a lo n y w o budow ie ty p u CE12 CB-85 1 — an o d a, 2 — k a to d a S c h e m a t e le k try c z n y ZASTOSOYVANIE DANE TECHNICZNE U k la d je s t p rz ez n ac zo n y do z a s ila n ia w a ra k to ro w (diod

Contextual Info: s i l ì J l l C V rsm If r m s m a xim u m va lu e fo r co n tin u o u s o p eration V rr m 120 A SEMIPACK 1 Fast Diode Modules If a v (sin. 180; T case = 85 °C; 50 Hz) 42 A V 1000 SKKD 42 F 10 SKMD 42 F 10 1200 SKKD 42 F 12 SKMD 42 F 12 SKND 42 F 12

Contextual Info: S T C 2200 S amHop Microelectronics C orp. J an 03 2005 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 85 @ V G S = 4.5V

Contextual Info: Checked Approved Designed / DEVELOPMENT P / N : L N J In d ic a tio n s M A GaP O U E T R L I I A L N E At t ached A B S O L U T E M A X R A T I I G Topr Tstg "30 — +85 -40-+100 LFDC M U M N TEMPORARY 3 1 8 C 8 4 R A 1 Green L ig h t E m it t in g Diode

BZY85C

Abstract: DIODE BZy 83 bzy85 c15 bzy85 BZY85C15 BZY85/C15 C8V2 DIODE BZY83/C5V6 C24 06 85 d8v2
Contextual Info: BZY83C, BZY83D, BZY85C, BZY85D Silicon Z-diodes Silicon Z-diodes type BZY 83 and BZY 85 are available w ith 5% tolerance C and 10% tolerance (D). BZY 83 is provided w ith a metal case 1 A 2 DIN 41871 and may be operated in free air as well as mounted on a chassis w ith a cooling fin (heat

BZY83

Abstract: DIODE BZy 83 BZY85C BZY 56 bzy85 c15 BZY83/C5V6 BZY83C BZY 100 BLY83 C5V1
Contextual Info: BZY83C, BZY83D, BZY85C, BZY85D Silicon Z-diodes Silicon Z-diodes type BZY 83 and BZY 85 are available w ith 5% tolerance C and 10% tolerance (D). BZY 83 is provided w ith a metal case 1 A 2 DIN 41871 and may be operated in free air as well as mounted on a chassis w ith a cooling fin (heat

Contextual Info: • 7020^ -f — D D D Ö D 7 5 fl4S « R H U K / L ig h t Emitting Diodes LA-101 FP S e rie s LA-101 F P Series High-Efficiency Numeric Displays £fJgTj-£[5ll/'Dimensions U n it : mm LA-101 v 'J —X tt, tz LEDiSc m 1 -f >^(25mm)T, life, H f e J S t m f e c D 4 feS5 *. r * U £ t o

diode sg 5 ts

Contextual Info: Thyristor-Dioden-Module für l-Umrichter Thyristor-diode-modules for current source inverters Modules thyristor-diode pour convertisseurs à circuit intermédiaire à courant continu Typ V drm Type V rrm V rrm Thyr (Diode) V V / i 2d t Itrmsm Itsm A lïAVM/tc