P CHANNEL ULTRA LOW GATE CHARGE Search Results

IRF5820

Abstract: SI3443DV IRF5800 IRF5850
Contextual Info: PD - 93947A IRF5850 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier

IRF5850

Contextual Info: PD - 93947 IRF5850 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier

Contextual Info: Sept 2004 AO4425, AO4425L Green Product P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4425 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable

IRF5805

Abstract: SI3443DV TSOP6 Marking Code 17 IRF5820
Contextual Info: PD -94029A IRF5805 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max ID -30V 0.098@VGS = -10V 0.165@VGS = -4.5V -3.8A Description These P-channel MOSFETs from International Rectifier

Contextual Info: PD -94029A IRF5805 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max ID -30V 0.098@VGS = -10V 0.165@VGS = -4.5V -3.0A Description These P-channel MOSFETs from International Rectifier

Contextual Info: PD - 95503B IRF5804PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing

power MOSFET IRF data

Abstract: IRF Power MOSFET code marking IRF5850PBF mosfet p-channel 10A irf IRF5800 IRF5801 IRF5850 IRF5852 mosfet irf p-channel irf 2010
Contextual Info: PD - 95506 IRF5850PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier

Contextual Info: PD-95262B IRF5803PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing

IRF5805

Abstract: marking bad sot-23 IRF580
Contextual Info: PD -94029 IRF5805 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max ID -30V 0.098@VGS = -10V 0.165@VGS = -4.5V -3.8A Description These P-channel MOSFETs from International Rectifier

Contextual Info: PD-95262B IRF5803PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free Description D These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing

Contextual Info: AON7401 30V P-Channel MOSFET General Description Product Summary The AON7401 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.

Contextual Info: Rev 3: Nov 2004 AO4413, AO4413L Green Product P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4413 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable

AO4413

Contextual Info: AO4413 30V P-Channel MOSFET General Description Product Summary The AO4413 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.

AO4407L

Contextual Info: AO4407L 30V P-Channel MOSFET General Description Features The AO4407L uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.

Contextual Info: AON7403 30V P-Channel MOSFET General Description Product Summary The AON7403 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.

AON7401

Contextual Info: AON7401 30V P-Channel MOSFET General Description Features The AON7401 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.

30V P-Channel MOSFET

Contextual Info: AON7403 30V P-Channel MOSFET General Description Features The AON7403 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.

Contextual Info: Rev 3: August 2004 AO4423, AO4423L Green Product P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4423 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable

AO4423

Contextual Info: AO4423 30V P-Channel MOSFET General Description Product Summary The AO4423 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.

Contextual Info: AON7401 30V P-Channel MOSFET General Description Product Summary The AON7401 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.

IRF9952

Contextual Info: PD - 9.1561 A International IG R Rectifier IRF9952 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated N-CHANNEL M ÜSF ET

Contextual Info: ACE7401B P-Channel Enhancement Mode Field Effect Transistor Description The ACE7401B uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.

AO4435

Abstract: E1-0100
Contextual Info: AO4435 30V P-Channel MOSFET General Description Product Summary The AO4435 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.

AON7403

Contextual Info: AON7403 30V P-Channel MOSFET General Description Features The AON7403 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.