P CHANNEL MOSFET TO220 Search Results
P CHANNEL MOSFET TO220 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| ICL7667MJA |
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ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 |
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| ICL7667MJA/883B |
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ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA) |
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| AM9513ADIB |
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AM9513 - Programmable Timer, 5 Timers, MOS, CDIP40 |
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| CA3130AT/B |
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CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output |
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| CA3130T |
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CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output |
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P CHANNEL MOSFET TO220 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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IRF95
Abstract: IRF9510 p channel mosfet 100v TA17541
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IRF95 O220AB IRF9510 IRF95 IRF9510 p channel mosfet 100v TA17541 | |
P-Channel mosfet 400v to220
Abstract: FQP3P50 P-Channel mosfet 400v 10 A to220
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FQP3P50 FQP3P50 O-220 P-Channel mosfet 400v to220 P-Channel mosfet 400v 10 A to220 | |
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Contextual Info: FQPF15P12 P-Channel QFET MOSFET -120 V, -15 A, 0.2 Ω Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to |
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FQPF15P12 | |
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Contextual Info: FQPF5P20 P-Channel QFET MOSFET -200 V, -3.4 A, 1.4 Ω Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce |
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FQPF5P20 O-220F | |
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Contextual Info: FQP9P25 P-Channel QFET MOSFET -250 V, -9.4 A, 620 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to |
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FQP9P25 O-220 | |
diode 842Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF5305 Preliminary POWER MOSFET -31A, -55V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UF5305 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. |
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UF5305 UF5305 UF5305L-TA3-T UF5305G-TA3-T UF5305L-TN3-T UF5305G-TN3-T UF5305L-TN3-R UF5305G-TN3-R QW-R502-842 diode 842 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF9530 Preliminary POWER MOSFET -14A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UF9530 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. |
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UF9530 -100V UF9530 -100V, UF9530L-TA3-T UF9530G-TA3-T UF9530L-TM3-T UF9530G-TM3-T UF9530L-TN3-T | |
FQP17P06Contextual Info: FQP17P06 P-Channel QFET MOSFET - 60 V, - 17 A, 120 m Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce |
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FQP17P06 FQP17P06 | |
FQPF11P06
Abstract: P-CHANNEL MOSFET
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FQPF11P06 FQPF11P06 P-CHANNEL MOSFET | |
fqpf27p06Contextual Info: FQPF27P06 P-Channel QFET MOSFET -60 V, -17 A, 26 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to |
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FQPF27P06 FQPF27P06 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF9Z34 Preliminary POWER MOSFET -17A, -55V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UF9Z34 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. |
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UF9Z34 UF9Z34 O-220 UF9Z34L-TA3-T UF9Z34G-TA3-T QW-R502-843 | |
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Contextual Info: FQP3P20 P-Channel QFET MOSFET -200 V, -2.8 A, 2.7 Ω Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state |
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FQP3P20 O-220 FQP3P20 | |
fqpf15p12
Abstract: FQP15P12 P-CHANNEL MOSFET fqpf15
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FQP15P12 FQPF15P12 FQP15P12/FQPF15P12 P-CHANNEL MOSFET fqpf15 | |
FQPF22N10Contextual Info: FQPF22P10 P-Channel QFET MOSFET -100 V, -13.2 A, 125 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to |
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FQPF22N10 FQPF22P10 FQPF22P10 | |
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Contextual Info: FQP3P50 P-Channel QFET MOSFET -500 V, -2.7 A, 4.9 Ω Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state |
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FQP3P50 O-220 FQP3P50 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF9Z34 POWER MOSFET -17A, -55V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UF9Z34 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. |
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UF9Z34 UF9Z34 O-220 UF9Z34L-TA3-T UF9Z34G-TA3-T QW-R502-843 | |
fqp27p06Contextual Info: FQP27P06 P-Channel QFET MOSFET - 60 V, - 27 A, 70 m Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce |
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FQP27P06 FQP27P06 | |
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Contextual Info: FQPF47P06 P-Channel QFET MOSFET -60 V, -30 A, 26 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to |
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FQPF47P06 FQPF47P06 | |
FQP47P06Contextual Info: FQP47P06 P-Channel QFET MOSFET - 60 V, - 47 A, 26 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconducto®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to |
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FQP47P06 FQP47P06 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF5210 POWER MOSFET -40A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UF5210 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. |
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UF5210 -100V UF5210 O-220 UF5210L-TA3-T UF5210G-TA3-T QW-R502-845 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF9520S Preliminary POWER MOSFET -6.8A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UF9520S is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. |
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UF9520S -100V UF9520S O-220F1 UF9520SL-TF1-T UF9520SG-TF1-T QW-R502-892 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT23P09 Preliminary POWER MOSFET -23A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT23P09 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. |
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UT23P09 -100V UT23P09 UT23P09L-TA3-T UT23P09G-TA3-T O-220 QW-R502-844 | |
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Contextual Info: FQPF47P06 / FQPF47P06YDTU P-Channel QFET MOSFET -60 V, -30 A, 26 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to |
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FQPF47P06 FQPF47P06YDTU | |
FQP17P10Contextual Info: FQP17P10 P-Channel QFET MOSFET - 100 V, - 16.5 A, 190 m Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce |
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FQP17P10 FQP17P10 | |