P CHANNEL MOSFET 500MA SWITCHING Search Results

AAT4601

Abstract: AAT4625 AAT4626 AAT4626IAS-1-T1 AAT4626IAS-T1
Contextual Info: AAT4626 USB Dual-Channel Power Switch SmartSwitch General Description Features The AAT4626 SmartSwitch is part of AnalogicTech's Application Specific Power MOSFET™ ASPM™ product family. It is a dual-channel 500mA currentlimited P-channel MOSFET power switch designed

AAT4626IAS-1-T1

Abstract: AAT4626-1 4626 AAT4626IHS-1-T1 AAT4601 AAT4625 AAT4626 AAT4626IAS-1-B1 AAT4626IAS-B1 1uF 450V power capacitor
Contextual Info: AAT4626 USB Dual-Channel Power Switch SmartSwitch General Description Features The AAT4626 SmartSwitch™ is part of AnalogicTech's Application Specific Power MOSFET™ ASPM™ product family. It is a dualchannel 500mA current-limited P-channel MOSFET

4626

Abstract: AAT4601 AAT4625 AAT4626 AAT4626IAS-1-T1 AAT4626IAS-T1
Contextual Info: AAT4626 USB Dual-Channel Power Switch SmartSwitch General Description Features The AAT4626 SmartSwitch™ is part of AnalogicTech's Application Specific Power MOSFET™ ASPM™ product family. It is a dualchannel 500mA current-limited P-channel MOSFET

P-CHANNEL SC89

Abstract: FDY4000CZ SC89
Contextual Info: FDY4000CZ Complementary N & P-Channel PowerTrench MOSFET Features General Description „ Max rDS on 0.7: at VGS = 4.5V, ID = 600mA „ Max rDS(on) 0.85: at VGS = 2.5V, ID = 500mA This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power

Contextual Info: FDY4000CZ Complementary N & P-Channel PowerTrench MOSFET General Description Features „ Max rDS on 0.7: at VGS = 4.5V, ID = 600mA „ Max rDS(on) 0.85: at VGS = 2.5V, ID = 500mA This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power

FDY4000CZ

Contextual Info: FDY4000CZ Complementary N & P-Channel PowerTrench MOSFET Features General Description „ Max rDS on 0.7: at VGS = 4.5V, ID = 600mA „ Max rDS(on) 0.85: at VGS = 2.5V, ID = 500mA This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power

201946A

Contextual Info: DATA SHEET AAT4626 USB Dual-Channel Power Switch General Description Features The AAT4626 SmartSwitch is part of Skyworks' Application Specific Power MOSFET ASPM product family. It is a dual-channel 500mA current-limited P-channel MOSFET power switch designed for high-side load switching applications. This switch operates with inputs ranging from

FDY4000CZ

Abstract: SC89
Contextual Info: FDY4000CZ Complementary N & P-Channel PowerTrench MOSFET tm Features General Description Q1: „ Max rDS on = 0.85Ω at VGS = 2.5V, ID = 500mA This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS= 2.5V and

POWER TRANSISTORS 10A 400v pnp

Abstract: full wave bridge rectifier ic FULL WAVE mosfet RECTIFIER CIRCUITS schottky 400v CMLDM7003 CMLM8205 P-Channel mosfet 400v CTLS5064-M532 CBRHDSH2-100 Schottky Diode 40V 5A bridge
Contextual Info: Latest Products Multi Discrete Module CMLM8205 50V, 280mA, P-Channel MOSFET and 40V, 500mA Schottky Diode Features: Benefits: Applications: MOSFET • rDS on (3.0Ω) • VGS(th) (1.0V) • Space saving, multi-discrete device The CMLM8205 is a Multi Discrete Module consisting of a single

Contextual Info: DMP21D5UFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION V BR DSS Features and Benefits ID RDS(on) max TA = 25°C 1.0Ω @ VGS = -4.5V -700mA 2.0Ω @ VGS = -1.8V -500mA -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

XC6377

Abstract: XC6377A503SR XC6377A303SR XC6376A333
Contextual Info: XC6376/77 Series PWM Controlled, PWM/PFM Switchable Step-down DC/DC Converters ◆ P Channel Power MOSFET Built-in ◆ Maximum Output Current: 500mA ◆ Output Voltage Range: 1.5~6.0V ◆ Oscillator Frequency: 300kHz ◆ Maximum Duty Ratio: 100% ◆ High Efficiency: 95%

diode marking 141c

Abstract: DMP21D5UFB4
Contextual Info: DMP21D5UFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION V BR DSS Features and Benefits • • • • • • • • • • ID RDS(on) max TA = 25°C 1.0Ω @ VGS = -4.5V -700mA 1.5Ω @ VGS = -2.5V -600mA 2.0Ω @ VGS = -1.8V -500mA

DMP21D5UFD

Contextual Info: DMP21D5UFD P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION V BR DSS Features RDS(ON) max -20V 1.0Ω @ VGS = -4.5V -600mA 1.5Ω @ VGS = -2.5V -500mA 2.0Ω @ VGS = -1.8V • • • • • • • • ID TA = +25°C Package X1-DFN1212-3

15A ZENER DIODE

Contextual Info: UC1707 UC2707 UC3707 y UNITRODE Dual Channel Power Driver FEATURES DESCRIPTION • Two independent Drivers The UC1707 family of power drivers is made with a high-speed Schottky process to interface between low-level control functions and high-power switching devices - particularly power MOSFETs. These devices contain

12V 10A BJT

Abstract: Logic Level Gate Drive mosfet SUM202MN SUM202 BJT IC Vce power BJT PNP BJT pnp 45V Drive Base BJT Low Capacitance bjt BJT IC Vce 5v
Contextual Info: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and 8 board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated

Contextual Info: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and 8 board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated

Contextual Info: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and 8 board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated

Contextual Info: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated

usb pre amplifier circuit diagram

Abstract: ADM1072 ADM1072ARQ RQ-16
Contextual Info: = Dual, USB 2.0 Full/Standby Power Controller with Supply Steering Preliminary Technical Data ADM1072 GENERAL DESCRIPTION FEATURES 500mA Load Current 100mA in Standby Mode 135m⍀ On Resistance Switchable Current Limit 50µA Typical Quiescent Current 10nA Typical Shutdown Current

usb pre amplifier circuit diagram

Abstract: RQ-16 ADM1072 ADM1072ARQ
Contextual Info: PRELIMINARY TECHNICAL DATA = Dual, USB 2.0 Full/Standby Power Controller with Supply Steering Preliminary Technical Data ADM1072 GENERAL DESCRIPTION FEATURES 500mA Load Current 100mA in Standby Mode 135m⍀ On Resistance Switchable Current Limit 50µA Typical Quiescent Current

mos short circuit protection schematic diagram

Abstract: usb port amplifier circuit diagram AN1441 ST7263 ST890 St72638 power supplys mosfet short circuit protection schematic diagram SCT2000
Contextual Info: AN1441 APPLICATION NOTE ST890: A HIGH SIDE SWITCH FOR PCMCIA AND USB APPLICATIONS A. Randazzo 1. INTRODUCTION ST890 is a low voltage, P-Channel MOSFET power switch, intended for high side load switching applications. Its main applications are PCMCIA slots, Portable Equipment and Access bus slots. ST890

2N7002K

Contextual Info: SEMICONDUCTOR 2N7002K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES ・ESD Protected 2000V. E B L L ・High density cell design for low RDS ON . D ・Voltage controlled small signal switch. 2 A 3 G ・Rugged and reliable.

82801AA

Abstract: MIC2010 MIC2010-1CQS MIC2010-1PCQS MIC2010-2CQS MIC2070
Contextual Info: MIC2010/2070 Micrel MIC2010/MIC2070 USB Power Controller Advance Information General Description Features The MIC2010 is a dual channel USB power switch designed to support the power distribution requirements for USB Wakeup from the ACPI S3 state. The MIC2010 will directly

C 3619

Abstract: tps 3619 VLF5014ST package LTC3619 LTC3619B LTC3619E LTC3619EDD LTC3619EMSE LTC3619I LTC3619IDD
Contextual Info: LTC3619 400mA/800mA Synchronous Step-Down DC/DC with Average Input Current Limit DESCRIPTION FEATURES n n n n n n n n n n n n n n Programmable Average Input Current Limit: ±5% Accuracy Dual Step-Down Outputs: Up to 96% Efficiency Low Ripple <25mVP-P Burst Mode Operation: