P CHANNEL MOSFET 500MA Search Results

VEC2605

Contextual Info: VEC2605 Ordering number : ENN8197 P-Channel and N-Channel Silicon MOSFET VEC2605 General-Purpose Switching Device Applications Features • • • • Best suited for DC/DC converters. The VEC2605 incorporates a P-channel MOSFET and an N-channel MOSFET that feature low ON-resistance

CMLM8205

Abstract: PB CMLM8205 mosfet 4812 marking 34 diode SCHOTTKY sot-563 MOSFET D1 P-Channel Enhancement MOSFET module 4812 mosfet "Schottky Diode" Schottky Diode power mosfet 500 A
Contextual Info: Product Brief CMLM8205 Multi Discrete Module 50V, 280mA, P-Channel MOSFET and 40V, 500mA Schottky Diode SOT-563 Typical Electrical Characteristic: Description: MOSFET: The CENTRAL SEMICONDUCTOR CMLM8205 is a Multi Discrete Module consisting of a single P-Channel Enhancement Mode MOSFET

ENN8206

Abstract: CPH5810 MCH3312
Contextual Info: CPH5810 Ordering number : ENN8206 CPH5810 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS001)

7382

Abstract: CPH5820 D2503 MCH3308 SBS006M
Contextual Info: Ordering number : ENN7382 CPH5820 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5820 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3308 and a Schottky Barrier Diode (SBS006M) 2171

Contextual Info: Ordering number : ENN6980 CPH5804 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5804 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3312 and a Schottky Barrier Diode (SBS006M) 2171

TA-3176

Abstract: marking QB MCH3308 MCH5802 SBS006M
Contextual Info: Ordering number : ENN6961 MCH5802 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5802 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3308 and a Schottky Barrier Diode (SBS006M) 2195

MCH3312

Abstract: CPH5854 SB1003M3 A05166 marking YG
Contextual Info: CPH5854 Ordering number : ENA0516 SANYO Semiconductors DATA SHEET CPH5854 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type containing a P-Channel MOSFET MCH3312 and a Schottky Barrier Diode (SB1003M3),

Contextual Info: Ordering number: ENN6980 | MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5804 /SANYO, DC / DC Converter Applications Features Package Dimensions • Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3312 and a Schottky Barrier Diode (SBS006M) 2171

diode N1004

Abstract: CPH5822 MCH3312 N1004 SBS010M
Contextual Info: CPH5822 Ordering number : ENN7702A CPH5822 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • DC / DC converter applications. Composite type with a P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS010M)

Contextual Info: SCH2811 Ordering number : ENA0440 SCH2811 Features • • • MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET and a Schottky barrier diode contained in one package

MCH3307

Abstract: SBS004 ENN8235 2171A
Contextual Info: CPH5838 Ordering number : ENN8235 CPH5838 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • DC / DC converters. Composite type with a P-Channel Sillicon MOSFET MCH3307 and a Schottky Barrier Diode (SBS004)

Contextual Info: CPH5822 Ordering number : ENN7702 CPH5822 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General Purpose Switching Device Features • • DC / DC converter applications. Composite type with a P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS010M)

82306

Abstract: MCH3312 CPH5852 SB1003M3
Contextual Info: CPH5852 Ordering number : ENA0336 SANYO Semiconductors DATA SHEET CPH5852 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type containing a P-Channel MOSFET MCH3312 and a Schottky Barrier Diode (SB1003M3),

CPH5821

Abstract: MCH3312 SBS004 marking qx
Contextual Info: CPH5821 Ordering number : ENN7701 CPH5821 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • DC / DC converter applications. Composite type with a P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS004)

MCH3307

Abstract: MCH5836 SS10015M
Contextual Info: MCH5836 Ordering number : ENA0780 SANYO Semiconductors DATA SHEET MCH5836 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an P-channel silicon MOSFET MCH3307 and a schottky barrier diode (SS10015M)

P-Channel MOSFET code 1A

Abstract: P-channel Trench MOSFET Bi-Directional P-Channel mosfet SPC6801 SPC6801ST6RG 6P marking P-channel MOSFET VGS -25V
Contextual Info: SPC6801 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC6801combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an TSOP-6P package. The Trench MOSFET is the P-Channel enhancement mode power field effect

Schottky Diode 20V 5A

Abstract: Bi-Directional P-Channel mosfet IR P-Channel mosfet SPC6801 SPC6801ST6RG P-Channel MOSFET code 1A
Contextual Info: SPC6801 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC6801combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an TSOP-6P package. The Trench MOSFET is the P-Channel enhancement mode power field effect

MCH6627

Contextual Info: MCH6627 Ordering number : ENN8000 MCH6627 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6627 incorporates a N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching, thereby enabling high-density mounting.

Contextual Info: MCH6627 Ordering number : ENN8000 N-Channel and P-Channel Silicon MOSFETs MCH6627 General-Purpose Switching Device Applications Features • • • The MCH6627 incorporates a N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching, thereby enabling high-density mounting.

CPH5605

Contextual Info: Ordering number:ENN6441 N-Channel and P-Channel Silicon MOSFETs CPH5605 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2168 [CPH5605] 2.9 5 4 0.15 3 2.8 0.05 0.6 1.6 0.6 • The CPH5605 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON

it-007

Abstract: CPH5605 IT01080
Contextual Info: Ordering number:ENN6441 N-Channel and P-Channel Silicon MOSFETs CPH5605 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2168 [CPH5605] 2.9 5 4 0.15 3 2.8 0.05 0.6 1.6 0.6 • The CPH5605 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON

82306

Abstract: SCH2811
Contextual Info: SCH2811 Ordering number : ENA0440 SANYO Semiconductors DATA SHEET SCH2811 Features • • • MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET and a Schottky barrier diode contained in one package

AAT4601

Abstract: AAT4625 AAT4626 AAT4626IAS-1-T1 AAT4626IAS-T1
Contextual Info: AAT4626 USB Dual-Channel Power Switch SmartSwitch General Description Features The AAT4626 SmartSwitch is part of AnalogicTech's Application Specific Power MOSFET™ ASPM™ product family. It is a dual-channel 500mA currentlimited P-channel MOSFET power switch designed

MCH6626

Contextual Info: MCH6626 Ordering number : ENN7918 N-Channel and P-Channel Silicon MOSFETs MCH6626 General-Purpose Switching Device Applications unit : mm 2173A [MCH6626] 0.3 4 0.25 2.1 • The MCH6626 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ONresistance and high-speed switching, thereby enabling