P CHANNEL MOSFET 10A Search Results

Diode PJ 1266 IV

Abstract: LTC1267
Contextual Info: /T liriÇ A B LTC1266 LTC 12 6 6 -3 ,3/LTCI 266 -5 TECHNOLOGY Synchronous Regulator Controller for N- or P-Channel MOSFETs FCRTURCS DCSCRIPTIOfl • Ultra-High Efficiency: Over 95% Possible ■ Drives N-Channel MOSFET for High Current or P-Channel MOSFET for Low Dropout

Contextual Info: IRFP9140 Semiconductor April 1999 Data Sheet -19A, -100V, 0.200 Ohm, P-Channel Power MOSFET This is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel

IRF5820

Abstract: SI3443DV IRF5800 IRF5850
Contextual Info: PD - 93947A IRF5850 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier

power MOSFET IRF data

Abstract: IRF Power MOSFET code marking IRF5850PBF mosfet p-channel 10A irf IRF5800 IRF5801 IRF5850 IRF5852 mosfet irf p-channel irf 2010
Contextual Info: PD - 95506 IRF5850PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier

IRF7425

Abstract: MS-012AA
Contextual Info: PD- 94022 IRF7425 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel VDSS ID 8.2@VGS = -4.5V 13@VGS = -2.5V -15A -13A 20V Description These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing

AN-994

Abstract: IRF7309 P-channel HEXFET Power MOSFET
Contextual Info: PD - 9.1243B IRF7309 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2

IRFP9140

Abstract: T0-247 TA17521
Contextual Info: IRFP9140 Data Sheet July 1999 19A, 100V, 0.200 Ohm, P-Channel Power MOSFET This is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel enhancement mode silicon gate power field effect transistor

AN-994

Abstract: IRF7107
Contextual Info: PD - 9.1099B IRF7107 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 7 3 6 4 5 N-Ch

2N7236U

Abstract: smd 2f IRFN9140 JANTX2N7236U JANTXV2N7236U
Contextual Info: PD-91553C IRFN9140 JANTX2N7236U JANTXV2N7236U HEXFET POWER MOSFET [REF:MIL-PRF-19500/595] P - CHANNEL Ω MOSFET -100 Volt, 0.20Ω Product Summary ® HEXFET power MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry

IRFM9140

Abstract: JANTX2N7236 JANTXV2N7236
Contextual Info: PD - 90495E POWER MOSFET THRU-HOLE TO-254AA IRFM9140 JANTX2N7236 JANTXV2N7236 REF:MIL-PRF-19500/595 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM9140 RDS(on) I D 0.20Ω -18A HEXFET® MOSFET technology is the key to International

irf 640

Abstract: IRF 640 mosfet IRF P CHANNEL MOSFET 10A 100V SEC IRF 640 TO-257AA IRFY9140C IRFY9140CM
Contextual Info: PD - 91294D POWER MOSFET THRU-HOLE TO-257AA IRFY9140C, IRFY9140CM 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID IRFY9140C 0.20 Ω -15.8A Eyelets Ceramic IRFY9140CM 0.20 Ω -15.8A Ceramic HEXFET® MOSFET technology is the key to International

IRFY9240C

Abstract: IRFY9240CM U 94a
Contextual Info: PD - 91295B POWER MOSFET THRU-HOLE TO-257AA IRFY9240C,IRFY9240CM 200V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number Rds(on) Id Eyelets IRFY9240C 0.51 Ω -9.4A Ceramic IRFY9240CM 0.51 Ω -9.4A Ceramic HEXFET® MOSFET technology is the key to International

3020 transistor

Abstract: 4707 N Channel MOSFETs MPM3002 MPM3012 P channel MOSFET 10A schematic P-channel MOSFET 100V, 10 Amps p-channel power mosfet 14A S 170 MOSFET TRANSISTOR P-channel MOSFET 100V, 20 Amps
Contextual Info: ISO 9001 CERTIFIED BY DSCC M.S. KENNEDY CORP. H-BRIDGE MOSFET POWER MODULE 3020 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: • • • • • • Pin Compatible with MPM3002 and MPM3012 P and N Channel MOSFETs for Ease of Drive N Channel Current Sensing MOSFET for Lossless Sensing

74248

Abstract: MARKING 66b Si4941EDY
Contextual Info: New Product Si4941EDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.021 at VGS = - 10 V - 10a 0.031 at VGS = - 4.5 V - 10a • TrenchFET Power MOSFET • ESD Protection: 2500 V Qg (Typ) RoHS

IRF7314Q

Contextual Info: PD -93945A IRF7314Q HEXFET Power MOSFET Typical Applications • Anti-lock Braking Systems ABS • Electronic Fuel Injection • Air bag Benefits • Advanced Process Technology • Dual P-Channel MOSFET • Ultra Low On-Resistance • 175°C Operating Temperature

AUIRF9Z34

Abstract: 290A
Contextual Info: PD - 97627 AUTOMOTIVE GRADE AUIRF9Z34N HEXFET Power MOSFET Features l l l l l l l l l Advanced Planar Technology P-Channel MOSFET Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax

IRHE9130

Abstract: IRHE93130 JANSF2N7389U JANSR2N7389U LCC-18
Contextual Info: PD - 90881C IRHE9130 100V, P-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-18 REF: MIL-PRF-19500/630 RAD-Hard HEXFET MOSFET TECHNOLOGY Product Summary Part Number Radiation Level IRHE9130 100K Rads (Si) RDS(on) 0.30Ω ID -6.5A QPL Part Number

marking codes transistors SSs

Abstract: AP9578GP
Contextual Info: AP9578GS/P RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS -60V RDS ON 160mΩ ID G -10A S Description The Advanced Power MOSFETs from APEC provide the designer with

Contextual Info: PD-96017 IRF7756PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel Lead-Free VDSS RDS(on) max ID -12V 0.040@VGS = -4.5V 0.058@VGS = -2.5V ±4.3A 0.087@VGS = -1.8V

marking t12 sot-23

Abstract: EIA-541 IRF6100 4.5v to 100v input regulator
Contextual Info: PD - 93930B IRF6100 HEXFET Power MOSFET l l l l l l Ultra Low RDS on per Footprint Area Low Thermal Resistance P-Channel MOSFET One-third Footprint of SOT-23 Super Low Profile (<.8mm) Available Tested on Tape & Reel VDSS RDS(on) max ID -20V 0.065Ω@VGS = -4.5V

EN4744

Abstract: 2SJ255
Contextual Info: Ordering number:EN4744 P-Channel Silicon MOSFET 2SJ255 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating easy mounting. unit:mm 2063A

812-032

Abstract: EIA-541 IRF6100 8362A 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD - 93930 PROVISIONAL IRF6100 HEXFET Power MOSFET l l l l l l Ultra Low RDS on per Footprint Area Low Thermal Resistance P-Channel MOSFET One-third Footprint of SOT-23 Super Low Profile (<.8mm) Available Tested on Tape & Reel VDSS RDS(on) max ID -20V 0.065Ω@VGS = -4.5V

Contextual Info: PD-96020 IRF7754PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel Lead-Free VDSS RDS(on) max ID -12V 25mΩ@VGS = -4.5V 34mΩ@VGS = -2.5V -5.4A 49mΩ@VGS = -1.8V

irlml2502

Abstract: IRLML2502 G IRLML5103 IRLML5103 -30V
Contextual Info: PD - 91260E IRLML5103 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = -30V G RDS(on) = 0.60Ω S Description Fifth Generation HEXFETs from International Rectifier