P CHANNEL LOW GATE CHARGE STRIPFET Search Results

P CHANNEL LOW GATE CHARGE STRIPFET Result Highlights (5)

Part	Manufacturer	Description	Download
MYC0409-NA-EVM	Murata Manufacturing Co Ltd	72W, Charge Pump Module, non-isolated DC/DC Converter, Evaluation board	PDF
PQU650-12P	Murata Manufacturing Co Ltd	AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P	PDF
NFMJMPL226R0G5D	Murata Manufacturing Co Ltd	Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose	PDF
NFMJMPC156R0G3D	Murata Manufacturing Co Ltd	Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose	PDF
NFM31PC276D0E3L	Murata Manufacturing Co Ltd	Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose	PDF

P CHANNEL LOW GATE CHARGE STRIPFET Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: STRH50P6FSY3 P-channel 60V - 0.047Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH50P6FSY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge	Original	STRH50P6FSY3 O-254AA 100kRad 34Mev/cm O-254AA	PDF
Contextual Info: STRH80P6FSY3 P-channel 60V - 0.021Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH80P6FSY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge	Original	STRH80P6FSY3 O-254AA 100kRad 34Mev/cm O-254AA	PDF
Contextual Info: STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH40P10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge	Original	STRH40P10FSY3 O-254AA 100kRad 34Mev/cm O-254AA	PDF
Contextual Info: STRH12P10ESY3 P-channel 100V - 0.265Ω - TO-257AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH12P10ESY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge	Original	STRH12P10ESY3 O-257AA 100kRad 34Mev/cm O-257AA	PDF
STRH12P10ESY1 Abstract: STRH12P10ESY3 Contextual Info: STRH12P10ESY3 P-channel 100V - 0.265Ω - TO-257AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH12P10ESY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight	Original	STRH12P10ESY3 O-257AA 100kRad 34Mev/cm STRH12P10ESY1 STRH12P10ESY3	PDF
Contextual Info: STRH80P6FSY1 STRH80P6FSY3 P-channel 60V - 0.021Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH80P6FSY1 60 V STRH80P6FSY3 60 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge	Original	STRH80P6FSY1 STRH80P6FSY3 O-254AA 34Mev/cm O-254AA	PDF
JESD97 Abstract: STRH12P10ESY1 STRH12P10ESY3 MG 5248 Contextual Info: STRH12P10ESY1 STRH12P10ESY3 P-channel 100V - 0.265Ω - TO-257AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH12P10ESY1 100 V STRH12P10ESY3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge	Original	STRH12P10ESY1 STRH12P10ESY3 O-257AA 34Mev/cm JESD97 STRH12P10ESY1 STRH12P10ESY3 MG 5248	PDF
Contextual Info: STRH80P6FSY3 P-channel 60V - 0.021Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH80P6FSY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight	Original	STRH80P6FSY3 O-254AA 100kRad 34Mev/cm	PDF
JESD97 Abstract: STRH80P6FSY1 Contextual Info: STRH80P6FSY1 STRH80P6FSY3 P-channel 60V - 0.021Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH80P6FSY1 60 V STRH80P6FSY3 60 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge	Original	STRH80P6FSY1 STRH80P6FSY3 O-254AA 34Mev/cm JESD97 STRH80P6FSY1	PDF
STRH50P6FSY1 Abstract: STRH50P6FSY3 Contextual Info: STRH50P6FSY3 P-channel 60V - 0.047Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH50P6FSY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge 3 2 1 TO-254AA	Original	STRH50P6FSY3 O-254AA 100kRad 34Mev/cm STRH50P6FSY1 STRH50P6FSY3	PDF
Contextual Info: STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40P10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge 3 2 1 TO-254AA ■	Original	STRH40P10FSY3 O-254AA 100kRad 34Mev/cm O-254AA	PDF
STRH40P10FSY3 Contextual Info: STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH40P10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge 3 2 1 TO-254AA	Original	STRH40P10FSY3 O-254AA 100kRad 34Mev/cm STRH40P10FSY3	PDF
JESD97 Abstract: S8C5H30L STS8C5H30L Contextual Info: STS8C5H30L N-channel 30V - 0.018 Ω - 8A/P-channel 30V - 0.045 Ω - 5A - SO-8 Low gate charge STripFET III MOSFET General features Type VDSS RDS on ID STS8C5H30L(N-channel) 30V <0.022 8A STS8C5H30L(P-channel) 30V <0.056 5A • Conduction losses reduced	Original	STS8C5H30L STS8C5H30L JESD97 S8C5H30L	PDF
Contextual Info: STS8C5H30L N-channel 30V - 0.018 Ω - 8A/P-channel 30V - 0.045 Ω - 5A - SO-8 Low gate charge STripFET III MOSFET General features Type VDSS RDS on ID STS8C5H30L(N-channel) 30V <0.022 8A STS8C5H30L(P-channel) 30V <0.056 5A • Conduction losses reduced	Original	STS8C5H30L STS8C5H30L	PDF

JESD97 Abstract: S8C5H30L STS8C5H30L Contextual Info: STS8C5H30L N-channel 30V - 0.018 Ω - 8A/p-channel 30V - 0.045 Ω - 5A - SO-8 Low gate charge STripFET III MOSFET Features Type VDSS RDS on ID STS8C5H30L(N-channel) 30V <0.022 8A STS8C5H30L(P-channel) 30V <0.056 5A • Conduction losses reduced ■ Switching losses reduced	Original	STS8C5H30L STS8C5H30L JESD97 S8C5H30L	PDF
Transistor Mosfet N-Ch 30V Abstract: STS8C5H30L S8C5H30L P-CHANNEL Contextual Info: STS8C5H30L N-CHANNEL 30V - 0.018Ω - 8A SO-8 P-CHANNEL 30V - 0.045Ω - 5A SO-8 LOW GATE CHARGE StripFET III MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID STS8C5H30L (N-Channel) STS8C5H30L (P-Channel) 30 V 30 V < 0.022 Ω < 0.055 Ω	Original	STS8C5H30L Transistor Mosfet N-Ch 30V STS8C5H30L S8C5H30L P-CHANNEL	PDF
S8C5H30L Abstract: STS8C5H30L Contextual Info: STS8C5H30L N-channel 30 V, 0.018 Ω, 8 A, p-channel 30 V, 0.045 Ω, 5 A SO-8 low gate charge STripFET III MOSFET Features Type VDSS RDS on max ID STS8C5H30L(n-channel) 30 V < 0.022 Ω 8A STS8C5H30L(p-channel) 30 V < 0.055 Ω 5A • Conduction losses reduced	Original	STS8C5H30L STS8C5H30L S8C5H30L	PDF
S857 Abstract: S8C5H30L STS8C5H30L Contextual Info: STS8C5H30L N-channel 30 V, 0.018 Ω, 8 A, P-channel 30 V, 0.045 Ω, 5 A SO-8 low gate charge STripFET III MOSFET Features Type VDSS RDS on max ID STS8C5H30L(N-channel) 30 V < 0.022 Ω 8A STS8C5H30L(P-channel) 30 V < 0.055 Ω 5A • Conduction losses reduced	Original	STS8C5H30L STS8C5H30L S857 S8C5H30L	PDF
RH40P Contextual Info: STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH40P10FSY3 100V • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization	Original	STRH40P10FSY3 O-254AA O-254AA STRH40P10 RH40P	PDF
Contextual Info: STRH40P10FSY1 STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40P10FSY1 100 V STRH40P10FSY3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned 3 2 1 TO-254AA	Original	STRH40P10FSY1 STRH40P10FSY3 O-254AA 34Mev/cm O-254AA	PDF
STRH40P10FSY3 Abstract: JESD97 STRH40P10FSY1 Contextual Info: STRH40P10FSY1 STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40P10FSY1 100 V STRH40P10FSY3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned 3 2 1 TO-254AA	Original	STRH40P10FSY1 STRH40P10FSY3 O-254AA 34Mev/cm STRH40P10FSY3 JESD97 STRH40P10FSY1	PDF
JESD97 Abstract: STRH50P6FSY1 STRH50P6FSY3 Contextual Info: STRH50P6FSY1 STRH50P6FSY3 P-channel 60V - 0.047Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH50P6FSY1 60 V STRH50P6FSY3 60 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned 3 2 1 TO-254AA ■	Original	STRH50P6FSY1 STRH50P6FSY3 O-254AA 34Mev/cm JESD97 STRH50P6FSY1 STRH50P6FSY3	PDF
STB16PF06L Abstract: STB16PF06LT4 B16PF06L Contextual Info: STB16PF06L P-CHANNEL 60V - 0.11Ω - 16A D2PAK STripFET MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STB16PF06L 60 V < 0.125 Ω 16 A 70 W • ■ ■ TYPICAL RDS(on) = 0.11 Ω LOW THRESHOLD DEVICE LOW GATE CHARGE DESCRIPTION	Original	STB16PF06L O-263 STB16PF06L STB16PF06LT4 B16PF06L	PDF
B16PF06L Abstract: STB16PF06 STB16PF06L STB16PF06LT4 Contextual Info: STB16PF06L P-CHANNEL 60V - 0.11Ω - 16A D2PAK STripFET MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STB16PF06L 60 V < 0.125 Ω 16 A 70 W • ■ ■ TYPICAL RDS(on) = 0.11 Ω LOW THRESHOLD DEVICE LOW GATE CHARGE DESCRIPTION	Original	STB16PF06L O-263 B16PF06L STB16PF06 STB16PF06L STB16PF06LT4	PDF

P CHANNEL LOW GATE CHARGE STRIPFET Search Results

P CHANNEL LOW GATE CHARGE STRIPFET Result Highlights (5)

P CHANNEL LOW GATE CHARGE STRIPFET Datasheets Context Search

STRH12P10ESY1

JESD97

JESD97

STRH50P6FSY1

STRH40P10FSY3

JESD97

JESD97

Transistor Mosfet N-Ch 30V

S8C5H30L

S857

RH40P

STRH40P10FSY3

JESD97

STB16PF06L

B16PF06L