P CHANNEL LOW GATE CHARGE STRIPFET Search Results

Contextual Info: STRH50P6FSY3 P-channel 60V - 0.047Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH50P6FSY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge

Contextual Info: STRH80P6FSY3 P-channel 60V - 0.021Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH80P6FSY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge

Contextual Info: STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH40P10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge

Contextual Info: STRH12P10ESY3 P-channel 100V - 0.265Ω - TO-257AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH12P10ESY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge

STRH12P10ESY1

Abstract: STRH12P10ESY3
Contextual Info: STRH12P10ESY3 P-channel 100V - 0.265Ω - TO-257AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH12P10ESY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight

Contextual Info: STRH80P6FSY1 STRH80P6FSY3 P-channel 60V - 0.021Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH80P6FSY1 60 V STRH80P6FSY3 60 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge

Contextual Info: STRH80P6FSY3 P-channel 60V - 0.021Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH80P6FSY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight

JESD97

Abstract: STRH80P6FSY1
Contextual Info: STRH80P6FSY1 STRH80P6FSY3 P-channel 60V - 0.021Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH80P6FSY1 60 V STRH80P6FSY3 60 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge

STRH50P6FSY1

Abstract: STRH50P6FSY3
Contextual Info: STRH50P6FSY3 P-channel 60V - 0.047Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH50P6FSY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge 3 2 1 TO-254AA

Contextual Info: STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40P10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge 3 2 1 TO-254AA ■

STRH40P10FSY3

Contextual Info: STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH40P10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge 3 2 1 TO-254AA

JESD97

Abstract: S8C5H30L STS8C5H30L
Contextual Info: STS8C5H30L N-channel 30V - 0.018 Ω - 8A/P-channel 30V - 0.045 Ω - 5A - SO-8 Low gate charge STripFET III MOSFET General features Type VDSS RDS on ID STS8C5H30L(N-channel) 30V <0.022 8A STS8C5H30L(P-channel) 30V <0.056 5A • Conduction losses reduced

Contextual Info: STS8C5H30L N-channel 30V - 0.018 Ω - 8A/P-channel 30V - 0.045 Ω - 5A - SO-8 Low gate charge STripFET III MOSFET General features Type VDSS RDS on ID STS8C5H30L(N-channel) 30V <0.022 8A STS8C5H30L(P-channel) 30V <0.056 5A • Conduction losses reduced

Transistor Mosfet N-Ch 30V

Abstract: STS8C5H30L S8C5H30L P-CHANNEL
Contextual Info: STS8C5H30L N-CHANNEL 30V - 0.018Ω - 8A SO-8 P-CHANNEL 30V - 0.045Ω - 5A SO-8 LOW GATE CHARGE StripFET III MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID STS8C5H30L (N-Channel) STS8C5H30L (P-Channel) 30 V 30 V < 0.022 Ω < 0.055 Ω

S857

Abstract: S8C5H30L STS8C5H30L
Contextual Info: STS8C5H30L N-channel 30 V, 0.018 Ω, 8 A, P-channel 30 V, 0.045 Ω, 5 A SO-8 low gate charge STripFET III MOSFET Features Type VDSS RDS on max ID STS8C5H30L(N-channel) 30 V < 0.022 Ω 8A STS8C5H30L(P-channel) 30 V < 0.055 Ω 5A • Conduction losses reduced

RH40P

Contextual Info: STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH40P10FSY3 100V • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization

Contextual Info: STRH40P10FSY1 STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40P10FSY1 100 V STRH40P10FSY3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned 3 2 1 TO-254AA

STRH40P10FSY3

Abstract: JESD97 STRH40P10FSY1
Contextual Info: STRH40P10FSY1 STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40P10FSY1 100 V STRH40P10FSY3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned 3 2 1 TO-254AA

JESD97

Abstract: STRH50P6FSY1 STRH50P6FSY3
Contextual Info: STRH50P6FSY1 STRH50P6FSY3 P-channel 60V - 0.047Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH50P6FSY1 60 V STRH50P6FSY3 60 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned 3 2 1 TO-254AA ■

STB16PF06L

Abstract: STB16PF06LT4 B16PF06L
Contextual Info: STB16PF06L P-CHANNEL 60V - 0.11Ω - 16A D2PAK STripFET MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STB16PF06L 60 V < 0.125 Ω 16 A 70 W • ■ ■ TYPICAL RDS(on) = 0.11 Ω LOW THRESHOLD DEVICE LOW GATE CHARGE DESCRIPTION

B16PF06L

Abstract: STB16PF06 STB16PF06L STB16PF06LT4
Contextual Info: STB16PF06L P-CHANNEL 60V - 0.11Ω - 16A D2PAK STripFET MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STB16PF06L 60 V < 0.125 Ω 16 A 70 W • ■ ■ TYPICAL RDS(on) = 0.11 Ω LOW THRESHOLD DEVICE LOW GATE CHARGE DESCRIPTION

STP12PF06

Contextual Info: STP12PF06 P - CHANNEL 60V - 0.18 Ω - 12A TO-220 STripFET POWER MOSFET TYPE STP12PF06 • ■ ■ ■ ■ VDSS R DS on ID 60 V < 0.20 Ω 12 A TYPICAL RDS(on) = 0.18 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED

STP12PF06 morocco

Contextual Info: STP12PF06  P - CHANNEL 60V - 0.18 Ω - 12A TO-220 STripFET POWER MOSFET TYPE STP12PF06 • ■ ■ ■ ■ V DSS R DS o n ID 60 V < 0.20 Ω 12 A TYPICAL RDS(on) = 0.18 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED

Contextual Info: STD10PF06 P -CHANNEL 60V -0 .1 8 £2 -1 0 A TO-252 STripFET POWER MOSFET TYP E STD10PF06 V dss R dS oii Id 60 V < 0.2 0 Q. 10 A • . . . . TYPICAL RDS(on) = 0.18 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION