P CHANNEL 15 AMP Search Results

AD8183

Abstract: AD8183ARU AD8183-EVAL AD8185 AD8185ARU AD8185-EVAL C3689
Contextual Info: a FEATURES Fully Buffered Inputs and Outputs Fast Channel-to-Channel Switching: 15 ns High Speed 380 MHz Bandwidth –3 dB 200 mV p-p 310 MHz Bandwidth (–3 dB) 2 V p-p 1000 V/␮s Slew Rate G = +1, 2 V Step 1150 V/␮s Slew Rate G = +2, 2 V Step Fast Settling Time of 15 ns to 0.1%

AD8185

Abstract: AD8185ARU AD8183 AD8183ARU AD8183-EVAL AD8185-EVAL C3689 folded cascode second stage DB200
Contextual Info: a FEATURES Fully Buffered Inputs and Outputs Fast Channel-to-Channel Switching: 15 ns High Speed 380 MHz Bandwidth –3 dB 200 mV p-p 310 MHz Bandwidth (–3 dB) 2 V p-p 1000 V/␮s Slew Rate G = +1, 2 V Step 1150 V/␮s Slew Rate G = +2, 2 V Step Fast Settling Time of 15 ns to 0.1%

AD8183

Abstract: AD8183-EVAL FTH A 001 26 10 AD8183ARU AD8185 AD8185ARU AD8185-EVAL folded cascode second stage
Contextual Info: ANALOG DEVICES FEATURES Fully Buffered Inputs and Outputs Fast Channel-to-Channel Switching: 15 ns High Speed 380 MHz B andwidth -3 dB 200 m V p-p 310 MHz B andwidth (-3 dB) 2 V p-p 1000 S lew Rate G = +1, 2 V Step 1150 S lew Rate G = +2, 2 V Step Fast Settling Tim e of 15 ns to 0.1%

Contextual Info: FQPF15P12 P-Channel QFET MOSFET -120 V, -15 A, 0.2 Ω Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

Contextual Info: 380 MHz, 25 mA, Triple 2:1 Multiplexers AD8183/AD8185 a FEATURES Fully Buffered Inputs and Outputs Fast Channel-to-Channel Switching: 15 ns High Speed 380 MHz Bandwidth –3 dB 200 mV p-p 310 MHz Bandwidth (–3 dB) 2 V p-p 1000 V/␮s Slew Rate G = +1, 2 V Step

fqpf15p12

Abstract: FQP15P12 P-CHANNEL MOSFET fqpf15
Contextual Info: FQP15P12/FQPF15P12 P-Channel QFET MOSFET -120 V, -15 A, 20 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

Contextual Info: MOSFETS N CHANNEL POWER MOSFETS - SURFACE MOUNT PACKAGE LCC-3 CERAMIC CHIP CARRIER cy>*S VOr DEVICE TYPE r DS ON CISS p f* VOLTS PEAK 'd AMPS SNLC120 100 9.2 0.27 15 350 SNLC220 200 5.0 0.80 15 450 SNLC320 400 3.3 1.80 20 350 SNLC420 500 2.5 3.08 20 350 SNLC130

CHM5P03PAGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM5P03PAGP CURRENT 15 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE

PL3120

Abstract: V0 3150 optocoupler PL3150 PL-3120 atd2a SMPS A43 UCL-200 Xi 6000 Series UPS ups art 600 hp 3150
Contextual Info: Tljjm H EW LE TT » mLHM P A C K A R D 0.5 Amp Output Current IGBT Gate Drive Optocoupler Technical Data HCPL-3150 Single Channel HCPL-315J (Dual Channel) Features • 0.5 A Minimum Peak Output Current • 15 kV/|is Minimum Common Mode Rejection (CMR) at

ZL50010QCG1

Abstract: GR-1244-CORE MS-026 ZL50010 32CH1
Contextual Info: ZL50010 Flexible 512 Channel DX with Enhanced DPLL Data Sheet Features VDD • • • • • • • • RESET Data Memory P/S Converter Output HiZ Control Connection Memory Microprocessor Interface and DPLL OSC Output Timing STo0-15 STOHZ0-15 FPo0 CKo0

Contextual Info: ZL50010 Flexible 512 Channel DX with Enhanced DPLL Data Sheet Features VDD • • • • • • • • • RESET Data Memory P/S Converter Output HiZ Control Connection Memory Microprocessor Interface and DPLL OSC Output Timing STo0-15 STOHZ0-15 FPo0 CKo0

TP2635

Abstract: TP2635N3 TP2640 TP2640LG TP2640N3 TP2640ND
Contextual Info: TP2635 TP2640 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† -350V 15Ω -2.0V -0.7A – TP2635N3 — -400V 15Ω -2.0V -0.7A

TP2635

Abstract: TP2635N3 TP2640 TP2640LG TP2640N3 TP2640ND
Contextual Info: TP2635 TP2640 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† -350V 15Ω -2.0V -0.7A – TP2635N3 — -400V 15Ω -2.0V -0.7A

TP2635

Abstract: TP2635N3 TP2635ND TP2640 TP2640LG TP2640N3 TP2640ND
Contextual Info: TP2635 TP2640 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† -350V 15Ω -2.0V -0.7A – TP2635N3 TP2635ND -400V 15Ω -2.0V

4600 fet transistor

Abstract: POWER MOSFET 4600 MOSFET 4600 4600 mosfet 369A-13 AN569 MTD20P06HDL Z25 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD20P06HDL HDTM OS E-FET™ High D en sity P o w er FET DPAK fo r S u rface M ount Motorola Preferred Device P-Channel Enhancement-Mode Silicon TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS

ID9A

Abstract: WTD9575 D9A marking
Contextual Info: WTD9575 Surface Mount P-Channel Enhancement Mode POWER MOSFET 3 DRAIN CURRENT DRAIN -15 AMPERES P b Lead Pb -Free DRAIN SOURCE VOLTAGE -60 VOLTAGE 1 GATE Features: 2 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <90m Ω@V GS =-10V *Simple Drive Requirement

19P20

Abstract: IXTH19P20 Mosfet K 135 To3 ixtm19p20
Contextual Info: IDE D I X Y s CORP □ I Mbôt,E5b IX Y S OODOSba 7 | P-CHANNEL MOSFETS IXTH19P20, 15 IXTM19P20, 15 MAXIMUM RATINGS Parameter Sym. IXTH19P20 IXTM19P20 IXTH19P15 IXTM19P15 Drain-Source Voltage 1 Vdss 200 150 Vdc Drawv-Gate Voltage (Rqs = 1-OMft) (1) Vdgr

TN6Q04

Abstract: 2SJ585 TN6Q03 2sk4100 2SK4096LS 2SK4100ls 2SJ655 2SK3748 2SK4087LS datasheet 2SK4101LS
Contextual Info: Large Signal Packages Selector Guide CONTENTS ŝQuick Selection Guide P-channel New 2 •TO-3JML Package 14 ŝQuick Selection Guide N-channel New 3~5 ■TO-3PBL Package 14 6,7 ■TO-3PB Package 14 8.9 ■TO-3PML Package 14 15 ŝSwitching Power Supply ŝMotor Drive Use

stl 106 a

Contextual Info: MP3276 p y y m Fault Protected 16-Channel, 12-Bit Data Acquisition Subsystem jU l. FEATURES • Fault Protected 16-Channel 12-Bit A/D Converter with Sample & Hold, Reference, Clock and 3-state Outputs • Fast Conversion, less than 15|.iS • Microprocessor Bus Interface

MA758

Abstract: IF FM detector 8 channel RF Control Circuit rf detector MA721 MA780 a739 rf converter 6 Channel audio Mixer DIAGRAM single channel audio amp
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS LINEAR L-C38 L-C37 iuA721 mA758 16 1 Pv+ AMP 2 IN 15 ^ 2 AMP 2 I— DECOUPLE I— 3 AMP 1 OUT 14 □ AMPLIFIER OUT AMP 2 OUT ^2 GND 2 LEFT CHANNEL DE-EMPHASIS fm a m p in LEFT CHANNEL OUT 12 OND1 Q ^ FM AMP DECOUPLE ,11

136y

Abstract: 2117 equivalent p channel de mosfet zt173 MOTOROLA S 5068
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F136 M R F 136Y The RF MOSFET Line RF P ow er F ie ld -E ffe ct Transistors N -Channel E nhancem ent-M ode MOSFETs 15 W, 30 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER FETs . . designed for wideband large-signal amplifier and oscillator applications up

mosfet 30V 18A TO 252

Contextual Info: WTD40N03 Surface Mount P-Channel Enhancement Mode POWER MOSFET 3 DRAIN DRAIN CURRENT -15 AMPERES P b Lead Pb -Free DRAIN SOURCE VOLTAGE -60 VOLTAGE 1 GATE Features: 2 *Super High Dense Cell Design For Low R DS(ON) SOURCE R DS(ON) <90m Ω@V GS =-10V 4 *Simple Drive Requirement

030 18a diode

Contextual Info: WTD40N03 Surface Mount P-Channel Enhancement Mode POWER MOSFET 3 DRAIN DRAIN CURRENT -15 AMPERES P b Lead Pb -Free DRAIN SOURCE VOLTAGE -60 VOLTAGE 1 GATE Features: *Super High Dense Cell Design For Low R DS(ON) 2 SOURCE R DS(ON) <90m Ω@V GS =-10V 4 *Simple Drive Requirement

MTW20P10

Abstract: MOSFET MTW 20P10 20P10 20p10 motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information TMOS E-FET Power Field Effect tran sisto r T O -247 w ith Isolated Mounting Hole MTW 20P10 Motorola Preferred Device TMOS POWER FET 20 AMPERES 100 VOLTS RDS on = 0*15 OHM P-Channel Enhancement-Mode Silicon Gate