OUTLINE DRAWING 37 Search Results

GDFP2-F28

Abstract: GDIP4-T28 5962-86063 5962-86063 01
Contextual Info: r REVISIONS LTR A DATE YR-MO-DA DESCRIPTION Updated boilerplate. Added device type 03. Moved endurance and data retention testing requirements from Section 4 of drawing to Section 3 of drawing. Converted case outline "Y11 to standard package. Editorial changes throughout.

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAsMMIC> 00M077 37, • MGF7108A UHF BAND GaAs POWER AMPLIFIER IC DESCRIPTION OUTLINE DRAWING MGF7108A is a GaAs monolithic microwave integrated circuits for Unit:millimeters use in 900MHz band power amplifiers. @ Va c FEATURES NU

FS12KM

Abstract: FS12KM-5
Contextual Info: MITSUBISHI Neh POWER MOSFET FS12KM-5 HIGH-SPEED SWITCHING USE FS12KM-5 OUTLINE DRAWING • V dss . Dimensions in mm 250V 0.40Q • rDS ON (MAX) . • I d . 12A

IDT7025S35GB

Abstract: qml-38535 5962-9161708MXA IDT7025L45FB smd marking 5R TSOP 66 thermal resistance SMK2-67025EV-30SV SMD MARKING CODE UBR
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA A Added provisions for the inclusion of radiation-hardened devices. Updated boilerplate. Added case outline "Z" to drawing. Added device type 09 to drawing. - glg 00-01-21 Raymond Monnin B Corrections to table 1, ICC3 and ICC5 conditions column. - glg

RD70HVF1

Abstract: RD70HVF1-101 RD70HVF vhf power transistor 50W uhf power transistor 50W MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR RF Transistor s-parameter vhf 100OHM Rf power transistor mosfet
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically

RD04HMS2

Abstract: JAPANESE TRANSISTOR 2010 920MHz TRANSISTOR 636 RD04HMS Diode mark 1445
Contextual Info: Silicon RF Power Semiconductors RD04HMS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 6.0+/-0.15 0.2+/-0.05 0.22 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 OUTLINE DRAWING

GRM39

Abstract: GRM708 RD05MMP1 diode GP 829 6030D
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power

Contextual Info: Standard Products Found Page 1 of 2 For use with TO-202 packages 577304b00000 VIS#002565 Mechanical Outline Drawing A Dim 9.53 .375 Thermal Resistance 27.2 Thermal resistance value is based on a 75°C rise in natural convection

A 1469 mosfet

Abstract: RD30HVF1 transistor 38W 1599 transistor 100OHM MITSUBISHI RF POWER MOS FET TRANSISTOR D 1785 transistor D 1666 transistor 38W 3 pin
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE DRAWING RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

Contextual Info: Mallory Sonalert Products,Inc. Sales Outline Drawing Part #: Revision: MSR516NJR D Specifications: Sound Level Category Mode of Operation Voltage Rating Frequency Loudness @ 2 FT Current Draw Housing Material Storage g Temperature p Operating Temperature Weight Typical

10PPS

Abstract: MALLORY C
Contextual Info: Mallory Sonalert Products,Inc. Sales Outline Drawing Part #: Revision: MSR516NPR C Specifications: Sound Level Category Mode of Operation Voltage Rating Frequency Loudness @ 2 FT Current Draw Housing Material Storage g Temperature p Operating Temperature Weight Typical

SPLL121SA

Contextual Info: Click Package To View Outline Drawing INTEGRATED FREQUENCY FREQUENCY INTEGRATED SYNTHESIZERS SYNTHESIZERS 124SL FREQUENCY RANGE MHz DC BIAS REQUIREMENTS STEP SIZE (KHz) Vcc1 & 2 (Volts) OUTPUT POWER CURRENT Max. (mA) dBm SETTLING TIME Tolerance (dB) (mSec)

transistor 3005

Abstract: transistor 3005 2 CT60AM-20 transistor FS 20 SM L 3005 TRANSISTOR CT60AM20 transistor TO-220 Outline Dimensions K 4005 transistor resonant inverter ct FS 8201
Contextual Info: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-20 RESONANT INVERTER USE OUTLINE DRAWING Dimensions in mm 5 20MAX. >3.2 «— © 0.5 5.45 5.45 • V ces . 1000V © © © GATE COLLECTOR EMITTER

Contextual Info: LD83_24 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Description: OUTLINE DRAWING Powerex Dual SCR Modules are designed for use in applications requiring phase control and isolated packaging. The modules are isolated

TRANSISTOR D 1785

Abstract: diode GP 829 transistor 3669 6030D RD05MMP1 diode 6.2 TRANSISTOR D 1765 720 transistor D 1762 than85 5.5w
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power

SPLL121SA

Contextual Info: INTEGRATED FREQUENCY FREQUENCY INTEGRATED SYNTHESIZERS SYNTHESIZERS Click on package to view outline drawing 124SL FREQUENCY RANGE MHz DC BIAS REQUIREMENTS STEP SIZE (KHz) Vcc1 & 2 (Volts) OUTPUT POWER CURRENT Max. (mA) dBm SETTLING TIME Tolerance (dB) (mSec)

2n3904 smd

Abstract: 2N3904 LT1085 OM1850 OM1850NKM OM1850NMM OM1850STM JC SMD ja smd 5962-8864601X
Contextual Info: OM1850NKM OM1850STM OM1850NMM 3 AMP LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR APPROVED TO DESC DRAWING 5962-88646 Three Terminal, Positive Adjustable Low Dropout Voltage Regulator In Hermetic Packages See Mechanical Outline FEATURES • • • • • •

2SK2050

Contextual Info: 2SK2050 N-channel MOS-FET 100V 0,055Ω F-III Series > Features - 30A 80W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier

RD00HVS1

Abstract: transistor 5024 transistor D 5024 TRANSISTOR 7916
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

3MA18

Abstract: DAM3MA47 DAM3MA27 DAM3MA39 DAM3MA10 DAM3MA11 DAM3MA12 DAM3MA13 DAM3MA15 DAM3MA16
Contextual Info: SURGE SUPPRESSOR DIODE DAM3MA FEATURES OUTLINE DRAWING • High transient reverse power capability suitable for protecting automobile electronic components etc. • High heat-resistant due to glass passivation. Unit in mm inch Direction of polarity Type mark

GP144

Abstract: CR10
Contextual Info: PRELIMINARY MITSUBISHI SEMICONDUCTOR <GaAs FET> Notice: This is not a final specification. Some parametric limits are subject to change. MGFS45B2527B 2.5 - 2.7GHz BAND 30W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFS45B2527B is an internally impedance-matched

CR10

Abstract: MGFC47B3436B GaAs FET 15A
Contextual Info: PRELIMINARY MITSUBISHI SEMICONDUCTOR <GaAs FET> Notice: This is not a final specification. Some parametric limits are subject to change. MGFC47B3436B 3.4 - 3.6GHz BAND 50W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC47B3436B is an internally impedance-matched

low noise hemt transistor

Abstract: InGaAs HEMT mitsubishi MGF4951A MGF4952A
Contextual Info: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.

Contextual Info: n Outline Drawing IGBT MODULE N series n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (~3 Times Rated Current)