OSE 104 Search Results

diode smd ED 84

Abstract: smd transistor NG
Contextual Info: FSYC9260D, FSYC9260R Semiconductor August 1998 Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs File Number 4569 Features • 2 8 A , -200V , rQg ONi = 0.130J2 T h e D iscrete Products O pe ra tio n of Harris Sem ico n du cto r • Total D ose

5514f

Abstract: TO220H APT5514 TO-220H
Contextual Info: ADVANCED POWER TECHNOL OGY OSE D | QESVTQT □ODDEL.4 □ | T-3^-lV APT6014FN 600V 43A 0.14 Q APT5514FN 550V 43A 0.14 Q POWER MQS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS *D . 'dm v gs All Ratings: Tc « 25°C unless otherwise specified.

52D273K

Abstract: mc5201 685k 100v capacitor MC62D MC52C1 J400 wc52 MC52H s
Contextual Info: OSE D ELECTRONIC CONCEPTS INC A -o s-n -o -? B5ES70l4 DQ00aa5 H Dimensional Data OPERATING TEMPERATURE RANGE 50 —55°C to + 125°C w ithout derating. CAPACITANCE RANGE Cap. in fif .001/uF to 100/iF. 75 VDCW iVDCVV .Cat. No. Size . teatJ j fb ri1 0 & lirlnd w s

Contextual Info: FSS913AOD, FSS913AOR Semiconductor August 1998 10A, -100V, 0.280 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features • 10A , -100V , rQg ONi = 0.280J2 T h e D iscrete Products O pe ra tio n of Harris Sem ico n du cto r • Total D ose - File Number 4451.2

Contextual Info: ELECTRONIC C ONC E P T S I NC OSE 3E25704 PQDOEit. fl D 3225704 ELECTRONIC CONCEPTS INC 05E 0 0 2 9 6 / - O S '- / S ' D Metallized Polypropylene Capacitor Capacitors Plastic Film Wrap, Epoxy End Fill) Type MP12 In 1 9 7 3 , E lectro nic C oncepts, In c. received a substantial research

AOI211

Abstract: MX08 IC TTL 7400 schematic AOI33 8 bit full adder "8 bit full adder" LA01 BCD-TO-7-SEGMENT DECODER 74151H TR-C06
Contextual Info: ÉNATL SEUICOND {MEMORY} OSE D | b S O llBb P 0 bl3Cm FGC Series t J^p^ Advanced 2-MlCrOll CMOS Gate Array Family fa T rc h T ld ASchlum bergerCom pany Description Array Organization The FGC Series is an advanced, high performance CMOS gate array family designed for LSI implementation of existing

47nj capacitor

Abstract: EWS 100-24 NTC 100-11 AQ105 HK0603 HK1005 HK1608 HK2125 HKQ0603 LK1005
Contextual Info: Application Cellular Phone Applications cently the of daily life. Re ity ss ce ne te lu are an abso sleek high -end obile phones between the d Nowadays, m ze ri la po e c has becom m ore on ba si phone market end, fo cu si ng global mobile er w lo e th th ose on

Contextual Info: HOLTEK r r HT16270 RAM Mapping 64 x16 LCD Controller for I/O mC LCD Controller Product Line Selection Table HT162X HT1620 HT1621 HT1622 HT16220 HT1623 HT1625 HT1626 HT1627 HT16270 COM 4 4 8 8 8 8 16 16 16 SEG 32 32 32 32 48 64 48 64 64 B uilt-in Ose. V V V

Contextual Info: FSL23A0D, FSL23A0R D ata S h eet 6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs June 1999 F ile N u m b er 4476.2 Features • 6A , 2 0 0 V , rQg ONi = 0.350J2 • Total D ose T h e D iscrete Products O pe ra tio n of Harris Corporation,

Contextual Info: FSJ055D, FSJ055R Data Sheet 70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs July 1999 File Number 4250.4 Features • 7 0 A , 60V, rQg ONi = 0 .0 1 2£2 • Total D ose T h e D iscrete Products O pe ra tio n of Harris has d evelo ped a

32kx8 sram

Abstract: VSS115 32kxS
Contextual Info: Honeywell Advance Information HC80820 256K X 8 RADIATION-TOLERANT SRAM FEATURES R A D IA TIO N OTHER • Total D ose Hardness at Tactical Level • S pare Mem ory Chip can be Substituted O n-The-Fly • Soft Error R ate of <1 x1 O'5 upsets/bit-day or <1 upset/module-day

IC 7413

Abstract: 74LS13PC schmitt trigger 7413 ic 74ls13
Contextual Info: NATIONA L SENICOND -CLOGIO OSE D | b S D H 5 5 Q0b3bS0 □ | 13 c o r JNECT ON DIAG RAM PIN OUT A 54/7413 54LS/74LS13 DUAL 4-INPUT SCHMITT TRIGGER 1 ORDERING CODE: See Section 9 COMMERCIAL GRADE PIN PKGS Vcc = +5.0 V ±5%, T a = 0° C to +70° C OUT MILITARY GRADE

HS1-6504R

Abstract: F0f13 IC MARKING A60
Contextual Info: HS-6504RH S Radiation Hardened 4096 X 1 CMOS RAM December 1992 Features • • • • • • • • • • • • • • Pinouts Total D ose 1 x 10s RAD S i D ata U pset > 1 0 8 RAD (SIVs Latch-U p Free To > 1 x 1012 RAD (S I)/s Low Pow er Standby 1100|iW M ax

ML-7560

Abstract: ML 7560 machlett ML 1100 dc power Raytheon Company thyratron triode
Contextual Info: IS S U E D 5-64 /'T'v L z: □ 0 a General Purpose Triodes 440 kW C W 15 M w Pulse Power ELECTRON TUBE S PECIALIST D E SC R IP T IO N T h e M L -7560 and M L -8317 are g en eral-p u rp ose triodes suitable for various rf and pulse applications. T hese tubes

BC119

Abstract: 2N1613 fairchild BSY90 BSX20 NPN TRANSISTORS LIST 2N915 itt 2222 bfr36 2N2369A 2N914
Contextual Info: Fairchild Sem iconductors S e m ic o n d ti^ H n Silicon Small Signal Transistors N P N Silicon High Speed Saturated Switching Transistors Metal Can T O IS R E FE R E N C E T A B L E For medium speed - see General P u rp ose Section. C H A R A C T E R I S T I C S @ 25"C

BUL 380

Abstract: E1017 R52KF8A
Contextual Info: 4855452 OSE D | 4Ö5S452 OGDflOSb fil- 08056 D T ^ a 3 ~ ¿ 13 D ata Sheet No. P D - 2 . 1 8 7 I O R l in te r n a tio n a l, r e c t i f i e r INTERNATIONAL RECTIFIER R52KF SERIES 800-600 VOLTS RANGE REVERSE RECOVERY TIME I.Qus 1150 AMP AVG HOCKEY PUK SOFT FAST RECOVERY RECTIFIER DIODES

R23AF 1200-1000

Abstract: Q7T4 R23AF series soft fast recovery rectifier diode DO-200AA R23AF
Contextual Info: m — OSE D 1 4öh545£ OODTTMS b | I I 02E 07942 D T V ¿S3 - =3 3 Data Sheet No. PD-2.111 IO R I N T E R N A T I O N A L RECTIFIER iNTtKNATlONAL RL e n i - 1 ER R23AF SERIES 1200-1000 VOLTS RANGE REVERSE RECOVERY TIME 1.0//S 280 AMP AVG HOCKEY PUK SOFT FAST RECOVERY RECTIFIER DIODES

Contextual Info: A L U M IN U M E LE C T R O LY T IC C A PA C IT O RS PC [ For General ] Screw Term inal Type o f A lum inum Electro lytic C a p a cito rs G en eral Purp ose ELECTRICAL CHARACTERISTICS Rated Voltage : 6.3 ~ 100V / I 60 ~ 450V Operating Temperature : -40° ~ +85°C / -25° — t85°C

Contextual Info: T e st P o in t T e r m in a ls w ith A c c u - L o k o r P re ss -F it M o u n t in g Lo ose Part No. 1032 1033 R eeled P art No. 6032-6 6033-6 M ounting Type Press-Fit Press-Fit M aterial T hickness/ Type 0.020" 0.51mm Brass 0.032" (0.81 iron) Brass

Contextual Info: FAST RECOVERY RECTIFIERS OPERATING AMD STORAGE TEMPERATURE M a xim u m Peak SURGE PART NUMBER M a xim u m A verage R e ctifie d C urre n t M a x im u m M a x im u m F o rw ard Peak @ H alf-W ave . R esistive Load S urge C urre n t @ 8 .3 m s 60H z S up erim p ose d

AT41511-TR1

Abstract: AT-41511-TR1
Contextual Info: W h a t HEWLETT m L 'fiM PA C K A R D Low C ost G eneral P u rp ose T ran sistors Technical Data AT-41511 AT-41586 Features D escription • L ow N oise F ig u re 1.4 dB Typical a t 1 GHz 1.7 dB Typical a t 2 GHz • H ig h A sso c ia te d G ain 17.0 dB Typical a t 1 GHz

1DI300A-120

Abstract: 1DI400D-100 ETK81-050 1D500A-030 ETK85-050 ID200A-020 1D200A-020 1DI200A-120 1DI200A-140 1DI200Z-100
Contextual Info: s 001 0Ï üüfi 9 006 009 O’l 0092 921—0 * - 091 009 001 0'9 0U2 001 9 009 009 0 9 0 -1 8 1 1 3 Si 5 01 0*1 os* 9 002 009 0*1 0002 9 2 1 -0 * - 091 ose 91 9* 091 Si 9 # 09* 009 0 9 0 - 9 8M 13 09 9 001 0*1 os* 9 oo 009 0*1 0002 LO T o OSI ooe OS ‘ o*e

ETK85-050

Abstract: ID500A-030 lt 5240 ETK81-050 H-17 H-18 H-19 1DI 150
Contextual Info: s 001 0 Ï üüfi 9 006 009 O’ l 0092 921— 0 * - 091 009 001 0'9 0U2 001 9 009 009 0 9 0 -1 8 1 1 3 Si 5 01 0*1 os* 9 002 009 0*1 0002 92 1 -0 *- 091 ose 91 9* 091 Si 9 # 09* 009 0 9 0 - 9 8M 13 09 9 001 0*1 os* 9 o o 009 0*1 0002 LO T o OSI ooe OS ‘ o*e

Contextual Info: FEDL67Q4060-01 Issue Date: Jan. 21, 2008 ML67Q4060/61/50/51 32-bit General-Purpose ARM-Based Microcontroller OVERVIEW This LSI is a general-purpose microcontroller that integrates peripheral functions such as I2C, I2S, and various serial interfaces. It uses the ARM7TDMITM 32-bit RISC CPU developed by ARM Limited as its core.