OQ20 Search Results

cd018

Contextual Info: TMS28F033 4194304-BIT SYNCHRONOUS FLASH MEMORY _ SM JS633 - NOVEMBER 1997 PAF 80-PIN PACKAGE TOP VIEW 8 X to. > i> 5 ¡r lo o Ear IS IS IS |w lo I * 0017 C D018 C DQ19 C VDDE C VSSE C OQ20 C 0Q21 C 0Q22 C DQ23 C DQ24 C DQ25 C

DG21

Contextual Info: O K I Sem iconductor M SC 23437A -X X B S9/D S9 4,194,304-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI M SC23437A -xxBS9/D S9 is a fully decoded 4,194,304-w ord x 36-bit CMOS Dynamic Random A ccess M em ory M odule com posed of nine 16-Mb DRAMs 4M x 4 in SOJ packages

Contextual Info: HB56D25632 S e rie s -262,144-Word x 32-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The HB56D25632B is a 256k x 32 dynamic R A M module, mounted 8 pieces of 1 Mbit D R A M HM514256JP sealed in S O J package. An outline of the HB56D25632B is 72-pin sin­

V442

Contextual Info: ADVANCE MICRON I m “ rn,“f,.T M T24D836 8M EGX 36, 16 M EGX 18 D R A MM O D U LE DRAM MODULE 8 MEG X 36,16 MEG x18 NEW I FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View OPTIONS 72-Pin SIMM ( 1 - 22) MT24D836M/G nfmrnTTmTtmrnnTrnrrrrm MARKING • Timing

z1071

Contextual Info: ADVANCE |U |IC R O N 32K SYNCHRONOUS SRAM +3.3V SUPPLY, +2.5V I/O, PIPELINED AND SELECTABLE BURST MODE • • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 4.5,5,5.5 and 6ns Fast OE# access times: 4.5,4.8, 5.5 and 6ns +3.3V +0.3V/-0.165V power supply (Vcc)

Contextual Info: MH1 M36BFJ-7,-8 FAST PAGE MODE 37748736-BIT 1048576-WORD BY 36-BIT DYNAMIC RAM DESCRIPTION The M H 1M 36B FJ is a 1 0 4 8 5 7 6 -w ord x 3 6 - bit dynamic RAM. This consists o f nine industry standard PIN CONFIGURATION(TOP VIEW ) [Single side] 1 M x 4 - b it

44C256

Abstract: cm442 DU26
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM44256 Series 4MB R4000 Secondary Cache Fast Static RAM Module Set F o u r M C M 4 4 2 5 6 m o d u le s c o m p ris e a fu ll 4 M B o f s e c o n d a ry c a c h e fo r th e R 4 0 0 0 p ro c e s s o r. E a c h m o d u le c o n ta in s n in e M C M 6 7 2 9 W J ta s t s ta tic R A M s fo r

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM56824A DSPRAM 8K x 24 Bit Fast Static RAM The MCM56824A is a 196,608 bit static random access memory organized as 8,192 words of 24 bits. The device integrates an 8K x 24 SRAM core with multiple FN PACKAGE chip enable inputs, output enable, and an externally controlled single address pin

D51232

Abstract: simm 256K FPM
Contextual Info: MT2D25632, MT4D51232 256K, 512K x 32 DRAM MODULES MICRON 256K, 512K x 32 DRAM MODULE 1, 2 MEGABYTE, 5V, FAST PAGE MODE FEATURES PIN ASSIGNMENT (Front View • JE D E C - and in d u stry-stan d ard p in o u t in a 72-pin sin gle-in -lin e m em o ry m o d u le (SIM M )

Contextual Info: KMM332V203BS-L KMM332V213BS-L DRAM MODULE KMM332V203BS-L / KMM332V213BS-L Fast Page Mode 2Mx32 DRAM DIMM, 2Mx8, Low Power with Self Ref, 4K & 2K Refresh, 3.3V DESCRIPTIO N The Samsung KMM332V20 1 3BS is a 2M bit x 32 Dynamic RAM high density memory module. The

Contextual Info: KMM372F803AK/AS KMM372F883AK/AS DRAM MODULE KMM372F803AK/AS & KMM372F883AK/AS Fast Page with EDO Mode 8Mx72 DRAM DIMM with ECC based on 8Mx8, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES T h e S a m s u n g K M M 3 7 2 F 8 0 8 3 A is a 8 M b it x 7 2

Contextual Info: • HYUNDAI HYM5V72A404A K-Series Unbuffered 4M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V72A404A is a 4M x 72-bit EDO m ode CMOS DRAM m odule consisting of eighteen HY51V16404A in 24/26 SOJ or TSOP-II and one2048bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.22|iFdecoupling

RSS0

Contextual Info: O K I Semiconductor MSC23B20-XXBS2/PS2 262,144-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC 23B20-xxBS2/D S2 is a fully decoded 262,144-w ord x 36-bit CM OS Dynamic Random Access Memory Module com posed of two 4-Mb DRAM s in SOJ M SM 514280 packages mounted w ith two 0.2 j x F

Contextual Info: WD\ EDI8F3265C ELECTRONIC DESIGNS INC. • High Speed Two Megabit SRAM Module 64Kx32 Static RAM CMOS, High Speed Module Features The EDI8F3265C is a high speed 2 megabit Static RAM module organized as 64Kx32. This module is constructed from eight 64Kx4 Static RAMs in SOJ packages on an

Contextual Info: ADVANCE M T58LC 64K 32/36D 8 64K X 32/36 S Y N C B U R S T SRAM IV IIC Z R O N 64K x 32/36 SRAM +3.3V SUPPLY, PIPELINED, SINGLE-CYCLE DESELECT AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • Fast access tim es: 4 .5 ,5 , 6, 7, 8 and 9ns

Contextual Info: HB56D232BS/SBS Series 2,097,152-Word x 32-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56D232BS/SBS is a 2M x 32 dynamic RAM mod­ ule, mounted 16 pieces of 4 Mbit DRAM HM514400AJ sealed in SOJ package. An outline of the HB56D232BS/ SBS is the 72-pin single in-line package. Therefore, the

ph 4148 zener diode

Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Contextual Info: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS

Contextual Info: •49 YU N D A I HYM5V72A41OA N-Series 4M X 72-bit CMOS DRAM MODULE DESCRIPTION The HYM5V72A410A is a4M x 72-bit Fast page mode CMOS DRAM module consisting of eighteen HY51V17400A in 24/28 pin TSOFMI and two 16-bit BiCMOS line drivers in TSSOP on a 168 pin glass-epoxy printed circuit board.

Contextual Info: 1, 2, 4 MEG X 64 NONBUFFERED DRAM DIMMs M IC R O N DRAM MODULE MT4LD(T 164A(X) MT8LD264A(X) MT16LD464A(X) FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • JEDEC pin-out in a 168-pin, dual in-line memory module (DIMM) • 8MB (1 Meg x 64), 16MB (2 Meg x 64),

IC sn 74 ls 83

Contextual Info: HB56G51232CC-x x S Series 524,288-W ord X 32-Bit H igh Density D ynamic RAM Card Rev.l Dec. 07, 1992 •» H IT A C H I D e sc rip tio n The HB56G51232CC-X XS is a 512KX32 dynamic RAM Card, mounted 4 pieces of 4Mbit DRAM HM51S4800ALTT sealed in TSOP package.

pin diagram for IC 7476

Abstract: MT16D164 RWS300B-15/R
Contextual Info: M ir H D N 1 1 MEG 8 MEGABYTE, 5V, FAST PAGE MODE FEATURES PIN ASSIGNMENT Front View • JE D E C - and industry-standard pinout in a 168-pin, dual-in-line m em ory m odule (D IM M ) • High-performance C M O S silicon-gate process • Single +5V ±10% pow er supply

5 PEN PC TECHNOLOGY advance

Contextual Info: ADVANCE MT2D T 132 B, MT4D232 B, MT8D432 B 1, 2, 4 MEG X 32 BURST EDO DRAM MODULES M IC R O N I rECMNOLOGV NC.- 1, 2, 4 MEG [BURST EDO IDRAM MODULE X 32 4, 8, 16 MEGABYTE, 5V, BURST EDO FEATURES • 72-pin, single-in-line memory modu e (SIM M ) • Burst EDO order, interleave or linea •, programmer by

D014-N

Abstract: parameter hitachi vk 45
Contextual Info: ADE-203-237G Z HM67B3632 Series 32k x 36-bit Synchronous Fast Static RA M with Burst Counter and Self-Tim ed Write Product Preview HITACHI The Hitachi HM 67B3632 is a 1,179,648 bits density high performance synchronous static random access memory organized as 32k x 36 bit. This SRAM is

M53216

Contextual Info: DRAM MODULE KMM53216000A KG K M M 53216000A K G Fast Page M ode 16Mx32 DRAM SIM M , 4K Refresh using 64M DRAM with 400mil G EN ERA L D ESCRIPTIO N FEATURES The Samsung KM M 53216000AKG is a 16M bit x 32 • Part Identification Dynam ic RAM high density m em ory module. The