OPTOISOLATOR B Search Results
OPTOISOLATOR B Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TLP223GA |
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Photorelay (MOSFET output, 1-form-a), 400 V/0.12 A, 5000 Vrms, DIP4 | Datasheet | ||
TLP4590A |
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Photorelay (MOSFET output, 1-form-b), 60 V/1.2 A, 5000 Vrms, DIP6 | Datasheet | ||
TLP170GM |
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Photorelay (MOSFET output, 1-form-a), 350 V/0.11 A, 3750 Vrms, 4pin SO6 | Datasheet | ||
TLP3122A |
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Photorelay (MOSFET output, 1-form-a), 60 V/1.4 A, 3750 Vrms, 4pin SO6 | Datasheet | ||
TLP2304 |
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Photocoupler (photo-IC output), High-speed / IPM driver, 1 Mbps, 3750 Vrms, 5pin SO6 | Datasheet |
OPTOISOLATOR B Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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H11M3
Abstract: H11M4 diODE 1k
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H11M3, H11M4 74bbflSl H11M3 H11M4 diODE 1k | |
Contextual Info: ÖUALITY TECHNOLOGIES C O R P S7E D 7t*bbfi51 Generic Optoisolator Specifications _ DQQijBgfl i l ? • ÚTV GEPS2001 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor 5 203 2 54 K M N - 15 381 R S m illiw atts m illiam ps am pere |
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bbfi51 GEPS2001 EPS2001 50jiA | |
4N29-4N33Contextual Info: 57E J> ÛUALITY TECHNOLOGIES CORP Optoisolator Specifications _ 7MbbfiSl Ü00mi|4 •ÛTY 4N29, 4N29A, 4N30, 4N31, 4N32, 4N32A, 4N33 Optoisolator G aA s Infrared Emitting Diode and N PN Silicon Photo-Darlington Amplifier SY M BO L M IN E |
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4N29A, 4N32A, E51868 0110b 74bbflSl 4N29-4N33 4N29-4N33 | |
340 opto isolatorContextual Info: ÛUALITY TECHNOLOGIES CORP S7E T> Optoisolator Specifications_ 74bbflSl 0004500 44fi I< 3T Y /* H11J1-H11J5 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T he H l 1J series consists o f a gallium arsenide infrared emitting diode |
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74bbflSl H11J1-H11J5 74bbfl51 0DQ4S11 340 opto isolator | |
Contextual Info: ÛUALITY TECHNOLOGIES CORP 57E D Generic Optoisolator Specifications _ 74Lfc>fl51 000432b 344 ÖTY T 'H t- >7 G E3020-G E3023 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T h e GE3020-GE3023 series consists o f a gallium arsen id e, in fra re d em itting |
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74Lfc 000432b E3020-G E3023 GE3020-GE3023 GE3020 GE3021 GE3022 GE3023 | |
mq-7Contextual Info: ÛUALITY TECHNOLOGIES CORP 57E T> 74tbfiSl 0004 n 2 ¿so MQ7 Y Optoisolator Specifications_ H74A1 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor TTL Interface T h e H74A1 provides logic-to-logic optical in terfacin g o f T T L gates |
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H74A1 74tbfiSl H74A1 74S00 500VDC) mq-7 | |
NTE3041Contextual Info: NTE3041 Optoisolator NPN Transistor Output Description: The NTE3041 is an optoisolator in a 6–Lead DIP type package consisting of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. Features: D High Current Transfer Ratio: 100% Min @ Spec Conditions |
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NTE3041 526-NTE3041 NTE3041 | |
on3131
Abstract: ON3131 panasonic dc to dc Optoisolator 20-P ON3132 ON3133 ON3134 PANASONIC ce Series
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ON3131, ON3132, ON3133, ON3134 ON3131 E79920) ON3131 panasonic dc to dc Optoisolator 20-P ON3132 ON3133 ON3134 PANASONIC ce Series | |
GFH600-IIContextual Info: ÛUALITY TECHNOLOGIES CORP 57E » 74fc.bfl51 0 0 0 4 3 3 0 a 75 « f i T Y Generic Optoisolator Specifications _ GFH600 Optoisolator GaAs Solid-State Lamp and NPN Silicon Phototransistor The GFH600 consists of a gallium arsenide, infrared emitting diode coupled with a silicon phototransistor in a |
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bfl51 GFH600 GFH600 D0GM333 GFH600-II | |
Contextual Info: ÛUALITY TECHNOLOGIES CORP S7E ]> Optoisolator Specifications _ 74 b b fl S l OOOm^tf 0E3 • û T Y / ' V / - ,-P 7 H74C1, H74C2 Optoisolator GaAs Infrared Emitting Diode and Light Activated SCR TTL Interface M IL L IM E T E R S SYMBOL A T h e H74C1 a n d H74C2 are gallium arsen id e in frared |
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H74C1, H74C2 H74C1 H74C2 74HOO 74S00 2250VIR | |
A 3131 ICContextual Info: Panasonic O p to iso la to rs ON3131, ON3132, ON3133, ON3134 O ptoisolators U nit : mm • Outline ON3131 is a DIL type 4-pin single-channel optoisolator which is housed in a small package. This optoisolator series also includes the tw o-channel O N 3132, the th ree-ch an n el O N 3133, and the fourchannel 3134. |
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ON3131, ON3132, ON3133, ON3134 ON3131 E79920) A 3131 IC | |
hcpl2630
Abstract: hcpl-2630 D2969
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HCPL2630 D2969, E65085 hcpl-2630 D2969 | |
Contextual Info: ÛUALITY TECHNOLOGIES CORP S7E D 7HbbflSl G004334 410 •IflTY Generic Optoisolator Specifications _ GFH601 Optoisolator G aAs Solid-State Lamp and NPN Silicon Phototransistor T h e GFH601 consists o f a gallium arsen id e, in frared em itting d io d e co u p led with a silicon p h o to tra n sisto r in a |
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G004334 GFH601 GFH601 74bbfl51 QQG4337 | |
Opto-isolatorContextual Info: 3UALITY TECHNOLOGIES CORP S7E 3 7 MbbflS1 0 0 0 4 3 M2 ST7 H i 0 TV Generic Optoisolator Specifications_ MCS21, MCS2401 Optoisolator GaAs Infrared Emitting Diode and Light Activated SCR T h e M CS21 a n d M CS2401 c o n s is t o f a g a lliu m a rs e n id e , |
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MCS21, MCS2401 CS2401 0GG4343 Opto-isolator | |
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MOC119Contextual Info: MOTOROLA Order this document by MOC119/D SEMICONDUCTOR TECHNICAL DATA GlobalOptoisolator MOC119 6-Pin DIP Optoisolator Darlington Output No Base Connection [CTR = 300% Min] The MOC119 device consists of a gallium arsenide infrared emitting diode optically |
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MOC119/D MOC119 MOC119 MOC119/D* | |
motorola 1N914 diode datasheet
Abstract: regulation using optoisolator feedback 1N914 transistor data sheet free download MHPM6B15A60D 1n914 detector diode 1N914 HCPL0453 MBR160 MC33153 MUR1100E
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HCPL0453/D HCPL0453 motorola 1N914 diode datasheet regulation using optoisolator feedback 1N914 transistor data sheet free download MHPM6B15A60D 1n914 detector diode 1N914 HCPL0453 MBR160 MC33153 MUR1100E | |
flyback transformer for medical
Abstract: LPE-4841-A flyback transformer design MBR0540LT 240 AC to 12V AC transformer circuit diagram 240 AC to 12V dc transformer 9V 1A Transformer specification Snubber circuits theory, design and application LPE-4841-A307 pulse transformer wind 400 v
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LT1425 285kHz 16-Pin LT1105 200kbps LT1170/71/72 LT1372/77 500kHz/1MHz LT1424 flyback transformer for medical LPE-4841-A flyback transformer design MBR0540LT 240 AC to 12V AC transformer circuit diagram 240 AC to 12V dc transformer 9V 1A Transformer specification Snubber circuits theory, design and application LPE-4841-A307 pulse transformer wind 400 v | |
Contextual Info: u n _ m m TECHNOLOGY s » Isolated F lyback S w itching R egulator KfìTUlKS DCSCRIPTIOn • No Transformer “Third Winding” or Optoisolator Required ■ ±5% Accurate Output Voltage Without User Trims See Circuit Below |
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285kHz 16-Pin LT1105 200kbps LT1170/71/72 LT1372/77 500kHz/1 LT1424 LT1425 1425fa | |
Contextual Info: LT1425 Isolated Flyback Switching Regulator FEATURES • ■ ■ ■ ■ ■ ■ U ■ DESCRIPTION No Transformer “Third Winding” or Optoisolator Required ±5% Accurate Output Voltage Without User Trims See Circuit Below Resistor Programmable Output Voltage |
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LT1425 285kHz 16-Pin LT1105 200kbps LT1170/71/72 LT1372/77 500kHz/1MHz LT1424 | |
PA0815
Abstract: UPS Telecom IT HAT2165H FCX491A FDC2512 LTC3706 LTC3725 PA1294 Si7450DP ltc3705 transformer
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LTC3706 LTC3725 LTC3725 LTC3706 dn377f PA0815 UPS Telecom IT HAT2165H FCX491A FDC2512 PA1294 Si7450DP ltc3705 transformer | |
7500 IC 14 PIN
Abstract: MTIL117
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MTIL117/D MTIL117 MTIL117 7500 IC 14 PIN | |
Infrared Emitting DiodesContextual Info: 25E D KODENSHI CORP 5242bOfi QQQ0D23 4 • -p-lf-f- EMITTERS B T-11-13 APPLICATION: Remote Control/Optical Switch/Optoisolator/ Chopper/Pattern Recognition INFRARED EM ITTING DIODES GaAs) (Ta=25°C) Absolute maximum Ratings Type No. lF(mA) Vr(V) P(mW) Topr.fC) |
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5242bOfi QQQ0D23 T-11-13 EL-23F Infrared Emitting Diodes | |
diode kv 1236
Abstract: marking c7 sot-23-5 2SC4431 c5 mark sot 8e9 marking
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SC4431 SC431L SC4431 OT-23- ECN00 diode kv 1236 marking c7 sot-23-5 2SC4431 c5 mark sot 8e9 marking | |
NTE3044
Abstract: optoisolator NPN Darlington transistor
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NTE3044 NTE3044 optoisolator NPN Darlington transistor |