OPTOISOLATOR B Search Results

8PIN optocoupler 601

Abstract: HCPL 601
Contextual Info: 1 Chapter 1. Introduction 1.1 Optoisolator Safety Standards and Regulatory Environment Optoisolator applications often include environments where high voltages are present. The ability of the optoisolator or optocoupler to sustain and to isolate high voltages, both transient as well as

NTE3047

Abstract: Optoisolator Triac Driver 7500VAC optoisolator nte3047 Optoisolator triac triggering
Contextual Info: NTE3047 Optoisolator TRIAC Driver Output Description: The NTE3047 optoisolator consists of a gallium arsenide infrared emitting diode, optically coupled to a silicon bilateral switch and is designed for applications requiring isolated TRIAC triggering, low

IEC 1010-1 General Safety Requirements

Abstract: iec 601.1 optoisolator Optoisolators HP optocoupler optocoupler HP OPTO-ISOLATOR HP opto-isolator
Contextual Info: Table of Contents Chapter 1 Introduction 1.1 Optoisolator Safety Standards and Regulatory Environment . 1 1.2 Hewlett-Packard Optoisolator Safety Standards Information . 2

H11M3

Abstract: H11M4 diODE 1k
Contextual Info: ÖUALITY TECHNOLOGIES CORP S7E D Optoisolator Specifications. b * i 0 • H11M3, H11M4 Optoisolator GaAIAs Infrared Emitting Diode and Light Activated SCR The HI 1M3 and HI 1M4 contain a gallhim-aluminum-arsenide, infrared emitting diode coupled to a unique high voltage silicon controlled

Contextual Info: ÖUALITY TECHNOLOGIES C O R P S7E D 7t*bbfi51 Generic Optoisolator Specifications _ DQQijBgfl i l ? • ÚTV GEPS2001 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor 5 203 2 54 K M N - 15 381 R S m illiw atts m illiam ps am pere

4N29-4N33

Contextual Info: 57E J> ÛUALITY TECHNOLOGIES CORP Optoisolator Specifications _ 7MbbfiSl Ü00mi|4 •ÛTY 4N29, 4N29A, 4N30, 4N31, 4N32, 4N32A, 4N33 Optoisolator G aA s Infrared Emitting Diode and N PN Silicon Photo-Darlington Amplifier SY M BO L M IN E

H11K1

Abstract: H11K
Contextual Info: Optoisolator Specifications H11K1, H11K2 Optoisolator GaAIAs Infrared Emitting Diode and Two NPN Silicon Photo-Darlington Amplifiers T h e H I IK series consists o f a gallium -alum inum -arsenide, infrared em itting diode coupled with two high voltage silicon Darlingtonconnected phocotransistors which have integral base-emitter resistors

Contextual Info: ÛUALITY TECHNOLOGIES CORP S7E D • 74hLiB51 GOOMlRb TTb Optoisolator Specifications _ H11D1-H11D4 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon High Voltage Phototransistor * m il l im e t e r SYMBOL' A B C D «C ü T IK in

Photocell

Abstract: ir led datasheet optoisolator olufsen "photocell" 011 ir led bang and olufsen NSL-32 NSL-32-020 bang olufsen
Contextual Info: NSL-32-020 Bang & Olufsen / Denmark Optoisolator Features • • • 5.7 min. Compact, moisture resistant package Low LED current Passive resistance output 25.4 min. Photocell 2.54 Anode lead 0.25 x 0.51 LED + Description This optoisolator consists of an LED input optically

moc3020 triac driver

Abstract: MOC302I M0c3020-M0c3023 OPTOISOLATOR TRIAC DRIVER
Contextual Info: Optoisolator Specifications M 0c3020-M 0c3023 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T h e M O C3020-M CC3023 series consists o f a gallium arsenide, in fra re d em itting diode coupled with a light activated silicon bilateral switch,

Contextual Info: Optoisolator Specifications H11G3 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Darlington Connected Phototransistor T h e H U G series consists o f a gallium arsenide, infrared em itting diode coupled with a silicon Darlington-connected phototransistor which has an integral base-emitter resistor to

nte3095

Abstract: ir led PHOTODIODE
Contextual Info: NTE3095 Optoisolator Description: The NTE3095 is a dual photocoupler optoisolator in an 8–Lead DIP type package consisting of a pair of Gallium Aluminum Arsenide light emitting diodes and integrated photodetectors. Separate connections for the photodiode bias and output transistor collectors improve the speed up to a hundred

340 opto isolator

Contextual Info: ÛUALITY TECHNOLOGIES CORP S7E T> Optoisolator Specifications_ 74bbflSl 0004500 44fi I< 3T Y /* H11J1-H11J5 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T he H l 1J series consists o f a gallium arsenide infrared emitting diode

NTE3097

Abstract: Optoisolator Triac Driver
Contextual Info: NTE3097 Optoisolator Zero Crossing TRIAC Driver Description: The NTE3097 is an optoisolator in a 6–Lead DIP type package and contains a gallium arsenide IRED optically coupled to a monolithic silicon detector performing the function of a Zero Voltage Crossing

1AV3A

Contextual Info: Ö U AL IT Y TECHNOLOGIES CORP S7E P 74bbfl51 0 0 0 4 1 7 b OOfl • ö T Y Optoisolator Specifications_ H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor The HI 1AV series consists o f a gallium arsenide, infrared emitting

1J2H

Contextual Info: Optoisolator Specifications H11J1-H11J5 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T h e H l 1J series consists o f a gallium a rse n id e in fra re d em itting diode co upled with a light activated silicon bilateral switch, w hich functions

NTE3087

Contextual Info: NTE3087 Optoisolator High Speed, Open Collector, NAND Gate Output Description: The NTE3087 is an optoisolator which combines a GaAsP LED as the emitter and an integrated high gain multi–stage high speed photodetector. The output of the detector circuit is an open collector,

Contextual Info: 3UALITY T E C H N O L O G I E S CORP S7E VMbhflSl OGOMEGfc, b ?S • Ö T V T> Optoisolator Specifications_ H11G45, H11G46 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Darlington Connected Phototransistor T h e H 11G series consists o f a gallium arsenide, infrared

Contextual Info: ÛUALITY TECHNOLOGIES CORP 57E D Generic Optoisolator Specifications _ 74Lfc>fl51 000432b 344 ÖTY T 'H t- >7 G E3020-G E3023 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T h e GE3020-GE3023 series consists o f a gallium arsen id e, in fra re d em itting

mq-7

Contextual Info: ÛUALITY TECHNOLOGIES CORP 57E T> 74tbfiSl 0004 n 2 ¿so MQ7 Y Optoisolator Specifications_ H74A1 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor TTL Interface T h e H74A1 provides logic-to-logic optical in terfacin g o f T T L gates

NTE3041

Contextual Info: NTE3041 Optoisolator NPN Transistor Output Description: The NTE3041 is an optoisolator in a 6–Lead DIP type package consisting of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. Features: D High Current Transfer Ratio: 100% Min @ Spec Conditions

NTE3041

Contextual Info: NTE3041 Optoisolator NPN Transistor Output Description: The NTE3041 is an optoisolator in a 6–Lead DIP type package consisting of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. Features: D High Current Transfer Ratio: 100% Min @ Spec Conditions

Contextual Info: Optoisolator Specifications H11B255 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Photo-Darlington Amplifier The H ] IB255 consists o f a gallium arsenide infrared em itting diode coupled with a silicon photo-Darlington amplifier in a dual in-line package. This device is also

on3131

Abstract: ON3131 panasonic dc to dc Optoisolator 20-P ON3132 ON3133 ON3134 PANASONIC ce Series
Contextual Info: Panasonic ON3131, ON3132, ON3133, ON3134 Optoisolators O ptoisolators U nit : mm • Outline ON3131 is a DIL type 4-pin single-channel optoisolator which is housed in a small package. This optoisolator series also includes the tw o-channel O N 3132, the three-channel O N 3133, and the fourchannel 3134.