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OPTO801 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 243-339801-000 MICROELECTRONICS InGaAs Avalanche Photodiode 200 um Description Based on an industry proven design and improved for fast overload recovery, this InGaAs APDs has a high QE Quantum Efficiency over the band of 1000 to 1600 nm. The APD’s junction offers more than 1dB optical sensitivity |
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25Maximum RF-38 Opto801 |