OPTO THYRISTOR GATE Search Results

toshiba SF50G13

Abstract: SF50G13 sf50l13 SF50J13 SF50D13 SF50Q13 S4006 SF50F13 SF50N13 tc 5070 toshiba
Contextual Info: 9097250 TOSHIBA DISCRETE/OPTO D~J-¿LS" 11 39C 02 276 PHASE CONTROL THYRISTOR TOSHIBA 3T O ISCRETE/OPTO} 1200V SF50Q13 De | TOTTESO DODHETb 50A ELECTRICAL CHARACTERISTICS SYMBOL CH A RA C TERISTIC Repetitive Peak Off-State Current I drm and V drm= V rrm = Rated

CA-125C

Contextual Info: 9097250 TOSHIBA <DISCRETE/OPTO I ". 39C 02320 0 T c<Äc5'“/-5T' BI-DIRECTIONAL TRIODE THYRISTOR TRIAC) TOSHIBA OISCRETE/OPTO} SM 16G 14 il DE | TDTTaSD 0 M E 3 5 0 400V 16 A ¿25.0M *. ¿gl.O M ax. MAXIMUM RATINGS CH A RA CTERISTIC Repetitive Peak SM16D14

2N4991

Abstract: 2N4992 MBS4992
Contextual Info: MOT OR OL A M SC 34 -CDIODES/OPTO 6367255 MOTOROLA SC DËT|b3b7E5S DIODES/OPTO 34C SILICON THYRISTOR DIE (continued) DD3A1S1 38151 T " ' ^ •$’ ' °J 2C4991 DIE NO. LINE SOURCE — DTL71 Device assembled from this die type are similar to the fol­ lowing device types:

thyristor T10

Abstract: triac phase control 1S2093 opto triac SCR TRIGGER circuit Thyristor triac Phase Control Circuit VB01 thyristor T10-25
Contextual Info: T O S H I B A -CDISCRETE/OPTO} 9097250 T O S H IB A dFI'ìottsso doo^bos i 1 ” ~w? DISCRETE/OPTO 67C 0 9 3 0 5 £ Silicon Planar Type 1S2093 Trigger Diode THYRISTOR, TRIAC TRIGGER APPLICATIONS. Unit in mm FEATURES: . A symmetrial negative resistance characteristics in

OPTO TRIAC 1200v

Abstract: OPTO thyristor gate TOSHIBA THYRISTOR
Contextual Info: 9097250 TOSHIBA DISCRETE/OPTO 39 C 0 2 3 2 5 0 7 ^ 2 .5 -/^ BI-DIRECTIONAL TRIODE THYRISTOR (TRIAC) 3 TOSHIBA {DISCRETE/OPTO} SM150Q13 ~ Ì DE~| T O T V S S O 0 D D 53 SS 5 Unit in mm 1200V 150A MAXIMUM RATINGS CH ARACTERISTIC SYM BOL RATING SM150G13 400

628-400

Abstract: X103
Contextual Info: 9097250 T OS HI BA 39C 0 2 3 0 9 DISCRETE/OPTO DT-af'/*? HIGH-SPEED THYRISTOR TOSHIBA {DISCR ET E/OPTO! SH40ÖR26B 3T DE I ^0^7250 0GDE30T 4 J Unit in mm 1300V 400A MAXIMUM RATINGS CHARACTERISTIC SYMBOL Repetitive Peak Off-State Voltage Vdrm and and Repetitive Peak Reverse Voltage Vrrm

Triac 2N5444

Abstract: MAC50 2N5446 triac Motorola
Contextual Info: MOTOROLA SC Í DI ODES/OPTO} i 6 3 6 7 2 5 5 MOTOROLA SC "34 ÍF|t,3b7SSS DD3aiSW 7 |"~ DI ODES/ OPTO 34C 3 8 15 4 7^ 2- 5" - SILICON THYRISTOR DIE (continued) / 7 2C5446 CHIP NO. UNE SOURCE — DTL0440 Device assembled from this die type are similar to or

Contextual Info: TOSHIBA {DISCRETE/OPTO} ^ 9097250 TOSHIBA <DISCRETE/OPTO D E f TOTTBSO 00174Ö0 1 | 99D 17480 D T-W-Z7 TLP6 I IJ GaAs I RED & P H O T O - T H Y R I STOR The TOSHIBA TLP611J consists of a photo­ thyristor connected inverse parallel optically coupled to a gallium arsenide infrared emitt­

SF16G14

Abstract: sf16d14 110A1 SF16B14 AC42C sf16d TOSHIBA THYRISTOR OPTO thyristor gate
Contextual Info: 9097250 TOSHIBA 39C DISCRETE/OPTO "F -âS '-'/S ' PHASE CONTROL THYRISTOR TOSHIBA {DISCRETE/OPTO} De I ^ O T T E S O 3 e] 0002273 1 16A 400V SF16G14 0227 3 Unit in ma ÿ2S.0Mix. MAXIMUM RATINGS C H A R A C T E R IS T IC Repetitive Peak SF 16B 14 Off-State Voltage

SH100G21A

Abstract: SH100G RG102 SH100D21A SH100F21A SH100J21A SH100L21A TOSHIBA THYRISTOR
Contextual Info: 9097250 TOSHIBA DISCRETE/OPTO 39C 02300 HIGH-SPEED THYRISTOR TOSHIBA {DISCRETE/OPTO} SH100L21A 800V 100A 2 - ¿ 4 ± 0 .2 MAXIMUM RATINGS SYM BOL R A T IN G C H A R A C T E R IS T IC SH100D21A 200 Repetitive Peak 300 O ff-State Voltage SH100F21A V drm and Repetitive

SM30G12

Abstract: d2323 SM30D12 TOSHIBA THYRISTOR
Contextual Info: 9097250 T O S H I B A DISCRETE/OPTO 39C 0 2 3 2 3 D 7"-<ajTW7 BI-DIRECTIONAL TRIODE THYRISTOR (TRIAC) DEI-ÎGT725D □□D2323 T TOSHIBA {D IS CR ETE/OPTO} 5M30G12 30A 450V 8MAX. MAXIMUM RATINGS SY M B O L C H A R A C T E R IS T IC Repetitive Peak Off-State Voltage

SF2D41

Abstract: TF011 SF2G41 SF-2D41 SF2B41 SF2J41 TOSHIBA THYRISTOR TLMS1
Contextual Info: 9097250 TOSHIBA 3V L CDISCRETE/OPTO U ¿ ¿ t> ô Ü - fZ ~ ¿ 5 ^ -/3 PHASE CONTROL THYRISTOR 3T TOSHIBA {D IS CR ETE/OPTO} SF2J41 600V » F | c1 0 ti 7 S S 0 ODGEEbB t H I “ in mm I 2A MAXIMUM RATINGS SYM BOL C H A RA CTER ISTIC UNIT RATING 100 R epetitive Peak

4b2h

Abstract: TOSHIBA THYRISTOR
Contextual Info: 9097250 TOSHIBA DISCRETE/OPTO 39C 0 2348 0 7^ Ö [ ~ z j THYRISTOR STACK (FLAT PACKAGE THYRISTOR STACK FOR RESISTANCE WELDING) 3 e! DEj l O T ? 2 5 D 0 0 0 5 3 4 0 3 | BW4B-2H C TYPE 12 CW4B-2H 14 12 14 ' DW4B-2H 12 14 ! EW4B-2H 12 14 : 12 FW4B-2H 14 CODING )

reverse-conducting thyristor

Abstract: SHR300J23
Contextual Info: 9097250 TOSHIBA DISCRETE/OPTO D'T-SS"^ • 39C 02327 REVERSE-CONDUCTING THYRISTOR TOSHIBA -CDISCRETE/OPTO} SHR300J23 600V i> F | 1 0 ^ 7 5 5 0 0 0 0 5 3 5 7 b 300A Unit in un MAXIMUM RATINGS C H A R A C T E R IS T IC 2 -0 4 .0 + 0 .2 SY M B O L Repetitive Peak Off-State Voltage

2N4213

Abstract: 2N4214 2N4216 2N4219 anode gate thyristor motorola reverse blocking triode thyristor OPTO thyristor gate
Contextual Info: MOTOROLA SC •£DI OD E S/OPTO} ÔÏ DE | b3b7ESS DDTfllha 7 -// 2N4213 thru 2N4219 S ilic o n Controlled Rectifiers Reverse B lockin g Triode Thyristor . . . all diffused PNPN devices designed fo r operation in mA/juA signal o r detection circuits. • •

convert 230V AC to 5V DC

Abstract: thyristor firing circuit scr firing circuit protection circuit triac burst firing circuit BS7671 X10213 X10229 X10255 marking Z4 marking Z2
Contextual Info: LTM LOGIC TRIGGER MODULE X10320 INTRODUCTION This logic driven trigger module gives zero crossing opto-isolated control to convert on/off signals into power, via inverse parallel thyristor or triac. It can accept a wide range of signals from TTL, CMOS TM devices, processor or fast cycling instrument sources. Unique MONO-LINK feature gives hard gate

sf150j15

Abstract: SF150G15 SF-150 TOSHIBA THYRISTOR
Contextual Info: 9097250 TOSHIBA DISCRETE/OPTO 39C 02281 D “7^«a5-/9 PHASE CONTROL THYRISTOR » e | TD'iVESD 0D0a2ñl Û | TOSHIBA ÍDISCRETE/0PT0} U n it in mm SF150J15 600V 150A MAXIMUM RATINGS C H A R A C T E R IS T IC Repetitive Peak O ff-State Voltage SF150G 15

SF800J26

Abstract: SF800R26 SF800U26 SF800L26 SF800N26 X103
Contextual Info: 1 i T d e | ' î ü c1755D TOSHIBA -CDISCRETE/OPTOï □□□a2û‘î 2 | _7"-<2>5 ‘-a .Ö PHASE CONTROL THYRISTOR SF800U26 Unit in mm 1600V 800A MAXIMUM RATINGS CH A R A C TER ISTIC SF800J26 Repetitive Peak SF800L26 Off-State Voltage and Repetitive SF800N26

AC15A

Abstract: TRIAC FT 12 thyristor FT 12 2N5570 triac Motorola Discrete Thyristor Chip 2N5571
Contextual Info: MOTOROLA SC i DIODES/O PTO ï 6367255 MOTOROLA SC 34 D E § b3t>7555 0030155 1 DIODES/OPTO 34C 38155 T * SILICON THYRISTOR DIE (continued) 2 s'-z'dr 2C5574 CHIP NO. LINE SOURCE — DTL0420 Device assembled from this die type are similar to or better than the following device types:

SFOR3G42

Abstract: SFOR3B42 SFOR3D42 SFOR3J42 I-RTAX 02261 SF0R3J42 SF0R3 TOSHIBA THYRISTOR sfor3g
Contextual Info: 9097250 TOSHIBA - ¿ t w n n Goossbi a | SF0R3J42 600V O T - SS"- &=> 39C 02 261 DISCRETE/OPTO PHASE CONTROL THYRISTOR Unit in mm 0.3A (65.1MAX. MAXIMUM RATINGS C H A R A C T ER IST IC SYM BOL 100 R epetitive Peak O ff-State Voltage SFOR3D42 and Repetitive

SF30Q13

Abstract: SF30F13 SF30D13 SF30G13 SF30L13 SF30N13 ac56 TOSHIBA THYRISTOR OPTO thyristor gate
Contextual Info: 9097250 TOSHIBA 39C 02275 <D I S C R E T E / O P T O PHASE CONTROL THYRISTOR »F| ^ 7 3 5 0 TOSHIBA {DISCRETE/OPTO} SF30Q13 Unit in n n DD0S57S 1200V 30A MAXIMUM RATINGS C H A R A C TER ISTIC SF30D13 Repetitive Peak SF30F13 Off-State Voltage SF30G13 and Repetitive

SCR 2N6399

Abstract: 2n6397 scr SCR 2N6397 2n6397 scr 2n6396 2N6397 MOTOROLA 2N6398 2C6399 2N6396 motorola opto scr
Contextual Info: 34 MOTOROLA SC Í D I O D E S / O P T O 6367255 MOTOROLA SC D e | b3t,7ESS 003fllb0 S | DIODES/OPTO 34C 38160 D SILICON THYRISTOR DIE (continued) 2C6399 CHIP NO. LINE SOURCE — DTL0310 Device assembled from this die type are similar to or better than the following device types:

triac phase control

Abstract: thyristor T10 max3650 Phase Control Circuit TOSHIBA THYRISTOR 01AG 1s2093
Contextual Info: w? D E j ^ ^ a s a DDCHBOS i "|~ TOSHIBA { DI SC RE TE/O PT O} 9097250 TOSHIBA D I S C R E T E / OPTO 67C 0 9 3 0 5 £ Silicon Planar Type 1S2093 Trigger Diode THYRISTOR, TRIAC TRIGGER APPLICATIONS. Unit in mm FEATURES: . A symmetrial negative resistance characteristics in

SM30G11

Abstract: SM30D11 AL-56 TOSHIBA THYRISTOR TCH75SD al56
Contextual Info: 9097250 TOSHIBA 3 9 c V*'* D IS C R E T E /OPTO D T~ 2.5~-/7 BI-DIRECTIONAL TRIODE THYRISTOR (TRIAC) TOSHIBA -CDISCRETE/0PT03450V 30A in SM30G11 DE | TCH75SD 00Da3S2 7 Unit in um MAXIMUM RATINGS SYM BOL CH A RA C TERISTIC SM30D11 Repetitive Peak Off-State Voltage SM30G11 V drm