OPTIMOS TRANSISTOR Search Results

OPTIMOS TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

OPTIMOS TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
OPTIMOS Abstract: OPTIMOS TRANSISTOR TO220 package infineon 13mOhm bts1205 ANPS062E Application Report mosfet ptc fuel level sensor Contextual Info: Application Note, V 1.0, August 2001 ANPS062E Product News OptiMOS ✚  state of the art field effect transistor switches offering new features by Christian Arndt Automotive Power Never stop -1- thinking. ANPS062E OptiMOS✚ - temperature sensing MOSFET switch	Original	ANPS062E OPTIMOS OPTIMOS TRANSISTOR TO220 package infineon 13mOhm bts1205 ANPS062E Application Report mosfet ptc fuel level sensor	PDF
Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª5Power-Transistor,80V BSZ075N08NS5 DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSª5Power-Transistor,80V BSZ075N08NS5 1Description TSDSON-8FL enlarged source interconnection	Original	BSZ075N08NS5 IEC61249-2-21	PDF
IPP023N10N5 Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª5Power-Transistor,100V IPP023N10N5 DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSª5Power-Transistor,100V IPP023N10N5 1Description TO-220-3 tab Features	Original	IPP023N10N5 O-220-3 IPP023N10N5	PDF
Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª5Power-Transistor,80V BSZ110N08NS5 DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSª5Power-Transistor,80V BSZ110N08NS5 1Description TSDSON-8FL enlarged source interconnection	Original	BSZ110N08NS5 IEC61249-2-21	PDF
Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª5Power-Transistor,80V IPP020N08N5 DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSª5Power-Transistor,80V IPP020N08N5 1Description TO-220-3 tab Features	Original	IPP020N08N5 O-220-3 IEC61249-2-21	PDF
Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª5Power-Transistor,100V IPB020N10N5 DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSª5Power-Transistor,100V IPB020N10N5 1Description D²PAK Features •N-channel,normallevel	Original	IPB020N10N5	PDF
Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª3Power-Transistor,150V IPT059N15N3 DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSª3Power-Transistor,150V IPT059N15N3 1Description HSOF Features Tab •N-channel,normallevel	Original	IPT059N15N3 IEC61249-2-21	PDF
Contextual Info: BSL308C OptiMOS P3 + Optimos™ 2 Small Signal Transistor Product Summary Features • Complementary P + N channel · Enhancement mode VDS · Logic level 4.5V rated RDS(on),max · Avalanche rated P N -30 30 V VGS=±10 V 80 57 mW VGS=±4.5 V 130 93 -2.0	Original	BSL308C IEC61249-2-21 H6327:	PDF
Contextual Info: BSD235C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V VGS=±4.5 V 1200 350 mΩ VGS=±2.5 V 2100 600 -0.53 0.95 • Complementary P + N channel · Enhancement mode VDS · Super Logic level 2.5V rated RDS(on),max	Original	BSD235C PG-SOT-363 IEC61249-2-21 H6327:	PDF
Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª3Power-Transistor,40V IPA041N04NG DataSheet Rev.2.0 Final PowerManagement&Multimarket OptiMOSª3Power-Transistor,40V IPA041N04NG 1Description TO-220-FP Features •OptimizedtechnologyforDC/DCconverters	Original	IPA041N04N O-220-FP IEC61249-2-21	PDF
BSD235C Abstract: marking GS4 sot D053 BSD235 BSD235C H6327 Contextual Info: BSD235C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V VGS=±4.5 V 1200 350 mΩ VGS=±2.5 V 2100 600 -0.53 0.95 • Complementary P + N channel · Enhancement mode VDS · Super Logic level 2.5V rated RDS(on),max	Original	BSD235C IEC61249-2-21 PG-SOT-363 H6327: BSD235C marking GS4 sot D053 BSD235 BSD235C H6327	PDF
Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª5Power-Transistor,80V IPB017N08N5 DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSª5Power-Transistor,80V IPB017N08N5 1Description D²PAK Features •Idealforhighfrequencyswitchingandsync.rec.	Original	IPB017N08N5 IEC61249-2-21	PDF
F-053 Abstract: PG-SOT-363 BSD235C L6327 Contextual Info: BSD235C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V VGS=±4.5 V 1200 350 mW VGS=±2.5 V 2100 600 -0.53 0.95 • Complementary P + N channel · Enhancement mode VDS · Super Logic level 2.5V rated RDS(on),max	Original	BSD235C IEC61249-2-21 PG-SOT-363 L6327: F-053 PG-SOT-363 BSD235C L6327	PDF
Contextual Info: BSD235C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V V GS=±4.5 V 1200 350 mΩ V GS=±2.5 V 2100 600 -0.53 0.95 • Complementary P + N channel V DS · Enhancement mode R DS on ,max · Super Logic level (2.5V rated)	Original	BSD235C IEC61249-2-21 PG-SOT-363 L6327:	PDF

d51 av Contextual Info: BSZ15DC02KD H OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V VGS=±4.5 V 150 55 mW VGS=±2.5 V 310 95 -3.2 5.1 • Complementary P + N channel · Enhancement mode VDS · Super Logic level 2.5V rated RDS(on),max	Original	BSZ15DC02KD IEC61246-21 15DC02KD d51 av	PDF
BSL215C Abstract: HLG09283 L6327 Contextual Info: BSL215C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V V GS=±4.5 V 150 140 mΩ V GS=±2.5 V 280 250 -1.5 1.5 • Complementary P + N channel V DS · Enhancement mode R DS on ,max · Super Logic level (2.5V rated)	Original	BSL215C L6327: BSL215C HLG09283 L6327	PDF
BSL215C Abstract: HLG09283 L6327 Contextual Info: BSL215C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V V GS=±4.5 V 150 140 mΩ V GS=±2.5 V 280 250 -1.5 1.5 • Complementary P + N channel V DS · Enhancement mode R DS on ,max · Super Logic level (2.5V rated)	Original	BSL215C L6327: BSL215C HLG09283 L6327	PDF
BSL215C Contextual Info: BSL215C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V VGS=±4.5 V 150 140 mW VGS=±2.5 V 280 250 -1.5 1.5 • Complementary P + N channel VDS · Enhancement mode RDS on ,max · Super Logic level (2.5V rated) · Avalanche rated	Original	BSL215C IEC61249-2-21 H6327: BSL215C	PDF
BSL316C Abstract: HLG09283 L6327 Contextual Info: BSL316C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features • Complementary P + N channel P N -30 30 V V GS=±10 V 150 160 mΩ V GS=±4.5 V 270 280 -1.5 1.4 V DS · Enhancement mode R DS on ,max · Logic level (4.5V rated) · Avalanche rated	Original	BSL316C L6327: BSL316C HLG09283 L6327	PDF
Contextual Info: BSL316C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -30 30 V VGS=±10 V 150 160 mW VGS=±4.5 V 270 280 -1.5 1.4 • Complementary P + N channel VDS · Enhancement mode RDS on ,max · Logic level (4.5V rated) · Avalanche rated	Original	BSL316C IEC61249-2-21 H6327:	PDF
Contextual Info: BSL316C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -30 30 V VGS=±10 V 150 160 mW VGS=±4.5 V 270 280 -1.5 1.4 • Complementary P + N channel VDS · Enhancement mode RDS on ,max · Logic level (4.5V rated) · Avalanche rated	Original	BSL316C IEC61249-2-21 H6327:	PDF
BSD235C Abstract: L6327 BSD235 F-053 Contextual Info: BSD235C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features • Complementary P + N channel P N -20 20 V V GS=±4.5 V 1200 350 mΩ V GS=±2.5 V 2100 600 -0.53 0.95 V DS · Enhancement mode R DS on ,max · Super Logic level (2.5V rated)	Original	BSD235C PG-SOT-363 L6327: BSD235C L6327 BSD235 F-053	PDF
Contextual Info: BSD235C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V V GS=±4.5 V 2100 600 mΩ V GS=±2.5 V 1200 350 -0.53 0.95 • Complementary P + N channel V DS · Enhancement mode R DS on ,max · Super Logic level (2.5V rated)	Original	BSD235C PG-SOT363 L6327:	PDF
BSL308C Abstract: HLG09283 L6327 Contextual Info: BSL308C OptiMOS P3 + Optimos™ 2 Small Signal Transistor Product Summary Features P N -30 30 V V GS=±10 V 80 57 mΩ V GS=±4.5 V 130 93 -2.0 2.3 • Complementary P + N channel · Enhancement mode V DS · Logic level 4.5V rated R DS(on),max · Avalanche rated	Original	BSL308C L6327: BSL308C HLG09283 L6327	PDF

OPTIMOS TRANSISTOR Search Results

OPTIMOS TRANSISTOR Result Highlights (5)

OPTIMOS TRANSISTOR Datasheets Context Search

OPTIMOS

IPP023N10N5

BSD235C

F-053

d51 av

BSL215C

BSL215C

BSL215C

BSL316C

BSD235C

BSL308C