OPNEXT JAPAN Search Results

TRF5916

Abstract: opnext SFP TRF5926 TRV5013 TRV50 trf5925 RCV5905AN opnext trv5020 STM-64 IR
Contextual Info: All rights reserved OPTICALENGINES 2002 OpNext, Inc. Optical Engines powering next generation networks OpNext provides the optical engines that light In today’s market, customers demand a high level of collaboration to optimize the performance, the reliability, and the cost of systems. OpNext

laser diode 940 nM 200mW

Abstract: LD5033 80km* opnext ps7055 LE7062 laser DFB chip 1310nm 2.5G LB7962 10G APD chip HL6530MG Photodiode, 1550nm, butterfly package
Contextual Info: opnext 2005 / 2006 HITACHI OPTODEVICES Powered by opnext Powered by HITACHI Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, Opnext offers unique leading-edge optodevices in such areas as fiber optic communications, optical storage, and measuring instruments and encoders. Constant refinement of established technologies offer cutting-edge solutions to a wide variety of needs, providing the power to reshape our world and

TR6143

Abstract: advantest TR6143 opnext laser diode HP6655A apc driver for laser diode DESIGN AC VOLTMETER USING TWO DIODE Tektronix TDS 460A manual LDC-3722B infrared laser diode AM503
Contextual Info: ODE-608-001B Z Opnext Laser Diodes Surge Damage Prevention Manual Cautions 1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. OPJ bears no responsibility

opnext

Abstract: laser diode DVD 100mw opnext laser diode 660nm 100mw HL6348MG HL1357CP HL1511AF HL1513AF HL6314MG 1310nm fp 10g
Contextual Info: Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, with a focus on quality optical technologies, Opnext offers unique leading edge optodevices in such areas as fiber-optic communications, optical storage, and measuring

opnext

Abstract: HL1359CP laser diode bare chip 1550 DFB laser bare die HL1357CP HL1511AF HL1513AF laser diode for optical communication Laser Diode 1550 nm dBm dfb 10g
Contextual Info: Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, with a focus on quality optical technologies, Opnext offers unique leading edge optodevices in such areas as fiber-optic communications, optical storage, and measuring

LD5033

Abstract: opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G
Contextual Info: Optodevices Opnext Lights It Up Opnext is paving the way to a future of exciting laser developments and ground breaking applications. Our industry heritage, future-focused thinking and deep commitment to research and development help us anticipate and meet

OpNext

Abstract: opnext laser diode
Contextual Info: Opnext 642nm / 150mW Laser Diode HL6385DG Series World’s First Laser With High Output Power and Single Longitudinal Mode u u u Visible light sources for miniature display Low aspect ratio Φ5.6mm Package High Output Power and Single Longitudinal Mode Laser Diode

dfb activation energy

Abstract: "Hitachi Kodaira Semiconductor" EA-DFB 1455B HF8807 1310nm DFB BH LASER HL6348MG opnext l laser diode DVD 100mw HL6336G
Contextual Info: Optodevice Data Book ODE-408-001I Rev.9 Mar. 2003 Opnext Japan, Inc. Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and/or invisible to the human eye, they can be quite harmful. In particular, avoid looking directly into a

hl6360mg

Abstract: HL6361MG
Contextual Info: HL6360MG/61MG Low Operating Current Visible Laser Diode ODE-208-010 Z Target specification Rev.0 Apr. 2005 Description The HL6360MG/61MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for

009C

Abstract: HL6358MG HL6359MG
Contextual Info: HL6358MG/59MG ODE-208-009C Z Low Operating Current Visible Laser Diode Preliminary Rev.3 Jun. 09, 2006 Description The HL6358MG/59MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.

HL6554MG

Contextual Info: HL6554MG ODE-208-036 Z Preliminary Rev.0 Jul. 13, 2005 AlGaInP Laser Diodes Description The HL6554MG is a 0.65 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as light sources in bar code readers, laser levelers and various other types of optical equipment.

Contextual Info: HL6395MG/96MG High Temperature Low Operating Current Visible Laser Diode ODE2066-01 T Target Specification Rev.1 Nov. 17, 2008 Description The HL6395MG/96MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers and optical equipment for measurement.

Contextual Info: HL7301MG/02MG ODE2004-00 P Preliminary Rev.0 Jun. 23, 2008 InGaAsP Laser Diode Description The HL7301MG/02MG are 0.73 m band InGaAsP laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source for medical sensor applications and various other types of optical equipment.

sumitomo connectors

Abstract: opnext Edd 44 OC-768 JP3407400005
Contextual Info: Leading Optical Device Manufacturers Release Common Specifications for 40 Gbit/s Solutions Based on XLMD Optical Device Multi-Source Agreement Multi-Source Agreement Enables Multiple Vendors to Produce 40 Gbit/s Optical Devices Based on a Unified Standard

HE8811

Contextual Info: HE8811 ODE-208-051 Z Rev.0 Oct. 30, 2006 GaAlAs Infrared Emitting Diode Description The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments and infrared-beam

HE7601SG

Contextual Info: HE7601SG ODE-208-023 Z Rev.0 Oct. 27, 2006 GaAlAs Infrared Emitting Diode Description The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors.

HE8404SG

Abstract: 38485
Contextual Info: HE8404SG GaAlAs Infrared Emitting Diode ODE-208-997A Z Rev.1 Jan. 2003 Description The HE8404SG is a GaAlAs double heterojunction structure 820 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.

Contextual Info: HE8812SG GaAlAs Infrared Emitting Diode ODE-208-1000B Z Rev.2 Mar. 2005 Description The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.

Contextual Info: HL63101MG/102MG ODE2065-01 T Target Specification Rev.1 Apr. 17, 2009 Low Operating Current Visible Laser Diode Description The HL63101MG/102MG are 0.63 m band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.

Contextual Info: HL6376DG ODE-208-064B Z Rev.2 Oct. 18, 2006 Low Operating Current Visible Laser Diode Description This HL6376DG is 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.

HL6555G

Contextual Info: HL6555G ODE-208-056B Z Rev.2 Oct. 12, 2006 Visible High Power Laser Diode for Measurement Description The HL6555G is a 0.65 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for various types of optical equipment.

HL6385DG

Contextual Info: HL6385DG ODE2001-00 M Rev.0 Apr. 03, 2008 Visible High Power Laser Diode Description The HL6385DG is 0.64 m band AlGaInP laser diodes with a multi-quantum well (MQW) structure. It is suitable as light sources for laser display and various other types of optical equipment.

HL6398MG

Contextual Info: HL6397MG/98MG ODE2067-01 P Preliminary Rev.1 Jun. 03, 2009 High Temperature Low Operating Current Visible Laser Diode Description The HL6397MG/98MG are 0.63 m band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.

HL6385DG

Abstract: opnext Opnext Japan
Contextual Info: HL6385DG ODE-208-075A Z Visible High Power Laser Diode Tentative Specification Rev.1 Dec. 11, 2007 Description The HL6385DG is 0.64 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. It is suitable as light sources for laser display and various other types of optical equipment.