OPERATION OF CLASS C AMPLIFIER Search Results

motorola mrf237

Abstract: MOTOROLA SELECTION mrf237 MRF846 MRF229 2N3553 motorola MRF627 MRF227 MRF237 MRF604 2N4427
Contextual Info: RF SMALL-SIGNAL TRANSISTORS continued Class C Amplifiers The transistors listed in these tables are specified for operation in Class C RF power am plifier circuits. The tables are arranged by increasing frequency of operation first, then by increasing output power.

MRF648

Abstract: MRF515 Motorola transistors MRF646 motorola MRF515 Motorola transistors MRF630 MRF646 Motorola transistors MRF629 Transistor MRF630 Motorola transistors MRF648 MRF644
Contextual Info: RF SMALL-SIGNAL TRANSISTORS continued Class C Amplifiers The transistors listed in these tables are specified for operation in Class C RF power am plifier circuits. The tables are arranged by increasing frequency of operation first, then by increasing output power.

MOTOROLA SELECTION mrf237

Abstract: motorola mrf237 MRF515 Motorola transistors MRF630 MRF237 2N3553 Transistor 2N3866 2n3553 to-39 mrf237 MOTOROLA 2N3553 motorola
Contextual Info: RF SMALL-SIGNAL TRANSISTORS continued Class C Amplifiers The transistors listed in these tables are specified for operation in Class C RF power am plifier circuits. The tables are arranged by increasing frequency of operation first, then by increasing output power.

MOTOROLA SELECTION mrf237

Abstract: mrf237 MOTOROLA MRF239 MRF260 MRF212 MRF4070 2N6255 MOTOROLA Motorola 2N6080 motorola mrf237 MRF227
Contextual Info: RF SMALL-SIGNAL TRANSISTORS continued Class C Amplifiers The transistors listed in these tables are specified for operation in Class C RF power am plifier circuits. The tables are arranged by increasing frequency of operation first, then by increasing output power.

8351

Abstract: 4CV100,000C 4CV100000 "RF Amplifier" RF Amplifier 500 watts rf power amplifier 4CV100 af amplifier 4CV1
Contextual Info: The 4CV100,00C/8351 is recommended for use as a Class C RF amplifier or oscillator, a Class AB, push-pull AF amplifier or modulator. The 4CV100,000/8351 is also useful as a plate and screen modulated Class C RF amplifier. Class of Operation Characteristics

8349

Abstract: 4CX35,000C 4cx35000 4CX35 4CX35000c "RF Amplifier" 8823
Contextual Info: The 4CX35,000/8349 is intended for use at the 50 to 150 kW output power level. It is recommended for use as a Class C RF amplifier or oscillator, a Class AB RF linear amplifier, or a Class AB pushpull AM amplifier or modulator Class of Operation Characteristics

5CX1500A

Abstract: EIMAC* 5CX1500A 5CX1500B sk-840 4cx1500a 5cx1500 CX1500 CX1500A SK806 SK-806
Contextual Info: The 5CX1500A is designed for use as a Class C rf power amplifier in radio frequency applications. For FM broadcast service, the 5CX1500B is recommended in place of the 5CX1500A, for improved reliability. Class of Operation Characteristics Plate Dissipation Max.

3cx20000a7

Abstract: 3CX2000 500 watts power amplifier 500 watts amplifier "Power Triode" "RF Amplifier" 211 power Triode amp classes c 3CX20 operation of class c amplifier
Contextual Info: Eimac Power Grid Tube - Quick Reference Data Sheet Page 1 of 1 3CX20,000A7 The Eimac 3CX20,000A7 is a high-mu power triode intended for use as a zero bias Class B RF amplifier or Class C power amplifier or oscillator. Class B operation with zero grid bias offers circuit simplicity. In

3CW30,000H7

Abstract: 3CW30
Contextual Info: The 3CW30,000H7 is a high-mu power triode designed for use as a zero bias Class B RF amplifier, Class C power amplifier or oscillator, or for voltage regulator service. Input of 48 kW is permissible up to 110 MHz. Plentiful reserve emission is available from its one kilowatt filament. Class B operation

3CX10000A7

Abstract: amplifier RF CLASS B power transistor audio amplifier 500 watts "Power Triode" 200 watt audio amplifier 5 volts audio amplifier Power Triode 000A7 Eimac 8160
Contextual Info: Eimac Power Grid Tube - Quick Reference Data Sheet Page 1 of 1 3CX10,000A7/8160 The Eimac 3CX10,000A7/8160 is a high-mu power triode and is intended for use as a zero bias Class B amplifier an audio or RF applications, or as a Class C amplifier, CW or modulated. Operation in a Class B with

2N3553 motorola

Abstract: MRF229 MRF581 mrf237 MOTOROLA MOTOROLA SELECTION 2n3553 MRF314A 2N3866 MOTOROLA motorola mrf237 MRF227 MRF340
Contextual Info: RF SMALL-SIGNAL TRANSISTORS continued Class C Amplifiers T he transistors listed in th ese tab les a re specified for operation in C lass C RF p ow er a m p lifie r circuits. The tables a re arrang ed by increasing frequency of operation first, then by increasing output pow er.

MRF309

Abstract: 2N3866 MOTOROLA mrf237 MOTOROLA MRF390 TO205AD motorola mrf237 MRF227 MRF329 MRF5177 MRF604
Contextual Info: RF SMALL-SIGNAL TRANSISTORS continued Class C Amplifiers T he transistors listed in th ese tab les a re specified for operation in C lass C RF p ow er a m p lifie r circuits. The tables a re arrang ed by increasing frequency of operation first, then by increasing output pow er.

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR SS8050 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • C om plim entary to SS8550 • C ollecto r C urrent: lc=1.5A • C ollecto r D issipation: PC= 2 W T c=25°C ABSOLUTE MAXIMUM RATINGS (TA=25°C)

3050 transistor

Abstract: ss8550 TRANSISTOR transistor 3050 transistor SS8550 SS8050 SS8550 SS8550 PNP
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR SS8550 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. TO -92 • C om plim entary to SS8050 • C ollector C urrent: lc= -1 -5A • C ollector D issipation: PC= 2 W Tc=25°C ABSOLUTE MAXIMUM RATINGS (TA=25°C)

3050 transistor

Abstract: transistor 3050 SS8050 SS8550 transistor SS8550 ss8550 TRANSISTOR
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR SS8550 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. TO -92 • C om plim entary to SS8050 • C ollecto r C urrent: lc= -1 .5A • C ollecto r D issipation: PC= 2 W T c=25°C ABSOLUTE MAXIMUM RATINGS (TA=25°C)

s175-50

Contextual Info: S175 - 50 175 Watts, 50 Volts, Class AB Milcom 1.5 - 30 MHz CASE OUTLINE GENERAL DESCRIPTION 55HX, Style 2 The S175-50 is a 50 Volt, COMMN EMITTER device designed for Class A, AB or C operation in the HF/VHF frequency bands. Its high collector voltage simplifies the design of wideband, SSB linear amplifiers. The transistor chip is

Contextual Info: SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • High total pow er dissipation. PT=625mW High C ollector Current. (Ic= -500m A) C om plem entary to S S 9013 Excellent hpE linearity.

TRANSISTOR ss8050

Abstract: transistor SS8550 SS8050 SS8550
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR SS8050 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. TO -92 • C om plim entary to SS8550 • C o lle c to r C u rre n t: lc=1 5 A • C ollector D issipation: PC= 2 W Tc=25°C ABSOLUTE MAXIMUM RATINGS (TA=25°C)

Contextual Info: SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • T O -92 High total pow er dissipation. P t = 6 2 5 itiW High C ollector C urrent. (Ic= -500mA) C om plem entary to S S9013 Excellent hFE linearity.

LC 500-S

Abstract: SS9013 SS9012
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR SS9013 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • TO -92 High total pow er dissipation. P j= 62 5 m W High C ollector C urrent. (lc=500m A) C om plem entary to S S9012 Excellent hpE linearity.

SS9012

Abstract: SS9013
Contextual Info: SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • T O -92 High total pow er dissipation. P j= 62 5 m W High C ollector C urrent. (Ic= -500mA) C om plem entary to S S9013 Excellent hpE linearity.

transistor cs 9012

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR SS9013 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • T O -92 High total pow er dissipation. PT=625mW High C ollector Current. (lc=500m A) C om plem entary to S S 9012 Excellent hpE linearity.

Contextual Info: 2SC2859LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS 1 B PUSH-PULL OPERATION 2 Complement to 2SA1298LT1 1. 1.BASE 2.EMITTER 3.COLLECTOR Collector Current:Ic=500mA o Collector Dissipation:Pc=225mW Tc=25 C 0.4

MMBT8050LT1

Abstract: MMBT8050
Contextual Info: MMBT8050LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS 1 B PUSH-PULL OPERATION 2 Complement to MMPT8550LT1 Collector Current:Ic=500mA o Collector Dissipation:Pc=225mW Tc=25 C 1. 1.BASE 2.EMITTER 3.COLLECTOR