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UZ210

Abstract: P1275
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TMM27512ADI-20, TMM27512ADI-25 DESCRIPTION The TMM27512ADI is a 65,536 words * 8 bits ultraviolet light erasable and electri­ cally programmable read only memory. For read operation, the TMM27512ADI's access time is 200ns/250ns, and the TMM27512ADI

Contextual Info: TMS28C64 65,536-BIT ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY • Organization 8K x 8 • Single 5-V Power Supply ± 10% N AND J PACKAGES (TOP VIEW } Q 1 U A 12C 2 A7C 3 Compatible with Existing 64K M O S EPRO M s. PRO M s. R O M s, and EEPR O M s

54256AP

Abstract: TC54256AF 54256a TC54256P 54256AF tmm23256p 27256D tc54256ap
Contextual Info: TOSHIBA TC54256AP/AF SILICON STACKED GATE CMOS 32,768 WORD x 8 BIT ONE TIME PROGRAMMABLE READ ONLY MEMORY D e s c rip tio n The TC54256AP/AF is a 32,768 word x 8 bit one time programm able read only m em or/ m olded in a 28-pin plastic package. The TC54256AP/AF’s access time is 200ns and it has a low power standby m ode which reduces the power dissipation without

A1051

Contextual Info: TMS27C291, TMS27C292 16.384-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORIES TMS27PC291 16,384-BIT PROGRAMMABLE READ-ONLY MEMORY SEPTEM BER 1986 —REVISED APRIL 1988 Organization . . . 2K x 8 J AND N PA C KA G E Pin Compatible with Existing 2K x 8 Bipolar/High-Speed CM OS EPROMs

27C020-12

Abstract: 27PC020-12 LS020 A1025 LS020B 2097152-BIT
Contextual Info: TMS27C020 2097152-BIT UV ERASABLE PROGRAMMABLE TMS27PC020 2097152-BIT PROGRAMMABLE READ-ONLY MEMORY SM LS020B - N O V E M B E R 1990 - REVISED JU N E 1995 • Organization . . . 256K x 8 J PACKAGE TOP VIEW • Single 5-V Power Supply • Operationally Compatible With Existing

Contextual Info: TOSHIBA TC58V64FT/DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58V64FT/DC is a single 3.3-V 64-Mbit (69,206,016-bit) NAND electrically erasable and programmable read-only memory (NAND E2PROM) organized as 528 bytes X 16 pages X 1024 blocks.

Contextual Info: SILICON STACKED GATE MOS INTEGRATED CIRCUIT - TC57256AD-12,-120,-150 32 , 768 W O R D x 8 B I T C M O S UV ERASABLE A N D ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY IDESCRIPTIONI The TC57256AD is a 32,768 word x 8 bit CMOS ultraviolet light erasable and electri­

TC5316200bP

Abstract: TC5316200BP/BF
Contextual Info: TOSHIBA TC5316200BP/BF SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS MASK ROM D escription The TC5316200BP/BF is a 16,777,216 bit read only memory organized as 1,048,576 words by 16 bits when BY I t is logical high, and organized as 2,097,152 words by 8 bits when BYTE is logical low.

Contextual Info: TC4SU11F 2 INPUT NAND GATE TC4SU11F is 2 input NAND gate respectively. The internal circuit o f only basic NAND circuit w ith o u t th e w ave fo rm shaping inverter. T herefore, this is suitable for th e applications in liner circuits such as oscillator circuits and am plifier circuits,

TC57256AD

Contextual Info: TOSHIBA TC57256AD-12 TC57256AD-120 TC57256AD-150 SILICON STACKED GATE CMOS 32,768 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY Description The TC57256AD is a 32,768 word x 8 bit CMOS ultraviolet light erasable and electrically programmable read only memory. It

character generater

Contextual Info: 4M BIT 256K W O RD x 16 B IT / 512K W O R D x 8BIT CM OS M ASK ROM DESCRIPTION The BYTE The The TC534200P/F is a 4,194,304 bits read only memory organized as 262,144 words by 16 bits when is logical high, and is organized as 524,288 words by 8 bits when BYTE is logical low.

27C510

Abstract: pc51020 SMJ27C510 pc510-20
Contextual Info: TMS27C510 524 288-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC510 524 288-BIT PROGRAMMABLE READ-ONLY MEMORY SMLS51OA-AUGUST 1990-REVISED JANUARY 1993 J AND N PACKAGESÎ TOP VIEW Organization . . . 64K x 8 Single 5-V Power Supply V pp [ Pin Compatible With Existing 1 Meg MOS

27C512-3

Abstract: 27c512-45 TG-14 27C512 27C512-2
Contextual Info: TEXAS "Ô 961725 INSTR TEX A S {ASIC/MENORY} INS TR PRODUCT PREVIEW 77 d e A S IC /M EM O R V T 0 ^ 1 7 5 5 77C 4 0 9 33 G D Ll ü li 3 3 D TMX27C512 524,288-BIT ERASABLE PROGRAM M ABLE READ ONLY M EM O RY N O V E M B E R 1965 J PACKAGE Organization . . . 64K x 8

TCD131D

Abstract: TC74HC04P 2SA1015-Y 2SA1015 Y
Contextual Info: C D 1 3 1 D The TCD131D is a high resolution and high sensitivity 2048-element linear image sensor. The device can be used foi OCR» POS handscanner bar-code type , and other optical measurements. The device is operated by only 12V power supply. The device is mounted in 22-pin Cerdip package

A18D0

Abstract: TC534000AP
Contextual Info: Slsllllf I I I ! llllll ¡11 4M BIT 512K W O R D x 8 B IT CMOS MASK ROM DESCRIPTION The TC534000AP/AF is a 4,194,304 bits read only memory organized as 524,288words by 8bits. The TC534000AP / AF is fabricated using Toshiba’s advanced CMOS technology which provides the

44460D

Abstract: BK36C-80
Contextual Info: TM124MBK36C, TM124MBK36S1048576 BY 36-BIT TM248NBK36C, TM248NBK36S 2097152 BY 36-BIT DYNAMIC RAM MODULE SMMS138B - MARCH 1992 - REVISED JUNE 199S Enhanced Page Mode Operation With CAS-Before-RAS CBR , RAS-Only, and Hidden Refresh Presence Detect Performance Ranges:

Contextual Info: SMJ27C010 1,048,576-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY M A R C H 1 9 8 8 — R E V IS E D J U L Y 1 9 8 8 • Organization . . . 128K x 8 J PACKAGE • Single 5-V Power Supply TOP VIEW • Industry Standard 32-Pin Dual-ln-llne Package • All Inputs/Outputs Fully TTL Compatible

Contextual Info: TMS27C020 2 097152 BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC020 2 097152 BIT PROGRAMMABLE READ-ONLY MEMORY SMLSO 2 O A-N OVEM BER 18 9 0 -R E V IS E P JANUARY 1993 x J PACKAGEt TOP VIEW 8 Single 5-V Power Supply Vpp[ Operationally Compatible With Existing

TC531621

Contextual Info: TOSHIBA TC5316210CP/CF PRELIMINARY SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS MASK ROM Description TheTC 5316210C P/C F is a 16,777,216 bit read only m em ory organized as 1,048,576 w ords by 16 bits when BYTE is logical

TC5716200D-150

Abstract: 5716200D
Contextual Info: TOSHIBA TC5716200D-150, -200 SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY D escription T heT C 5716200D is a 16,777,216 bit CMOS ultraviolet light erasable and electrically programmable read only memory. It is

Contextual Info: TMS47128 16,384-WORD BY 8-BIT READ-ONLY MEMORY JU N E 1 9 8 3 - N PACKAGE 1 6 ,3 8 4 X 8 Organization TOP VIEW Fully Static (No Clocks, No Refresh) NC £ 1 All Inputs and Outputs TTL Compatible 2 8 3 V CC 2 7 3 S 2 /S 2 A 12 £ 2 A 7C 3 Single 5-V Power Supply

TMS47C256 ROM

Contextual Info: TE XA S INS TR -CASIC/NEHORY} 77 ADVANCE INFORMATION 0^1725 DE 0040=107 4 | ~ TMS47C256 32,768-WORD BY 8-BIT READ-ONLY M EM O RY NOVEMBER 1985 N PACKAGE • 32,768 X 8 Organization • Fully Static No Clocks, No Refresh • All Inputs and Outputs TTL Compatible

Contextual Info: UCC3916 y UNITRODE SCSI Termpower Manager FEATURES DESCRIPTION • Integrated Circuit Breaker Function The UCC3916 SCSI termpower manager provides complete power man­ agement, hot swap capability, and circuit breaker functions with minimal ex­ ternal components. For most applications, the only external component

Contextual Info: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58A040 F SILICON GATE CMOS 4 MBIT 4 M X 1 BITS CMOS AUDIO NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58A040 is a 5-volt 4 Mbit NAND Electrically Erasable and Programmable Read Only Memory