ONI 350 SWITCH Search Results

Contextual Info: ! j MITSUBISHI Nch POWER MOSFET ! FS70VSH-03 î j HIGH-SPEED SWITCHING USE FS70VSH-03 OUTLINE DRAWING Dimensions in mm • 2.5V DRIVE • VDSS . •30V • rDS ON (MAX) .

bq 7510

Abstract: w7510 W-7510 ci 7510 op02 pmi SW7511EQ gic 1990 SN7474 SW751 SW7510FQ
Contextual Info: SW-7510/SW-7511 QUAD SPST JFET ANALOG SWITCHES Pre c is io n M o n o lit h ic s Inc. FEATURES GENERAL D ESCRIPTIO N • • • • • • • • • The SW-7510/7511 are monolithic linear devices, each con­ taining four independently selectable SPST analog switches.

MARK YC

Abstract: BC846 BC846A BC846B BC847 BC847A BC847B BC847C BC848 BC848A
Contextual Info: KEC KOREA E LE C T R O N IC S CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC846/7/8 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES DIM • High Voltage : BC846 V Ceo = 6 5 V . • For Complementary With PNP Type BC856/857/858.

CJW SOT-23

Abstract: BC846 BC846A BC846B BC847 BC847A BC847B BC847C BC848 BC848A
Contextual Info: SEMICONDUCTOR TECHNICAL DATA BC846/7/8 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES DIM A B C D E G H J K L M N P • High Voltage : BC846 V Ceo=65V. • For Complementary With PNP Type BC856/857/858. MAXIMUM RATINGS Ta=25°C

BC857

Abstract: BC857 KEC MARKING KEG SOT-23 BC856 BC856B BC856A BC857A BC857B BC857C BC858
Contextual Info: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC856/7/8 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURE • For Complementary With NPN Type BC846/847/848. DIM A B C D E G H J MAXIMUM RATINGS Ta=25°C

BC856

Abstract: BC856A BC856B BC857 BC857A BC857B BC857C BC858 BC857 kec
Contextual Info: SEMICONDUCTOR TECHNICAL DATA BC856/7/8 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURE • For Complementary With NPN Type BC846/847/848. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT BC856 -80 Collector-Base

Contextual Info: 7 Philips Components Data sheet status Prelim inary specification date of issue March 1991 N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: Whpì iL'tià H E W LE T T PA C K A R D 200-volt/160-0hm, 1 Form A Small-Signal Solid State Relay Technical Data HSSR-8200 • Compact Solid-State BiDirectional Signal Switch • Normally-Off Single-Pole Relay Function 1 Form A • Very High Output OffImpedance: 10,000

IRFS740

Abstract: IRFS741 uA 741 NC K 741 MOSFET
Contextual Info: N-CHANNEL POWER MOSFETS IRFS740/741 FEATURES • Lower R ds<oni • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended sale operating area • Improved high temperature reliability

oni 350

Abstract: VN0340N5 VN0335N2 VN0340N1 VN0340 VN03D VN0340N2
Contextual Info: Supertex inc. ^ V N 03D N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices t O rd er N um b er / Package b v dss/ ^ D S O N ^D(ON) BV dqs (m ax) (m in) TO-3 350V 2.5Q 3A 400V 2.5Î2 3A TO-220 VN0335N1 VN0335N2

ufnf320

Contextual Info: POWER MOSFET TRANSISTORS 400 Volt, 1.8 O hm FEATURES UFNF322 UFNF323 DESCRIPTION • Fast Switching • Low Drive Current The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roaom and a high transconductance.

Contextual Info: IRF740/741/742/743 IRFP340/341/342/343 SAMSUNG ELECTRONICS INC N-CHANNEL POWER MOSFETS SÎ16K b?E D FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance

ignitor sp 20

Abstract: 2SD835 ignitor circuit c9ab 9v ignitor NJ 15 U1 W
Contextual Info: 2SD835 N P N E L m f o m y is — Ê ± / < 7 - l TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON t-w * HIGH VOLTAGE, SWITCHING « w ± , 7 .4 : Features • h p E ^ S t' High D . C , curren t gain • Lo w saturation voltage • ASOA^J a I ' • SfHB*ISfc

ATIC 935

Abstract: 2067h
Contextual Info: ULS-2064H TH ROU GH ULS-2077H 1.25 A Q U A D DA RLING TO N SWITCHES ULS-2064H THROUGH ULS-2077H 1.25 A QUAD DARLINGTON SWITCHES MIL-STD-883 Compliant FEATURES • • • • TTL, DTL, PMOS, or CMOS Com patible Units Transient-Protected Outputs Herm etically Sealed Packages

DIODE S4 52

Abstract: the t.amp 1500 12V1N
Contextual Info: SÌ9711CY TEMIC Semiconductors PC Card PCMCIA Interface Switch Features • Single S O -16 P ackage • C M O S Inputs w ith H ysteresis • E xtrem ely Low R on • • R everse Blocking Sw itches H iZ O utputs in the O ff-State • • Low P ow er C onsum ption

02 diode case R-1

Contextual Info: MITSUBISHI Neh POWER MOSFET FS70UMJ-2 HIGH-SPEED SWITCHING USE FS70UMJ-02 OUTLINE DRAWING D im ensions in mm t 4.5 ^ 1.3 r# 1 : 2.6 • 4 V D R IV E • V dss .100V • ros ON (MAX) .17m Q

Contextual Info: bbS3=l31 0030475 4 SSE D N AMER PHI LIP S/DISCRETE BUK454-600A BUK454-600B PowerMOS transistor T - 37 - 1 1 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

P1086E

Abstract: U306 P1086 EQUIVALENT FOR J174 J174 2N5114 2N5114-16 U304 U305 j174 EQUIVALENT
Contextual Info: a Siliconix designed f o r . . . U304 U305 p-channel JFETs Performance Curves PS See Section 5 Analog Switches B EN EFITS Commutators • Choppers • Low Insertion Loss ^DS on < 85 S2 (U304) High Off-Isolation 'D (o ff) < 500 PA T O -1 8 See S e c tio n 7

2N6761

Abstract: UNITRODE TRANSISTORS SA-A
Contextual Info: POWER MOSFET TRANSISTORS AJTX JTXV 500 Volt, 1.5 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance. FEATURES • Fast Switching

ua1751

Contextual Info: DATA SHEET NEC f jtiPAI 751 MOS FIELD EFFECT POWER TRANSISTORS SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION in: millimeter This pro d u ct is Dual N -C hannel M OS Field Ef­ fect T ra n s is to r d esigned for pow er m anagem ent

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4306G IS S U E 3 - O C TO BER 1995_ FE A T U R E S * Very low RDs oni = -33£2 A PPLICA TIO N S * DC - DC Converters * Solenoids/Relay D rivers for Autom otive PARTM ARKIN G D ETA IL -

DS10N

Contextual Info: V P 05D t ìì Supertex. inc. /p \ P-Channel Enhancement-Mode ^ Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number 1Package f II bC ^DS O N TO-39 TO-92 DICE+ -350V (max) 75n -200mA VP0535N2 VP0535N3 VP0535ND -400V 75a -200mA

UM110S

Abstract: UM1111 UM1117 UM1101 UM1102 UM1103 UM1104 UM1107 UM1108 UM1124
Contextual Info: UNIVERSAL MICRO EL EC TR ONI C 2=iE D • ÜQQ0052 2 ■ ^'S7~U OUTPUT SPECIFICATIONS Voltage Accuracy Single Output — . . Dual + Output . - Output. Triple 5 V . 12V/15V. - 5 V . Voltage Balance, Dual output at Full load