ONI 350 Search Results

IRFF223

Abstract: IRFF222 IRFF220 IRFF221
Contextual Info: -Standard Power MOSFETs File Number IRFF220, IRFF221, IRFF222, IRFF223 1889 N-Channel Enhancement-Mode Power Field-Effect Transistors 3.0A and 3.5A, 150V - 200V rDS oni = 0.80 and 1.20 N-CHANNEL ENHANCEMENT MODE o Features: • m

smd marking code BS sot-23 infineon

Contextual Info: BSS 83P Infineon f*chnologj*4 Preliminary Data SIPMOS Small-Signal-T ransistor Features Product Summary • P Channel Drain source voltage '/os • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current wDS oni 2 -0.33

UM110S

Abstract: UM1111 UM1117 UM1101 UM1102 UM1103 UM1104 UM1107 UM1108 UM1124
Contextual Info: UNIVERSAL MICRO EL EC TR ONI C 2=iE D • ÜQQ0052 2 ■ ^'S7~U OUTPUT SPECIFICATIONS Voltage Accuracy Single Output — . . Dual + Output . - Output. Triple 5 V . 12V/15V. - 5 V . Voltage Balance, Dual output at Full load

IRFS740

Abstract: IRFS741 uA 741 NC K 741 MOSFET
Contextual Info: N-CHANNEL POWER MOSFETS IRFS740/741 FEATURES • Lower R ds<oni • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended sale operating area • Improved high temperature reliability

Contextual Info: •'.ONI HTLS LTD ES 3?hûS01 DOOÜGTl S 16ML PLESSEY T-3>- A5" Three Five Product Information GaAs Dual Gate MESFET P 35-1310 The versatile dual gate MESFET has been designed for improved performance and is ideally suited for: Applications • Automatic gain control

uc 3882

Abstract: KA 3882 ic 3882
Contextual Info: UCC2882 _ U IM IT R O D E UCC3882 PRELIMINARY Average Current Mode Synchronous Controller With 5-Bit DAC FEATURES DESCRIPTION • T he U C C 3882 com bines high precision reference and voltage m oni­ toring circu itry w ith average cu rre n t m ode PW M synchronous rectifi­

Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4306G IS S U E 3 - O C TO BER 1995_ FE A T U R E S * Very low RDs oni = -33£2 A PPLICA TIO N S * DC - DC Converters * Solenoids/Relay D rivers for Autom otive PARTM ARKIN G D ETA IL -

74ls44

Contextual Info: PANASONIC INDL/ELEK ÎICJ 72 69 32 # 52 DE I [^35055 □ DG7Hbli Q P AN AS ONI C I N D L * E L E C T R O N I C f' 72C 07266 LS TTL DN74LS5>U—X DN74LS445/DN74LS445S DN74LS445 DN74LS445S BCD to Decimal Decoders/Drivers • m s D N 74LS445/SI±, * - 7 “ V 3 U 7

1207A

Abstract: lcd 3901
Contextual Info: A ugust 1996 t o r LM1205A/LM1207A 130 MHz/85 MHz RGB Video Amplifier System with Blanking The LM 1205A/LM 1207A is a very high frequency video am ­ plifier system intended fo r use in high resolution RGB m oni­ tor applications. In addition to the three m atched video am ­

10t45

Abstract: 10t60 10T50 10T500 10T70 10td100 10N25V 10TD1000 10T100 10T90
Contextual Info: E S C E L E C T R ONI C S CORP =13 DE d e I 3Ü 37BS7 OGODBTM S | _ _ DIGITAL DELAY LINES 1 4 PIN PACKAGE • TTL AND DTLéCOMPATIBLE ' ' '' ID TAPS * S E R IE S lOTAND IQtD MACHINE INSERTABUE LOW PROFILE DIP Also availab le in Low Power Schottky - Series 1 0 L Î or 10LTD

oni 350

Abstract: ZFW MARKING JN2FS T700238 2FCF SJ-1003 SJ100301 marking zfw
Contextual Info: %J1 B DATE JK f t REV. 8 2 5 5 0 l PS DCN m & W. f t « D E S C R IP T IO N NO. M s m A PPD . a üé CHK. DR. * M A PPD . 'ON ONI MVÜQ W HITE MARKING AS NOTE!. CONTACTS ARE SOLD SEPARATELY. THE APPLICABLE CONTACTS ARE LISTED IN THE TABLE-1. 2. THE PART NUMBER SHALL SPECIFY THE AVAILABILITY OF THE BUSHING, AND THE APPLICABLE CABLE SIZE.

642J

Abstract: 6N137 NEC photo coupler
Contextual Info: N E C ELECTRONICS 6427525 N E C I NC 73 DE P b 4 S 7 S E S 0 0 a EJ E43 EL EC TR ONI CS , INC ¡ NEC NEC Electronics Inc. 72C ¿ 9 2 4 3 T-HÌ-Z3 D 6N137 HIGH S PEED PH OTO CO U P LER • N E P O C SERIES D e s c rip tio n F e a tu re s The 6N137 is a high speed photo coupler containing a

oni 350

Abstract: VN0340N5 VN0335N2 VN0340N1 VN0340 VN03D VN0340N2
Contextual Info: Supertex inc. ^ V N 03D N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices t O rd er N um b er / Package b v dss/ ^ D S O N ^D(ON) BV dqs (m ax) (m in) TO-3 350V 2.5Q 3A 400V 2.5Î2 3A TO-220 VN0335N1 VN0335N2

GSHS-1625

Abstract: GSHS-1625G gshs Raychem BPTM GSHS-1635F GSHS-3635W 175k raychem mwtm RT3 RAYCHEM wcsm
Contextual Info: HEAT SHRINK PRODUCTS C r os s R efer enc e G ui de Qualtek Part Number QBM QBT QSTV Q2-Z Q5-2X Q5-3000 Q5-3X Q5-F3X Q5-4X Q5-F4X Q5-4XR QFRA3 QDWT QSEC QRA2 QFRA3 Q5-3XM Q-175K Q5-3XM QRA2 Q2-F2XYG Q2-F3X Q5-4XR Q2-R Q-150K Q-200E Qualtek Part Number Q2-F

Contextual Info: 1CT I 1CT lOOOpF, 2KV N DT E S ELECTRICAL SPECIFICATIONS: 1,0 P I N S VITHDUT ELECTRICAL CONNECTION ARE DMITTED, 1.0 TURNS RATIO: P 3 - P 5 - P 4 : ( J 6 - J3 ) (P 7 - P 6 - P 8 ) : ( J 2 - J1 ) 1CT : 1CT± 3% 1CT : 1CT ± 3% 2.0 INDUCTANCE: 350uH MIN. @ 0.1V, 100KHz, 8mA DC Bias

Contextual Info: ^ Supertax inc. DN2535 DN2540 N-Channel Depletion-Mode Vertical DMOS FETs Orderina Informât on b v dsx/ R d S ON b v dgx (max) Order Number / Package loss (min) TO-39 TO-92 TO-220 TO-243AA* DIE — DN2535ND DN2540N8 DN2540ND 350V 25£i 150mA DN2535N2 DN2535N3

oni 350 photo

Contextual Info: TN 06D LJ Supertex me. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information R d S ON) I d (ON) ^G S (th ) Order Number / Package (max) (min) (max) TO-92 DICE* 350V 10Q 1.0A 1.8V TN0635N3 TN0635ND 400V 10 fi 1.0A 1.8 V TN0640N3

DS10N

Contextual Info: V P 05D t ìì Supertex. inc. /p \ P-Channel Enhancement-Mode ^ Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number 1Package f II bC ^DS O N TO-39 TO-92 DICE+ -350V (max) 75n -200mA VP0535N2 VP0535N3 VP0535ND -400V 75a -200mA

oni 350

Contextual Info: HM514410JP/ZP-8/10/12 — Preliminary 1,048,576-Word x 4-Bit D ynam ic Random A c c e s s M em ory • DESCRIPTIO N The Hitachi HM514410 is a C M O S dynamic RAM organized 1,048,576 word x 4 bit. HM514410 has realized higher density, higher performance and various functions by employing 0.8 ^m

0S121

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Voltage clamped logic level FET GENERAL DESCRIPTION Protected N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in automotive applications. It has

MN1613

Abstract: T8W sd MN1610 CSRQ 16-Blt floppy drive emulator BS05 LA-F13 t28h TL4W
Contextual Info: PANASONIC INDL/ELEK "{IC} 7E 693 2 8 5 2 PANASONIC I N D L *ELECTRONIC W C 7 Q D > ^ - 5 ? 16-Bit De | ^ 3 5 6 5 5 72C □ D 0 5 cm 7 5 f~ D 05947 MN1613 T-49-17-16 MN1 6 1 3 ¡S*l6 High-Speed 16-B it Single-Chip Microprocessor (Single Voltage Supply) m

oni 350

Contextual Info: Power MOSFET r:C E-pack SMD V X -II series TO-220 ÿ U / " STO-220 (SMD) ITO-3P MTO-3P MTO-3L N-Channel. Enhancement type Electrical Characteristics Absolute Maximum Ratings toff (typ) V gss Id Pt (max) r c ] [V ] [V ] [A ] [W ] [O ] [pF] [pF] [ns] [ns]

Contextual Info: SANYO SEMICONDUCTOR CORP 1EE D I 7 clc17D7t, 0003320 T - 5 Z .A b '2 J Z LA5527M Monolithic Linear 1C 3032B Low-Voltage D C Motor Speed Controller 2073A Especially suited for controlling speed of a low-voltage 3V min. DC motor for cassette tape recorders, 8mm motion-picture cameras, record players

Contextual Info: Whpì iL'tià H E W LE T T PA C K A R D 200-volt/160-0hm, 1 Form A Small-Signal Solid State Relay Technical Data HSSR-8200 • Compact Solid-State BiDirectional Signal Switch • Normally-Off Single-Pole Relay Function 1 Form A • Very High Output OffImpedance: 10,000