ON U1J Search Results

t50h

Abstract: U1JC44
Contextual Info: SILICON DIFFUSED JUNCTION TYPE RECTIFIER UKB, G,J C44 Unit in mm FOR HYBRID USE. . Average Forward Current m : If AV)=1-0A . Repetitive Peak Reverse Voltage : V rrj [=100~600V . Mini Plastic Mold Package U1BC44 U1GC44 U1JC44 On ceramic substrate SYMBOL Repetitive Peak

MARKING U1GB

Abstract: MURS140 MURS160 u1jb
Contextual Info: LITE ON POWER SEMICONDUCTOR MURS140 thru MURS160 REVERSE VOLTAGE - 400 to 200 Volts FORWARD CURRENT - 1.0 Ampere SURFACE MOUNT SUPER FAST RECTIFIERS FEATURES SMB Glass passivated chip Super fast switching for high efficiency For surface mounted applications

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-458CA726 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE ★ Description The MC-458CA726F and MC-458CA726LFA are 8,388,608 words by 72 bits synchronous dynamic RAM module on

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4516CD646 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CD646 is a 16,777,216 words by 64 bits synchronous dynamic RAM module on which 16 pieces of

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4516CD646 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CD646 is a 16,777,216 words by 64 bits synchronous dynamic RAM module on which 16 pieces of

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4516CC727 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CC727 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4532CC727 32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4532CC727 is a 33,554,432 words by 72 bits synchronous dynamic RAM module on which 18 pieces of

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454CA726 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454CA726 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 5 pieces of 64M

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454CB646 4M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454CB646 is a 4,194,304 words by 64 bits synchronous dynamic RAM module on which 4 pieces of 64M

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-458CB646 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-458CB646 is a 8,388,608 words by 64 bits synchronous dynamic RAM module on which 8 pieces of 64M

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-458CA726 8M -W ORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-458CA726 is a 8,388,608 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 64M

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS INTEGRATED CIRCUIT MC-45V8AB641 8M-WORD BY 64-BIT VIRTUAL CHANNEL SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-45V8AB641 is a 8,388,608 words by 64 bits virtual channel synchronous dynam ic RAM module on which 8

MURS140

Abstract: MURS160
Contextual Info: LITE-ON SEMICONDUCTOR MURS140 thru MURS160 REVERSE VOLTAGE - 400 to 200 Volts FORWARD CURRENT - 1.0 Ampere SURFACE MOUNT SUPER FAST RECTIFIERS FEATURES SMB Glass passivated chip Super fast switching for high efficiency For surface mounted applications Low forward voltage drop and high current capability

Contextual Info: LITE-ON SEMICONDUCTOR MURS140 thru MURS160 REVERSE VOLTAGE - 400 to 200 Volts FORWARD CURRENT - 1.0 Ampere SURFACE MOUNT SUPER FAST RECTIFIERS FEATURES SMB Glass passivated chip Super fast switching for high efficiency For surface mounted applications Low forward voltage drop and high current capability

u1jb

Contextual Info: LITE-ON SEMICONDUCTOR MURS140 thru MURS160 REVERSE VOLTAGE - 400 to 200 Volts FORWARD CURRENT - 1.0 Ampere SURFACE MOUNT SUPER FAST RECTIFIERS FEATURES SMB Glass passivated chip Super fast switching for high efficiency For surface mounted applications Low forward voltage drop and high current capability

Contextual Info: DATA SH EE T MOS INTEGRATED CIRCUIT MC-4532CC726 32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4532CC726 is a 33,554,432 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 128M SDRAM: ,uPD45128841 are assembled.

BT136-600E equivalent

Abstract: D2499 equivalent D1878 equivalent BT139-600 equivalent C4927 d1577 d1554 C5386 c5129 e13005 equivalent
Contextual Info: “Philips Type” refers to closest Philips alternative or equivalent if available. Always consider the application and compare data specifications before recommending the suitable Philips type. Notes: 1 - dual device. 2 - competitor RDS on falls between two Philips types, hence either stated device may be suitable.

Contextual Info: DATA SH EE T MOS INTEGRATED CIRCUIT MC-4532CD646 32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The M C-4532CD646 is a 33,554,432 words by 64 bits synchronous dynam ic RAM module on which 16 pieces of 128M SDRAM: ,uPD45128841 are assembled.

g31 m7 te MOTHERBOARD CIRCUIT diagram

Abstract: FDV301N SOT23 D E6327 Application
Contextual Info: User's Guide SLLU148 – May 2011 TLK10002 Dual-Channel, 10-Gbps, Multi-Rate Transceiver Evaluation Module This user’s guide describes the usage and construction of the TLK10002 evaluation module EVM . This document provides guidance on proper use by showing some device configurations and test modes. In

manual motherboard canada ices 003 class b

Abstract: motherboard canada ices 003 class b g31 motherboard manual motherboard canada ices 003 class a manual motherboard canada ices 003 class b user
Contextual Info: User's Guide SLLU168 – August 2012 TLK10034 Quad-Channel XAUI/10GBASE-KR Transceiver Evaluation Module EVM This user’s guide describes the usage and construction of the TLK10034 evaluation module (EVM). This document provides guidance on proper use by showing some device configurations and test modes. In

4516CD

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CD641ES 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-4516CD641 ES is a 16,777,216 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 128M SDRAM: ,uPD45128163 are assembled.

U840 diode motorola

Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
Contextual Info: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CA721 ESA 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-458CA721 ESA is a 8,388,608 words by 72 bits synchronous dynamic RAM module (Small Outline DIMM) on which 5 pieces of 128M SDRAM: ,uPD45128163 are assembled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CB64S 8 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-458CB64S is a 8,388,608 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 64 M SDRAM : ,uPD4564841 are assembled.