ON MARKING Search Results

2N7002

Abstract: 2N7002 MARKING 712
Contextual Info: 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* 702❋ 60V 7.5Ω 0.5A 2N7002 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

Contextual Info: N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ R d S ON I d (ON) Order Number / Package Product marking for TO-236AB: b v dgs (max) (min) TO-236AB* 702 * 60V 7.5Û 0.5A 2N7002 where * = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

TP0610T

Abstract: wA SOT23 SWITCHING
Contextual Info: TP0610T P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss / R d S ON I d (ON) Order Number/Package Product marking for SOT-23: T50* BVdgs (max) (min) TO-236AB* -60V 10Q -50mA TP0610T where 0 = 2-week alpha date code *S am e as SO T-23. All units shipped on 3,000 piece ca rrie r tape reels.

MOTOROLA LOT MARKINGS

Abstract: On semiconductor date Code IC Lot Code Identification marking code 6L QFN tray qfn 4x4 AND8002 ase qfn unisem QFN marking code onsemi Diode on alpha year and work week
Contextual Info: AND8002/D Clock Generation and Clock and Data Marking and Ordering Information Guide http://onsemi.com Prepared by: Paul Shockman ON Semiconductor APPLICATION NOTE Introduction This application note describes the device markings and ordering information for the following ON Semiconductor

elna re3

Abstract: RJ4 Elna 35222M re3 elna 35V222
Contextual Info: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS RE3 Standard Capacitors Series RE3 • Guaranteed 2000 hours at 85˚C. RJ4 High temperature RE3 Marking color : White print on a blue sleeve or White print on an indigo blue sleeve Specifications Item Performance

MB2400

Contextual Info: Toggles Series MB2400 TYPICAL SWITCH ORDERING EXAMPLE Rockers Pushbuttons Programmable Illuminated PB Keylocks Rotaries 11 MB24 C A2 Poles & Circuits 11 61 SPDT DPDT ON ON G 40 Contact Materials & Ratings ON (ON) Bushings F Caps W Silver Rated 3A @ 125V AC

FX709J

Abstract: FX709 FX709LH
Contextual Info: Package Outlines Handling Precautions The FX709 is available in the package styles outlined below. Mechanical package diagrams and specifications are detailed in Section 10 of this document. Pin 1 on marking is shown on the relevant diagram and pins on all package styles number

marking codes fairchild

Abstract: HEP08 fairchild marking codes sot-23 TOREX TOP CODE AND8004 t324 SOT-353 A7 marking L5 sot363 xaa643 and8004 D
Contextual Info: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to

Contextual Info: ECH8661 Ordering number : ENA1777 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs ECH8661 General-Purpose Switching Device Applications Features • • • • ON-resistance Nch: RDS on 1=18mΩ(typ.), Pch: ON-resistance RDS(on)1=30mΩ(typ.)

SSM6N43FU

Contextual Info: SSM6N43FU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM6N43FU ○ High-Speed Switching Applications Unit: mm • 1.5-V drive • Low ON-resistance : RDS ON = 1.52 Ω (max) (@VGS = 1.5V) : RDS(ON) = 1.14 Ω (max) (@VGS = 1.8V) : RDS(ON) = 0.85 Ω (max) (@VGS = 2.5V)

Contextual Info: SSM6P47NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS VI SSM6P47NU Power Management Switch Applications 1.5V drive Low ON-resistance:RDS(on) = 242 mΩ (max) (@VGS = -1.5 V) RDS(on) = 170 mΩ (max) (@VGS = -1.8 V) RDS(on) = 125 mΩ (max) (@VGS = -2.5 V)

STS30N3LLH6

Contextual Info: STS30N3LLH6 N-channel 30 V, 0.0016 Ω, 30 A, SO-8 STripFET VI DeepGATE™ Power MOSFET Features Type VDSS RDS on max ID STS30N3LLH6 30 V 0.0024 Ω 30 A • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness

STD86N3LH5

Contextual Info: STD86N3LH5 N-channel 30 V, 0.0045 Ω , 80 A, DPAK STripFET V Power MOSFET Features Order code VDSS RDS on max ID STD86N3LH5 30 V < 0.005 Ω 80 A • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■

Contextual Info: IDT7025S/L HIGH-SPEED 8K x 16 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. more than one device M/S = H for BUSY output flag on Master M/S = L for BUSY input on Slave Interrupt Flag On-chip port arbitration logic Full on-chip hardware support of semaphore signaling

Contextual Info: HP8K21 30V asymmetric Dual High Power Nch-MOSFET <Tr1：N-Channel> Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 6.7mW RDS(on) at 4.5V (Max.) 8.7mW HSOP8 <Dual> S1/D2 <Tr2：N-Channel> VDSS 30V RDS(on) at 10V (Max.) 2.4mW RDS(on) at 4.5V (Max.) 3.1mW lInner circuit

14D3L

Contextual Info: STS14N3LLH5 N-channel 30V - 0.006Ω - 14A - SO-8 STripFET V Power MOSFET Preliminary Data Features Type VDSS RDS on ID STS14N3LLH5 30 V <0.0075 Ω 14 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)

15n03l

Abstract: 15N03 IPB15N03L IPP15N03L IPB15N03L SMD OPTIMOS smd code diode 20a
Contextual Info: IPP15N03L IPB15N03L Preliminary data OptiMOS =Buck converter series Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) product (FOM) 30 VDS RDS(on) max. SMD version ID V m
12.6 42 P-TO263-3-2

Contextual Info: SSM6P41FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS-V SSM6P41FE ○ Power Management Switches : RDS(ON) = 1.04 Ω (max) (@VGS = -1.5 V) : RDS(ON) = 0.67 Ω (max) (@VGS = -1.8 V) : RDS(ON) = 0.44 Ω (max) (@VGS = -2.5 V) : RDS(ON) = 0.30 Ω (max) (@VGS = -4.5 V)

PS7214-1A

Abstract: PS7214-1A-A PS7214-1A-E3 PS7214-1A-E4 PS7214-1A-F3 PS7214-1A-F4
Contextual Info: Solid State Relay OCMOS FET PS7214-1A 4-PIN SOP, 1.0 Ω LOW ON-STATE RESISTANCE −NEPOC 1-ch Optical Coupled MOS FET Series− DESCRIPTION The PS7214-1A is a low on-state resistance solid state relay containing a GaAs LED on the input side and MOS FETs on the output side.

Contextual Info: SSM3J56MFV TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOSⅥ SSM3J56MFV ○ Load Switching Applications • • 1.2 V drive Low ON-resistance:RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V)

nec 205b

Abstract: PS7205B-1A PS7205B-1A-E3 PS7205B-1A-E4 PS7205B-1A-F3 PS7205B-1A-F4 13005 mosfet
Contextual Info: 4 PIN SOP, 0.9 Ω, LOW ON-STATE RESISTANCE 80 V BREAK DOWN VOLTAGE, 500 mA CONTINUOUS LOAD CURRENT 1-CH OPTICAL COUPLED MOSFET FEATURES PS7205B-1A DESCRIPTION The PS7205B-1A is a low on-state resistance solid state relay containing a GaAs LED on the input side and MOS FETs on

b60nh02l

Abstract: RG211 STB60NH02L STB60NH02LT4 B60NH0
Contextual Info: STB60NH02L N-CHANNEL 24V - 0.0085 Ω - 60A D²PAK STripFET III POWER MOSFET TYPE STB60NH02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.0105 Ω 60 A TYPICAL RDS(on) = 0.0085 Ω @ 10 V TYPICAL RDS(on) = 0.012 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK

B60NH02L

Abstract: B60NH0 STB60NH02LT4 STB60NH02L L3 marking b60nh02
Contextual Info: STB60NH02L N-CHANNEL 24V - 0.0085 Ω - 60A D²PAK STripFET III POWER MOSFET TYPE STB60NH02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.0105 Ω 60 A TYPICAL RDS(on) = 0.0085 Ω @ 10 V TYPICAL RDS(on) = 0.012 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK

05CN10N

Abstract: 05cn10 IPB05CN10N IPP05CN10N JESD22 PG-TO220-3
Contextual Info: IPB05CN10N G IPI05CN10N G IPP05CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)