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    900N15N Search Results

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    Infineon Technologies AG BSZ900N15NS3GATMA1

    MOSFET N-CH 150V 13A 8TSDSON
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    DigiKey () BSZ900N15NS3GATMA1 Cut Tape 7,013 1
    • 1 $1.08
    • 10 $0.81
    • 100 $0.67
    • 1000 $0.57
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    BSZ900N15NS3GATMA1 Digi-Reel 7,013 1
    • 1 $1.08
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    BSZ900N15NS3GATMA1 Reel 5,000
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    Avnet Americas () BSZ900N15NS3GATMA1 Ammo Pack 1
    • 1 $1.12
    • 10 $0.83
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    BSZ900N15NS3GATMA1 Reel 16 Weeks 5,000
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    Mouser Electronics BSZ900N15NS3GATMA1 7,915
    • 1 $1.18
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    Newark () BSZ900N15NS3GATMA1 Cut Tape 166 1
    • 1 $1.06
    • 10 $0.80
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    BSZ900N15NS3GATMA1 Reel 5,000
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    TME BSZ900N15NS3GATMA1 3,006 1
    • 1 $1.05
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    Rutronik BSZ900N15NS3GATMA1 Reel 40,000 5,000
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    Chip One Stop BSZ900N15NS3GATMA1 Cut Tape 14,100 0 Weeks, 1 Days 1
    • 1 $1.05
    • 10 $0.74
    • 100 $0.63
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    Chip Stock BSZ900N15NS3GATMA1 103,200
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    EBV Elektronik BSZ900N15NS3GATMA1 17 Weeks 5,000
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    Infineon Technologies AG BSZ900N15NS3 G

    MOSFETs N-Ch 150V 13A TSDSON-8 OptiMOS 3
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    Mouser Electronics BSZ900N15NS3 G 5,814
    • 1 $1.94
    • 10 $1.24
    • 100 $0.82
    • 1000 $0.59
    • 10000 $0.48
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    Bristol Electronics BSZ900N15NS3G 80 3
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    • 100 $0.63
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    Win Source Electronics BSZ900N15NS3G 29,090
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    Others CRTD900N15N

    INSTOCK
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    Chip 1 Exchange CRTD900N15N 19,500
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    Infineon Technologies AG BSZ900N15NS3GXT

    Transistors
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    Vyrian BSZ900N15NS3GXT 994
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    900N15N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    900N15N

    Abstract: BSZ900N15NS3 IEC61249-2-21 JESD22 BSZ900N15NS3 G J2820
    Contextual Info: s 900N15NS3 G OptiMOSTM3 Power-Transistor Product Summary Package Marking • N-channel, normal level V DS 150 V R DS on ,max 90 mΩ ID 13 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) PG-TSDSON-8 • 150 °C operating temperature


    Original
    BSZ900N15NS3 IEC61249-2-21 900N15N 900N15N IEC61249-2-21 JESD22 BSZ900N15NS3 G J2820 PDF

    Contextual Info: s 900N15NS3 G OptiMOSTM3 Power-Transistor Product Summary Package Marking • N-channel, normal level V DS 150 V R DS on ,max 90 mΩ ID 13 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) PG-TSDSON-8 • 150 °C operating temperature


    Original
    BSZ900N15NS3 IEC61249-2-21 900N15N PDF

    diode marking f13

    Abstract: bsz900
    Contextual Info: s 900N15NS3 G OptiMOSTM3 Power-Transistor Product Summary Package Marking • N-channel, normal level V DS 150 V R DS on ,max 90 mΩ ID 13 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) PG-TSDSON-8 • 150 °C operating temperature


    Original
    BSZ900N15NS3 IEC61249-2-21 900N15N diode marking f13 bsz900 PDF