ON 2580 Search Results

027N10N

Abstract: IPB027N10N3 JESD22
Contextual Info: IPB027N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 2.7 mΩ ID 120 A • Very low on-resistance R DS(on) • 175 °C operating temperature

027N10N

Abstract: IPB027N10N3 IEC61249-2-21 JESD22
Contextual Info: IPB027N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 2.7 mΩ ID 120 A • Very low on-resistance R DS(on) • 175 °C operating temperature

030N10N

Abstract: IPP030N10N
Contextual Info: IPP030N10N3 G OptiMOS 3 Power-Transistor IPI030N10N3 G Product Summary Features VDS • N-channel, normal level 100 RDS on ,max • Excellent gate charge x R DS(on) product (FOM) V 3 ID mW 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature

025n10n

Abstract: IPB025N10N3 IPB025N10N3 G IEC61249-2-21 JESD22
Contextual Info: IPB025N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 2.5 mΩ ID 180 A • Extremely low on-resistance R DS(on) • High current capability

025N10N

Abstract: IPB025N10N3 IPB025N10N3 G JESD22
Contextual Info: IPB025N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 2.5 mΩ ID 180 A • Extremely low on-resistance R DS(on) • High current capability

Contextual Info: CYONS2001 OvationONS IIII OvationONS™ WirelessLaser LaserNavigation NavigationSystem-on-Chip System-on-Chip Wireless Features • Description Programmable blocks ❐ Highly integrated wireless mouse-on-a-chip with programmable PSoC microcontroller unit MCU

Contextual Info: CYONS2001 OvationONS IIII OvationONS™ WirelessLaser LaserNavigation NavigationSystem-on-Chip System-on-Chip Wireless Features • Description Programmable blocks ❐ Highly integrated wireless mouse-on-a-chip with programmable PSoC microcontroller unit MCU

Contextual Info: CYONS2001 OvationONS IIII OvationONS™ WirelessLaser LaserNavigation NavigationSystem-on-Chip System-on-Chip Wireless Features • Description Programmable blocks ❐ Highly integrated wireless mouse-on-a-chip with programmable PSoC microcontroller unit MCU

030N10N

Abstract: IPP030N10N3 JESD22 PG-TO220-3 IPP030N10N3 G DSV80
Contextual Info: IPP030N10N3 G OptiMOS 3 Power-Transistor IPI030N10N3 G Product Summary Features V DS • N-channel, normal level 100 R DS on ,max • Excellent gate charge x R DS(on) product (FOM) V 3 ID mΩ 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature

Contextual Info: IPA030N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS • N-channel, normal level • Excellent gate charge x R DS on product (FOM) 100 V RDS(on),max 3 mW ID 79 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only Features * * * * * * Package in 8mm tape on 7" diameter reels. Compatible with automatic placement equipment. Compatible with infrared and vapor phase reflow solder process. EIA STD package. I.C. compatible.

Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only Features * * * * * * Package in 8mm tape on 7" diameter reels. Compatible with automatic placement equipment. Compatible with infrared and vapor phase reflow solder process. EIA STD package. I.C. compatible.

IPA030N10N3 G

Abstract: JESD22 75V10 DD-50 030n10n
Contextual Info: IPA030N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features V DS • N-channel, normal level • Excellent gate charge x R DS on product (FOM) 100 V R DS(on),max 3 mΩ ID 79 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

LR33434

Abstract: VTM-1 E6036
Contextual Info: Cube Timers – Series VTM1 On-Delay Timing Modules DESIGN FEATURES ♦ On-Delay operating mode ♦ Reliable solid state timing circuitry ♦ Excellent transient protection ♦ Compact design ♦ Flame-retardant, solvent-resistant housing SPECIFICATIONS Operating Mode: On-Delay

STR W 5753 a

Abstract: LA 42072 str w 5753 str 5753 STR S 5741 uc 8343 hai 7358 PA 0016 PIONEER Str W 5754 STR G 6352
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book LEADED SOLID ELECTROLYTE TANTALEX CAPACITORS vishay vse-db0029-0805 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

7 Segment sm 42056

Abstract: sm 42056 7 segment display sm 42056 Roederstein EK roederstein capacitor ek series Vishay Roederstein EKM en13003 Roederstein EKm 7 Segment common cathode Vishay Roederstein EBR
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book smd­ • radial • A xial Aluminum capacitors vishay vse-db0111-0810 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2725UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm 1 7 • Low on-state resistance 3 6 4 5 +0.1 0.42 −0.05 RDS(on)1 = 5.0 mΩ MAX. (VGS = 10 V, ID = 13 A) RDS(on)2 = 7.5 mΩ MAX. (VGS = 4.5 V, ID = 13 A)

Contextual Info: P-CONN TM SCREW-ON WIRE CONNECTORS Table of Contents P-CONN SIDEWINDER ™ Screw-on Wire Connectors Hex Style Features and benefits . Page 2 Wire ranges and capacities . Page 3

CXB1103QY

Abstract: Oscilloscope ADC schematic 1GHz 1795 40pin 100S351 MAX1150 MAX1150AIZS MAX1151 MAX1151AIZS MAX1151EVKIT SY100S351
Contextual Info: 19-1199; Rev 0; 3/97 MAX1150/MAX1151 Evaluation Kit _Features ♦ 750Msps Maximum Conversion Rate MAX1151 ♦ On-Board Reconstruction DAC ♦ On-Board Reference Circuit ♦ Full-Speed Digital Output Through a High-Speed Connector

Contextual Info: FDS86140 N-Channel PowerTrench MOSFET 100 V, 11.2 A, 9.8 mΩ Features General Description ̈ Max rDS on = 9.8 mΩ at VGS = 10 V, ID = 11.2 A This ̈ Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9 A Semiconductor‘s advanced Power Trench® process that has ̈ High performance trench technologh for extremely low rDS(on)

Contextual Info: FDS86140 N-Channel PowerTrench MOSFET 100 V, 11.2 A, 9.8 mΩ Features General Description „ Max rDS on = 9.8 mΩ at VGS = 10 V, ID = 11.2 A This „ Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9 A Semiconductor‘s advanced Power Trench® process that has „ High performance trench technologh for extremely low rDS(on)

elna re3

Abstract: RJ4 Elna 35222M re3 elna 35V222
Contextual Info: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS RE3 Standard Capacitors Series RE3 • Guaranteed 2000 hours at 85˚C. RJ4 High temperature RE3 Marking color : White print on a blue sleeve or White print on an indigo blue sleeve Specifications Item Performance

C5101-1

Contextual Info: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS RE3 Standard Capacitors Series RE3 • Guaranteed 2000 hours at 85˚C. RJ4 High temperature RE3 Marking color : White print on a blue sleeve or White print on an indigo blue sleeve Specifications Item Performance

wireless mouse circuit diagram power boost

Abstract: encoder optic wheel mouse sensor multiple Touch capacitive Sensor cypress optic wheel mouse sensor optic mouse sensor
Contextual Info: CYONS2110 OvationONS II Wired/Wireless Laser Navigation System-on-Chip Features • Description Programmable blocks ❐ Highly integrated mouse-on-a-chip with programmable PSoC microcontroller unit MCU ❐ 32 KB flash memory ❐ 2 KB static RAM (SRAM)