ON/GOLD DETECTORS CIRCUIT Search Results

J15D

Abstract: J15D16-M204-S01M-60 W1 466C DE1M J15D14 J15D14-M204-S500U-60 J15-D 5-3CN-S01M gold metal detectors PA-101
Contextual Info: Mercury Cadmium Telluride Detectors ISO 9001 Certified Distributor: Laser Components GmbH, Germany, Phone: 0049 0 8142 28640, www.lasercomponents.com J15 Mercury Cadmium Telluride Detectors (2 to 26 µm) General Detector Bias and Operating Circuit D* and Responsivity vs. Bias

Contextual Info: MicroAmp MB-12 Circuit Board For Analog Devices Log Detectors FEATURES • Fits Analog Devices AD8317/8319 LFCSP packages • 10 GHz frequency range • Controller or Measurement mode • Uses standard SMD passive parts • RO-4350 board material • Fits MicroAmp MH-series housings

gold detectors circuit

Abstract: PDF PIN PHOTO DIODE DESCRIPTION detector alcohol OP58TS The Optical Devices
Contextual Info: Spec. No. : ODT-W010-82 0 Issued Date : 2004.09.20 SPECIFICATION MODEL NAME : Photo Diode MODEL NO. : OP58TS Prepared by : Checked by : Approved by : ODTech Head office : 814, Youngam-ri, Bongdong-eup, Wanju-gun, Jeonbok-do, Korea Tel : 82-63-263-7626, Fax : 82-63-262-7624

gold metal detectors

Abstract: Schottky diode wafer
Contextual Info: Schottky barrier diode technology Signal conditioning is the major application field for Schottky barrier d io d e s : speed switching, mixing, detecting, clipping and clamping. Frequency ranges from digital to m icrowave are supported. The outstanding characteristic of Schottky diode construction Is the barrier: a metal layer deposited

Circuit integrated 8002

Abstract: HSMS0005 HSMS2850 HSMS8002 Hewlett-Packard microwave pin diode sn 8002
Contextual Info: Schottky Barrier Chips for Hybrid Integrated Circuits Technical Data HSMS-0005/06 HSMS-8002/12 Features Description/Applications • Thermocompression/ Thermosonically Bondable • Gold Metallization • Silicon Nitride Passivation • Uniform Electrical Characteristics

Contextual Info: Schottky Barrier Chips for Hybrid Integrated Circuits Technical Data HSMS-0005/06 HSMS-8002/12 Features Description/Applications • Thermocompression/ Thermosonically Bondable • Gold Metallization • Silicon Nitride Passivation • Uniform Electrical Characteristics

CDB7619-000

Abstract: CDE7618-000 Silicon Detector Diodes
Contextual Info: EBA lpha Silicon Schottky Barrier Detector Diodes Features Both P-Type and N-Type Low Barrier Silicon Available Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam-Lead and Chip Construction See Also Zero Bias Silicon Schottky Barrier Detector Diodes

Contextual Info: What HEW LETT* miltm PACKARD Schottky Barrier Chips for Hybrid Integrated Circuits Technical Data HSMS-0005/06 HSMS-8002/12 Features Description/Applications • Thermocompression/ Thermosonically Bondable • Gold Metallization • Silicon Nitride Passivation

Contextual Info: Delivering 13.0A and 600V per circuit, the KK 396 Reflow Process Compatible RPC Connector System suports a lead-free solder process and is ideal for low- to mid-power wire-to-board and board-to-board applications Electronics manufacturers are being driven by consumers and environmental

x band diode detector waveguide

Abstract: CME7660-000 DIODE RL 207 8E08 detector doppler ka CDB7619-000 CDC7630-000 RF 207 Silicon Detector Diodes Alpha Industries
Contextual Info: Silicon Schottky Barrier Detector Diodes Features 3 Both P–Type and N–Type Low Barrier Silicon Available Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam–Lead and Chip Construction See Also Zero Bias Silicon Schottky Barrier Detector Diodes

Contextual Info: GC9901 – GC9944 Schottky Barrier Diodes TM For Mixers and Detectors RoHS Compliant KEY FEATURES Schottky Barrier devices are currently available in single beamlead, dual “T”, ring quad and bridge quad configurations. Devices are available in monolithic

gold detectors circuit

Abstract: non HERMETIC PACKAGES GC9934 GC9901 GC9903 GC9911 GC9900-TSR GC9943 kuka
Contextual Info: GC9901 – GC9944 Schottky Barrier Diodes TM For Mixers and Detectors RoHS Compliant DESCRIPTION KEY FEATURES This series of devices meets RoHS requirements per EU Directive 2002/95/EC. • Monolithic design for lowest parasitics • Low Conversion Loss

Contextual Info: HMC611 v03.0109 60 dB, LOGARITHMIC DETECTOR / CONTROLLER, 1 - 10000 MHz POWER DETECTORS - CHIP 6 Typical Applications Features The HMC611 is ideal for: Wide Dynamic Range: Up to 73 dB • Cellular/PCS/3G High Accuracy: ±1 dB with 51 dB Range Up to 8 GHz • WiMAX, WiBro, WLAN, Fixed Wireless & Radar

3600 watts power amplifier circuit diagram

Abstract: HMC611
Contextual Info: HMC611 v02.0908 60 dB, LOGARITHMIC DETECTOR / CONTROLLER, 1 - 10000 MHz POWER DETECTORS - CHIP 12 Typical Applications Features The HMC611 is ideal for: Wide Dynamic Range: Up to 73 dB • Cellular/PCS/3G High Accuracy: ±1 dB with 51 dB Range Up to 8 GHz

Pyroelectric Detectors

Abstract: schematic insb W1 466C PA-101 capacitor RC 65 8142 T gold metal detectors J15-IN J15TE2 HgCdTe TE cooled GE detector
Contextual Info: Mercury Cadmium Telluride Detectors ISO 9001 Certified Germany and other countries: LASER COMPONENTS GmbH, Phone: +49 8142 2864 0, Fax: +49 8142 2864 11, info@lasercomponents.com Great Britain: LASER COMPONENTS UK Ltd., Phone: +44 1245 491 499, Fax: +44 1245 491 801, info@lasercomponents.co.uk

HMC611

Abstract: radar detector receiver 3600 watts power amplifier circuit diagram
Contextual Info: HMC611 v01.0408 60 dB, LOGARITHMIC DETECTOR / CONTROLLER, 1 - 10000 MHz POWER DETECTORS - CHIP 12 Typical Applications Features The HMC611 is ideal for: Wide Dynamic Range: Up to 73 dB • Cellular/PCS/3G High Accuracy: ±1 dB with 51 dB Range Up to 8 GHz

Contextual Info: Universal Chip Mixer and EHA lp h a Detector Schottky Barrier Diodes CDX76XX, CME7660 Features • For Microwave MIC Assembly ■ Mechanically Rugged Design Exceeds MIL 883 Wire Bond Specifications for Hybrid Assembly ■ Optimized Barrier Heights for Mixer and Detector

Contextual Info: SMARTLOAD POWER SENSING TERMINATIONS SmartlaKf romomes an RF termination with a sign# detector into one •pwstettevK&T&spart M ite s all thick-film construction, true RMS detector, and linear cesponse. Only from £MC •M icfcgyi Patent finding. Application:

tunnel diode

Abstract: coaxial limiter
Contextual Info: jtà i M a n A M P c< o m p a n y Limiter Tunnel Diode Detectors 0.1 -18.0 GHz ML 7718-0000 Series V2.00 Description Typical Performance This series of limiter-detectors offers similar performance advantages to the standard tunnel diode detectors but with extended RF input pow er range. A silicon PIN

HSMS0001

Abstract: Silicon Point Contact Mixer Diodes hsch 3486 zero bias schottky diode
Contextual Info: C haracteristics o f Schottky Barrier D iodes A Schottky barrier diode contains a metal-semiconductor barrier formed by deposition of a metal layer on a semiconduc­ tor. The resulting non-linear diode is similar to point contact diodes and p-n junction diodes.

180 Degree hybrid ku band

Contextual Info: Universal Chip Mixer and 0 3 Alpha Detector Schottky Barrier Diodes t,.- , „• CDX76XX, CME7660 Features • For Microwave MIC Assembly ■ Mechanically Rugged Design Exceeds MIL 883 Wire Bond Specifications for Hybrid Assembly ■ Optimized Barrier Heights for Mixer and Detector

gold metal detectors

Abstract: IN5711 in5711 equivalent diode ring mixer PN Junction Diode oscillator Metal Detector doppler radar p-n junction diode digital metal detector Silicon Point Contact Mixer Diodes
Contextual Info: Schottky Barrier Diodes Characteristics A Schottky barrier diode contains a metal-semiconductor barrier formed by deposition of a metal layer on a semiconductor. The resulting non-linear diode is similar to point contact diodes and p-n junction diodes. The

ODS-1278

Abstract: Schottky diode Die flip chip
Contextual Info: MA4E1310 GaAs Flip Chip Schottky Barrier Diode Rev. V2 Features • • • • • • Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Designed for Easy Circuit Insertion Case Style ODS-1278

IN5711

Abstract: Silicon Point Contact Mixer Diodes Microwave zero bias detector diodes
Contextual Info: W O ñ H EW LETT' 1"KM PACKARD Schottky Barrier Diodes C haracteristics A Schottky barrier diode contains a metal-semiconductor barrier formed by deposition of a metal layer on a semiconductor. The resulting non-linear diode is similar to point contact diodes