OHE 1000 Search Results

BUZ50B

Abstract: T0220AB 2SC252
Contextual Info: N AMER PHILIPS/DISCRETE OhE D PowerMOS transistor m ” hhS3T31 001MSb3 L BUZ50B W May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: SIEMENS Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 310 SFH 310 FA Wesentliche Merkmale Features • Speziell geeignet für Anw endungen im B ereich von 400 nm bis 1100 nm S F H 310 und bei 880 nm (SFH 310 FA) • H ohe Linearität

rca 7649

Abstract: RCA -7649 92CM-92 rca company microwave tubes rca tube 80 F 7649 7649
Contextual Info: 7649 Beam Power Tube CERAMIC-METAL SEALS COAXIAL-ELECTRODE STRUCTURE INTEGRAL RADIATOR "OHE-PIECE" ELECTRODE DESI6N FORCED-AIR COOLED 9000-WATTS PEAK-PULSE INPUT UP TO 1215 Me MATRIX-TYPE, OXIDE-COATED, UNIPOTENTIAL CATHODE For Use at Frequencies up to 2000 He

E587

Contextual Info: OPTEK TECHNOLOGY INC OhE D | b7TflS00 0000530 a I Optoelectronics Division T R W Electronic Components Group 1987 Cost Saver Product! Call TRW for more information! Product Bulletin 52 0 6 January 1985 i v j n a a m M M t W W T - H I-S 3 Optically Coupled Isolators

TELEDYNE PHILBRICK

Abstract: TELEDYNE PHILBRICK 1435 PHILBRICK optical electronics 9918 philbrick power supply TELEDYNE PHILBRICK f to v TELEDYNE PHILBRICK V to F DDD1711 "optical electronics"
Contextual Info: OPTICAL ELECTRONICS INC OhE D g ^7^381, 00□ 17i□ □ | 9918 DATA AND SPECIFICATIONS DESCRIPTION AND INSTRUCTIONS T '7 ? '0 7 -/O Optical Electronics Incorporated W IDE BANDWIDTH HIGH GAIN OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • G AIN B A N D W ID TH PRODUCT:

TELEDYNE PHILBRICK 1435

Abstract: TELEDYNE PHILBRICK 9918are 9918 DDD1711 sonar rf front end "optical electronics" optical electronics TELEDYNE PHILBRICK f to v 9918A
Contextual Info: OPTICAL ELECTRONICS INC OhE D g ^7^381, 00□ 17i□ □ | 9918 DATA AND SPECIFICATIONS DESCRIPTION AND INSTRUCTIONS T '7 ? '0 7 -/O Optical Electronics Incorporated W IDE BANDWIDTH HIGH GAIN OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • G AIN B A N D W ID TH PRODUCT:

0PI2152

Abstract: OP12152 VDC111
Contextual Info: OPTEK- TECHNOLOGY INC OhE D | bTIflSÛD D0G025Ô 0 | Optoelectronics D ivision T R W Electronic Com ponents Group 1 9 8 7 C ost S a v e r P ro d u c t! C all T R W fo r m ore in fo rm a tio n ! Product Bulletin 5204 January 1985 T R w T~ 41-23 Y _ Optically Coupled Isolators

Contextual Info: N AMER PHILIPS/DISCRETE ^53=131 O D l M i n b OhE D l LB E /LC E 2003S LB E /LC E 2009S T - 3 3 -O S ' MICROWAVE LINEAR POWER TRANSISTORS N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold metallization

OPI2152

Contextual Info: OPTEK-JECHNOLOGY INC OhE D | t^ESflO OOGOSSâ □ | O p to e le c tr o n ic s D iv is io n TRW Electronic Components Group Product Bulletin 5204 January 1985 19 8 7 Cost S a v e r Pro du ct! Call T R W fo r m ore in fo rm a tio n ! T~ - H 7 # ? iV I-2 3 ' _

emulate

Abstract: Emulation EEPROM AN931 M39432
Contextual Info: AN931 APPLICATION NOTE On-Chip Hardware EEPROM Emulation Versus Flash Memory Software Solutions FLASH+ technology, from STMicroelectronics, was developed to allow the advantages of EEPROM and those of Flash memory to be obtained from a single device, fabricated on a single chip. Based on Flash

001BH

Abstract: AN931 M39432
Contextual Info: AN931 APPLICATION NOTE ON-CHIP HARDWARE EEPROM EMULATION versus FLASH MEMORY SOFTWARE SOLUTIONS by Y. BAHOUT INTRODUCTION The new FLASH+ products from SGS-THOMSON offer single chip solutions which combine Flash and EEPROM memory functionality. Based on Flash memory technology, the devices integrate all the control

4 bit gray code synchronous counter

Abstract: XC3000 XC3020 X3088
Contextual Info: Implementing State Machines in LCA Devices  XAPP 027.001 Application Note BY PETER ALFKE AND BERNIE NEW Summary This Application Note discusses various approaches that are available for implementing state machines in LCA devices. In particular, the one-hot-encoding scheme for medium-sized state machines is discussed.

CXC320

Abstract: TB 5843 CXC20C cxc400 CXC300 CXC81 CXC18C CXC935 CXC11 100A249
Contextual Info: R ectifier D iodes ~ Capsule types Type ^RRM Range ^F AV Ths55°C ^F(RMS) @ 25°C If @ 25°C I fSM(2) 10m s V R=s60% V R^ 1 0 V ^RRM (Note 2) (Note 2) I2t (2) 10m s I rrm (V) (A) (A) (A) (A) (A) (Note 2) (A2S) SWxCXC300 200-1500 650 1170 1000 5500 6050 183 x 103

delta rj45

Abstract: RJGE
Contextual Info: iSkltELM SPECIFICATION FOR APPROVAL Rev.: A C u sto m e r P a r t No.: Delta P a r t No.: RJGE-12A 6110D-R P a r t Nam e: RJ45 IdM 1000 B a g e - T 12 Port (g o H |) CofipUANT 1. M e c h a n i c a l D i m e n s i o n : A l.B0[0.071]M AX Y e llow /G reen

RJGE-12AB6410BR

Abstract: RJGE1 RJGE RJGE-12 12 pin RJ45 LED
Contextual Info: A . ftELM SPECIFICATION FOR APPROVAL Rev.: B Customer Part No.: Delta Part No.: RJÖE-12AB6410BR Part Name: RJ45 IÖM 1000 B ase-T 12 Port $oH£ CoflpÚANT 1. M e c h a n i c a l D i m e n s i o n : 1.80[0.071]MAX I $ 1.10 [O.iaijREF 10.89 [0.429] 1.20 [0.047]REF

STDA05HE

Abstract: STDA10 STDA10FR STDA10HE STDA15HE
Contextual Info: R S M ELECTRON/SENSITRCN ’T'-Jo l3 -O rlr 15E 0 | 7S03b5Q Q0DQ7Mfi 1 | LOW PROFILE 17 AMP CENTER TAP AND DOUBLER ASSEMBLIES G EN ERA L PURPOSE, FAST RECO VERY, SUPER FAST RECO VERY M AXIM U M RATINGS PIV PER LEG TYPE NUMBER AVERAGE OUTPUT C U R R E N T Tc = CASE

p848

Contextual Info: SIEMENS Mini-NPN-Silizium-Fototransistor Mini-Silicon NPN Phototransistor SFH 305 1 .1 5 . 0 .9 0 o m fO CN 0 .5 , 0 .4 C o lle c to r SFH 305 C a th o d e (SFH 405) 1) D e ta chin g a re a fo r to ols, fla s h not tru e to size . Ap p ro x. w eight 0.0 2 g

augat

Abstract: MIL-T-10727 intcon MIL-G-45024
Contextual Info: AUGAT/ INTCON PRDT GP 57E D • 10^5335 0 0 02 6 1 4 30b H A U I P Female 4 Row Box Pac Features ■ High density ■ 40 to 264 Single Cluster 80 to 320 Double Cluster ■ UL Recognized % Materials ■ Insulator: Polyphenylene Sulfide UL94V0 ■ Contact: Copper alloy per Federal Specifica­

N283CH

Abstract: N1200CH N490CH S0609 N105PH12 N600CH TI 45-600 BLA06 n880ch
Contextual Info: Phase Control Thyristors ~ Capsule types Type V DRM V R R M I t AV ^T(R M S) Range T,55°C @ 25°C IT @25°C -^TSM(l) ^ TSM (2) 10ms 10ms I2t(2) di/dt Non- V r^60% VR^10V Re p/Rep 25°C ^RRM (Note 5) (Note 4) (A) (Note 1) (A2s) 1000/500 (Note 1) (Note 1)

Contextual Info: am HIGH RELIABILITY SURFACE MOUNT RESISTOR MCHP M e ta l G la z e 1Mth ic k film e le m e n t fire d a t 1 0 0 0 C to s o lid c e r a m ic s u b s tra te SERIES H ig h te m p e r a tu r e d ie le c tric c o a tin g • Reliable Metal G laze technology • Superb solderability - reflow & wave

BUZ50C

Abstract: T0220AB
Contextual Info: PowerMQS transistor N AUER PHILIPS/DISCRETE BUZ50C OLE D • [^53^31 0014570 1 ■ " T -3 1 -1 1 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

RX1011B350Y

Abstract: broad-band Microwave Class-C Transistor Amplifiers
Contextual Info: N AMER P H I L I P S / D I S C R E T E bbSB^l ObE D 0 0 1 5 1 7 ^ fi D EVELOPM EN T DATA RX1011B350Y T h is data sheet contains advance inform ation and specifications are subject to change w ith out notice. r-f 33-/S" PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in common-base, class-C

BUZ60

Abstract: KB53 T0220AB
Contextual Info: PowerMOS transistor_ BUZ60 N AMER PHILIPS/DISCRETE ObE D • bbSBTBl 0014475 1_ ■ May 198T GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: Sonet Clock Recovery Module SCRM-622 The Vectron SCRM-622 is a PLL based single package solution for clock and data recovery CDR at SONET OC-12/CCITT STM-4 rates. Unlike other high performance CDR modules, which require external components and crystal oscillators, the SCRM-622 is self-contained. No external