OF TRANSISTORS ACCORDING TO Search Results

OF TRANSISTORS ACCORDING TO Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

OF TRANSISTORS ACCORDING TO Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SD1528-06 Abstract: MSC81600M MSC1000M MSC1000MP MSC1004M MSC1004MP MSC81035M MSC81035MP SD1528-08 SD1530-01 Contextual Info: SILICON POWER TRANSISTORS AVIONICS TRANSISTORS SGS-THOMSON offers the broadest variety of product in the industry specifically characterized for avionics applications. Devices are grouped according to frequency range of application and are available in several package	Original	MSC1000M MSC1000MP MSC1004M MSC1004M( AM80912-005 AM80912-015 AM80912-030 AM80912-085 AM0912-150 SD1528-06 MSC81600M MSC1000M MSC1000MP MSC1004M MSC1004MP MSC81035M MSC81035MP SD1528-08 SD1530-01	PDF
HALL EFFECT 21E Abstract: thyristor aeg transistor SMD 12E transistor Common Base configuration TRANSISTOR SMD MARKING CODE 2s aeg thyristor NPN transistor bc 148 lg smd transistor diode marking code YF MARKING SMD TRANSISTOR GG Contextual Info: RF Transistors Data Book 1997 Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. For example: B Material	Original	26-Feb-97 HALL EFFECT 21E thyristor aeg transistor SMD 12E transistor Common Base configuration TRANSISTOR SMD MARKING CODE 2s aeg thyristor NPN transistor bc 148 lg smd transistor diode marking code YF MARKING SMD TRANSISTOR GG	PDF
2sc536 Abstract: sanyo 2033 sanyo 2sc536 2SC536 transistor 2SC536K 3 JM 2sC536 sanyo 2SC536SPA 2005A 2SC3330 Contextual Info: SANYO SEMCONtUCTOR CORP 32E 1 EB 7n707h 0001213 :T T H -z -? -/7 N P N Epitaxial Planar Silicon Transistors Small Signal General-Purpose Amp Applications ^ -Features . The 2SC536 is classified into 2 types of SPA, NP according to the case outline.	OCR Scan	7cici707b D333J 2SC536 T-91-20 SC-43 sanyo 2033 sanyo 2sc536 2SC536 transistor 2SC536K 3 JM 2sC536 sanyo 2SC536SPA 2005A 2SC3330	PDF
2SC2786 Contextual Info: ST 2SC2786 NPN Silicon Epitaxial Planar Transistor for FM RF amplifier and local oscillator of FM tuner. The transistor is subdivided into three groups M, L, and K, according to its DC current gain. On special request, these transistors manufactured in different pin configurations.	Original	2SC2786 100MHz 2SC2786	PDF
2SC2786 Contextual Info: ST 2SC2786 NPN Silicon Epitaxial Planar Transistor for FM RF amplifier and local oscillator of FM tuner. The transistor is subdivided into three groups M, L, and K, according to its DC current gain. On special request, these transistors manufactured in different pin configurations.	Original	2SC2786 100MHz 2SC2786	PDF
2SC2786 Abstract: 107MHZ hFE-200 to-92 npn Contextual Info: ST 2SC2786 NPN Silicon Epitaxial Planar Transistor for FM RF amplifier and local oscillator of FM tuner. The transistor is subdivided into three groups M, L, and K, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	2SC2786 100MHz 2SC2786 107MHZ hFE-200 to-92 npn	PDF
2SD882S Contextual Info: ST 2SD882S-Q/P/E NPN Silicon Epitaxial Planar Transistor for the output stage of 0.75W audio, voltage regulator, and relay driver. The transistor is subdivided into three groups Q, P and E, according to its DC current gain. On special request, these transistors can be	Original	2SD882S-Q/P/E 200mA 100MHz 2SD882S	PDF
Contextual Info: ST 2SD882S-Q/P/E NPN Silicon Epitaxial Planar Transistor for the output stage of 0.75W audio, voltage regulator, and relay driver. The transistor is subdivided into three groups Q, P and E, according to its DC current gain. On special request, these transistors can be	Original	2SD882S-Q/P/E 200mA 100MHz	PDF
2SD882S-Q Contextual Info: ST 2SD882S-Q/P/E NPN Silicon Epitaxial Planar Transistor for the output stage of 0.75W audio, voltage regulator, and relay driver. The transistor is subdivided into three groups Q, P and E, according to its DC current gain. On special request, these transistors can be	Original	2SD882S-Q/P/E 200mA 100MHz 2SD882S-Q	PDF
2SB564 Abstract: 2SB564, transistor Contextual Info: ST 2SB564 PNP Silicon Epitaxial Planar Transistor for use in driver and output stages of audio frequency amplifiers. The transistor is subdivided into three groups M, L and K according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	2SB564 2SB564 2SB564, transistor	PDF
transistor c 9018 Abstract: transistor 9018 NPN NPN Silicon Epitaxial Planar Transistor 9018 9018 transistor NPN 9018 transistor transistor 9018 Contextual Info: ST 9018 NPN Silicon Epitaxial Planar Transistor for AM/FM amplifier and local oscillator of FM/VHF tuner applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be	Original		PDF
2SB564 Abstract: 2SB564, transistor Contextual Info: ST 2SB564 PNP Silicon Epitaxial Planar Transistor for use in driver and output stages of audio frequency amplifiers. The transistor is subdivided into three groups M, L and K according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	2SB564 2SB564 2SB564, transistor	PDF
2SC2786 Contextual Info: ST 2SC2786 NPN Silicon Epitaxial Planar Transistor for FM RF amplifier and local oscillator of FM tuner. The transistor is subdivided into three groups M, L, and K, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	2SC2786 100MHz 2SC2786	PDF
2SB564 Contextual Info: ST 2SB564 PNP Silicon Epitaxial Planar Transistor for use in driver and output stages of audio frequency amplifiers. The transistor is subdivided into three groups M, L and K according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	2SB564 2SB564	PDF

2SC2002 equivalent Abstract: 2SC2002 2SC2002 pin configuration driver transistor hfe 60 Contextual Info: ST 2SC2002 NPN Silicon Epitaxial Planar Transistor for use in driver stage of high voltage audio equipments. The transistor is subdivided into three groups, M, L and K, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	2SC2002 300mA 300mA, -10mA 2SC2002 equivalent 2SC2002 2SC2002 pin configuration driver transistor hfe 60	PDF
2SB564 Contextual Info: ST 2SB564 PNP Silicon Epitaxial Planar Transistor for use in driver and output stages of audio frequency amplifiers. The transistor is subdivided into three groups M, L and K according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	2SB564 2SB564	PDF
2SD882S-Q Abstract: transistor base collector current 200mA Contextual Info: ST 2SD882S-Q/P/E NPN Silicon Epitaxial Planar Transistor for the output stage of 0.75W audio, voltage regulator, and relay driver. The transistor is subdivided into three groups Q, P and E, according to its DC current gain. On special request, these transistors can be	Original	2SD882S-Q/P/E 200mA 100MHz 2SD882S-Q transistor base collector current 200mA	PDF
2SC2002 Abstract: NPN Transistor TO92 300ma 2SC200 transistor 2sc2002 2SC2002 L 2SC-2002 Contextual Info: ST 2SC2002 NPN Silicon Epitaxial Planar Transistor for use in driver stage of high voltage audio equipments. The transistor is subdivided into three groups, M, L and K, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	2SC2002 300mA 300mA, -10mA 2SC2002 NPN Transistor TO92 300ma 2SC200 transistor 2sc2002 2SC2002 L 2SC-2002	PDF
2SC2002 Abstract: NPN Transistor TO92 300ma 2SC-2002 transistor 2sc2002 hFE-200 to-92 npn Contextual Info: ST 2SC2002 NPN Silicon Epitaxial Planar Transistor for use in driver stage of high voltage audio equipments. The transistor is subdivided into three groups, M, L and K, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	2SC2002 300mA 300mA, -10mA 2SC2002 NPN Transistor TO92 300ma 2SC-2002 transistor 2sc2002 hFE-200 to-92 npn	PDF
2SD1616 Abstract: 2sd1616 datasheet 2sd1616a Contextual Info: ST 2SD1616 / 2SD1616A NPN Silicon Transistor The 2SD1616 / 2SD1616A are designed for use in driver and output stages of AF amplifier general purpose application. The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be	Original	2SD1616 2SD1616A 2SD1616A 2SD1616 100mA 0V/120V 2sd1616 datasheet	PDF
2SD1616 Abstract: 2SD1616A Contextual Info: ST 2SD1616 / 2SD1616A NPN Silicon Transistor The 2SD1616 / 2SD1616A are designed for use in driver and output stages of AF amplifier general purpose application. The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be	Original	2SD1616 2SD1616A 2SD1616A 2SD1616 100mA 0V/120V	PDF
2SD1616 Abstract: 2SD1616A Contextual Info: ST 2SD1616 / 2SD1616A NPN Silicon Transistor The 2SD1616 / 2SD1616A are designed for use in driver and output stages of AF amplifier general purpose application. The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be	Original	2SD1616 2SD1616A 2SD1616A 2SD1616 0V/120V -100mA	PDF
RTIP144C Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.	OCR Scan	2SB1186 2SB1186A 2SA1304 2SA1306 2SA1305 2SB1274 2SB1015 2SB1133 2SB1287 2SB1185 RTIP144C RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C	PDF
BFQ67W Abstract: PMBT3640 PMBTH10 BFM520 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Wideband Transistors 1997 Nov 24 File under Discrete Semiconductors, SC14 Philips Semiconductors RF Wideband Transistors Selection guide FIRST GENERATION NPN WIDEBAND TRANSISTORS fT up to 3.5 GHz PACKAGE	Original	OT143 OT223 OT323 BFT25 BF747 BF547 BF547W BFS17 BFS17W BF689K BFQ67W PMBT3640 PMBTH10 BFM520	PDF

OF TRANSISTORS ACCORDING TO Search Results

OF TRANSISTORS ACCORDING TO Result Highlights (5)

OF TRANSISTORS ACCORDING TO Datasheets Context Search

SD1528-06

HALL EFFECT 21E

2sc536

2SC2786

2SC2786

2SC2786

2SD882S

2SD882S-Q

2SB564

transistor c 9018

2SB564

2SC2786

2SB564

2SC2002 equivalent

2SB564

2SD882S-Q

2SC2002

2SC2002

2SD1616

2SD1616

2SD1616

RTIP144C

BFQ67W