OF TRANSISTOR 158 Search Results

OF TRANSISTOR 158 Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

OF TRANSISTOR 158 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BFR96 Abstract: BFR96 TRANSISTOR transistor bfr96 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state-of-the-art microwave transistor chip which features fine-line geometry, ion-implanted arsenic emitters and gold top metallization. This transistor is intended for low-to-medium power amplifiers	OCR Scan	BFR96 BFR96 D10b3 BFR96 TRANSISTOR transistor bfr96	PDF
Contextual Info: DISCRETE SEMICONDUCTORS DAT BFT93W PNP 4 GHz wideband transistor Product specification Supersedes data of November 1992 March 1994 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic,	Original	BFT93W OT323 BFT93W BFT93. MBC870 R77/01/pp22	PDF
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan		PDF
SC15 Abstract: LTE42008R Data Handbook sc15 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LTE42008R NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 24 Philips Semiconductors Product specification NPN microwave power transistor	Original	LTE42008R OT440A SCA53 127147/00/02/pp12 SC15 LTE42008R Data Handbook sc15	PDF
BFG480W Abstract: BC817 RF POWER TRANSISTOR NPN 3GHz Contextual Info: DISCRETE SEMICONDUCTORS M3D124 BFG480W NPN wideband transistor Preliminary specification Supersedes data of 1998 Mar 06 File under Discrete Semiconductors, SC14 1998 Jul 09 Philips Semiconductors Preliminary specification NPN wideband transistor BFG480W FEATURES	Original	M3D124 BFG480W SCA60 125104/00/02/pp16 BFG480W BC817 RF POWER TRANSISTOR NPN 3GHz	PDF
2SC4185 Abstract: nec 2571 nec 2571 4 pin C 4804 transistor 60.0000 oscillator 1900000 Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4185 UHF OSCILLATOR AND VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4185 is an NPN silicon epitaxial transistor intended for use as a UHF oscillator and a mixer in a tuner of a TV receiver. The device	Original	2SC4185 2SC4185 nec 2571 nec 2571 4 pin C 4804 transistor 60.0000 oscillator 1900000	PDF
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4185 UHF OSCILLATOR AND VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4185 is an NPN silicon epitaxial transistor intended for use as a UHF oscillator and a mixer in a tuner of a TV receiver. The device	OCR Scan	2SC4185 2SC4185 MAXIM484	PDF
10A060 Abstract: 20989 78561 MAG 1832 55FT Contextual Info: 10A060 6 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10A060 is a COMMON EMITTER transistor capable of providing 6 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes	Original	10A060 10A060 20989 78561 MAG 1832 55FT	PDF
fe 8622 Abstract: 422-371 23A025 521603 18896 Contextual Info: 23A025 2.5 Watts, 20 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 23A025 is a COMMON EMITTER transistor capable of providing 2.5 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes	Original	23A025 23A025 fe 8622 422-371 521603 18896	PDF
23A017 Abstract: 33797 4561 140452 Contextual Info: 23A017 1.7 Watts, 20 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 23A017 is a COMMON EMITTER transistor capable of providing 1.7 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes	Original	23A017 23A017 33797 4561 140452	PDF
ic 4040 Abstract: IC 7427 134179 IC 8256 10AM12 153637 Contextual Info: 10AM12 12 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10AM12 is a COMMON EMITTER transistor capable of providing 12 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes	Original	10AM12 10AM12 150oC 200o--- ic 4040 IC 7427 134179 IC 8256 153637	PDF
bdl 40 Abstract: l43 transistor transistor marking 2d ghz 9335 895 BFG480W Contextual Info: DISCRETE SEMICONDUCTORS sheet BFG480W NPN wideband transistor Preliminary specification Supersedes data of 1998 Mar 06 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Jul 09 PHILIPS Philips Semiconductors Preliminary specification NPN wideband transistor	OCR Scan	BFG480W BFG480W SCA60 04/00/02/pp1 bdl 40 l43 transistor transistor marking 2d ghz 9335 895	PDF
transistor NEC b 882 Abstract: transistor NEC b 882 p 2SC4186 NEC 2562 NPN SILICON EPITAXIAL TRANSISTOR Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4186 UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4186 is an NPN silicon epitaxial transistor intended for use in millimeters as a UHF oscillator and a mixer in a tuner of a TV receiver. The device	Original	2SC4186 2SC4186 transistor NEC b 882 transistor NEC b 882 p NEC 2562 NPN SILICON EPITAXIAL TRANSISTOR	PDF
4435 ic Abstract: data sheet IC 4435 IC 2272 DATASHEET IC 7446 1140-17 02580 2482 TRANSISTOR data sheet ic 7446 IC 7446 A 158314 Contextual Info: 80143 1.0 Watts, 15 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 80143 is a COMMON EMITTER transistor capable of providing 1.0 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes	Original		PDF

8054 transistor Abstract: TRANSISTOR 4847 AT-41500 s415 RF s415 TRANSISTOR c 5803 AT-41586 S21E chip die npn transistor AT41500 Contextual Info: AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Data Sheet Description/Applications Features The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be	Original	AT-41500 AT-41500 AT-41500-GP4 045mm AV01-0077EN AV01-0438EN 8054 transistor TRANSISTOR 4847 s415 RF s415 TRANSISTOR c 5803 AT-41586 S21E chip die npn transistor AT41500	PDF
T62 MARKING Abstract: sm 3316 TBB 469 Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4186 UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4186 is an NPN silicon epitaxial transistor intended for use in millimeters as a UHF oscillator and a m ixer in a tuner of a TV receiver. The device	OCR Scan	2SC4186 2SC4186 T62 MARKING sm 3316 TBB 469	PDF
BFG480W Abstract: C5 MARKING TRANSISTOR 9335 895 MW1418 TRANSISTOR 9335 Contextual Info: DISCRETE SEMICONDUCTORS M3D124 BFG480W NPN wideband transistor Product specification Supersedes data of 1998 Jul 09 1998 Oct 21 Philips Semiconductors Product specification NPN wideband transistor BFG480W FEATURES PINNING • High power gain PIN DESCRIPTION	Original	M3D124 BFG480W MSB842 SCA60 125104/00/03/pp16 BFG480W C5 MARKING TRANSISTOR 9335 895 MW1418 TRANSISTOR 9335	PDF
30054 Abstract: transistor 30054 8560 cob 2a82 17052 30054 transistor 326970 Diode 2A8 150401 28438 Contextual Info: 2A8 0.5 Watts, 20 Volts, Class A Linear to 2000 MHz GENERAL DESCRIPTION The 2A8 is a COMMON EMITTER transistor capable of providing 0.5 Watts of Class A, RF output power at 2000 MHz. This transistor is specifically designed for general Class A amplifier applicatons. It utilizes gold	Original		PDF
67334 Abstract: data sheet IC 74266 74266 IC 74160 IC 74160 DATA SHEET ic 74266 data sheet IC 7474 IC 4614 IC 7474 datasheet 55295 Contextual Info: 23A005 0.5 Watts, 20 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 23A005 is a COMMON EMITTER transistor capable of providing 0.5 Watt of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes gold	Original	23A005 23A005 Temper5376 67334 data sheet IC 74266 74266 IC 74160 IC 74160 DATA SHEET ic 74266 data sheet IC 7474 IC 4614 IC 7474 datasheet 55295	PDF
BV E1 382 1229 Abstract: transistor BF 502 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFT93W PNP 4 GHz wideband transistor Product specification Supersedes data of November 1992 March 1994 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain	Original	BFT93W OT323 BFT93. BFT93W MBC870 OT323. R77/01/pp22 BV E1 382 1229 transistor BF 502	PDF
TRANSISTOR D 5702 Abstract: BFT93 BFT93W MLB436 transistor BF 697 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFT93W PNP 4 GHz wideband transistor Product specification Supersedes data of November 1992 March 1994 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain	Original	BFT93W OT323 BFT93W BFT93. MBC870 R77/01/pp22 TRANSISTOR D 5702 BFT93 MLB436 transistor BF 697	PDF
BFG480W Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D124 BFG480W NPN wideband transistor Product specification Supersedes data of 1998 Jul 09 1998 Oct 21 NXP Semiconductors Product specification NPN wideband transistor BFG480W FEATURES PINNING • High power gain PIN DESCRIPTION	Original	M3D124 BFG480W MSB842 R77/03/pp16 BFG480W	PDF
23A008 Abstract: 23A008-2 305303 69099 75902 79121 Contextual Info: 23A008 0.5 Watts, 20 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 23A008 is a COMMON EMITTER transistor capable of providing up to 0.5 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes	Original	23A008 23A008 Tempe5384 23A008-2 305303 69099 75902 79121	PDF
2SC3545 Abstract: LEN-160 MARKING TRANSISTOR T44 Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3545 UHF OSCILLATOR AND MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION The 2SC3545 is an NPN silicon epitaxial transistor intended for use as UHF oscillator and mixer in a tuner of a TV receiver. The device features stable oscillation and small frequency drift against	Original	2SC3545 2SC3545 LEN-160 MARKING TRANSISTOR T44	PDF

OF TRANSISTOR 158 Search Results

OF TRANSISTOR 158 Result Highlights (5)

OF TRANSISTOR 158 Datasheets Context Search

BFR96

2sb504

SC15

BFG480W

2SC4185

10A060

fe 8622

23A017

ic 4040

bdl 40

transistor NEC b 882

4435 ic

8054 transistor

T62 MARKING

BFG480W

30054

67334

BV E1 382 1229

TRANSISTOR D 5702

BFG480W

23A008

2SC3545