OF BFW 13 Search Results

BFW16A

Abstract: bfw16 transistor bfw16a BFW 16
Contextual Info: BFW 16 A NPN SILICON TRANSISTOR, EP ITAXIAL PLANAR , TRANSISTOR NPN SILIC IU M PLANAR EPITAXIAL Final stage of the wide band vertical amplifier in high speed osciloscope Etage de sortie du balayage vertical large bande pour oscilloscopes rapides v CEO 25 V

BFW16

Abstract: TRANSISTOR BFW 16 bfw 10 transistor BFW16A application of transistor BFW 10 TRANSISTOR BFW 11 Q62702-F319 transistor bfw16a t 326 Transistor bfw 16 transistor
Contextual Info: B F W 1 6A NPN Silicon planar RF transistor BFW 16 A is an epitaxial NPN silicon planar RF transistor in a case 5 C 3 DIN 41873 TO -39 . The collector is electrically connected to the case. This transistor is designed for universal application up into the GHz range, e.g. for driver and output stages of

GL+7837

Contextual Info: Gl BDE T> • 7*12*1237 QQBD'ib'i 1 H M vi>K¿.3 BFW 16A BFW 17A S C S - T H O M S O N lu í * ® s G S-THOMSON CATV-MATV AMPLIFIERS DESCRIPTION The BFW 16A and BFW 17A are multi-emitter sili­ con planar epitaxial NPN transistors in Jedec TO-39 metal case, with extremely good intermodulation

BFW17A

Abstract: BFW transistors BFW 100 BFW16A transistors BFW16A bfw16a-bfw17a bfw1 bfw 11
Contextual Info: BFW16A BFW17A CATV-MATV AMPLIFIERS DESCRIPTION The BFW 16A and BFW 17A are multi-emitter silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, with extremely good intermodulation properties and high power gain. They are primarily intended for final and driver stages in channel-and

BFW16A

Abstract: 16ab BFW17A
Contextual Info: SGS-THOMSON R!tlD EæilLI(g'iri iD(SS BFW16A BFW17A CATV-MATV AMPLIFIERS D E S C R IP T IO N The BFW 16Aand BFW 17Aare multi-emitter silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, with extremely good intermodulation properties and high power gain. They are primarily

of BFW 13

Abstract: BFS3565 Samwha code BFS3580A0
Contextual Info: Features Simple to handle and inexpensive in price Available in various configurations to conform to the wiring materials in use and the characteristics as required. Absorbs noise effectively because of the impedance over 30 in high frequency band From 10 to 1000MHz .

Contextual Info: EMI BEAD FILTERS PATENTED FEATURES ・Simple to handle and inexpensive in price. ・Available in various configurationgs to conform to the wiring materials usd the characteristics as required. ・Absorbs noise effectively because of the impedance over 30Ω in high frequency band

bfw 106 c

Abstract: BFW16 Q62702-F319 transistor BFW 10 bfw16a
Contextual Info: E5C D fi235bQ5 Q0047ES 1 H S I E G • NPN Silicon RF Broadband Transistor BFW 16 A SIEMENS AKTIENGESELLSCHAF ^^-'31-2.3 BFW 16 A is an epitaxial NPN silicon planar RF transistor in TO 39 metal case 5 C 3 DIN 41 87 3 intended for general applications up to the GHz range, e.g. for

din 3141

Abstract: BFW92A transistor bfw 88 bfw 92 bfw 96
Contextual Info: BFW 92 A TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Wide band RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 1 BFW92A Marking Plastic case XTO 50 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings

BFS3565

Abstract: BFS3550A BFS3550 BFS2550 BFS3510 BFD3550 BFD2550 BFS3580 BFD3565 BFD3512R2
Contextual Info: EMI BEAD FILTERS PATENTED FEATURES • • • • • • Simple to handle and inexpensive in price Available in various configurations to conform to the wiring materials in use the characteristics as required. Absorbs noise effectively because of the impedance over 3QQ in high frequency band (from 10 to 1000 MHz).

TRANSISTOR b 772 p

Abstract: bfw 16 transistor BFW 72 TRANSISTOR BFW 16
Contextual Info: E5C D • fi235bQS 0004725 1 H S I E 6 NPN Silicon RF Broadband Transistor BFW 16 A SIEMENS AKTIENGESELLSCHAF BFW 16 A is an epitaxial NPN silicon planar RF transistor In TO 39 metal case 5 C 3 DIN 41873 intended for general applications up to the GHz range, e.g. for

BFS3565

Abstract: samwha date code samwha wl
Contextual Info: EMI BEAD FILTERS PATENTED FEATURES °§ Simple to handle and inexpensive in price. °§ Available in various configurations to conform to the wiring materials in use the characteristics as required. °§ Absorbs noise effectively because of the impedance over 30•ÿ

SV1AC material

Abstract: imi 6050 SN05N BFS3565 T314 P4V1 SN20 SN-20
Contextual Info: IMI Seal file rs FatefMerf Features • Simple to handle and inexpensive in price. • Available in various configurations to conform to the wiring materials in use and the characteristics as required. • Absorbs noise effectively because of the impedance over 30 Q in high frequency band

transistor BD 540

Abstract: Transistor BFT 99 Transistor BFR 39 BFW 10 fet Transistor BFR 80 Transistor BFT 10 transistor BFT 41 371b Transistor BFT 42 TRANSISTOR bd 108
Contextual Info: 6 0 9 y e a MICRO ELECTRONICS CORF D E | b [ m 7 f i a DOGObS? D | 02 82D 00657 D *7^ 12.5?“ N O. B C W 94 BCW 95 BCW 96 BCW 97 B C X 25 BCX26 B C X 40 B C X 45 BCX 46 ' ' M AXIM UM R A T IN G S V C E S A T Ul u. TYPE X P O L A R IT Y Medium Kower Am plifiers and Switches

BLY93A

Abstract: BLY78 BLY34 BLY97A BLY-38 BLW11 BLY91 BLW25 BLW19 bly 63
Contextual Info: BLW23 SILICON NPN VH F POWER TRANSISTOR • • • 5 W at 175 MHz, 28 V Minimum Gain 13 dB Designed to Withstand Infinite VSWR at Rated Output mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 55 V

samwha capacitor HOW TO ORDER

Abstract: samwha ferrite core R2B marking code FERRITE BEAD 100M BFR601009C8NF BFR601009C copper bond wire samwha capacitor spec R2F marking R2B FERRITE
Contextual Info: BEAD Filter Schematic and Characteristics BEAD Filter Item Specification Rated Voltage 50VDC Rated current Between terminals ① and ③ EMI Suppression Filter Withstanding test voltage between terminals ① and ② or ② and ③ 1A 125V DC Features Available in various configurations to conform to the wiring materials in use the characteristics as required.

7555 ID

Abstract: samwha ferrite core samwha capacitor R2B marking code samwha capacitor HOW TO ORDER BFS3565 samwha ferrite BFS3510A0 BFS3580A0 diode T 3512
Contextual Info: BEAD Filter Schematic and Characteristics BEAD Filter Item Specification Rated Voltage 50VDC Rated current Between terminals ① and ③ EMI Suppression Filter Withstanding test voltage between terminals ① and ② or ② and ③ 1A 125V DC Features Available in various configurations to conform to the wiring materials in use the characteristics as required.

BFT92A

Abstract: BFT93A BFG134 bf689 sot37 sot173 BFG34 BFQ52 bfg65 sot143 philips bfw92
Contextual Info: 52 RF/Microwave Devices First Generation RF W ideband Transistors fT to 3.5 GHz metal can fr/ lc Curve Polarity (1) (2) N PN NPN (3) (4) (5) NPN NPN NPN (6) (18) NPN NPN TO-39 surface mount plastic TO-72 TQ-92 BFY90 BF689K BF763 BFW30 SOt-37 ceramic SOT-122E

TRANSISTOR BFW 11

Abstract: BLW11 BLW13 BLY92 BLX67 BLY34 BLY97 transistor BFW 10 BLY53A BFy 90 transistor
Contextual Info: BLW13 S IL IC O N NPN V H F POWER T R A N SIST O R H IG H G A IN D R IV E R FOR 13 V FM A P P L IC A TIO N S • 3.7 5 W at 470 M Hz • Minim um Gain 7 dB • • Stripline Package Distributed Construction mechanical data TO-129 absolute maximum ratings Tease * 2 5 °C

BFW16

Abstract: BFW17 BFW 100 transistor BFW 100 bfw 10 transistor BFW transistors BFW16A transistors BFW16A
Contextual Info: Ç7 SC S -T H O M S O N KUiSTEMllKSS BFW 16A BFW17A S G S-THOMSON C A T V -M A T V A M P L IF IE R S DESCRIPTIO N The BFW 16A and BFW 17A are multi-emitter sili­ con planar epitaxial NPN transistors in Jedec TO-39 metal case, with extremely good intermodulation

BFR601009C8NF

Abstract: AOS PACKING BFR601009C8NE
Contextual Info: BEAD Filter BEAD Filter Features • Available in various configurations to conform to the wiring materials in use the characteristics as required. • A b s o rb s noise effectively b ecause of the im pedance ove r 30Q in high frequency band. • Automatic insertion type of taping is available.

BFW 100 transistor

Abstract: bfw92
Contextual Info: BFW92 ViSHAY _ ▼ Vishay Telefunken Silicon NPN Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications RF a m plifier up to G H z range. Features • High pow er gain • Low noise figure

SO 313

Contextual Info: VISHAY Vishay Dale Carbon Film Resistors, General Purpose, High Voltage T FEATURES • Single units to 10 W, 4 0 KV, ± 5% and m atched pairs BP to 20 W, 80 KV, ± 1% • Radial lug or axial lead • Supplied with Mylar heat shrink protective sleeve .002"

bfw 10 transistor

Abstract: HBFW BBFW BBRW dale leaded resistor code transistor BFW 10
Contextual Info: B, H Vishay Dale Carbon Film Resistors, General Purpose, High Voltage FEATURES • Single units to 10 W, 40 KV, ± 5% and matched pairs BP to 20 W, 80 KV, ± 1% • Radial lug or axial lead • Supplied with Mylar heat shrink protective sleeve .002" [.051mm] thick