OF BC 237 B Search Results

TS271

Contextual Info: r= 7 * 7 M , S C S -T H O M S O N M M I E J t ê T O i « T S 2 7 1 C ,I ,M PROGRAMMABLE SINGLE CMOS OPERATIONAL AMPLIFIERS • O FFSET NULL CAPABILITY by external compensation ■ SYMMETRICAL OUTPUT CURRENTS ■ HIGH GAIN BANDWIDTH PRODUCT ■THE TRANSFER FUNCTION IS LINEAR

Contextual Info: Æ T S C S -TH O M S O N TL081 TL081A - TL081B GENERAL PURPOSE SINGLE J-FET OPERATIONAL AMPLIFIERS • LOW POWER CONSUMPTION ■ WIDE COMMON-MODE UP TO Vcc+ AND DIFFERENTIAL VOLTAGE RANGE ■ LOW INPUT BIAS AND OFFSET CURRENT ■ OUTPUT SHORT-CIRCUIT PROTECTION

Contextual Info: r * 7 s 7 # S G S -T H O M S O N , » » i l L i t M s M i g i T L 0 8 2 T L 0 8 2 A - T L 0 8 2 B GENERAL PURPOSE DUAL J-FET OPERATIONAL AMPLIFIERS . LOW POWER CONSUMPTION . WIDE COMMON-MODE UP TO Vcc+ AND DIFFERENTIAL VOLTAGE RANGE . LOW INPUT BIAS AND OFFSET CURRENT

Contextual Info: S G S -1 H 0 M S 0 N T L 0 6 2 • IL IO T * » T L 0 6 2 A - T L 0 6 2 B LOW POWER DUAL J-FET OPERATIONAL AM PLIFIERS - VERY LOW POWER CONSUMPTION : ■ WIDE COMMON-MODE UP TO Vcc+ AND DIFFERENTIAL VOLTAGE RANGES > LOW INPUT BIAS AND OFFSET CURRENTS

Contextual Info: .100" X .100" Latch/Ejector Header Straight, 4 Wall, Compliant Pin Military with 3M’s 3518 polarizing key and centerbump polarization Optional ejector latches Optional polarizing posts Snap-in latches Mounting holes for securing header to board Dependable eye-of-the needle design

Contextual Info: — — £ Z • 7 7 '"i2e!E37 GGS34bl 4 ■ ^ F 7 ^ - I S S G S T H O M S O N T L 0 7 2 ^ 7 # S . T L 0 7 2 A -T L 0 7 2 B G S-THO M SO N 3 0 E LOW NOISE J-FET INPUT DUAL O P-AM Ps ■ LOW POWER CONSUMPTION ■ WIDE COMMON-MODE AND DIFFERENTIAL VOLTAGE RANGE

Contextual Info: /T 7 *J M S G S -T H O M S O N , [ M D M ilL K g W R Ü D Ê T S 7 5 1 4 PROGRAMMABLE V.23 MODEM WITH DTMF • PROGRAMMABLE MODES: - Modem 75bps transmit, 1200bps receive - Modem 1200bps transmit, 75bps receive - DTMF dialing - Call status tone detection

Contextual Info: D • DD 3 t 7 3 û ^ G S -T H O M S O N iy R ■SGTH s 6 S" TH0MS0N T S 2 7 M 2 C ,I,M 'r ‘7 9 - o z LOW POWER DUAL CMOS OP-AMPs ■ EXCELLENT PHASE MARGIN ON CAPACI­ TIV E LOADS ■ SYMETRICAL O U TPU T C URRENTS » LOW O UTPUT DYNAMIC IMPEDANCE ■ TH E TRAN SFER FUNCTIO N IS LINEAR

Contextual Info: - 7=^237 • ■ T ■ 'T - " 7 ° M S S- T HOMSON - TLO 8I T L 0 8 1 A -T L 0 8 1 B S G S -T H O M S O N iO J O T riM O O i S i S 6 QG234Ö1 3DE D J -F E T IN P U T SIN G LE O P -A M P s ■ LOW POWER CONSUMPTION WIDE COMMON-MODE AND DIFFERENTIAL

telefunken ta 350

Abstract: transistor BC 310 BF310 BC238C MOSFET sot-143 TO92 telefunken transistors Transistor A12 transistor AC 237 transistor bc 238 b
Contextual Info: TELEFUNKEN ELECTRONIC filC fi^ S O O ^ b D 0 0 0 5 1 0 ^ 5 • AL66 T ~ 3 f~ / y BF 310 TitUlFOMKIlIM electronic Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: General up to 100 MHz In common base conflguratlon Features: • Small feedback capacltance

cp1600

Abstract: CP1610 R09580 DB10 BC2 3
Contextual Info: .IN E RAI INSI R U M IN I R09580 PRELIMINARY INFORMATION 80K Cartridge ROM FEATURES PIN CONFIGURATION Mask Program able Storage Providing 3192 x 10 B it W ords 16 Bit: O n-C hip Address Latch C ontrol Decoder Program able M em ory Map C irc u itry to Place 8K ROM Page

Contextual Info: User’s Manual µPD753304 4-Bit Single-chip Microcontroller µPD753304 Document No. U12020EJ2V0UM00 2nd edition Date Published October 1997 N Printed in Japan 1997 [MEMO] 2 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide

transistor g23 mosfet

Abstract: FZj 111 TRANSISTOR BC 137 transistor g23 3576 transistor n channel mosfet marking Bc TRANSISTOR MARKING CODE A2S bf996 marking A1S TRANSISTOR SOT-23 marking g23
Contextual Info: TELEFUNKEN EL EC TR O N I C IALGG BF 996 Marked with: M 96 •¡mmiFMlMIN] electronic Creative Technofogies N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications: Input- and Mixerstages especially or UHF-tuners Features: • Integrated Gate protection diodes

Contextual Info: 240PIN DDR3 1333 Unbuffered DIMM 2GB With 128Mx8 CL9 JM1333KLU-2G Description Placement The JM1333KLU-2G is a 256M x 64bits DDR3-1333 Unbuffered DIMM. The JM1333KLU-2G consists of 16pcs 128Mx8 bits DDR3 SDRAMs in 68 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed

Contextual Info: Product Specifications PART NO.: VL33B2863F-K9S/F8S/E7S REV: 1.0 General Information 1GB 128M x 72 DDR3 SDRAM ULP ECC 240-PIN RDIMM Description The VL33B2863F is a 128M x 72 DDR3 SDRAM high density RDIMM. This memory module consists of nine CMOS 128M x 8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/PLL clock in BGA

cd 332 m

Abstract: varistor NS 332 594 BC varistor 300 v 595 BC varistor 250 v 595 BC varistor 295 v 595 BC varistor 595 BC varistor varistor 332 420 v 595 BC varistor ns 332 varistor
Contextual Info: Metal Oxide Varistors Bussmann 3 2 Series to 5 3 Series - Large MOV’s W ith Tabs F o r A p p lic a tio n s In S e c o n d a ry S u rg e A rre s to rs Bussmann’s metal oxide surge absorbers are larger diameter versions of the conventional metal oxide varistor

7805 sot23

Abstract: 2N3904 A30 surface mount transistor A40 Y5 series surface mount transistor PCI5V32BIT bc 7805 2b9 transistor PCI5V32 Y4 series surface mount transistor sb6 sot23
Contextual Info: PMC-Sierra, Inc. APPLICATION NOTE ISSUE 3 PM7975 NIC LASAR Opitcal Network Interface Card NIC PM7375 LASAR155 TM LASAR OPTICAL NETWORK INTERFACE CARD (NIC) REFERENCE DESIGN Preliminary Information Issue 3: March 1996 PMC-Sierra, Inc. 8501 Commerce Court, Burnaby, BC Canada V5A 4N3 604 668 7300

Contextual Info: Product Specifications PART NO: REV: 1.0 VL53B5263A-K9M-F8M-E7M General Information 4GB 512MX72 DDR3 SDRAM ECC 244 PIN Mini-RDIMM Description: The VL53B5263A is a 512M X 72 DDR3 SDRAM high density Mini-RDIMM. This memory module consists of eighteen CMOS 256Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered

Contextual Info: Product Specifications PART NO: REV: VL33B5663F-K9M-F8M-E7M 1.1 General Information 2GB 256MX72 DDR3 SDRAM ULP ECC RDIMM 240 PIN Description The VL33B5663F is a 256Mx72 DDR3 SDRAM high density RDIMM. This memory module consists of eighteen CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/

58210A4B0C1F4L5N2(DD),P12,16

Contextual Info: Product Specifications PART NO.: VL33B2K67F-K0SD REV: 1.0 General Information 16GB 2Gx72 DDR3 SDRAM ULP ECC REGISTERED DIMM 240-PIN Description The VL33B2K67F is a 2Gx72 DDR3 SDRAM high density RDIMM. This dual rank memory module consists of eighteen DDP CMOS 2Gx4 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, a 28-bit registered

Contextual Info: Product Specifications PART NO.: VL31B1G63E-K0/K9/F8/E7S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM VLP ECC UNBUFFERED DIMM 240-PIN Description The VL31B1G63E is a 1Gx72 DDR3 SDRAM high density UDIMM. This memory module is dual rank, consists of eighteen CMOS 512Mx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8pin MLF package. This module is a 240-pin dual in-line memory module and is intended for mounting into an edge

74101 ic

Abstract: ic 74102 UA7411
Contextual Info: w # SGS -THOMSON GENERAL PURPOSE SINGLE OPERATIONAL AMPLIFIERS • ■ ■ ■ ■ LARGE INPUT VOLTAGE RANGE NO LATCH-UP HIGH GAIN SHORT-CIRCUIT PROTECTION NO FREQUENCY COMPENSATION REQUIRED ■ SAME PIN CONFIGURATION AS THE UA709 N DIP8 P lastic Package

STR W 5453 C

Abstract: DK2101 CX1000 EN954 P1000 str w c 5453 kataloges
Contextual Info: BECKHOFF New Automation Technology PC-based Control für Windkraftanlagen Beckhoff | Offene Automatisierungslösungen für die Windkraft Die Nutzung erneuerbarer Energien, wie der Windkraft, hat sich heute als feste Größe in der weltweiten Energieversorgung etabliert. Insbesondere die globalen Anstrengungen zur Reduzierung des CO2-Ausstoßes gaben hierzu entscheidende Impulse.

Contextual Info: r = * 7 Z # S G S - T H O M , S O N n iK a w iim iC T iM iiK e g T S 2 7 L 2 C ,I,M VERY LOW POWER DUAL CMOS OPERATIONAL AMPLIFIERS • ■ ■ ■ ■ ■ EXCELLENT PHASE MARGIN ON CAPACITIVE LOADS SYMETRICAL OUTPUT CURRENTS LOW OUTPUT DYNAMIC IMPEDANCE THE TRANSFER FUNCTION IS LINEAR