OA 161 DIODE Search Results

SHINDENGEN DIODE

Abstract: 6SB60
Contextual Info: 7 'U r W i - K 7O S Bridge Diode S in g le I n - lin e P a cka g e OUTLINE DIMENSIONS U6SB 600V 6A « m • « æ s ip •U L K B J U L File No.E 14 2 4 2 2 • S iR E E , • S I F-SM g ftH R iffE i m a •S F IW Ü • * s . OA. ssœ •a s . mm. f a • Æ të H

TRANSISTOR SMD MARKING CODE A1 4pin

Contextual Info: KT1610 Series 4PIN LSOP PHOTOTRANSISTOR PHOTOCOUPLER cosmo Description Schematic 4 1 The KT1600 series consist of two infrared emitting diodes, connected in inverse parallel, optically coupled to a 3 2 phototransistor detector. They are packaged in a 4 pin

MURATA LQ

Abstract: 3V to 30V dc dc converter 3V to 5V dc dc converter AX1610
Contextual Info: Final Electrical Specifications LT1610 TECHNOLOGY l .7MHz, Single Cell Micropower DC/DC Converter u f m July 1998 FCRTURCS DCSCRIPTIOn • Uses Tiny Capacitors and Inductor ■ Internally Compensated ■ Low Quiescent Current: 30pA ■ Operates with V im as Low as 1V

Contextual Info: advanced P ow er Tec h n o lo g y APT2X100D100J 1000V 100A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES ! PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Freewheeling Diode

3un6

Contextual Info: 'O I 1 Advanced Technical Information wvv.wkvi'w^v.sv.v.viv.v.viv.v.viv.v.viv.v.v. IXGH 30N60BD1 IXGT 30N60BD1 IGBT with Diode V CES = 600 V = 60 A = 1.8 V = 100 ns ^C25 V CE sat

Contextual Info: G S-TH0nS0N s D7E D T54LS85 T74LS85 71S1E37 D O lS Ilt 3 I OW POWER SCHOTTKY i INTEGRATED CIRCUITS 67C 15 121 T - 4 5 - n 4 -B IT M A G N IT U D E C O M P A R A T O R S DESCRIPTION The T54LS85/T74LS85 is a 4-bit Magnitude Com­ parator which compares two 4-bit words A,B , each

Contextual Info: ADVANCED P o w er Te c h n o lo g y APT2X60D100J 1000V 60A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode

Contextual Info: ADVANCED POWER TECHNOLOGY b3E D 0557^ ÜDOllbfl 704 H A V P ADVANCED POW ER TECHNOLOGY' APT2X31D60J APT2X31D50J APT2X31D40J 600V 500V 400V 30A 30A 30A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS PRODUCT FEATURES

eakt

Contextual Info: ADVANCED POlilER TECHNOLOGY L3E J> 05S7TDT A 0D011b4 ObT H A V P d v a n c e d P ow er T e c h n o lo g y K 2 0 —! APT2X30D60J APT2X30D50J APT2X30D40J Ai O —! 600V 30A 500V 30A 400V 30A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES

Contextual Info: S G S -T H O M S O N » M iü K O T iM O O S M 5 4 /7 4 H C T 1 6 0 /1 6 1 M 5 4 /7 4 H C T 1 6 2 /1 6 3 SYNCHRONOUS PRESETTABLE 4-BIT COUNTER • HIGH SPEED fMAX = 50 MHz (TYP. AT Vcc = 5 V ■ LOW POWER DISSIPATION Ice = 4 mA (MAX.) AT 25 °C ■ OUTPUT DRIVE CAPABILITY

Contextual Info: A D V A N C E D PO WE R T E C H N O L O G Y b3E D • □ 2 5 7 R D ti 0 0 D 1 1 7 2 13S H A V P A dvanced P o w er Te c h n o l o g y APT2X61D60J APT2X61D50J APT2X61D40J 600V 500V 400V 60A 60A 60A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES

Contextual Info: ADVANCED POWER TECHNOLOGY b3E D • D2S7TDT 0001152 347 «AVP A d van ced P o w er Te c h n o l o g y APT2X61D100J APT2X61D90J APT2X61D80J 1000V 900V 800V 60A 60A 60A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS

IC 74LS160

Abstract: g4c2
Contextual Info: r z 7 ^ 7 # S G S -T H O M S O N l » [ i l g m [ i i M ( M @ S M 5 4 /7 4 H C T 1 60 /16 1 M 5 4 /7 4 H C T 1 6 2 /1 6 3 SYNCHRONOUS PRESETTABLE 4-BIT COUNTER . HIGHSPEED fM A X = 50 MHz (TYP. AT Vcc = 5 V • LOW POWER DISSIPATION Ice = 4 nA (MAX.) AT 25 °C

Contextual Info: 2 R 5 G 2 x 5 0 A • : O utline D raw ings FAST RECOVERY DIODE MODULE ■ # g Unit mm Mt.« J1— IS 6f.5 1T.B t lfl 6 IB ! F e a tu re s 1a 17.5 I ¿ f i • îË lil B îlB l*''îâ L ' • Short Reverse Recovery Time -ß Variety of C onnection M enu

tea 1601 t

Contextual Info: Bridge D iode Single In-line Package o u t l in e d i m e n s io n s U6SBD S tt 600V 6A m a • » Ü S IP K u /ir - y •U LϧâJ U L File No.E 1 4 2 4 2 2 • ¡ Ü iÎ Œ , • H I FSM iü R g ÎÎfS »SRSS mm. OA. » ¡s e . mm. fa mm RATINGS Absolute Maximum Ratings

Contextual Info: S ¡ ÿ G S- THOMSÔN i M2E D 7*12*1237 0033410 4 ISGTH S G S -T H O S flS O Ü T 7 4 L S 1 6 0 A / 1 6 1 A R itlQ tg ^ O d iL d Ô îls K Q K M Ô Ê i T 7 4 L S 1 6 2 A / 1 6 3 A LS160A/162A BCD DECADE COUNTERS LS161A/163A : 4-BIT BINARY COUNTERS • SYNCHRONOUS COUNTING AND LOADING

pin diagram of 74160

Abstract: 74160 function table pin diagram of 74163 74160 pin 74163 pin configuration 74ls161 counter pin configuration 74160 logic diagram of 74160 logic diagram 74160 74160 counter
Contextual Info: Signetics 74160, 74161, 74163, LS160A, LS161A, LS162A, LS163A Counters '160, '162 BCD Decade Counter '161, '163 4-Bit Binary Counter Logic Products Product Specification FEATURES • Synchronous counting and loading • Two Count Enable inputs for nbit cascading

Contextual Info: アキシャルダイオード Rectifier Diode Axial Diode •外観図 OUTLINE Unit : mm Weight : 1.06g （typ.） Package：AX14 600V 3.5A ① 特長 26.5 • 耐湿性に優れ高信頼性 • 高耐圧 Feature 26.5 7 ＋① ＊ 捺印面展開図 Marking

uPC2581

Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Contextual Info: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8

cd74hc161

Contextual Info: H A F R F R IS C D 7 4 H C 1 6 1 , C D 7 4 H C T 1 6 1 , SEMI CONDUCTOR C D 7 4 H C 1 6 3 , High Speed CMOS Logic Presettable Counters February 1998 Features • C D 7 4 H C T 1 6 3 Description CD74HC161, CD74HCT161 4-B it Binary Counter, Asynchronous Reset

Contextual Info: APT8030JVFR A dvanced P o w er Te c h n o l o g y 800V POWER MOSV 25A 0.300Í1 FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

ta7291s

Contextual Info: TA7291P/S BRIDGE DRIVER Unit in mm TA7291P/S are Bridge Driver with output voltage control. FEATURES: . A Modes Available CW/CCW/STOP/BRAKE . Output Current Up to l.OA(AVE) and 2.0A(PEAK) (TA7291P), and 0.4A(AVE) and 1.2A(PEAK)(TA7291S). . Wide Range of Operating Voltage: V^ q 0pr=4.5~18V

Contextual Info: APT5010JVFR A dvanced P o w er Te c h n o l o g y 500V POWER MOSV 44A 0.100n FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: APT10050JVFR A dvanced P o w er Te c h n o l o g y P O W E R 1000V 19A 0.500Í1 FREDFET M O S V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™