HCTS574DMSR
Abstract: HCTS574HMSR HCTS574KMSR HCTS574MS
Contextual Info: HCTS574MS August 1995 Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered Features • • • • • • • • • • • • • Pinouts 3 Micron Radiation Hardened CMOS SOS Total Dose 200K RAD Si SEP Effective LET No Upsets: >100 MEV-cm2/mg
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hcts574mso11utputs-55oc125oc+3hcts574dmsrhcts574hmsrhcts574kmsr
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HCTS574
Abstract: HCTS574DMSR HCTS574HMSR HCTS574KMSR HCTS574MS
Contextual Info: HCTS574MS August 1995 Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered Features • • • • • • • • • • • • • Pinouts 3 Micron Radiation Hardened CMOS SOS Total Dose 200K RAD Si SEP Effective LET No Upsets: >100 MEV-cm2/mg
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hcts574mso11utputs-55oc125oc+4hcts574hcts574dmsrhcts574hmsrhcts574kmsr
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HCTS574KMSR
Abstract: D2416 HCTS574 HCTS574DMSR HCTS574HMSR HCTS574MS
Contextual Info: HCTS574MS S E M I C O N D U C T O R August 1995 Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered Features • • • • • • • • • • • • • Pinouts 3 Micron Radiation Hardened CMOS SOS Total Dose 200K RAD Si
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hcts574mso11utputs-55oc125oc+705a/cm2hcts574ta14460ahcts574kmsrd2416hcts574dmsrhcts574hmsr
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HCTS574MS
Abstract: HCTS574DMSR HCTS574HMSR HCTS574KMSR
Contextual Info: HCTS574MS August 1995 Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered Features • • • • • • • • • • • • • Pinouts 3 Micron Radiation Hardened CMOS SOS Total Dose 200K RAD Si SEP Effective LET No Upsets: >100 MEV-cm2/mg
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Original
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hcts574mso11utputs-55oc125oc+3hcts574dmsrhcts574hmsrhcts574kmsr
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PDF
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