NY TRANSISTOR MOSFET Search Results

CP394R

Abstract: CEDM7004
Contextual Info: PROCESS CP394R Small Signal MOSFET Transistor N-Channel Enhancement-Mode Transistor Chip PROCESS DETAILS Die Size 15.7 x 15.7 MILS Die Thickness 3.9 MILS Gate Bonding Pad Area 3.9 x 3.9 MILS Source Bonding Pad Area 9.1 x 8.1 MILS Top Side Metalization Al-Si - 35,000Å

CP324

Abstract: 2n7002 12 2N7002 equivalent 2N7002 chip die transistor
Contextual Info: Central PROCESS TM Semiconductor Corp. CP324 Small Signal MOSFET Transistor N - Channel Enhancement-Mode Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 21.65 x 21.65 MILS Die Thickness 9.0 MILS Gate Bonding Pad Area 5.5 x 5.5 MILS Source Bonding Pad Area

ny transistor mosfet

Abstract: Bonding 2N7002 CP324 chip die transistor
Contextual Info: PROCESS CP324 Small Signal MOSFET Transistor N - Channel Enhancement-Mode Transistor Chip Central TM Semiconductor Corp. PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 21.65 x 21.65 MILS Die Thickness 9.0 MILS Gate Bonding Pad Area 5.5 x 5.5 MILS Source Bonding Pad Area

Contextual Info: 2000 CATALOG SENSITRON SEMICONDUCTOR 3HD852002 12A-Peak Low Side Dual MOSFET Driver Bipolar/CMOS/DMOS Process :eatures: • High Peak Output Current - 12A • Wide Operating Range - 4.5V to 18V • Low Supply Current - 450|iA w/Logic 1 Input • Low Output Impedance - 1 .0Q, Typical

ACT5101-1

Abstract: helicopter construction diode ux transistor 131-6 uses
Contextual Info: ACT5101-1 HIGH VOLTAGE 3-PHASE BRUSHLESS DC MOTOR DRIVE Features • 500VDC RATING CIRCUIT TECHNOLOGY www.aeroflex.com • 40 AMP CONTINUOUS CURRENT UP TO 85°C General Description • PACKAGE SIZE 3.0" X 2.1" X 0.39" • 4 QUADRANT CONTROL • 6 STEP TRAPEZOIDAL DRIVE CAPABILITY

250 amp IGBT FOR pwm DRIVE

Abstract: IGBT loss calculate mosfet 3918 ny transistor mosfet drive motor 40A with transistor P channel MOSFET
Contextual Info: ACT5101-1 HIGH VOLTAGE 3-PHASE BRUSHLESS DC MOTOR DRIVE Features • 500VDC RATING CIRCUIT TECHNOLOGY www.aeroflex.com • 40 AMP CONTINUOUS CURRENT UP TO 85°C General Description • PACKAGE SIZE 3.0" X 2.1" X 0.39" • 4 QUADRANT CONTROL • 6 STEP TRAPEZOIDAL DRIVE CAPABILITY

bipolar transistor td tr ts tf

Contextual Info: ACT5101-1 HIGH VOLTAGE 3-PHASE BRUSHLESS DC MOTOR DRIVE Features General Description • 500VDC RATING • 50 AMP DC RATING • PACKAGE SIZE 3.0" x 2.1" x 0.39" • 4 QUADRANT CONTROL • 6 STEP TRAPEZOIDAL DRIVE CAPABILITY • MILITARY PROCESSING AVAILABLE

LS 1316

Abstract: ACT5101-1
Contextual Info: ACT5101-1 HIGH VOLTAGE 3-PHASE BRUSHLESS DC MOTOR DRIVE Preliminary Features General Description • 500VDC RATING • 40 AMP DC RATING • PACKAGE SIZE 3.0" X 2.1" X 0.39" • 4 QUADRANT CONTROL • 6 STEP TRAPEZOIDAL DRIVE CAPABILITY • MILITARY PROCESSING AVAILABLE

B1120

Abstract: 1144C hybrid ic pwm dc motor 3918 MOSFET
Contextual Info: ACT5101-1 HIGH VOLTAGE 3-PHASE BRUSHLESS DC MOTOR DRIVE Features • • • • • • • 500 VDC RATING 40 AMP CONTINUOUS CURRENT UP TO 85°C PACKAGE SIZE 3.0" X 2.1" X 0.39" 4 QUADRANT CONTROL 6 STEP TRAPEZOIDAL DRIVE CAPABILITY MILITARY PROCESSING AVAILABLE

helicopter construction

Abstract: ACT5101-1
Contextual Info: ACT5101-1 HIGH VOLTAGE 3-PHASE BRUSHLESS DC MOTOR DRIVE Features • • • • • • • 500 VDC RATING 40 AMP CONTINUOUS CURRENT UP TO 85°C PACKAGE SIZE 3.0" X 2.1" X 0.39" 4 QUADRANT CONTROL 6 STEP TRAPEZOIDAL DRIVE CAPABILITY MILITARY PROCESSING AVAILABLE

IGBT loss calculate

Abstract: ACT5101-1 24LC23
Contextual Info: ACT5101-1 HIGH VOLTAGE 3-PHASE BRUSHLESS DC MOTOR DRIVE Features • • • • • • • 500 VDC RATING 40 AMP CONTINUOUS CURRENT UP TO 85°C PACKAGE SIZE 3.0" X 2.1" X 0.39" 4 QUADRANT CONTROL 6 STEP TRAPEZOIDAL DRIVE CAPABILITY MILITARY PROCESSING AVAILABLE

Contextual Info: ACT 5101 HIGH VOLTAGE 3-PHASE BRUSHLESS DC MOTOR DRIVE Features • • • • • • • • • 500 VDC RATING 40 AMP CONTINUOUS CURRENT UP TO 85 °C PACKAGE SIZE 3.0" X 2.1" X 0.39" 4 QUADRANT CONTROL 6 STEP TRAPEZOIDAL OR SINUSOIDAL DRIVE CAPABILITY

drive motor 40A with transistor P channel MOSFET

Contextual Info: —I 1-1- 1- 1-1- 1-1-1- 1-1- 1-1- 1-1-1- 1-1- 1-1-1-1— ACT5101-1 HIGH VOLTAGE 3-PHASE BRUSHLESS DC MOTOR DRIVE J I I I I I L J I I I I Features 500 VDC RATING 40 AMP CONTINUOUS CURRENT UP TO 85°C

f1n05 motorola

Contextual Info: MOTOROLA O rder this docum ent by M MDF1N05E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Surface Mount Products MMDF1N05E TMOS Dual N-Channel Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize M otorola’s TMOS process. These miniature surface

TRANSISTOR SMD MARKING CODE 702

Abstract: 702 TRANSISTOR smd 702 TRANSISTOR smd SOT23 TRANSISTOR SMD 702 N 702 y smd TRANSISTOR 702 N smd transistor SMD transistor marking 702 702 transistor smd code 702 L TRANSISTOR smd 70.2 TRANSISTOR smd
Contextual Info: Central S e m ic o n d u c to r C o rp . NEW PRODUCT ANNOUNCEMENT 2N7002 SMD Power MOSFET % SOT-23 Case DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process. This device can be utilized in the computer, telecommunications

Contextual Info: MOTOROLA Order this document by MMSF4P01HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M SF4P01 HD Medium Power Surface Mount Products Motorola Preferred Device TMOS P-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs

Contextual Info: MOTOROLA Order this document by MMDF4N01HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M D F 4N 01 H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 4.0 AMPERES

Contextual Info: MOTOROLA Order this document by MMDF2P01HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M D F2P01 HD Medium Power Surface Mount Products M otorola Preferred Device TMOS P-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs

ASEA motor

Contextual Info: MOTOROLA O rder this docum ent by M M SF3P03HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M S F 3P 03H D Medium Power Surface Mount Products Motorola Preferred Device TMOS P-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs

Contextual Info: MOTOROLA Order this document by MMSF4N01HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M S F 4N 01H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs

transistor bd 370

Contextual Info: MOTOROLA O rder this docum ent by M M FT3055V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TMOS V™ S O T -223 for Surface Mount M M FT3055V TM OS V N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about o n e -h a lf that of standard MOSFETs. This

Contextual Info: MOTOROLA O rder this docum ent by M TP1N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP1N60E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination

N6A07

Abstract: TRANSISTORS 132 GD ZXMHN6A07T8 two transistors sm9a
Contextual Info: ZXMHN6A07T8 60V N-CHANNEL MOSFET H-BRIDGE SUMMARY V BR DSS= 60V : RDS(on)= 0.3 ; ID= 1.6A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This

Contextual Info: MOTOROLA Order this document by MMDF3N04HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M D F3N 04H D Medium Power Surface Mount Products Motorola Preferred Device TM OS Dual N -C hannel Field E ffect Transistor MiniMOS™ devices are an advanced series of power MOSFETs