NY TRANSISTOR MAKING LIST Search Results

Contextual Info: High Power Transient Voltage Suppressor Modules Transient energy pulses are notorious among designers of all kinds of electronic hardware for their ability to cause failures in circuits of apparently conservative design. Logic circuits, for example, are subject to “glitches” and timing problems if even small transient voltages appear on

transistor 8522

Contextual Info: MOTOROLA O rder th is docum ent by BU323Z/D SEMICONDUCTOR TECHNICAL DATA BU323Z Advance Information NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, high-voltage power Darlington with a built-in active zener clamping circuit. This device is specifically designed for unclamped,

DO1608P-104

Abstract: inductor 100uH 3A NY TRANSISTOR MAKING LIST FMMT617 FMMT-617 NY TRANSISTOR MAKING D 843 Transistor NSPW500BS ZXSC300 ZHCS1000
Contextual Info: ZXSC300 SINGLE OR MULTI CELL LED DRIVER SOLUTION DESCRIPTION the switching transistor. The ZXSC300 is a single or multi cell LED driver designed for applications where step-up voltage conversion from very low input voltages is required. These applications mainly operate from single 1.5V or

transistor 80505

Contextual Info: S i GEC PLESSEY junei997 SEMI CO NDUC TOR S PRELIMINARY INFORMATION DS4715-1.3 ITS60F06 POWERLINE N-CHANNEL IGBT The ITS60F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

transistor 80505

Abstract: POWER BIPOLAR JUNCTION TRANSISTOR transistor 80505
Contextual Info: S i GEC PLESSEY junei997 SEMI CO NDUC TOR S PRELIMINARY INFORMATION DS4712-1.3 ITS13F06 POWERLINE N-CHANNEL IGBT The ITS13F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

MPM3003

Abstract: MC33035 ss43 hall RGP 30 H1 MOTOROLA brushless dc controller schematic Ss54 DIODE drive control damp motor Transistor sS41 MC33033 TJ3 diode bridge
Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA MPM3003 ICePAK Power M odule P-Channel and N-Channel Power M OSFET in a Three-Phase Bridge Configuration M otorola Preferred D evice The MPM3003 is a three-phase bridge power circuit packaged in the new power SIP called the ICePAK package. The upper legs of the bridge consist of three P-Channel

GP150MHB16S

Contextual Info: IV II^ T E L GP150MHB16S L_ Powerline N-Channel IGBT Module S E M IC O N D U C T O R . . . , dvance Inform ation Supersedes April 1998 version, DS4131 -6 .6 The GP150MHB16S is a dual switch 1600 volt, robust

Contextual Info: Si GEC P L ES SE Y SEPTEMBER 1997 ADVANCE INFORMATION S E M I C O N D U C T O R S DS4719-2.2 ITS35F12 POWERLINE N-CHANNEL IGBT The ITS35F12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

transistor bra 44

Contextual Info: S i GEC P L ES SE Y SEPTEM BERS ADVANCE INFORMATION S E M I C O N D U C T O R S DS4718-2.2 ITS25F12 POWERLINE N-CHANNEL IGBT The ITS25F12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

Contextual Info: S i GEC P L ES SE Y SEPTEMBER 1997 ADVANCE INFORMATION S E M I C O N D U C T O R S D S4711-2.3 ITS08F06 POWERLINE N-CHANNEL IGBT The ITS08F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

Contextual Info: S i GEC P L ES SE Y SEPTEMBER 1997 ADVANCE INFORMATION S E M I C O N D U C T O R S DS4682-3.3 ITS40F06 POWERLINE N-CHANNEL IGBT The ITS40F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

Contextual Info: S i GEC P L ES SE Y SEPTEMBER 1997 ADVANCE INFORMATION S E M I C O N D U C T O R S DS4717-2.2 ITS15F12 POWERLINE N-CHANNEL IGBT The ITS15F12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

DS4713-2

Contextual Info: 3Ë GEC P L E S S E Y SEPTEMBER 1997 SEMICONDUCTORS ADVANCE INFORMATION DS4713-2.2 ITS23F06 POWERLINE N-CHANNEL IGBT The ITS23F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

window comparator

Abstract: TLV431 design ideas AN61 AN62 AN63 TS16949 ZXRE060 ZXTN2038F AN58
Contextual Info: A Product Line of Diodes Incorporated AN62 Designing with Shunt Regulators - Other applications Peter Abiodun A. Bode, Snr. Applications Engineer, Diodes Zetex Ltd Introduction Shunt regulators or voltage references can be applied to other applications beyond the obvious

C410

Abstract: C420 FMMT617 ZHCS1000 ZX3CDBS1M832 ZXSC410 ZXSC410E6TA ZXSC420 ZXSC420E6TA
Contextual Info: ZXSC410 ZXSC420 VOLTAGE MODE BOOST CONVERTER DESCRIPTION The ZXSC410 is voltage mode boost converter in SOT23-6 package. Its excellent load and line regulation means that for the full supply range from lithium Ion cells, the output voltage will typically change by less than 1%. Using high efficiency

NY TRANSISTOR MAKING LIST

Abstract: ZXSC410 C410 C420 FMMT617 ZHCS1000 ZX3CDBS1M832 ZXSC410E6TA ZXSC420 ZXSC420E6TA
Contextual Info: ZXSC410 ZXSC420 VOLTAGE MODE BOOST CONVERTER DESCRIPTION The ZXSC410 is voltage mode boost converter in SOT23-6 package. Its excellent load and line regulation means that for the full supply range from lithium Ion cells, the output voltage will typically change by less than 1%. Using high efficiency

design of FM transmitter final year project

Abstract: led am voice transmitter and receiver circuit phototransistor ultraviolet diagram of IC 74112 IF-E96 tiny audio amplifier using LM386 schematic FM TRANSMITTER TWO WATTS Phototransistor IF-D92 research paper on optical fiber blue light PHOTOdetector paper
Contextual Info: TABLE OF CONTENTS Preface . . ii OBJECTIVE . 1 STARTING OUT .

TS16949

Abstract: ZXTN2040F ZXTP2041F ZXTP2041FTA ZXTP2041FTC
Contextual Info: ZXTP2041F SOT23 40 volt PNP silicon planar medium power transistor Summary V BR CEO > -40V Ic(cont) = -1A Vce(sat) < -500mV @ -1A Complementary type ZXTN2040F Description This transistor combines high gain, high current operation and low saturation voltage making it

LA 7376

Abstract: 729E HFA3046 16 PIN ic 810 PNP monolithic Transistor Arrays complementary npn-pnp power transistors hfa3128 TRANSISTOR 7812 1320j ba 9319
Contextual Info: HFA3046, HFA3096, HFA3127, HFA3128 S em iconductor October 1998 Data Sheet File Number 3076.10 Ultra High Frequency Transistor Arrays Features The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Harris Semiconductor’s complementary bipolar UHF-1

logic diagram of ic 74112

Abstract: phototransistor npn C1 4093 Quad 2 input Schmitt NAND Gate IC IF-E91A IF-E96 logic diagram of ic 74112 digital ic optical fiber free book IF-E96 application note TRANSISTOR REPLACEMENT GUIDE pnp phototransistor
Contextual Info: EDUCATIONAL COMMUNICATION KIT RADIANT ENERGY IN ACTION A Hands-On Introduction to Fiber Optics Communications • • For the Classroom For the Hobbyist INDUSTRIAL F IBER OPTICS * Copyright 2000 Industrial Fiber Optics, Inc. * * * All rights reserved. No part of this publication may be reproduced, stored

ge traction motor

Abstract: DS493
Contextual Info: @M ITEL GP800DHB12T Powerline N-Channel IGBT Module SEMICONDUCTOR A dvance Inform ation Supesedes August 1998, version DS4931-2.0 DS4931-3.5 February 1999 The GP800DHB12T is a dual switch 1200V, robust n channel enhan cem e nt m ode Insulated gate bipolar

thermistor ntc 10k

Abstract: ZXCS2000 ZXLD1321 ZXLD1321DCATC 744 777910 103KT1608 MSS7341-103ML NPIS64D100MTRF ZXTN25015DFH marking TADJ
Contextual Info: ZXLD1321 Boost mode DC-DC converter for LED driving with 1A output and current control Description The ZXLD1321 is an inductive DC-DC converter, with an internal switch, designed for driving single or multiple LEDs in series up to a total of 1A output current.

thermistor ntc 10k

Abstract: ZXCS2000 LED monitor circuit diagram NPIS64D100MTRF NY TRANSISTOR MAKING ZXLD1321 High Current Switching Applications transistor LED power INDUCTOR murata thermistor 103KT1608
Contextual Info: ZXLD1321 Boost mode DC-DC converter for LED driving with 1A output and current control Description The ZXLD1321 is an inductive DC-DC converter, with an internal switch, designed for driving single or multiple LEDs in series up to a total of 1A output current.

TS16949

Abstract: ZX5T955Z
Contextual Info: ZX5T955Z. 140V PNP Low saturation medium power transistor in SOT89 Summary BVCEO = -140V : RSAT = 85m⍀; IC = -3A Description Packaged in the SOT89 outline this new 5th generation low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC