NXP SMD TRANSISTOR MARKING CODE S1 Search Results

MOSFET TRANSISTOR SMD MARKING CODE 11

Abstract: NXP SMD TRANSISTOR MARKING CODE s1
Contextual Info: DF N1 10B -6 PMDXB600UNE 20 V, dual N-channel Trench MOSFET 16 September 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 10B -6 PMDXB950UPE 20 V, dual P-channel Trench MOSFET 10 September 2013 Product data sheet 1. General description Dual P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0B -6 NX7002BKXB 60 V, dual N-channel Trench MOSFET 10 December 2014 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench

NXP SMD TRANSISTOR MARKING CODE s1

Contextual Info: DF N2 020 -6 PMDPB760EN 100 V, dual N-channel Trench MOSFET 29 May 2013 Objective data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using

TRANSISTOR SMD MARKING CODE 1v

Abstract: NXP SMD TRANSISTOR MARKING CODE s1
Contextual Info: PMDPB30XN 20 V, dual N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using

smd diode marking 2U

Abstract: smd diode marking codes 2U smd diode code marking 2U marking 2U 28 diode DIODE smd marking 2U diode SMD marking code 2u 2U marking code diode smd smd diode marking 2U 40 marking 2U diode smd
Contextual Info: PMDPB95XNE 30 V dual N-channel Trench MOSFET 26 September 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using

NXP SMD TRANSISTOR MARKING CODE s1

Contextual Info: PMDPB38UNE 20 V dual N-channel Trench MOSFET 26 September 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using

NXP SMD TRANSISTOR MARKING CODE s1

Contextual Info: 020 -6 PMDPB56XN DF N2 30 V, dual N-channel Trench MOSFET Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using

DFN2020-6

Contextual Info: 020 -6 PMDPB55XP DF N2 20 V, dual P-channel Trench MOSFET Rev. 3 — 4 June 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using

NXP SMD TRANSISTOR MARKING CODE s1

Contextual Info: PMDPB55XP 20 V, dual P-channel Trench MOSFET Rev. 2 — 2 May 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using

g1 TRANSISTOR SMD MARKING CODE

Abstract: PMDPB55XP
Contextual Info: PMDPB55XP 20 V, dual P-channel Trench MOSFET Rev. 1 — 9 March 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench

SOT1118

Abstract: PMDPB70XP NXP SMD TRANSISTOR MARKING CODE s1
Contextual Info: PMDPB70XP 30 V, dual P-channel Trench MOSFET Rev. 1 — 9 March 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench

PMDPB70EN

Contextual Info: PMDPB70EN 30 V, dual N-channel Trench MOSFET Rev. 1 — 25 April 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using

Contextual Info: NX3020NAKS 30 V, 180 mA dual N-channel Trench MOSFET 11 November 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

TRANSISTOR SMD MARKING CODE 1P

Abstract: PMDPB28UN MOSFET TRANSISTOR SMD MARKING CODE NA
Contextual Info: PMDPB28UN 20 V, dual N-channel Trench MOSFET Rev. 1 — 26 April 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using

MOSFET TRANSISTOR SMD MARKING A1

Abstract: P-channel Trench MOSFET SOT1118
Contextual Info: PMDPB65UP 20 V, 3.5 A dual P-channel Trench MOSFET Rev. 2 — 8 March 2011 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using

marking code 1L

Abstract: NXP MARKING 1l
Contextual Info: 020 -6 PMDPB42UN DF N2 20 V, dual N-channel Trench MOSFET Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using

702 TRANSISTOR smd

Abstract: TRANSISTOR SMD MARKING CODE 702 702 TRANSISTOR smd SOT23 TRANSISTOR SMD 702 N smd transistor marking B5 702 N smd transistor TRANSISTOR SMD MARKING CODE LF 70.2 TRANSISTOR smd 702 k TRANSISTOR smd 702 transistor smd code
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSR12 PNP switching transistor Product specification 1999 Jul 23 Philips Semiconductors Product specification PNP switching transistor BSR12 FEATURES • Low current max. 100 mA handbook, halfpage

NXP SMD TRANSISTOR MARKING CODE s1

Abstract: DIODE smd marking CODE NZ bss138ps MOSFET TRANSISTOR SMD MARKING CODE A1 NXP SMD mosfet MARKING CODE 771-BSS138PS115
Contextual Info: BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

MOSFET TRANSISTOR SMD MARKING CODE A1

Abstract: g1 TRANSISTOR SMD MARKING CODE DIODE smd marking CODE NZ NXP SMD TRANSISTOR MARKING CODE s1 BSS138PS NXP SMD mosfet MARKING CODE transistor SMD MARKING CODE nz MOSFET TRANSISTOR SMD MARKING CODE 11 smd code marking Nz smd transistor marking A1
Contextual Info: BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: DF N1 10B -6 PMCXB900UE 20 V, complementary N/P-channel Trench MOSFET 7 October 2013 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic

Contextual Info: GTL2002 2-bit bidirectional low voltage translator Rev. 8 — 19 August 2013 Product data sheet 1. General description The Gunning Transceiver Logic - Transceiver Voltage Clamps GTL-TVC provide high-speed voltage translation with low ON-state resistance and minimal propagation

Contextual Info: SO T6 6 6 NX3020NAKV 30 V, 200 mA dual N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET