NXP SMD MOSFET MARKING CODE Search Results
NXP SMD MOSFET MARKING CODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| ICL7667MJA/883B | Rochester Electronics LLC | ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA) |
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| 5446/BEA | Rochester Electronics LLC | 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) |
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| 54LS190/BEA | Rochester Electronics LLC | 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) |
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| 2910/BQA | Rochester Electronics LLC | 2910 - Microprogram Controller - Dual marked (7801701QA) |
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| MQ80C186-12/BYA | Rochester Electronics LLC | 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) |
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NXP SMD MOSFET MARKING CODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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MOSFET TRANSISTOR SMD MARKING CODE 11
Abstract: MOSFET TRANSISTOR SMD MARKING CODE NA NXP SMD mosfet MARKING CODE MOSFET TRANSISTOR SMD MARKING CODE 7 MOSFET TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE QR DFN2020MD-6 sot1220 PMPB15XN
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pmpb15xndfn2020md-6ot1220mosfet transistor smd marking code 11+6 | |
MOSFET TRANSISTOR SMD MARKING CODE A1
Abstract: MOSFET TRANSISTOR SMD MARKING CODE 11
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pmpb20undfn2020md-6ot1220mosfet transistor smd marking code a1+1 | |
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Contextual Info: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
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pmxb75upedfn1010d-3ot1215 | |
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Contextual Info: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
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pmxb75upedfn1010d-3ot1215 | |
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Contextual Info: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
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pmxb65upedfn1010d-3ot1215 | |
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Contextual Info: SO T8 83 B PMZB950UPE 20 V, P-channel Trench MOSFET 28 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench |
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pmzb950upedfn1006b-3ot883b | |
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Contextual Info: DF N1 01 0D -3 PMXB56EN 30 V, N-channel Trench MOSFET 30 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
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pmxb56endfn1010d-3ot1215 | |
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Contextual Info: SO T8 83 B PMZB600UNE 20 V, N-channel Trench MOSFET 21 July 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench |
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pmzb600unedfn1006b-3ot883b | |
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Contextual Info: DF N1 01 0B -6 NX7002BKXB 60 V, dual N-channel Trench MOSFET 10 December 2014 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench |
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nx7002bkxbdfn1010b-6ot1216 | |
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Contextual Info: SO T8 83 PMZ370UNE 30 V, N-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench |
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pmz370unedfn1006-3ot883 | |
PMPB40SNA
Abstract: transistor smd 1E
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pmpb40snadfn2020md-6ot1220aec-q101+1 | |
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Contextual Info: SO T8 83 PMZ950UPE 20 V, P-channel Trench MOSFET 8 May 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench |
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pmz950upedfn1006-3ot883 | |
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Contextual Info: SO T8 83 PMZ350UPE 20 V, P-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench |
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pmz350upedfn1006-3ot883 | |
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Contextual Info: DF N 20 20 MD -6 NX2020P1 30 V, single P-channel Trench MOSFET 22 January 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using |
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nx2020p1dfn2020md-6ot1220 | |
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Contextual Info: SO T8 83 PMZ600UNE 20 V, N-channel Trench MOSFET 26 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench |
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pmz600unedfn1006-3ot883 | |
PMPB27EP
Abstract: MARKING CODE 1V TRANSISTOR SMD MARKING CODE 1v max10029
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pmpb27epdfn2020md-6ot1220marking code 1v+2 | |
marking code 1L
Abstract: TRANSISTOR SMD MARKING CODE 1l
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pmpb16xndfn2020md-6ot1220marking code 1l+1 | |
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Contextual Info: PMPB15XP 12 V, single P-channel Trench MOSFET 19 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using |
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pmpb15xpdfn2020md-6ot1220 | |
marking code 1sContextual Info: PMPB33XP 20 V, single P-channel Trench MOSFET 5 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using |
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pmpb33xpdfn2020md-6ot1220marking code 1s | |
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Contextual Info: SO T8 83 PMZ950UPE 20 V, P-channel Trench MOSFET 10 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench |
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pmz950upedfn1006-3ot883 | |
marking code 1f
Abstract: NXP SMD mosfet MARKING CODE
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pmpb12undfn2020md-6ot1220marking code 1f+1 | |
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Contextual Info: DF N 20 20 MD -6 NX2020N2 30 V, N-channel Trench MOSFET 20 January 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using |
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nx2020n2dfn2020md-6ot1220 | |
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Contextual Info: SO T8 83 PMZ290UNE 20 V, N-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench |
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pmz290unedfn1006-3ot883 | |
TRANSISTOR SMD MARKING CODE 1P
Abstract: smd transistor marking 1p smd TRANSISTOR code marking 1P
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pmpb33xndfn2020md-6ot1220transistor smd marking code 1p+2 | |