NXP SMD MOSFET MARKING CODE Search Results
NXP SMD MOSFET MARKING CODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| ICL7667MJA/883B |
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ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA) |
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| 5446/BEA |
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5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) |
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| 54LS190/BEA |
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54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) |
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| MG80C186-10/BZA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |
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| ICM7555MTV/883 |
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ICM7555MTV/883 - Dual marked (5962-8950303GA) |
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NXP SMD MOSFET MARKING CODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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MOSFET TRANSISTOR SMD MARKING CODE 11
Abstract: MOSFET TRANSISTOR SMD MARKING CODE NA NXP SMD mosfet MARKING CODE MOSFET TRANSISTOR SMD MARKING CODE 7 MOSFET TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE QR DFN2020MD-6 sot1220 PMPB15XN
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PMPB15XN DFN2020MD-6 OT1220) MOSFET TRANSISTOR SMD MARKING CODE 11 MOSFET TRANSISTOR SMD MARKING CODE NA NXP SMD mosfet MARKING CODE MOSFET TRANSISTOR SMD MARKING CODE 7 MOSFET TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE QR DFN2020MD-6 sot1220 PMPB15XN | |
MOSFET TRANSISTOR SMD MARKING CODE A1
Abstract: MOSFET TRANSISTOR SMD MARKING CODE 11
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PMPB20UN DFN2020MD-6 OT1220) MOSFET TRANSISTOR SMD MARKING CODE A1 MOSFET TRANSISTOR SMD MARKING CODE 11 | |
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Contextual Info: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
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PMXB75UPE DFN1010D-3 OT1215) | |
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Contextual Info: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
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PMXB75UPE DFN1010D-3 OT1215) | |
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Contextual Info: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
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PMXB65UPE DFN1010D-3 OT1215) | |
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Contextual Info: SO T8 83 B PMZB950UPE 20 V, P-channel Trench MOSFET 28 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench |
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PMZB950UPE DFN1006B-3 OT883B) | |
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Contextual Info: DF N1 01 0D -3 PMXB56EN 30 V, N-channel Trench MOSFET 30 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
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PMXB56EN DFN1010D-3 OT1215) | |
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Contextual Info: SO T8 83 B PMZB600UNE 20 V, N-channel Trench MOSFET 21 July 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench |
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PMZB600UNE DFN1006B-3 OT883B) | |
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Contextual Info: DF N1 01 0B -6 NX7002BKXB 60 V, dual N-channel Trench MOSFET 10 December 2014 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench |
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NX7002BKXB DFN1010B-6 OT1216) | |
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Contextual Info: SO T8 83 PMZ370UNE 30 V, N-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench |
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PMZ370UNE DFN1006-3 OT883) | |
PMPB40SNA
Abstract: transistor smd 1E
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PMPB40SNA DFN2020MD-6 OT1220) AEC-Q101 PMPB40SNA transistor smd 1E | |
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Contextual Info: SO T8 83 PMZ950UPE 20 V, P-channel Trench MOSFET 8 May 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench |
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PMZ950UPE DFN1006-3 OT883) | |
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Contextual Info: SO T8 83 PMZ350UPE 20 V, P-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench |
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PMZ350UPE DFN1006-3 OT883) | |
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Contextual Info: DF N 20 20 MD -6 NX2020P1 30 V, single P-channel Trench MOSFET 22 January 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using |
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NX2020P1 DFN2020MD-6 OT1220) | |
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Contextual Info: SO T8 83 PMZ600UNE 20 V, N-channel Trench MOSFET 26 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench |
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PMZ600UNE DFN1006-3 OT883) | |
PMPB27EP
Abstract: MARKING CODE 1V TRANSISTOR SMD MARKING CODE 1v max10029
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PMPB27EP DFN2020MD-6 OT1220) PMPB27EP MARKING CODE 1V TRANSISTOR SMD MARKING CODE 1v max10029 | |
marking code 1L
Abstract: TRANSISTOR SMD MARKING CODE 1l
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PMPB16XN DFN2020MD-6 OT1220) marking code 1L TRANSISTOR SMD MARKING CODE 1l | |
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Contextual Info: PMPB15XP 12 V, single P-channel Trench MOSFET 19 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using |
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PMPB15XP DFN2020MD-6 OT1220) | |
marking code 1sContextual Info: PMPB33XP 20 V, single P-channel Trench MOSFET 5 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using |
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PMPB33XP DFN2020MD-6 OT1220) marking code 1s | |
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Contextual Info: SO T8 83 PMZ950UPE 20 V, P-channel Trench MOSFET 10 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench |
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PMZ950UPE DFN1006-3 OT883) | |
marking code 1f
Abstract: NXP SMD mosfet MARKING CODE
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PMPB12UN DFN2020MD-6 OT1220) marking code 1f NXP SMD mosfet MARKING CODE | |
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Contextual Info: DF N 20 20 MD -6 NX2020N2 30 V, N-channel Trench MOSFET 20 January 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using |
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NX2020N2 DFN2020MD-6 OT1220) | |
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Contextual Info: SO T8 83 PMZ290UNE 20 V, N-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench |
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PMZ290UNE DFN1006-3 OT883) | |
TRANSISTOR SMD MARKING CODE 1P
Abstract: smd transistor marking 1p smd TRANSISTOR code marking 1P
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PMPB33XN DFN2020MD-6 OT1220) TRANSISTOR SMD MARKING CODE 1P smd transistor marking 1p smd TRANSISTOR code marking 1P | |