NXP SMD MOSFET MARKING CODE Search Results
NXP SMD MOSFET MARKING CODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| ICL7667MJA/883B |
|
ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA) |
|
||
| 5446/BEA |
|
5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) |
|
||
| 54LS190/BEA |
|
54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) |
|
||
| MG80C186-10/BZA |
|
80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |
|
||
| ICM7555MTV/883 |
|
ICM7555MTV/883 - Dual marked (5962-8950303GA) |
|
NXP SMD MOSFET MARKING CODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
MOSFET TRANSISTOR SMD MARKING CODE 11
Abstract: MOSFET TRANSISTOR SMD MARKING CODE NA NXP SMD mosfet MARKING CODE MOSFET TRANSISTOR SMD MARKING CODE 7 MOSFET TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE QR DFN2020MD-6 sot1220 PMPB15XN
|
Original |
PMPB15XN DFN2020MD-6 OT1220) MOSFET TRANSISTOR SMD MARKING CODE 11 MOSFET TRANSISTOR SMD MARKING CODE NA NXP SMD mosfet MARKING CODE MOSFET TRANSISTOR SMD MARKING CODE 7 MOSFET TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE QR DFN2020MD-6 sot1220 PMPB15XN | |
MOSFET TRANSISTOR SMD MARKING CODE A1
Abstract: MOSFET TRANSISTOR SMD MARKING CODE 11
|
Original |
PMPB20UN DFN2020MD-6 OT1220) MOSFET TRANSISTOR SMD MARKING CODE A1 MOSFET TRANSISTOR SMD MARKING CODE 11 | |
|
Contextual Info: DF N1 01 0D -3 PMXB360ENEA 80 V, N-channel Trench MOSFET 16 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
Original |
PMXB360ENEA DFN1010D-3 OT1215) AEC-Q101 | |
|
Contextual Info: DF N1 01 0D -3 PMXB56EN 30 V, N-channel Trench MOSFET 25 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
Original |
PMXB56EN DFN1010D-3 OT1215) | |
|
Contextual Info: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
Original |
PMXB75UPE DFN1010D-3 OT1215) | |
NXP date code marking
Abstract: a/NXP date code marking
|
Original |
PMXB65UPE DFN1010D-3 OT1215) NXP date code marking a/NXP date code marking | |
|
Contextual Info: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
Original |
PMXB65UPE DFN1010D-3 OT1215) | |
|
Contextual Info: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
Original |
PMXB75UPE DFN1010D-3 OT1215) | |
MOSFET TRANSISTOR SMD MARKING CODE 11
Abstract: NXP SMD TRANSISTOR MARKING CODE s1
|
Original |
PMDXB600UNE DFN1010B-6 OT1216) MOSFET TRANSISTOR SMD MARKING CODE 11 NXP SMD TRANSISTOR MARKING CODE s1 | |
|
Contextual Info: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 4 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
Original |
PMXB75UPE DFN1010D-3 OT1215) | |
NXP date code markingContextual Info: DF N1 01 0D -3 PMXB43UNE 20 V, N-channel Trench MOSFET 19 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
Original |
PMXB43UNE DFN1010D-3 OT1215) NXP date code marking | |
|
Contextual Info: DF N1 10B -6 PMDXB950UPE 20 V, dual P-channel Trench MOSFET 10 September 2013 Product data sheet 1. General description Dual P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench |
Original |
PMDXB950UPE DFN1010B-6 OT1216) | |
|
Contextual Info: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
Original |
PMXB65UPE DFN1010D-3 OT1215) | |
|
Contextual Info: DF N1 01 0D -3 PMXB120EPE 30 V, P-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
Original |
PMXB120EPE DFN1010D-3 OT1215) | |
|
|
|||
|
Contextual Info: DF N1 01 0D -3 PMXB350UPE 20 V, P-channel Trench MOSFET 24 January 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
Original |
PMXB350UPE DFN1010D-3 OT1215) | |
|
Contextual Info: DF N1 01 0D -3 PMXB56EN 30 V, N-channel Trench MOSFET 30 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
Original |
PMXB56EN DFN1010D-3 OT1215) | |
|
Contextual Info: DF N1 01 0D -3 PMXB65ENE 30 V, N-channel Trench MOSFET 13 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
Original |
PMXB65ENE DFN1010D-3 OT1215) | |
|
Contextual Info: DF N1 01 0D -3 PMXB40UNE 12 V, N-channel Trench MOSFET 27 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
Original |
PMXB40UNE DFN1010D-3 OT1215) | |
|
Contextual Info: DF N1 01 0D -3 PMXB40UNE 12 V, N-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
Original |
PMXB40UNE DFN1010D-3 OT1215) | |
|
Contextual Info: SO T8 83 B PMZB600UNE 20 V, N-channel Trench MOSFET 21 July 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench |
Original |
PMZB600UNE DFN1006B-3 OT883B) | |
|
Contextual Info: DF N1 01 0D -3 PMXB350UPE 20 V, P-channel Trench MOSFET 19 September 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
Original |
PMXB350UPE DFN1010D-3 OT1215) | |
|
Contextual Info: DF N1 01 0D -3 PMXB65ENE 30 V, N-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
Original |
PMXB65ENE DFN1010D-3 OT1215) | |
|
Contextual Info: DF N 20 20 MD -6 PMPB40SNA 60 V N-channel Trench MOSFET 2 July 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using |
Original |
PMPB40SNA DFN2020MD-6 OT1220) AEC-Q101 | |
|
Contextual Info: DF N1 01 0B -6 NX7002BKXB 60 V, dual N-channel Trench MOSFET 10 December 2014 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench |
Original |
NX7002BKXB DFN1010B-6 OT1216) | |