NXP MARKING SG Search Results

BGT24MTR11

Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Contextual Info: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

smd code marking ft sot23

Abstract: marking code my SMD Transistor npn marking code SG transistors SMD MARKING CODE sg smd code marking sot23 nxp MARKING SG marking code NA sot23 MARKING CODE SMD IC MARKING sg SOT23 MARKING SOT23 .DG
Contextual Info: 2PD602AQL; 2PD602ARL; 2PD602ASL 50 V, 500 mA NPN general-purpose transistors Rev. 01 — 27 October 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package.

NXP SD SMD ZENER DIODE MARKING CODE

Abstract: Zener diode smd marking U4 NXP SMD ZENER DIODE MARKING CODE diode zener smd sg 64 diode sy 170/10 smd diode marking sG zener diode SMD marking code tf BZX84J-C6V8 BZX84J-B24 Zener diode smd marking code C24
Contextual Info: BZX84J series Single Zener diodes Rev. 01 — 1 March 2007 Product data sheet 1. Product profile 1.1 General description General-purpose Zener diodes in a SOD323F SC-90 very small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features • Non-repetitive peak reverse power

NXP SD SMD ZENER DIODE MARKING CODE

Abstract: C5V1 Zener diode smd marking U4 zener diode SMD marking code tf SMD diode sg 46 diode zener smd sg 64 marking code D3 SC-88 NXP SMD ZENER DIODE MARKING CODE marking code sc smd diode marking code u9
Contextual Info: SO D3 23F BZX84J series Single Zener diodes Rev. 2 — 1 August 2011 Product data sheet 1. Product profile 1.1 General description General-purpose Zener diodes in a SOD323F SC-90 very small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

BF1202WR

Contextual Info: DISCRETE SEMICONDUCTORS DAT BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs Product specification Supersedes data of 2000 Mar 29 2010 Sep 16 NXP Semiconductors Product specification N-channel dual-gate PoLo MOS-FETs FEATURES BF1202; BF1202R; BF1202WR

"MARKING CODE LE"

Abstract: BF1202WR BF1202 BF1202R dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs Product specification Supersedes data of 2000 Mar 29 2010 Sep 16 NXP Semiconductors Product specification N-channel dual-gate PoLo MOS-FETs FEATURES BF1202; BF1202R; BF1202WR

MOSFET 7121

Abstract: 9935 mosfet
Contextual Info: BF1217WR N-channel dual gate MOSFET Rev. 1 — 3 August 2010 Product data sheet 1. Product profile 1.1 General description Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive

Contextual Info: BF1216 Dual N-channel dual gate MOSFET Rev. 01 — 29 April 2010 Product data sheet 1. Product profile 1.1 General description The BF1216 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization

bf1216

Abstract: Dual Gate MOSFET graphs dual gate mosfet in vhf amplifier SC-88 M5t transistor M5W
Contextual Info: BF1216 Dual N-channel dual gate MOSFET Rev. 01 — 29 April 2010 Product data sheet 1. Product profile 1.1 General description The BF1216 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization

Contextual Info: BF1217WR N-channel dual gate MOSFET Rev. 2 — 20 June 2011 Product data sheet 1. Product profile 1.1 General description Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive

BF1217WR

Abstract: mosfet cross reference
Contextual Info: BF1217WR N-channel dual gate MOSFET Rev. 2 — 20 June 2011 Product data sheet 1. Product profile 1.1 General description Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive

br 8764

Abstract: marking 822 sot363 6710 mosfet sp 9753 BF1214 sc 6700 N-CHANNEL dual gate ultra low noise vhf AMPLIFIER
Contextual Info: BF1214 Dual N-channel dual gate MOSFET Rev. 01 — 30 October 2007 Product data sheet 1. Product profile 1.1 General description The BF1214 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable

BF1101WR

Abstract: "MARKING CODE NC" MGS303 BF1101 BF1101R MGS302 dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1999 Feb 01 1999 May 14 NXP Semiconductors Product specification BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs FEATURES

br 8764

Abstract: 13-AMPLIFIER BF1210
Contextual Info: BF1210 Dual N-channel dual gate MOSFET Rev. 01 — 25 October 2006 Product data sheet 1. Product profile 1.1 General description The BF1210 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable

Contextual Info: DISCRETE SEMICONDUCTORS DAT BF1211; BF1211R; BF1211WR N-channel dual-gate MOS-FETs Product specification 2003 Dec 16 NXP Semiconductors Product specification BF1211; BF1211R; BF1211WR N-channel dual-gate MOS-FETs FEATURES PINNING • Short channel transistor with high forward transfer

BF1201WR

Contextual Info: DISCRETE SEMICONDUCTORS DAT BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs Product specification Supersedes data of 1999 Dec 01 2000 Mar 29 NXP Semiconductors Product specification BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs FEATURES

BF1201

Abstract: BF1201R BF1201WR 7555 ID c2328 dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs Product specification Supersedes data of 1999 Dec 01 2000 Mar 29 NXP Semiconductors Product specification BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs

Contextual Info: BF1207 Dual N-channel dual gate MOSFET Rev. 2 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The source and substrate are interconnected. Internal bias circuits enable Direct Current

hg1b

Abstract: marking 822 sot363
Contextual Info: BF1207 Dual N-channel dual gate MOSFET Rev. 2 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The source and substrate are interconnected. Internal bias circuits enable Direct Current

dual-gate

Abstract: BF1212R datasheet BF1212 BF1212R BF1212WR
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs Product specification 2003 Nov 14 NXP Semiconductors Product specification BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs FEATURES PINNING • Short channel transistor with high forward transfer

DUAL-GATE

Contextual Info: DISCRETE SEMICONDUCTORS DAT BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs Product specification 2003 Nov 14 NXP Semiconductors Product specification BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs FEATURES PINNING • Short channel transistor with high forward transfer

Contextual Info: SO T6 66 BF1206F Dual N-channel dual gate MOSFET Rev. 2 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable Direct Current

Contextual Info: BF904A; BF904AR; BF904AWR N-channel dual gate MOS-FETs Rev. 04 — 13 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact