NXP MARKING 11 Search Results

PDTA123YMB

Abstract: PDTC123YMB
Contextual Info: 83B PDTC123YMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 k , R2 = 10 k Rev. 1 — 11 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

PMEG4002EL

Contextual Info: PMEG4002EL 40 V, 0.2 A low VF MEGA Schottky barrier rectifier Rev. 02 — 11 March 2009 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD882 leadless ultra small

PDTA143ZMB

Abstract: PDTC143ZMB
Contextual Info: 83B PDTC143ZMB SO T8 NPN resistor-equipped transistor; R1 = 4.7 k , R2 = 47 k Rev. 1 — 11 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.

PMBD914

Abstract: smd PMBD914
Contextual Info: PMBD914 Single high-speed switching diode Rev. 06 — 11 February 2009 Product data sheet 1. Product profile 1.1 General description Single high-speed switching diode, fabricated in planar technology, and encapsulated in a small Surface-Mounted Device SMD plastic package.

Contextual Info: 2N7002CK 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 — 11 September 2009 Product data sheet 1. Product profile 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

BAP51-03

Abstract: DIODE marking S4 06 SMD MARKING CODE s4 SC-76
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BAP51-03 General purpose PIN diode Product specification Supersedes data of 1999 Aug 16 2004 Feb 11 NXP Semiconductors Product specification General purpose PIN diode BAP51-03 FEATURES PINNING • Low diode capacitance PIN

marking code A09 SMD Transistor

Contextual Info: PBSS3540E 40 V, 500 mA PNP low VCEsat BISS transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. NPN complement: PBSS2540E.

Contextual Info: PBSS4160V 60 V, 1 A NPN low VCEsat BISS transistor Rev. 03 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description Low VCEsat (BISS) NPN transistor in a SOT666 plastic package. PNP complement: PBSS5160V. 1.2 Features ̈ ̈ ̈ ̈

MARKING CODE BE SC76

Abstract: marking code D3 DIODE marking S4 06 SMD MARKING CODE s4 BAP65-03 SC-76
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BAP65-03 Silicon PIN diode Product specification Supersedes data of 2001 May 11 2004 Feb 11 NXP Semiconductors Product specification Silicon PIN diode BAP65-03 FEATURES PINNING • High voltage, current controlled PIN DESCRIPTION

PESD5V0L2UU

Abstract: PESD6V0L2UU NXP Marking H2
Contextual Info: PESD5V0L2UU; PESD6V0L2UU Low capacitance unidirectional ESD protection diodes Rev. 01 — 11 March 2009 Product data sheet 1. Product profile 1.1 General description Low capacitance unidirectional double ElectroStatic Discharge ESD protection diodes in a very small Surface-Mounted Device (SMD) plastic package designed to protect up to

v8140z

Abstract: PBHV8140Z SC-73 MARKING CODE SMD IC V8140
Contextual Info: PBHV8140Z 500 V, 1 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

Contextual Info: PBHV9540Z 500 V, 0.5 A PNP high-voltage low VCEsat BISS transistor Rev. 01 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

PBHV9215Z,115

Contextual Info: PBHV9215Z 150 V, 2 A PNP high-voltage low VCEsat BISS transistor Rev. 01 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

Contextual Info: PMEG6020ETR High-temperature 60 V, 2 A Schottky barrier rectifier 11 October 2012 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat

208S8

Contextual Info: DP AK BTA208S-800F 3Q Hi-Com Triac 11 August 2014 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT428 DPAK surface mountable plastic package. This "series F" triac balances the requirements of commutation performance and gate sensitivity and is intended for interfacing with low

A1015 smd type

Contextual Info: PBSS306PX 100 V, 3.7 A PNP low VCEsat BISS transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.

FET marking codes

Abstract: PMF3800SN transistor sc-70 marking codes
Contextual Info: PMF3800SN N-channel TrenchMOS standard level FET Rev. 03 — 11 November 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

Contextual Info: TO -92 BTA2008-1000D 3Q Hi-Com Triac 11 June 2014 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT54 TO-92 plastic package. This "series D" triac balances the requirements of commutation performance

Contextual Info: PBSS4160U 60 V, 1 A NPN low VCEsat BISS transistor Rev. 03 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT323 (SC-70) Surface Mounted Device (SMD) plastic package.

"marking code D2"

Abstract: DIODE marking S4 06 SMD MARKING CODE s4 BAP63-03 SC-76
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BAP63-03 Silicon PIN diode Product specification Supersedes data of 2001 May 18 2004 Feb 11 NXP Semiconductors Product specification Silicon PIN diode BAP63-03 FEATURES PINNING • High speed switching for RF signals PIN

Contextual Info: 74LVC1GU04 Inverter Rev. 11 — 2 July 2012 Product data sheet 1. General description The 74LVC1GU04 provides the inverting single state unbuffered function. The input can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device in a mixed 3.3 V and 5 V environment.

TRANSISTOR SMD MARKING CODE 108

Abstract: PBHV9215Z V9215Z SC-73 transistor SMD MARKING CODE MARKING CODE SMD IC transistor smd code marking 102 transistor smd code marking 101 TRANSISTOR SMD MARKING CODE 72
Contextual Info: PBHV9215Z 150 V, 2 A PNP high-voltage low VCEsat BISS transistor Rev. 01 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

SmD TRANSISTOR a74

Contextual Info: PBSS306PX 100 V, 3.7 A PNP low VCEsat BISS transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.

Contextual Info: TO -2 20A B PSMN7R8-100PSE N-channel 100 V 7.8 mΩ standard level MOSFET with improved SOA in TO220 package 11 August 2014 Product data sheet 1. General description Standard level N-channel MOSFET with improved SOA in a TO220 package. Part of NXP's "NextPower Live" portfolio, the PSMN7R8-100PSE is robust enough to withstand