NXP MARKING 11 Search Results

BAP65LX

Contextual Info: BAP65LX Silicon PIN diode Rev. 01 — 11 December 2007 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882T leadless ultra small plastic SMD package. 1.2 Features • ■ ■ ■ ■ High voltage, current controlled Low diode capacitance

BAP63LX

Abstract: SMD MARKING CODE M 4 Diode
Contextual Info: BAP63LX Silicon PIN diode Rev. 01 — 11 December 2007 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882T leadless ultra small plastic SMD package. 1.2 Features • ■ ■ ■ ■ High speed switching for RF signals

PDTC124XMB

Contextual Info: 83B PDTA124XMB SO T8 PNP resistor-equipped transistor; R1 = 22 k , R2 = 47 k Rev. 1 — 11 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

PDTA123YMB

Abstract: PDTC123YMB
Contextual Info: 83B PDTC123YMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 k , R2 = 10 k Rev. 1 — 11 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

PMEG4002EL

Contextual Info: PMEG4002EL 40 V, 0.2 A low VF MEGA Schottky barrier rectifier Rev. 02 — 11 March 2009 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD882 leadless ultra small

Contextual Info: 83B PDTC144EMB SO T8 NPN resistor-equipped transistor; R1 = 47 k , R2 = 47 k Rev. 1 — 11 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.

PDTA143ZMB

Abstract: PDTC143ZMB
Contextual Info: 83B PDTC143ZMB SO T8 NPN resistor-equipped transistor; R1 = 4.7 k , R2 = 47 k Rev. 1 — 11 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.

Contextual Info: PMEG4030ER 3 A low VF MEGA Schottky barrier rectifier Rev. 01 — 11 August 2009 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat

smd diode marking Ja

Contextual Info: PMEG6020ETP High-temperature 60 V, 2 A Schottky barrier rectifier 11 October 2012 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead

PMBD914

Abstract: smd PMBD914
Contextual Info: PMBD914 Single high-speed switching diode Rev. 06 — 11 February 2009 Product data sheet 1. Product profile 1.1 General description Single high-speed switching diode, fabricated in planar technology, and encapsulated in a small Surface-Mounted Device SMD plastic package.

PDTC143XE

Abstract: PDTA143 PDTA143XE PDTA143X
Contextual Info: PDTC143X series NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 10 k Rev. 11 — 9 December 2011 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET family in Surface-Mounted Device (SMD) plastic packages.

Contextual Info: 2N7002CK 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 — 11 September 2009 Product data sheet 1. Product profile 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

BAP51-03

Abstract: DIODE marking S4 06 SMD MARKING CODE s4 SC-76
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BAP51-03 General purpose PIN diode Product specification Supersedes data of 1999 Aug 16 2004 Feb 11 NXP Semiconductors Product specification General purpose PIN diode BAP51-03 FEATURES PINNING • Low diode capacitance PIN

marking code A09 SMD Transistor

Contextual Info: PBSS3540E 40 V, 500 mA PNP low VCEsat BISS transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. NPN complement: PBSS2540E.

Contextual Info: PBSS4160V 60 V, 1 A NPN low VCEsat BISS transistor Rev. 03 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description Low VCEsat (BISS) NPN transistor in a SOT666 plastic package. PNP complement: PBSS5160V. 1.2 Features ̈ ̈ ̈ ̈

Contextual Info: PBSS8110D 100 V, 1 A NPN low VCEsat BISS transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a plastic SOT457 (SC-74) package. 1.2 Features ̈ ̈ ̈ ̈ SOT457 package Low collector-emitter saturation voltage VCEsat

MARKING CODE BE SC76

Abstract: marking code D3 DIODE marking S4 06 SMD MARKING CODE s4 BAP65-03 SC-76
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BAP65-03 Silicon PIN diode Product specification Supersedes data of 2001 May 11 2004 Feb 11 NXP Semiconductors Product specification Silicon PIN diode BAP65-03 FEATURES PINNING • High voltage, current controlled PIN DESCRIPTION

PESD5V0L2UU

Abstract: PESD6V0L2UU NXP Marking H2
Contextual Info: PESD5V0L2UU; PESD6V0L2UU Low capacitance unidirectional ESD protection diodes Rev. 01 — 11 March 2009 Product data sheet 1. Product profile 1.1 General description Low capacitance unidirectional double ElectroStatic Discharge ESD protection diodes in a very small Surface-Mounted Device (SMD) plastic package designed to protect up to

Contextual Info: PBHV8140Z 500 V, 1 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

v8140z

Abstract: PBHV8140Z SC-73 MARKING CODE SMD IC V8140
Contextual Info: PBHV8140Z 500 V, 1 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

Contextual Info: PBHV9540Z 500 V, 0.5 A PNP high-voltage low VCEsat BISS transistor Rev. 01 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

PBHV9215Z,115

Contextual Info: PBHV9215Z 150 V, 2 A PNP high-voltage low VCEsat BISS transistor Rev. 01 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

Contextual Info: PMEG6020ETR High-temperature 60 V, 2 A Schottky barrier rectifier 11 October 2012 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat

Transistor AC 51

Contextual Info: PBSS306NZ 100 V, 5.1 A NPN low VCEsat BISS transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.