NXP MARKING 11 Search Results

NXP BAV199 date code

Abstract: BAV199 NXP marking code diode smd marking jy smd code marking WV BAV199
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV199 Low-leakage double diode Product data sheet Supersedes data of 1999 May 11 2001 Oct 12 NXP Semiconductors Product data sheet Low-leakage double diode FEATURES BAV199 MARKING • Plastic SMD package

BAV199

Contextual Info: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D088 BAV199 Low-leakage double diode Product data sheet Supersedes data of 1999 May 11 2001 Oct 12 NXP Semiconductors Product data sheet Low-leakage double diode FEATURES BAV199 PINNING MARKING • Plastic SMD package

Contextual Info: PESD12VS1ULD Unidirectional ESD protection diode Rev. 1 — 11 May 2011 Product data sheet 1. Product profile 1.1 General description Unidirectional ElectroStatic Discharge ESD protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in

Contextual Info: PESD15VS1ULD Unidirectional ESD protection diode Rev. 1 — 11 May 2011 Product data sheet 1. Product profile 1.1 General description Unidirectional ElectroStatic Discharge ESD protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in

Contextual Info: PESD12VS1ULD Unidirectional ESD protection diode Rev. 1 — 11 May 2011 Product data sheet 1. Product profile 1.1 General description Unidirectional ElectroStatic Discharge ESD protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in

Contextual Info: PESD15VS1ULD Unidirectional ESD protection diode Rev. 1 — 11 May 2011 Product data sheet 1. Product profile 1.1 General description Unidirectional ElectroStatic Discharge ESD protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in

Contextual Info: D8 82D PMEG2005BELD SO 20 V, 0.5 A low VF MEGA Schottky barrier rectifier Rev. 1 — 11 January 2012 Preliminary data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small

BAP65LX

Contextual Info: BAP65LX Silicon PIN diode Rev. 01 — 11 December 2007 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882T leadless ultra small plastic SMD package. 1.2 Features • ■ ■ ■ ■ High voltage, current controlled Low diode capacitance

BAP63LX

Abstract: SMD MARKING CODE M 4 Diode
Contextual Info: BAP63LX Silicon PIN diode Rev. 01 — 11 December 2007 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882T leadless ultra small plastic SMD package. 1.2 Features • ■ ■ ■ ■ High speed switching for RF signals

PDTC124XMB

Contextual Info: 83B PDTA124XMB SO T8 PNP resistor-equipped transistor; R1 = 22 k , R2 = 47 k Rev. 1 — 11 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

PDTA123YMB

Abstract: PDTC123YMB
Contextual Info: 83B PDTC123YMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 k , R2 = 10 k Rev. 1 — 11 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

PDTC124

Abstract: PDTC124XMB
Contextual Info: 83B PDTA124XMB SO T8 PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ Rev. 1 — 11 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

Contextual Info: DF N1 60 8D -2 PMEG4020EPK 40 V, 2 A low VF MEGA Schottky barrier rectifier 11 February 2014 Product data sheet 1. General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small

PMEG4002EL

Contextual Info: PMEG4002EL 40 V, 0.2 A low VF MEGA Schottky barrier rectifier Rev. 02 — 11 March 2009 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD882 leadless ultra small

PDTC123YMB

Abstract: PDTA123YMB
Contextual Info: 83B PDTC123YMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 1 — 11 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

PDTA143Z

Abstract: PDTA143ZMB PDTC143ZMB PDTA143
Contextual Info: 83B PDTC143ZMB SO T8 NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ Rev. 1 — 11 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.

PDTA143ZMB

Abstract: PDTC143ZMB
Contextual Info: 83B PDTC143ZMB SO T8 NPN resistor-equipped transistor; R1 = 4.7 k , R2 = 47 k Rev. 1 — 11 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.

Contextual Info: 83B PDTC144EMB SO T8 NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ Rev. 1 — 11 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.

IEC61643-321

Contextual Info: PESD5V0F1USF Extremely low capacitance unidirectional ESD protection diode Rev. 1 — 11 December 2012 Product data sheet 1. Product profile 1.1 General description Extremely low capacitance unidirectional ElectroStatic Discharge ESD protection diode in a DSN0603-2 (SOD962) leadless ultra small Surface-Mounted Device (SMD) package

Contextual Info: SO D1 23W PTVSxS1UTR series High-temperature 400 W Transient Voltage Suppressor Rev. 1 — 11 October 2011 Product data sheet 1. Product profile 1.1 General description 400 W unidirectional Transient Voltage Suppressor TVS in a SOD123W small and flat lead low-profile Surface-Mounted Device (SMD) plastic package, designed for transient

smd transistor ja

Contextual Info: 83B PMZB420UN SO T8 30 V, single N-channel Trench MOSFET Rev. 1 — 11 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: 83B PMZB290UN SO T8 20 V, single N-channel Trench MOSFET Rev. 1 — 11 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: 83B 2N7002BKMB SO T8 60 V, single N-channel Trench MOSFET Rev. 1 — 11 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

NX3008NBKMB

Contextual Info: 83B NX3008NBKMB SO T8 30 V, single N-channel Trench MOSFET Rev. 1 — 11 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench